Abstract: The present disclosure provides a light-emitting device having a patterned interface composed of a plurality of predetermined patterned structures mutually distinct, wherein the plurality of predetermined patterned structures are repeatedly arranged in the patterned interface such that any two neighboring patterned structures are different from each other. The present disclosure also provides a manufacturing method of the light-emitting device. The method comprises the steps of providing a substrate, generating a random pattern arrangement by a computing simulation, forming a mask having the random pattern arrangement on the substrate, and removing a portion of the substrate thereby transferring the random pattern arrangement to the substrate.

Abstract: The present application provides a method of manufacturing an optoelectronic semiconductor device, comprising the steps of: providing a substrate; forming an optoelectronic system on the substrate; forming a barrier layer on the optoelectronic system; forming an electrode on the barrier layer; and annealing the optoelectronic semiconductor device; wherein the optoelectronic semiconductor device has a first forward voltage before the annealing step and has a second forward voltage after the annealing step, and a difference between the second forward voltage and the first forward voltage is smaller than 0.2 Volt.

Abstract: The present application provides a method of manufacturing an optoelectronic semiconductor device, comprising the steps of: providing a substrate; forming an optoelectronic system on the substrate; forming a barrier layer on the optoelectronic system; forming an electrode on the barrier layer; and annealing the optoelectronic semiconductor device; wherein the optoelectronic semiconductor device has a first forward voltage before the annealing step and has a second forward voltage after the annealing step, and a difference between the second forward voltage and the first forward voltage is smaller than 0.2 Volt.

Abstract: The present application provides an optoelectronic semiconductor device, comprising: a substrate; an optoelectronic system on the substrate; a barrier layer on the optoelectronic system, wherein the barrier layer thickness is not smaller than 10 angstroms; and an electrode on the barrier layer.

Abstract: The present disclosure provides a light-emitting device having a patterned interface composed of a plurality of predetermined patterned structures mutually distinct, wherein the plurality of predetermined patterned structures are repeatedly arranged in the patterned interface such that any two neighboring patterned structures are different from each other. The present disclosure also provides a manufacturing method of the light-emitting device. The method comprises the steps of providing a substrate, generating a random pattern arrangement by a computing simulation, forming a mask having the random pattern arrangement on the substrate, and removing a portion of the substrate thereby transferring the random pattern arrangement to the substrate.

Abstract: A method for self bonding epitaxy includes forming a passivation layer on a substrate surface of a semiconductor lighting element; etching to form recesses and protrusive portions with the passivation layer located thereon; starting forming epitaxy on the bottom surface of the recesses; filling the recesses with an Epi layer; then covering the protrusive portions and starting self bonding upwards the epitaxy to finish the Epi layer structure. Such a self bonding epitaxy growing technique can prevent cavity generation caused by parameter errors of the epitaxy and reduce defect density, and improve the quality of the Epi layer and increase internal quantum efficiency.

Abstract: The present invention discloses a method for fabricating a light emitting diode element, which incorporates an epitaxial process with an etching process to etch LED epitaxial layers bottom up and form side-protrudent structures, whereby the LED epitaxial layers have non-rectangular inclines, which can solve the problem of total reflection and promote light-extraction efficiency. Further, the method of the present invention has a simple fabrication process, which can benefit mass production and lower cost.

Abstract: The present invention discloses a method for fabricating a light emitting diode element, which incorporates an epitaxial process with an etching process to etch LED epitaxial layers bottom up and form side-protrudent structures, whereby the LED epitaxial layers have non-rectangular inclines, which can solve the problem of total reflection and promote light-extraction efficiency. Further, the method of the present invention has a simple fabrication process, which can benefit mass production and lower cost.

Abstract: A method for self bonding epitaxy includes forming a passivation layer on a substrate surface of a semiconductor lighting element; etching to form recesses and protrusive portions with the passivation layer located thereon; starting forming epitaxy on the bottom surface of the recesses; filling the recesses with an Epi layer; then covering the protrusive portions and starting self bonding upwards the epitaxy to finish the Epi layer structure. Such a self bonding epitaxy growing technique can prevent cavity generation caused by parameter errors of the epitaxy and reduce defect density, and improve the quality of the Epi layer and increase internal quantum efficiency.