Abstract: A power supply system is introduced herein. The power supply system includes a power converter to supply a power source to an electronic circuit through an output cable of the power supply. A communication unit is coupled to the output cable of the power supply to develop a communication channel between the power converter and the electronic circuit in order to report the status of the power converter to the electronic circuit.

Abstract: A voltage-waveform detector produces a voltage-feedback signal and a discharge-time signal by multi-sampling a voltage signal of a transformer. The discharge-time signal represents a discharge time of a secondary-side switching current. A voltage-loop error amplifier amplifies the voltage-feedback signal and generates a control signal. An off-time modulator correspondingly generates a discharge-current signal and a standby signal in response to the control signal and an under-voltage signal. The under-voltage signal indicates a low supply voltage of the controller. An oscillator produces a pulse signal in response to the discharge-current signal. The pulse signal determines the off-time of the switching signal. A PWM circuit generates the switching signal in response to the pulse signal and the standby signal. The standby signal further controls the off-time of the switching signal and maintains a minimum switching frequency. The switching signal is used for regulating the output of the power supply.

Abstract: The present invention discloses a switching control circuit for a primary-side controlled power converter. A voltage-waveform detector produces a voltage-feedback signal and a discharge-time signal. A current-waveform detector generates a current-waveform signal by measuring a primary-side switching current. An integrator generates a current-feedback signal by integrating the current-waveform signal with the discharge time. A time constant of the integrator is correlated with the switching frequency, thus the current-feedback signal is proportional to an output current of the power converter. A PWM circuit controls the pulse width of the switching signal in response to the outputs of a voltage-loop error amplifier and a current-loop error amplifier. The output voltage and the maximum output current of the power converter are therefore regulated.

Abstract: An electrostatic discharge (ESD) device with a parasitic silicon controlled rectifier (SCR) structure and controllable holding current is provided. A first distance is kept between a first N+ doped region and a first P+ doped region, and a second distance is kept between a second P+ doped region and a third N+ doped region. In addition, the holding current of the ESD device can be set to a specific value by modulating the first distance and the second distance. The holding current is in inverse proportion to the first distance and the second distance.

Abstract: A structure of an electrostatic discharge (ESD) device integrated with a pad is provided. The ESD device is integrated with the pad and formed under the pad. By using the area under the pad, the ESD device does not occupy additional space of an integrated circuit. Furthermore, since the pad is a large, plate, and ideal conductor, the connected pad and the ESD device are capable of distributing current in the ESD device averagely.

Abstract: A method of manufacturing different-voltage devices mainly comprises forming at least one high-voltage well in high-voltage device regions, at least one N-well in low-voltage device regions, at least one P-well in low-voltage device regions, source/drain wells in high-voltage device regions, and isolation wells in isolation regions in a p-type substrate. The breakdown voltage is adjusted by modulating the ion doping profile. Furthermore, parameters of implanting conductive ions are adjusted for implanting conductive ions into both high-voltage device regions and low-voltage device regions. The isolation wells formed in isolation regions between devices are for separating device formed over high-voltage device regions and device formed over low-voltage device regions. The thickness of a HV gate oxide layer is thicker than the thickness of an LV gate oxide layer for modulating threshold voltages of high-voltage devices and low-voltage devices.

Abstract: A multiple-sampling circuit is proposed for measuring a voltage signal and a discharge time of a transformer. Sampling signals are used for generating hold voltages by alternately sampling the reflected voltage from the transformer. A buffer amplifier generates a buffer voltage from the higher voltage of hold voltages. A sampling switch periodically conducts the buffer voltage to produce a voltage-feedback signal. The voltage-feedback signal is proportional to an output voltage of the switching circuit. A threshold signal added to the reflected voltage signal produces a level-shift reflected signal. A discharge-time signal is generated as the switching signal is disabled. The discharge-time signal is disabled once the level-shift signal is lower than the voltage-feedback signal. The pulse width of the discharge-time signal is therefore correlated to the discharge time of the transformer. The sampling signals are enabled to generate hold voltages only when the discharge-time signal is enabled.

Abstract: A high voltage LDMOS transistor according to the present invention includes at least one P-field block in the extended drain region of the N-well. The P-field blocks form junction-fields in the N-well for equalizing the capacitance of parasitic capacitors between the drain region and the source region and fully deplete the drift region before breakdown occurs. A higher breakdown voltage is therefore achieved and the N-well having a higher doping density is thus allowed. The source region and P-field blocks enclose the drain region, which makes the LDMOS transistor self-isolated.

Abstract: A method and apparatus to dynamically modify internal compensation of a low dropout (LDO) voltage regulator is provided. The LDO voltage regulator includes an output pass transistor, an error amplifier, a bias transistor and a compensation network. The compensation network is connected between a gate and a drain of the output pass transistor to compensate for the feedback loop. The compensation network and the bias transistor generate pole-zero pairs to perform a maximum 45 degrees phase shift before reaching the crossover frequency in the LDO voltage regulator. Therefore a minimum 45 degrees phase margin is provided for the feedback loop in various load conditions. Furthermore, the pole-zero pairs produced in the LDO voltage regulator are adaptively adjusted according to load conditions, so that the bandwidth is optimized and faster transient response is achieved.

Abstract: A structure of an electrostatic discharge (ESD) device integrated with a pad is provided. The ESD device is integrated with the pad and formed under the pad. By using the area under the pad, the ESD device does not occupy additional space of an integrated circuit. Furthermore, since the pad is a large, plate, and ideal conductor, the connected pad and the ESD device are capable of distributing current in the ESD device averagely.

Abstract: An apparatus and method thereof for measuring an output current from a primary side of a power converter are provided. A peak detector is designed to sample a peak value of a converted voltage of a primary-side switching current. A zero-current detector detects a discharge-time of a secondary-side switching current through an auxiliary winding of a transformer. An oscillator generates a switching signal for switching the power converter. An integrator generates an integrated signal by integrating the converted voltage of the primary-side switching peak current with the discharge-time. The time constant of the integrator is correlated with the switching period of the switching signal. The integrated signal is thus proportional to the output current of the power converter.

Abstract: The invention presents a switching control circuit for a primary-side-controlled power converter. A pattern generator produces a digital pattern to control a programmable capacitor that is connected to an oscillator, which produces frequency hopping to reduce the EMI. A voltage-waveform detector produces a voltage-feedback signal and a discharge-time signal by multi-sampling a voltage signal of a transformer. A current-waveform detector and an integrator generate a feedback signal. The integration of a current-waveform signal with a timing signal generates the average-current signal. Time constant of the integrator is correlated to the switching frequency. The oscillator generates the timing signal and a pulse signal in response to the output of a current-loop error amplifier. A PWM circuit generates the switching signal in response to the pulse signal and the output of a voltage-loop error amplifier for switching the switching device and regulating the output of the power converter.

Abstract: A power-mode controlled power converter is capable of supplying a constant output voltage and output current. A PWM controller generates a PWM signal in response to a voltage sampled from a transformer auxiliary winding. A programmable current-sink and a detection resistor compensate for a voltage drop of an output rectifier. A low-pass filter integrates a switching-current voltage to an average-current signal. An attenuator produces an input-voltage signal from a line-voltage input signal. The PWM controller multiplies the average-current signal with the input-voltage signal to generate a power-control signal. An error-amplifier compares the power-control signal with a power-reference voltage to generate a limit voltage. The limit voltage controls the power delivered from a primary-side circuit to a secondary-side circuit of the power-mode controlled power converter. Since the power-reference voltage varies in proportional to output voltage variations, a constant output current is therefore achieved.

Abstract: An electrostatic discharge (ESD) device, which functions like a diode during normal IC operation and like a SCR during an electrostatic discharge event, is provided. To form an equivalent SCR structure, the ESD device includes a plurality of N+ regions and a plurality of P+ regions formed inside an N-well. The P+ regions and the N+ regions are formed adjacent to each other in a sequence, and the regions located at both ends of the sequence are the N+ regions. In addition, the ESD device is integrated with a pad and is formed under the pad. Furthermore, since the pad has a large surface area and is plated to be a good electrical conductor, the current distribution in the ESD device is uniform.

Abstract: A close-loop PWM controller for a primary-side controlled power converter is provided. A voltage-waveform detector produces a voltage-feedback signal and a discharge-time signal. A current-waveform detector generates a current-waveform signal by measuring a primary-side switching current. An integrator generates a current-feedback signal by integrating the current-waveform signal with the discharge-time signal. A time constant of the integrator is correlated with a switching period of the switching signal, therefore the current-feedback signal is proportional to the output current of the power converter. The close-loop PWM controller further including a voltage-loop error amplifier and a current-loop error amplifier. A PWM circuit and comparators control the pulse width of the switching signal in response to the outputs of the voltage-loop error amplifier and the current-loop error amplifier. The output voltage and the maximum output current of the power converter are therefore regulated.

Abstract: A high voltage LDMOS transistor according to the present invention includes a P-field and divided P-fields in an extended drain region of a N-well. The P-field and divided P-fields form junction-fields in the N-well, in which a drift region is fully depleted before breakdown occurs. Therefore, a higher breakdown voltage is achieved and a higher doping density of the N-well is allowed. Higher doping density can effectively reduce the on-resistance of the LDMOS transistor. Furthermore, the N-well generated beneath a source diffusion region provides a low-impedance path for a source region, which restrict the transistor current flow in between a drain region and a source region.

Abstract: A pulse width modulated soft-switching power converter has a transformer with a primary winding and a secondary winding, a secondary circuit coupled to the secondary winding, and a pair of main switches and a pair of auxiliary switches coupled to the primary winding. The main switches and auxiliary switches intermittently conduct an input voltage source to the primary winding of the transformer to operate the soft-switching power converter in four operation stages in each switching cycle. The main switches conduct the input voltage source to the transformer in a first operation stage. In a second operation stage, the conduction is cut off. The transformer operates as an inductor with the auxiliary switches switched on under zero-voltage or zero-current switching mode in a third operation stage. In the fourth operation stage, auxiliary switches are switched off to achieve zero-voltage transition.

Abstract: The isolated high-voltage LDMOS transistor according to the present invention includes a split N-well and P-well in the extended drain region. The P-well is split in the extended drain region of the N-well to form a split junction-field in the N-well. The split N-well and P-well deplete the drift region, which shifts the electric field maximum into the bulk of the N-well. This achieves a higher breakdown voltage and allows the N-well to have a higher doping density. Furthermore, the LDMOS transistor according to the present invention includes a N-well embedded beneath the source diffusion region. This creates a low-impedance path for the source region, which restricts the transistor current flow between the drain region and the source region.

Abstract: A regulated power supply having power factor correction control includes a multi-vector error amplifier. The multi-vector error amplifier provides an error signal that is used to regulate a switching mechanism of the power supply. The multi-vector error amplifier acts to provide a low distortion error signal during steady-state operation, while responding rapidly and smoothly to sudden load changes.

Abstract: A high voltage LDMOS transistor according to the present invention includes P-field blocks in the extended drain region of a N-well. The P-field blocks form the junction-fields in the N-well for equalizing the capacitance of parasitic capacitors between the drain region and the source region and fully deplete the drift region before breakdown occurs. A higher breakdown voltage is therefore achieved and the N-well having a higher doping density is thus allowed. The higher doping density reduces the on-resistance of the transistor. Furthermore, the portion of the N-well generated beneath the source diffusion region produces a low-impedance path for the source region, which restricts the transistor current flow in between the drain region and the source region.