Abstract: A device is provided, including a package substrate including at least one opening extending through the package substrate, and an interconnect structure including a first segment and a second segment. The first segment may extend under a bottom surface of the package substrate and may further extend beyond a footprint of the package substrate. The second segment may extend vertically from the first segment and may extend at least partially through the at least one opening of the package substrate.

Abstract: Semiconductor packages, and methods for making the semiconductor packages, having an interposer structure with one or more interposer and an extension platform, which has an opening for placing the interposer, and the space between the interposer and the extension platform is filled with a polymeric material to form a unitary interposer-extension platform composite structure. A stacked structure may be formed by at least a first semiconductor chip coupled to the interposer and at least a second semiconductor chip coupled to the extension platform, and at least one bridge extending over the space that electrically couples the extension platform and the interposer. The extension platform may include a recess step section that may accommodate a plurality of passive devices to reduced power delivery inductance loop for the high-density 2.5D and 3D stacked packaging applications.

Abstract: The present disclosure is directed to semiconductor packages incorporating composite or hybrid bridges that include first and second interconnect bridges positioned on a substrate and a power corridor with a plurality of vertical channels positioned on the substrate between the first and second interconnect bridges, wherein the power corridor integrally joins the first interconnect bridge to the second interconnect bridge.

Abstract: The present disclosure is directed to an electronic assembly and method of forming thereof. The electronic assembly may include a substrate and a first die with first and second opposing surfaces. The first die may be coupled to the substrate at the first surface. At least one first trench may extend partially through the first die from the second surface. A stiffener may be attached to the substrate. The stiffener may have a cavity that accommodates the first die, in which the second surface of the first die faces the stiffener. A thermally conductive layer may be positioned between the stiffener and the first die. The conductive layer at least partially fills the at least one first trench.

Abstract: Disclosed herein are integrated circuit (IC) structures with a conductive element coupled to a first surface of a package substrate, where the conductive element has cavities for embedding components and the embedded components are electrically connected to the conductive element, as well as related apparatuses and methods. In some embodiments, embedded components have one terminal end, which may be positioned vertically, with the terminal end facing into the cavity, and coupled to the conductive element. In some embodiments, embedded components have two terminal ends, which may be positioned vertically with one terminal end coupled to the conductive element and the other terminal end coupled to the package substrate. In some embodiments, embedded components include passive devices, such as capacitors, resistors, and inductors. In some embodiments, a conductive element is a stiffener.

Abstract: A semiconductor package includes a package substrate, a base die including a first die surface coupled to the package substrate, and a second die surface opposite to the first die surface, and a first device including a first device surface coupled to the package substrate, and a second device surface opposite to the first device surface. The semiconductor package further includes a second device including a third device surface coupled to the second device surface, and a fourth device surface opposite to the third device surface, and a bridge including a first portion coupled to the package substrate, and a second portion coupled to the first portion, the fourth device surface and the second die surface.

Abstract: The present disclosure is directed to a printed circuit board having a composite upper surface with a first section of a first-type of printed circuit board and a second section of a second-type of printed circuit board, for which the first section of the first-type of printed circuit board and the second section of the second-type of printed circuit board are coupled, respectively, to at least one device that is configured to abridge the first and second sections of the composite upper surface. In an aspect, the second-type of printed circuit board is configured to be embedded in the first-type of printed circuit board and the first-type of printed circuit board is configured to receive the second-type of printed circuit board.

Abstract: An electronic device includes a package substrate; a memory integrated circuit (IC) mounted on the package substrate; a mold layer including one or more chiplets and a base IC die within the mold layer, the one or more chiplets arranged on the base IC die; a top chiplet mounted on a surface of the mold layer, wherein a combined height of the mold layer and the top chiplet substantially matches a height of the memory IC; and a heat spreader having a uniform surface contacting the memory IC and the top chiplet.

Abstract: A semiconductor package includes a silicon die including a first die surface coupled to a package substrate, a second die surface opposite to the first die surface, and at least one die sidewall orthogonal to the first die surface and the second die surface, and a mold layer including a first mold surface, a second mold surface opposite to the first mold surface, and at least one mold sidewall orthogonal to the first mold surface and the second mold surface, the at least one mold sidewall being disposed along the at least one die sidewall, and the mold layer further including a power conductive corridor extending from the first mold surface and coupled to the package substrate through the first mold surface. The semiconductor package further includes a first stacked device coupled to the first die surface and to the power conductive corridor through the first mold surface.

Abstract: A semiconductor package including: a package substrate including a base die disposed on a top surface of the package substrate, the base die including a plurality of electrical components disposed on a top surface of the base die, the plurality of electrical components including a first electrical component configured adjacent to a second electrical component, wherein the first electrical component and the second electrical component have an asymmetric form-factor; and a stiffener including: a stiffener main portion, wherein the stiffener main portion is affixed to the top surface of the package substrate and configured at least partially surrounding the base die; and a stiffener extension portion configured to extend from the stiffener main portion to be disposed at least partially over the top surface of the base die adjacent to the first electrical component and the second electrical component.

Abstract: An apparatus is provided which comprises: one or more dielectric layers forming a substrate, one or more first conductive contacts on a top surface of the substrate, one or more second conductive contacts on a bottom surface of the substrate opposite of the top surface, and one or more discrete capacitors conductively coupled with one or more of the first and second conductive contacts, the one or more discrete capacitors embedded within the substrate between the top surface and the bottom surface. Other embodiments are also disclosed and claimed.

Abstract: The present disclosure generally relates to an electronic assembly. The electronic assembly may include a first substrate including a first surface, an opposing second surface and a recess opening extending through the first surface. The electronic assembly may also include a power delivery mold frame including a first mold surface, an opposing second mold surface, a plurality of first metal planes and a plurality of second metal planes extending between the first and second mold surfaces, the power delivery mold frame arranged in the recess opening and coupled to the first substrate through the first mold surface. The electronic assembly may further include a second substrate including a subsequent first surface, an opposing subsequent second surface, the second substrate coupled to the power delivery mold frame through a plurality of first solder bumps and further coupled to the first substrate through a plurality of second solder bumps at the subsequent first surface.

Abstract: Two conductive reference layers are embedded in a semiconductor package substrate. The embedded reference layers facilitate low electromagnetic noise coupling between adjacent signals for semiconductor device package.

Abstract: Foldable Compression Attached Memory Modules (fCAMMs) and associated apparatus, assemblies and systems. The fCAMM comprises a compression contact module having a plurality of contact means arranged in one or more arrays on its underside, first and second fold modules including multiple memory devices, and flexible interconnects coupling the compression contact module to the first and second fold modules. Under one assembled configuration, portions of printed circuit boards (PCBs) for the first and second fold modules are folded over portions of the compression contact module. Under another configuration, the first fold module is disposed above the second fold module, which is disposed above the compression contact module. In an assembly or system including a motherboard, a compression mount technology (CMT) connector or a land grid array (LGA) assembly is disposed between the motherboard and the compression contact module. Bolster plates are used to urge the compression contact module toward the motherboard.

Abstract: The present disclosure is directed to multichip semiconductor packages, and methods for making them, which includes a package substrate with an integrated bridge frame having a first horizontal portion positioned on a top surface of the package substrate, with first and second dies positioned overlapping the first horizontal portion of the bridge frame, and a second horizontal portion positioned on the bottom surface of the package substrate, with third and fourth dies positioned overlapping the second horizontal portion of the bridge frame. The bridge frame further includes first and second vertical portions separated by a portion of the package substrate positioned under the first horizontal portion of the bridge frame between the top surface and bottom surfaces of the package substrate, and a plurality of vertical interconnects adjacent to the first and second vertical portions of the bridge frame.

Abstract: Disclosed embodiments include composite-bridge die-to-die interconnects that are on a die side of an integrated-circuit package substrate and that contacts two IC dice and a passive device that is in a molding material, where the molding material also contacts the two IC dice.

Abstract: According to various examples, a device is described. The device may include a stiffener member including a first step section and a second step section. The device may also include a plurality of vias extending from or through the stiffener member. The device may be coupled to a printed circuit board.

Abstract: Disclosed embodiments include frame-array interconnects that have a ledge portion to accommodate a passive device. A seated passive device is between at least two frame-array interconnects for semiconductor package-integrated decoupling capacitors.

Abstract: The present disclosure is directed to semiconductor packages, and methods for making them, which includes a substrate with a top surface and a bottom surface, a substrate recess in the bottom surface of the substrate, a first device positioned over the top surface of the substrate, which has the first device at least partially overlapping the substrate recess, a mold material in the substrate recess, which has the mold material overlapping the bottom surface of the substrate adjacent to the substrate recess, a second device positioned in the substrate recess, and a plurality of interconnect vias in the substrate, which has at least one of the plurality interconnect vias coupled to the first and second devices to provide a direct signal connection therebetween that minimizes signal latency.

Abstract: According to the various aspects, a multi-chip semiconductor package includes a package substrate, an interconnect frame extending beyond a first side edge of the package substrate, the interconnect frame including a bottom surface positioned over and coupled to a top surface of the package substrate, a first semiconductor device positioned at least partially over and coupled to the interconnect frame, and a second semiconductor device positioned on the bottom surface of the interconnect frame alongside of the package substrate. The interconnect frame further includes a redistribution layer and a frame construct layer, and a plurality of vias coupled to the redistribution layer, with the frame construct layer further includes a recessed area, and the first semiconductor device is positioned in the recessed area.