Abstract: A method of processing a semiconductor device including following operation is provided. A substrate is provided. The substrate is then processed with a treating solution, in which the treating solution includes liquid carbon dioxide and an additive. The treating solution is then displaced by a supercritical fluid carbon dioxide. The substrate is then dried by transforming the supercritical fluid carbon dioxide to gaseous carbon dioxide.

Abstract: A method for manufacturing a capacitor includes: providing a substrate and a multilayer structure; forming a recess in the multilayer structure; forming a first electrode layer on a surface of the recess; performing a selective etching treatment to remove the first and second stack material layers; performing a selective vapor phase etching treatment to the first electrode layer to form a smaller thickness of the first electrode layer; and forming a dielectric layer and a second electrode layer in which the dielectric layer is between the first and second electrode layer.

Abstract: A method of manufacturing a semiconductor structure includes the following operations. A substrate embedded with a shallow trench isolation is received. A first dielectric layer is formed on the substrate. An etching process is performed to form a hole in the first dielectric layer and form a pit in the substrate, wherein an upper surface of the shallow trench isolation is exposed from the hole, and the pit is adjacent to the shallow trench isolation. A second dielectric layer is formed on the first dielectric layer and the shallow trench isolation and in the pit. The second dielectric layer is treated with a plasma to convert a first portion of the second dielectric layer substantially on the first dielectric layer and the shallow trench isolation to a plasma-treated layer. The plasma-treated layer is removed to remain a second portion of the second dielectric layer in the pit.