Abstract: A planarization process in which an organic film prevents oxide dishing during the chemical mechanical polishing step. In the planarization process an organic film having high CMP selectivity to silicon dioxide is spun over silicon dioxide. A patterned mask is then placed over the organic film and the exposed portions of the organic film are etched away. The remaining portions of the organic film prevent oxide dishing during chemical mechanical polishing because the high CMP selectivity of the organic film to silicon dioxide stops the etching before oxide dishing occurs. The organic film may then be oxygen ashed off the planarized surface if so desired.

Abstract: Substrate bombardment during HDP deposition of carbon-doped silicon oxide film results in filling the gaps between metal lines with carbon-doped low k dielectric material. This leads to the placement of low k dielectric between the narrow metal lines while the films over the metal lines have higher dielectric constant due to removal of carbon from these films during ion bombardment. Films over the metal lines have properties similar to silicon dioxide and are ready for sequential integration processes.

Abstract: A chemical vapor deposition (CVD) process uses a precursor gas, such as with a siloxane or alkylsilane, and a carbon-dioxide-containing gas, such as CO2 with O2 or CO2 with CxH(2x+1)OH where 1≦x≦5, to deposit a dielectric layer with no photoresist “footing”, a low dielectric constant, and high degrees of adhesion and hardness. Because nitrogen is not used in the deposition process (the carbon-dioxide-containing gas replaces nitrogen-containing gases in conventional processes), amines do not build into the deposited layer, thereby preventing photoresist “footing”.

Abstract: A cathode-anode apparatus is constructed whereby the wafer under test, connected to a conducting wire, forms the cathode terminal and a copper plate, also connected to a conducting wire, forms the anode terminal. The wafer under test and the copper plate are immersed in a CuSO4—H2O solution. A positive dc voltage is applied to the copper plate; the dc current ionizes the CuSO4 solution and forms Cu2+ ions. These Cu2+ ions will diffuse to the wafer surface. Most of the Cu2+ ions will accumulate in and around defective contacts or vias in the semiconductor surface making these defective contacts or vias readily identifiable.

Abstract: A cathode-anode apparatus is constructed whereby the wafer under test, connected to a conducting wire, forms the cathode terminal and a copper plate, also connected to a conducting wire, forms the anode terminal. The wafer under test and the copper plate are immersed in a CuSO4—H2O solution. A positive dc voltage is applied to the copper plate; the dc current ionizes the CuSO4 solution and forms Cu2+ ions. These Cu2+ ions will diffuse to the wafer surface. Most of the Cu2+ ions will accumulate in and around defective contacts or vias in the semiconductor surface making these defective contacts or vias readily identifiable.

Abstract: A device for styling hair includes a pair of plates pivotally coupled together at a middle shaft. A pair of combs are pivotally coupled to the lower portions of the plates for allowing the combs to be rotated downward of the plates and to be rotated inward between the plates. The combs each includes a number of outward extended comb teeth for styling the hair. The plates each includes a pair of sleeves disposed in the lower portion. The combs each includes two pins rotatably engaged in the sleeves for pivotally coupling the combs to the plates.

Abstract: A method for removing a metal-fluoropolymer residue from an integrated circuit structure within an integrated circuit. There is first provided an integrated circuit having formed therein a metal-fluoropolymer residue. The metal-fluoropolymer residue is formed from a first plasma etch method employing a fluorocarbon containing etchant gas composition within the presence of a conductor metal layer within the integrated circuit. The metal-fluoropolymer residue is then exposed to a second plasma etch method employing a chlorine containing etchant gas composition to form from the metal-fluoropolymer residue a chlorine containing plasma treated metal-fluoropolymer residue. Finally, the chlorine containing plasma treated metal-fluoropolymer residue is removed from the integrated circuit through a stripping method sequentially employing an aqueous acid solution followed by an organic solvent.