Abstract: A semiconductor device includes a first and second semiconductor chip having a respective first surface and a second surface opposite to each other. The semiconductor device can include a second semiconductor chip having a third surface and a fourth surface opposite to each other. The third surface of the second semiconductor chip can face the second surface of the first semiconductor chip. A first portion of a dielectric filling material can be in contact with a first sidewall of the first semiconductor chip. A second portion of a dielectric filling material can be in contact with a second sidewall of the second semiconductor chip. The first and second portions of the dielectric filling material can have a width that decreases in a corresponding increasing depth toward the first surface of the first semiconductor chip.

Abstract: The semiconductor structure includes a die structure including: a substrate; a first dielectric disposed over the substrate; a first interconnect structure disposed within the first dielectric; a second dielectric disposed on the first dielectric; and a conductive pad surrounded by the second dielectric, a capping member surrounding the die structure; and an insulating member surrounding the capping member, wherein the capping member includes a first oxynitride layer in contact with the die structure or the insulating member.

Abstract: A method includes configuring a bonding tool based on a first semiconductor die and a second semiconductor die, wherein the bonding tool includes a platform and a first bonding head and a second bonding head connected to the platform; attaching the first semiconductor die to the first bonding head; moving the first semiconductor die toward a semiconductor wafer to bond the first semiconductor die to the semiconductor wafer; releasing the first semiconductor die from the first bonding head; configuring the platform to cause the second bonding head to move the second semiconductor die to the location over the semiconductor wafer while keeping the first bonding head on the platform; and moving the second semiconductor die by the second bonding head toward the semiconductor wafer to bond the second semiconductor die to the semiconductor wafer.

Abstract: A pick-and-place apparatus includes a first head part, a vacuum system and a second head part. The first head part includes a first portion with a first material, a second portion surrounding the first portion and with a second material. The second head part is disposed between the first head part and the vacuum system. The pick-and-place apparatus further includes a plurality of vacuum holes. The plurality of vacuum holes penetrate through the first head part and the second head part to couple to the vacuum system. A hardness of the first material is greater than a hardness of the second material, and a bottom surface of the first portion and a bottom surface of the second portion are aligned with each other.

Abstract: A semiconductor device includes a substrate having a first surface and a second surface opposite the first surface, and a through-silicon via structure extending through the substrate. The through-silicon via structure includes a first through-silicon via containing a first conductivity type material and a second through-silicon via containing a second conductivity type material opposite the first conductivity type material. The semiconductor device also includes a first conductive layer on the first surface of the substrate and electrically coupled to a first end of the first through-silicon via and a first end of the second through-silicon via. The semiconductor device also includes a second conductive layer on the second surface and having a first portion coupled to a second end of the first through-silicon via and a second portion coupled to a second end of the second through-silicon via.

Abstract: A pick-and-place tool includes a bond base and an attaching head. The attaching head is connected to the bond base and configured to attract a chip by a suction force. The attaching head has an attaching surface that is convex toward the chip, the attaching head has a plurality of suction holes penetrating the attaching surface, and the attaching head attracts the chip using the suction force via the suction holes.

Abstract: A method of fabricating a semiconductor package includes: providing a first die group including a plurality of first dies stacked parallel to a front surface of the first die group; providing a second die group including a plurality of second dies parallel to a front surface of the second die group; providing a base substrate structure comprising a substrate characterized by a lattice crystalline plane extending in a third direction; bonding the first die group on the base substrate structure, wherein the first edge extends in a first direction, and the first direction and the third direction define a first angle; and bonding the second die group on the base substrate structure, wherein the second edge extends in a second direction, and the second direction and the third direction define a second angle, and at least one of the first angle and the second angle is not zero.

Abstract: A die stack includes: a first die including a first semiconductor substrate; a second die including a second semiconductor substrate; a bonding dielectric structure including a bonding polymer and that bonds the first die and the second die; a bonding interconnect structure that extends through the bonding dielectric structure to bond and electrically connect the first die and the second die; and a bonding dummy pattern that extends through the bonding dielectric structure to bond the first die and the second die. The bonding dummy pattern is electrically conductive and is electrically floated.

Abstract: A method includes: receiving an auxiliary routing request from a manufacturing execution system (MES) apparatus of a first site by an inter-site backup management apparatus; selecting an auxiliary route to a second site based on the auxiliary routing request and a statistical model by the inter-site backup management apparatus; including the auxiliary route in a route associated with a wafer lot by the MES apparatus; and performing a semiconductor processing operation on a wafer of the wafer lot according to the route.

Abstract: A semiconductor package includes a base substrate structure having a top surface that includes conductive regions disposed in a dielectric region. The conductive regions are coupled to an interconnect structure. The semiconductor package also includes a first die bonded sideways on the base substrate structure. A side surface at an edge of the first die is bonded to the top surface of the base substrate structure. A front surface of the first die is perpendicular to the top surface of the base substrate structure. The first die includes a photonic device on a substrate of the first die, and the substrate includes an optical interface for coupling a back surface of the first die to an optical fiber.

Abstract: A semiconductor die assembly is provided. The semiconductor die assembly includes: a first bottom die and a second bottom die disposed at a bottom vertical level; a first top die disposed at a top vertical level above the bottom vertical level in a vertical direction and bonded to the first bottom die; a second top die disposed at the top vertical level and bonded to the second bottom die; and a linking die disposed at the top vertical level and bonded to both the first bottom die and the second bottom die. The linking die is characterized by a polygonal shape in a horizontal plane perpendicular to the vertical direction, and the polygonal shape is not a rectangle.

Abstract: A robot for interacting with a target object includes a robotic manipulator, a calibrating image, a camera and a processor. The robotic manipulator corresponds to a robotic manipulator coordinate. The calibrating image is disposed on the robotic manipulator. The camera corresponds to a camera coordinate and for shooting the target object and generating a picture. The processor is configured to move the robotic manipulator such that the calibrating image moves towards the target object and enters the picture. The processor records robotic manipulator coordinate datasets and camera coordinate datasets of the calibrating image as the calibrating image moving towards the target object, and uses the robotic manipulator coordinate datasets and the camera coordinate datasets to execute a hand-eye calibrating algorithm to obtain a calibrated mapping between the camera coordinate and the robotic manipulator coordinate.

Abstract: A semiconductor die includes a first semiconductor substrate; a first interconnect structure disposed on a front side of the first semiconductor substrate; a first through-substrate via (TSV) structure extending through the first semiconductor substrate; and a first fuse structure disposed between and electrically connecting the TSV structure and the first interconnect structure.

Abstract: An array of complementary die sets is attached to a carrier substrate. A continuous complementary-level molding compound layer is formed around the array of complementary die sets. An array of primary semiconductor dies is attached to the array of complementary die sets. A continuous primary-level molding compound layer is formed around the array of primary semiconductor dies. The bonded assembly is diced by cutting along directions that are parallel to edges of the primary semiconductor dies. The sidewalls of the complementary dies are azimuthally tilted relative to sidewalls of the primary semiconductor dies, or major crystallographic directions of a single crystalline material in the carrier substrate are azimuthally tilted relative to sidewalls of the primary semiconductor dies.

Abstract: A three-dimensional device structure includes a die including a semiconductor substrate, an interconnect structure disposed on the semiconductor substrate, a through silicon via (TSV) structure that extends through the semiconductor substrate and electrically contacts a metal feature of the interconnect structure, and an integrated passive device (IPD) embedded in the semiconductor substrate and electrically connected to the TSV structure.

Abstract: A method for forming a semiconductor structure includes receiving a first die having a first interconnect structure and a first bonding layer over the first interconnect structure, and a second die having a second interconnect structure and a second bonding layer over the second interconnect structure; forming a recess indenting into the first bonding layer; and forming a positioning member on the second bonding layer. The method further includes bonding the second die over the first die; and disposing the positioning member into the recess. The positioning member includes dielectric, is surrounded by the first bonding layer, and is isolated from the first interconnect structure and the second interconnect structure.

Abstract: A semiconductor structure and a method for forming the semiconductor structure are disclosed. The method includes the following operations. A first integrated circuit component having a fuse structure is received. A second integrated circuit component having an inductor is received. The second integrated circuit component is bonded to the first integrated circuit component. The inductor is electrically connected to the fuse structure, wherein the inductor is electrically connected to a ground through the fuse structure.

Abstract: A semiconductor structure and a method for forming the semiconductor structure are disclosed. The semiconductor structure includes: a first die including: a fuse structure including a pair of conductive segments, wherein the pair of conductive segments are separated by a void and one of the pair of conductive segments is electrically connected to a bonding pad of the first die; and a second die over and bonded to the first die, the second die including an inductor electrically connected to the one of the pair of conductive segments.

Abstract: A semiconductor processing system includes a first semiconductor processing site and a second semiconductor processing site. The system includes an unmanned electric vehicle configured to carry a portable cleanroom stocker between the first and second semiconductor processing sites. The portable cleanroom stocker is configured to maintain cleanroom conditions within the portable cleanroom stocker during transportation.

Abstract: A semiconductor die stack includes a first semiconductor die having a first lattice direction, and a second semiconductor die bonded to the first semiconductor die and having a second lattice direction different than the first lattice direction.