Patents by Inventor Jen-Yu Wang
Jen-Yu Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240136251Abstract: A semiconductor device includes a package and a cooling cover. The package includes a first die having an active surface and a rear surface opposite to the active surface. The rear surface has a cooling region and a peripheral region enclosing the cooling region. The first die includes micro-trenches located in the cooling region of the rear surface. The cooling cover is stacked on the first die. The cooling cover includes a fluid inlet port and a fluid outlet port located over the cooling region and communicated with the micro-trenches.Type: ApplicationFiled: January 4, 2024Publication date: April 25, 2024Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chung-Jung Wu, Chih-Hang Tung, Tung-Liang Shao, Sheng-Tsung Hsiao, Jen-Yu Wang
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Patent number: 11955154Abstract: A sense amplifier circuit includes a sense amplifier, a switch and a temperature compensation circuit. The temperature compensation circuit provides a control signal having a positive temperature coefficient, based on which the switch provides reference impedance for temperature compensation. The sense amplifier includes a first input end coupled to a target bit and a second input end coupled to the switch. The sense amplifier outputs a sense amplifier signal based on the reference impedance and the impedance of the target bit.Type: GrantFiled: May 16, 2022Date of Patent: April 9, 2024Assignee: UNITED MICROELECTRONICS CORP.Inventors: Cheng-Tung Huang, Jen-Yu Wang, Po-Chun Yang, Yi-Ting Wu, Yung-Ching Hsieh, Jian-Jhong Chen, Chia-Wei Lee
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Patent number: 11955405Abstract: A semiconductor package includes a package substrate; semiconductor devices disposed on the package substrate; a package ring disposed on a perimeter of the package substrate surrounding the semiconductor devices; a cover including silicon bonded to the package ring and covering the semiconductor devices; and a thermal interface structure (TIS) thermally connecting the semiconductor devices to the cover.Type: GrantFiled: January 17, 2022Date of Patent: April 9, 2024Assignee: Taiwan Semiconductor Manufacturing Company LimitedInventors: Jen Yu Wang, Chung-Jung Wu, Sheng-Tsung Hsiao, Tung-Liang Shao, Chih-Hang Tung, Chen-Hua Yu
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Patent number: 11948798Abstract: A method for manufacturing an integrated circuit includes patterning a plurality of photomask layers over a substrate, partially backfilling the patterned plurality of photomask layers with a first material using atomic layer deposition, completely backfilling the patterned plurality of photomask layers with a second material using atomic layer deposition, removing the plurality of photomask layers to form a masking structure comprising at least one of the first and second materials, and transferring a pattern formed by the masking structure to the substrate and removing the masking structure. The first material includes a silicon dioxide, silicon carbide, or carbon material, and the second material includes a metal oxide or metal nitride material.Type: GrantFiled: July 16, 2021Date of Patent: April 2, 2024Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Ching-Yu Chang, Jung-Hau Shiu, Jen Hung Wang, Tze-Liang Lee
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Patent number: 11948949Abstract: In some embodiments, the present disclosure relates to a device having a semiconductor substrate including a frontside and a backside. On the frontside of the semiconductor substrate are a first source/drain region and a second source/drain region. A gate electrode is arranged on the frontside of the semiconductor substrate and includes a horizontal portion, a first vertical portion, and a second vertical portion. The horizontal portion is arranged over the frontside of the semiconductor substrate and between the first and second source/drain regions. The first vertical portion extends from the frontside towards the backside of the semiconductor substrate and contacts the horizontal portion of the gate electrode structure. The second vertical portion extends from the frontside towards the backside of the semiconductor substrate, contacts the horizontal portion of the gate electrode structure, and is separated from the first vertical portion by a channel region of the substrate.Type: GrantFiled: July 15, 2022Date of Patent: April 2, 2024Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chun-Yuan Chen, Ching-Chun Wang, Hsiao-Hui Tseng, Jen-Cheng Liu, Jhy-Jyi Sze, Shyh-Fann Ting, Wei Chuang Wu, Yen-Ting Chiang, Chia Ching Liao, Yen-Yu Chen
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Patent number: 11942130Abstract: A bottom-pinned spin-orbit torque magnetic random access memory (SOT-MRAM) is provided in the present invention, including a substrate, a bottom electrode layer on the substrate, a magnetic tunnel junction (MTJ) on the bottom electrode layer, a spin-orbit torque (SOT) layer on the MTJ, a capping layer on the SOT layer, and an injection layer on the capping layer, wherein the injection layer is divided into individual first part and second part, and the first part and the second part are connected respectively with two ends of the capping layer.Type: GrantFiled: March 23, 2022Date of Patent: March 26, 2024Assignee: UNITED MICROELECTRONICS CORP.Inventors: Jian-Jhong Chen, Yi-Ting Wu, Jen-Yu Wang, Cheng-Tung Huang, Po-Chun Yang, Yung-Ching Hsieh
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Patent number: 11901263Abstract: A semiconductor device includes a package and a cooling cover. The package includes a first die having an active surface and a rear surface opposite to the active surface. The rear surface has a cooling region and a peripheral region enclosing the cooling region. The first die includes micro-trenches located in the cooling region of the rear surface. The cooling cover is stacked on the first die. The cooling cover includes a fluid inlet port and a fluid outlet port located over the cooling region and communicated with the micro-trenches.Type: GrantFiled: March 15, 2023Date of Patent: February 13, 2024Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chung-Jung Wu, Chih-Hang Tung, Tung-Liang Shao, Sheng-Tsung Hsiao, Jen-Yu Wang
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Patent number: 11903325Abstract: A memory device includes a substrate; an active area extending along a first direction on the substrate; a gate line traversing the active area and extending along a second direction that is not parallel to the first direction; a source doped region in the active area and on a first side of the gate line; a main source line extending along the first direction; a source line extension coupled to the main source line and extending along the second direction; a drain doped region in the active area and on a second side of the gate line that is opposite to the first side; and a data storage element electrically coupled to the drain doped region. The main source line is electrically connected to the source doped region via the source line extension.Type: GrantFiled: May 2, 2022Date of Patent: February 13, 2024Assignee: UNITED MICROELECTRONICS CORP.Inventors: Yi-Ting Wu, Yan-Jou Chen, Cheng-Tung Huang, Jen-Yu Wang, Po-Chun Yang, Yung-Ching Hsieh, Jian-Jhong Chen, Bo-Chang Li
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Publication number: 20230420337Abstract: Cooling covers including trapezoidal cooling chambers for cooling packaged semiconductor devices and methods of forming the same are disclosed. In an embodiment, a cooling cover for a semiconductor device includes an inlet; an outlet; and a cooling chamber in fluid communication with the inlet and the outlet, the cooling chamber having a trapezoidal shape in a cross-sectional view.Type: ApplicationFiled: June 27, 2022Publication date: December 28, 2023Inventors: Chung-Jung Wu, Sheng-Tsung Hsiao, Jen Yu Wang, Tung-Liang Shao, Chih-Hang Tung
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Publication number: 20230343379Abstract: A sense amplifier circuit includes a sense amplifier, a switch and a temperature compensation circuit. The temperature compensation circuit provides a control signal having a positive temperature coefficient, based on which the switch provides reference impedance for temperature compensation. The sense amplifier includes a first input end coupled to a target bit and a second input end coupled to the switch. The sense amplifier outputs a sense amplifier signal based on the reference impedance and the impedance of the target bit.Type: ApplicationFiled: May 16, 2022Publication date: October 26, 2023Applicant: UNITED MICROELECTRONICS CORP.Inventors: Cheng-Tung Huang, Jen-Yu Wang, Po-Chun Yang, Yi-Ting Wu, Yung-Ching Hsieh, Jian-Jhong Chen, Chia-Wei Lee
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Publication number: 20230282261Abstract: The present invention provides a spin-orbit torque magnetic random access memory (SOT-MRAM) circuit, including a read transistor pair with two read transistors in parallel, a write transistor pair with two write transistors in parallel, a SOT memory cell with a magnetic tunnel junction (MTJ) and a SOT layer, wherein one end of the MTJ is connected to the source of the read transistor pair and the other end of the MTJ is connected to the SOT layer, and one end of the SOT layer is connected to a source line and the other of the SOT layer is connected to the source of the write transistor pair, a read bit line is connected to the drain of the read transistor pair and a write bit line is connected to the drain of the read transistor.Type: ApplicationFiled: March 29, 2022Publication date: September 7, 2023Applicant: UNITED MICROELECTRONICS CORP.Inventors: Chun-Yen Tseng, Yu-Tse Kuo, Shu-Ru Wang, Jen-Yu Wang, Li-Ping Huang, Yi-Ting Wu, Jia-Rong Wu, Chun-Hsien Huang
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Publication number: 20230282260Abstract: A bottom-pinned spin-orbit torque magnetic random access memory (SOT-MRAM) is provided in the present invention, including a substrate, a bottom electrode layer on the substrate, a magnetic tunnel junction (MTJ) on the bottom electrode layer, a spin-orbit torque (SOT) layer on the MTJ, a capping layer on the SOT layer, and an injection layer on the capping layer, wherein the injection layer is divided into individual first part and second part, and the first part and the second part are connected respectively with two ends of the capping layer.Type: ApplicationFiled: March 23, 2022Publication date: September 7, 2023Applicant: UNITED MICROELECTRONICS CORP.Inventors: Jian-Jhong Chen, Yi-Ting Wu, Jen-Yu Wang, Cheng-Tung Huang, Po-Chun Yang, Yung-Ching Hsieh
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Publication number: 20230223318Abstract: A semiconductor device includes a package and a cooling cover. The package includes a first die having an active surface and a rear surface opposite to the active surface. The rear surface has a cooling region and a peripheral region enclosing the cooling region. The first die includes micro-trenches located in the cooling region of the rear surface. The cooling cover is stacked on the first die. The cooling cover includes a fluid inlet port and a fluid outlet port located over the cooling region and communicated with the micro-trenches.Type: ApplicationFiled: March 15, 2023Publication date: July 13, 2023Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chung-Jung Wu, Chih-Hang Tung, Tung-Liang Shao, Sheng-Tsung Hsiao, Jen-Yu Wang
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Patent number: 11699705Abstract: A semiconductor device includes a PMOS region and a NMOS region on a substrate, a first fin-shaped structure on the PMOS region, a first single diffusion break (SDB) structure in the first fin-shaped structure, a first gate structure on the first SDB structure, and a second gate structure on the first fin-shaped structure. Preferably, the first gate structure and the second gate structure are of different materials and the first gate structure disposed directly on top of the first SDB structure is a polysilicon gate while the second gate structure disposed on the first fin-shaped structure is a metal gate in the PMOS region.Type: GrantFiled: February 22, 2022Date of Patent: July 11, 2023Assignee: UNITED MICROELECTRONICS CORP.Inventors: Yen-Wei Tung, Jen-Yu Wang, Cheng-Tung Huang, Yan-Jou Chen
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Patent number: 11637103Abstract: A semiconductor device includes a PMOS region and a NMOS region on a substrate, a first fin-shaped structure on the PMOS region, a first single diffusion break (SDB) structure in the first fin-shaped structure, a first gate structure on the first SDB structure, and a second gate structure on the first fin-shaped structure. Preferably, the first gate structure and the second gate structure are of different materials and the first gate structure disposed directly on top of the first SDB structure is a polysilicon gate while the second gate structure disposed on the first fin-shaped structure is a metal gate in the PMOS region.Type: GrantFiled: October 4, 2021Date of Patent: April 25, 2023Assignee: UNITED MICROELECTRONICS CORP.Inventors: Yen-Wei Tung, Jen-Yu Wang, Cheng-Tung Huang, Yan-Jou Chen
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Patent number: 11631629Abstract: A semiconductor device includes a package and a cooling cover. The package includes a first die having an active surface and a rear surface opposite to the active surface. The rear surface has a cooling region and a peripheral region enclosing the cooling region. The first die includes micro-trenches located in the cooling region of the rear surface. The cooling cover is stacked on the first die. The cooling cover includes a fluid inlet port and a fluid outlet port located over the cooling region and communicated with the micro-trenches.Type: GrantFiled: April 28, 2022Date of Patent: April 18, 2023Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chung-Jung Wu, Chih-Hang Tung, Tung-Liang Shao, Sheng-Tsung Hsiao, Jen-Yu Wang
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Patent number: 11569147Abstract: A method of forming a semiconductor package is provided. The method includes forming a metallization stack over a semiconductor die. Polymer particles are mounted over the metallization stack. Each of the polymer particles is coated with a first bonding layer. A heat spreader lid is bonded with the semiconductor die by reflowing the first bonding layer. A composite thermal interface material (TIM) structure is formed between the heat spreader lid and the semiconductor die during the bonding. The composite TIM structure includes the first bonding layer and the polymer particles embedded in the first bonding layer.Type: GrantFiled: August 25, 2021Date of Patent: January 31, 2023Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Tung-Liang Shao, Jen-Yu Wang, Chung-Jung Wu, Chih-Hang Tung, Chen-Hua Yu
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Publication number: 20230007912Abstract: A semiconductor package includes a package substrate; semiconductor devices disposed on the package substrate; a package ring disposed on a perimeter of the package substrate surrounding the semiconductor devices; a cover including silicon bonded to the package ring and covering the semiconductor devices; and a thermal interface structure (TIS) thermally connecting the semiconductor devices to the cover.Type: ApplicationFiled: January 17, 2022Publication date: January 12, 2023Inventors: Jen Yu WANG, Chung-Jung WU, Sheng-Tsung HSIAO, Tung-Liang SHAO, Chih-Hang TUNG, Chen-Hua YU
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Publication number: 20220384523Abstract: A MRAM circuit structure is provided in the present invention, with the unit cell composed of three transistors in series and four MTJs, wherein the junction between first transistor and third transistor is first node, the junction between second transistor and third transistor is second node, and the other ends of first transistor and third transistor are connected to a common source line. First MTJ is connected to second MTJ in series to form a first MTJ pair that connecting to the first node, and third MTJ is connected to fourth MTJ in series to form a second MTJ pair that connecting to the second node.Type: ApplicationFiled: July 7, 2021Publication date: December 1, 2022Applicant: UNITED MICROELECTRONICS CORP.Inventors: Yi-Ting Wu, Cheng-Tung Huang, Jen-Yu Wang, Yung-Ching Hsieh, Po-Chun Yang, Jian-Jhong Chen, Bo-Chang Li
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Publication number: 20220310482Abstract: Semiconductor devices including lids having liquid-cooled channels and methods of forming the same are disclosed. In an embodiment, a semiconductor device includes a first integrated circuit die; a lid coupled to the first integrated circuit die, the lid including a plurality of channels in a surface of the lid opposite the first integrated circuit die; a cooling cover coupled to the lid opposite the first integrated circuit die; and a heat transfer unit coupled to the cooling cover through a pipe fitting, the heat transfer unit being configured to supply a liquid coolant to the plurality of channels through the cooling cover.Type: ApplicationFiled: June 15, 2022Publication date: September 29, 2022Inventors: Sheng-Tsung Hsiao, Jen Yu Wang, Chung-Jung Wu, Tung-Liang Shao, Chih-Hang Tung