Abstract: An electrophoretic display and method for driving panel using the same are provided. The electrophoretic display includes a display panel and a driving circuit. The display panel includes a plurality of column data lines and a plurality of row scan lines. The driving circuit provides a plurality of data driving signals to the column data lines, and provides a plurality of scan signals to row scan lines. Each of the scan signals has a plurality of scan enable periods, and each of the scan enable periods includes a plurality of scan interval periods. Each of the scan signals is floating or grounding during the scan interval periods. Each of the data driving signals includes a plurality of data driving periods, and each of the data driving periods includes a plurality of driving interval period. Each of the data driving signals is floating or grounding during the driving interval period.

Abstract: A catalyst layer material and a membrane electrode assembly (MEA) having same are provided. The catalyst layer material used for a fuel cell has a catalyst support and a catalyst distributed on the catalyst support. The catalyst support has TiWMXNYOZ, wherein Ti is titanium; M is one metal element selected from a group consisting of group IB metals, group IIA metals, group IIB metals, group VB metals, group VIB metals, group VIIB metals and group VIIIB metals; N is an non-metal element selected from a group consisting of nitrogen, phosphorus, and sulfur; O is oxygen; 0<W?1; 0<X?0.5; 0<Y?0.2; 1.5?Z?2.0. By applying a non-carbon catalyst support doped with metal cations and anions to the membrane electrode assembly, stability and performance of the fuel cell can be effectively enhanced.

Abstract: A terminal for an ion implantation system is provided, wherein the terminal has a terminal housing for supporting an ion source configured to form an ion beam. A gas box within the terminal housing has a hydrogen generator configured to produce hydrogen gas for the ion source. The gas box is electrically insulated from the terminal housing, and is further electrically coupled to the ion source. The ion source and gas box are electrically isolated from the terminal housing by a plurality of electrical insulators. A plurality of insulating standoffs electrically isolate the terminal housing from an earth ground. A terminal power supply electrically biases the terminal housing to a terminal potential with respect to the earth ground. An ion source power supply electrically biases the ion source to an ion source potential with respect to the terminal potential. Electrically conductive tubing electrically couples the gas box and ion source.

Abstract: An arc chamber liner has first and second surfaces and a hole having a first diameter. A liner lip having a second diameter extends upwardly from the second surface toward the first surface and surrounds the hole. An electrode has a shaft with a third diameter and a head with a fourth diameter. The third diameter is less than the first diameter and passes through the body and hole and is electrically isolated from the liner by an annular gap. The head has a third surface having an electrode lip extending downwardly from the third surface toward the second surface. The electrode lip has a fifth diameter between the second and fourth diameters. A spacing between the liner and electrode lips defines a labyrinth seal to generally prevent contaminants from entering the annular gap. The shaft has an annular groove configured to accept a boron nitride seal.

Abstract: Processes and systems for carbon ion implantation include utilizing phosphine as a co-gas with a carbon oxide gas in an ion source chamber. In one or more embodiments, carbon implantation with the phosphine co-gas is in combination with the lanthanated tungsten alloy ion source components, which advantageously results in minimal oxidation of the cathode and cathode shield, among other components within the ion source chamber.

Abstract: Processes and systems for carbon ion implantation include utilizing phosphorous trifluoride (PF3) as a co-gas with carbon oxide gas, and in some embodiments, in combination with the lanthanated tungsten alloy ion source components advantageously results in minimal oxidation of the cathode and cathode shield. Moreover, acceptable levels of carbon deposits on the arc chamber internal components have been observed as well as marked reductions in the halogen cycle, i.e., WFx formation.

Abstract: A driving method of an electrophoretic display having at least one display particle is provided. The driving method includes the following steps. A first voltage difference is applied to a data line in a first period, in which the data line corresponds to one of the display particles. At least one particle restore period is inserted in the first period, and a second voltage difference is applied to the data line in the particle restore periods, in which the second voltage difference is different from the first voltage difference. With this method disclosed here, the maxima brightness, maxima darkness, contrast ratio, color saturation, bistability, and image updating time can be largely improved.

Abstract: An ion source assembly and method is provided for improving ion implantation performance. The ion source assembly has an ion source chamber and a source gas supply provides a molecular carbon source gas such as toluene to the ion source chamber. A source gas flow controller controls a flow of the molecular carbon source gas to the ion source chamber. An excitation source excites the molecular carbon source gas, forming carbon ions and atomic carbon. An extraction electrode extracts the carbon ions from the ion source chamber, forming an ion beam. A hydrogen peroxide co-gas supply provides a predetermined concentration of hydrogen peroxide co-gas to the ion source chamber, and a hydrogen peroxide co-gas flow controller controls a flow of the hydrogen peroxide gas to the ion source chamber. The hydrogen peroxide co-gas decomposes within the ion source chamber and reacts with the atomic carbon from the molecular carbon source gas in the ion source chamber, forming hydrocarbons within the ion source chamber.

Abstract: Disclosed herein is a method of producing acellular cartilage grafts. The method includes steps of, subjecting a cartilage matrix derived from an animal to alkaline, disinfection and decelluarization treatments. The thus produced cartilage graft is devoid of any cellular matters, while maintaining the porosity and integrity of collagen fibers therein, thus is suitable as a xenograft for host cells to grown thereon. Also disclosed herein is a method for treating osteochondral disease of a subject, in which the present acellular cartilage graft is applied to a lesion site of the subject.

Abstract: An ion implantation system is provided having one or more conductive components comprised of one or more of lanthanated tungsten and a refractory metal alloyed with a predetermined percentage of a rare earth metal. The conductive component may be a component of an ion source, such as one or more of a cathode, cathode shield, a repeller, a liner, an aperture plate, an arc chamber body, and a strike plate. The aperture plate may be associated with one or more of an extraction aperture, a suppression aperture and a ground aperture.

Abstract: An ion implantation system is provided having an ion source configured to form an ion beam from aluminum iodide. A beamline assembly selectively transports the ion beam to an end station configured to accept the ion beam for implantation of aluminum ions into a workpiece. An arc chamber forms a plasma from the aluminum iodide, where arc current from a power supply is configured to dissociate aluminum ions from the aluminum iodide. One or more extraction electrodes extract the ion beam from the arc chamber. A hydrogen co-gas source further introduces a hydrogen co-gas to react residual aluminum iodide and iodide, where the reacted residual aluminum iodide and iodide is evacuated from the system.

Abstract: This invention is a functionalized diamond crystal with high dispersibility in high ionic strength solution and/or with specific targeting ability, which comprise a diamond crystal and a fatty acid layer. The fatty acid layer works a surfactant and provides a specific targeting feature for the diamond crystal. The feature of the surfactant makes the diamond crystal being easily dispersed in biological surrounding (e.g., phosphate saline buffer) and the feature of specific targeting ability provides the diamond crystal with specific recognizing specific targets. This invention allows researchers to use diamond crystal as a marker for specific labelling.

Abstract: The present disclosure provides a method of cleaning a semiconductor wafer during a process of fabricating a semiconductor device. The method includes loading a semiconductor wafer into a wafer handling system. The method includes removing contaminant particles from an edge region of the wafer from the back side, wherein alignment marks are located in the edge region. The method includes collecting the removed contaminant particles and discarding the collected contaminant particles out of the wafer handling system. The disclosure also provides an apparatus for fabricating a semiconductor device. The apparatus includes a wafer cleaning device that is operable to clean a predetermined region of the wafer on the back surface thereof. The predetermined region of the wafer at least partially overlaps with one or more alignment marks.

Abstract: A method of producing an acellular cornea includes steps of subjecting a cornea of an animal to a decellularization process, and has not the step of treating the cornea with a protease, a chelating agent, a detergent, a glycerol, or a combination thereof. When a native cornea is processed by the method, the native structure and conformation of the native cornea are preserved while immunogenic matters are reduced to a level that the thus produced cornea may serve as a three-dimensional scaffold for host cells to grow thereon after transplantation.

Abstract: A data writing method for a solid state storage device is provided. The solid state storage device includes a flash memory with plural blocks. The data writing method includes the following steps. Firstly, a flush command is received. Then, host write data in a buffer are stored into an open block of the flash memory according to a program order. Then, a garbage collection is performed to acquire collected write data from a close block of the flash memory and temporarily store the collected write data into the buffer. Then, the host write data and the collected write data in the buffer are stored into the open block of the flash memory according to the program order.

Abstract: A ratchet wrench includes a head having a first room for receiving a driving member, and a second room for receiving a pawl. Two recesses are defined in the inner periphery of the second room. A tip portion is located between the two recesses. The tip portion passes through the two respective centers of the first and second rooms. The pawl is controlled by a bolt and a lever. A spring and a contact member are received in a positioning hole in the rear side of the pawl. The contact member is biased by the spring and engaged with one of the two recesses to push the pawl to be engaged with the driving member. The contact member is restricted between one of the two recesses and the positioning hole so as to bear a large torque.

Abstract: A method includes operation below. At least one portion of layout patterns coupled between a first terminal and a second terminal of a circuit is extracted from a layout design for the circuit. The at least one portion is compared with at least one coding portion, in which the at least one coding portion specifies layout constraints for either the first terminal or the second terminal of the circuit. When the at least one portion meets the at least one coding portion, fabrication of the circuit is initiated according to the layout design.

Abstract: An ion implantation system for improving performance and extending lifetime of an ion source is disclosed. A fluorine-containing dopant gas source is introduced into the ion chamber along with one or more co-gases. The one or more co-gases can include hydrogen or krypton. The co-gases mitigate the effects caused by free fluorine ions in the ion source chamber which lead to ion source failure.

Abstract: Processes and systems for carbon ion implantation include utilizing phosphine as a co-gas with a carbon oxide gas in an ion source chamber. In one or more embodiments, carbon implantation with the phosphine co-gas is in combination with the lanthanated tungsten alloy ion source components, which advantageously results in minimal oxidation of the cathode and cathode shield, among other components within the ion source chamber.

Abstract: Processes and systems for carbon ion implantation include utilizing phosphorous trifluoride (PF3) as a co-gas with carbon oxide gas, and in some embodiments, in combination with the lanthanated tungsten alloy ion source components advantageously results in minimal oxidation of the cathode and cathode shield. Moreover, acceptable levels of carbon deposits on the arc chamber internal components have been observed as well as marked reductions in the halogen cycle, i.e., WFx formation.