Abstract: Disclosed embodiments include frame-array interconnects that have a ledge portion to accommodate a passive device. A seated passive device is between at least two frame-array interconnects for semiconductor package-integrated decoupling capacitors.

Abstract: The present disclosure is directed to semiconductor packages, and methods for making them, which includes a substrate with a top surface and a bottom surface, a substrate recess in the bottom surface of the substrate, a first device positioned over the top surface of the substrate, which has the first device at least partially overlapping the substrate recess, a mold material in the substrate recess, which has the mold material overlapping the bottom surface of the substrate adjacent to the substrate recess, a second device positioned in the substrate recess, and a plurality of interconnect vias in the substrate, which has at least one of the plurality interconnect vias coupled to the first and second devices to provide a direct signal connection therebetween that minimizes signal latency.

Abstract: According to the various aspects, a multi-chip semiconductor package includes a package substrate, an interconnect frame extending beyond a first side edge of the package substrate, the interconnect frame including a bottom surface positioned over and coupled to a top surface of the package substrate, a first semiconductor device positioned at least partially over and coupled to the interconnect frame, and a second semiconductor device positioned on the bottom surface of the interconnect frame alongside of the package substrate. The interconnect frame further includes a redistribution layer and a frame construct layer, and a plurality of vias coupled to the redistribution layer, with the frame construct layer further includes a recessed area, and the first semiconductor device is positioned in the recessed area.

Abstract: The present disclosure relates to a semiconductor package that may include a substrate, an interposer coupled to the substrate, a shield frame including at least one frame recess and at least one opening positioned over the interposer, a conductive shield layer on the shield frame, and a plurality of components coupled to the interposer.

Abstract: According to various examples, a semiconductor package is described including a substrate raiser with interconnect vias that may be positioned on the bottom side of a substrate and mini solder balls positioned on the interconnect vias and a plurality of large solder balls positioned on the bottom side of the substrate adjacent to the substrate raiser, wherein the mini solder balls and the large solder balls extend approximately a same height from the substrate for mounting on a printed circuit board.

Abstract: An electronic device and associated methods are disclosed. In one example, the electronic device can include a semiconductor package including a package substrate, a first semiconductor die on the package substrate, a second semiconductor die on the package substrate, a third semiconductor die on the package substrate, and a bridge interconnect at least partially embedded in the package substrate. The bridge interconnect can include a first bridge section coupling the first semiconductor die to the second semiconductor die, a second bridge section coupling the second semiconductor die to the third semiconductor die, and a power-ground section between the first section and the second section, the power-ground section comprising first and second conductive traces coupled to the second semiconductor die.

Abstract: Disclosed embodiments include composite-bridge die-to-die interconnects that are on a die side of an integrated-circuit package substrate and that contacts two IC dice and a passive device that is in a molding material, where the molding material also contacts the two IC dice.

Abstract: A capacitor loop substrate assembly includes a substrate with a loop shape, one or more capacitors or other electronic components on the substrate, and an opening in the substrate to allow the capacitor loop substrate assembly to be coupled to an integrated circuit package, such as a package including a die. Interconnects and/or contacts for interconnects are formed in an integrated circuit package to couple the capacitor loop substrate assembly to the integrated circuit package.

Abstract: A semiconductor package including a molded power delivery module arranged between a package substrate and a semiconductor chip and including a plurality of input conductive structures and a plurality of reference conductive structures, wherein the input conductive structures alternate between the plurality of reference conductive structures, wherein the input conductive structure is electrically coupled with a chip input voltage terminal and a package input voltage terminal, wherein each of the plurality of reference conductive structures are electrically coupled with a semiconductor chip reference terminal and a package reference terminal.

Abstract: An electronic device and associated methods are disclosed. In one example, the electronic device includes a substrate, a semiconductor die thereon, electrically coupled to the substrate, and an interposer adapted to connect the substrate to a circuit board. The interposer can include a major surface, a recess in the major surface, a first plurality of interconnects passing through the interposer within the recess to electrically couple the substrate to a circuit board, and a second plurality of interconnects on the major surface of the interposer to electrically couple the substrate to the circuit board, wherein each of the second plurality of interconnects comprises a smaller cross-section than some of the first plurality of interconnects.

Abstract: Disclosed embodiments include multi-level fan-out integrated-circuit package substrates that provide a low-loss path to active and passive devices, by shunting away from interconnects and inductive loops. The multi-level form factor of a molded mass, allows for the low-loss path.

Abstract: According to the various aspects, a package substrate with a heterogeneous substrate core including a first core layer that is coextensive with the package substrate and extends through a first section and a second section of the substrate core, in which the first section is adjacent to and thicker than the second section. The first section having at least a second layer and/or a third layer to provide the difference in thickness with the second section.

Abstract: Disclosed embodiments include silicon interconnect bridges that are in a molded frame, where the molded frame includes passive devices and the silicon interconnect bridge includes through-silicon vias that couple to a redistribution layer on both the silicon interconnect bridge and the molded frame.

Abstract: Disclosed embodiments include molded interconnect bridges that are in a molded frame, where the molded frame includes passive devices that couple to a metal buildup layer that includes at least one power rail and one ground rail. The molded interconnects bridge is embedded in an integrated-circuit package substrate between a die side and a land side, and closer to the die side.

Abstract: An electronic device and associated methods are disclosed. In one example, the electronic device includes a semiconductor article having a package substrate, a first semiconductor die coupled to the package substrate, a second semiconductor die coupled to the package substrate and adjacent the first semiconductor die, and a bridge component therebetween coupling the first semiconductor die to the second semiconductor die. The bridge component can include a bridge substrate, a conductive trace therein, and a passive component coupled to the conductive trace.

Abstract: According to various examples, a device is described. The device may include an interposer. The device may also include a plurality of first through-silicon-vias disposed in the interposer, wherein the plurality of first through-silicon-vias have a first diameter. The device may also include a plurality of second through-silicon-vias disposed in the interposer, wherein the plurality of second through-silicon-vias have a second diameter larger than the first via diameter. The device may also include a first recess in the interposer positioned at bottom ends of the plurality of second through-silicon-vias.

Abstract: The present disclosure relates to a semiconductor package, that may include a package substrate, a base die arranged on and electrically coupled to the package substrate, and at least one power plane module arranged on the package substrate at a periphery of the base die. The power plane module may include a top surface and a bottom surface, and at least one vertical interleaving metal layer electrically coupled at the bottom surface to the package substrate. The semiconductor package may further include a semiconductor device including a first section disposed on the base die, and a second section disposed on the power plane module, wherein the second section of the semiconductor device may be electrically coupled to the at least one vertical interleaving metal layer at the top surface of the power plane module.

Abstract: A faceted integrated-circuit die includes a concave facet with an increased interconnect breakout area available to an adjacent device such as a rectangular IC die that is nested within the form factor of the concave facet. The concave facet form factor includes a ledge facet and a main-die facet. Multiple nested faceted IC dice are disclosed for increasing interconnect breakout areas and package miniaturization. A faceted silicon interposer has a concave facet that also provides an increased interconnect breakout area and package miniaturization.

Abstract: An electronic device and associated methods are disclosed. In one example, the electronic device can include a semiconductor package including a package substrate, a first semiconductor die on the package substrate, a second semiconductor die on the package substrate, a third semiconductor die on the package substrate, and a bridge interconnect at least partially embedded in the package substrate. The bridge interconnect can include a first bridge section coupling the first semiconductor die to the second semiconductor die, a second bridge section coupling the second semiconductor die to the third semiconductor die, and a power-ground section between the first section and the second section, the power-ground section comprising first and second conductive traces coupled to the second semiconductor die.

Abstract: According to various examples, a device is described. The device may include a printed circuit board. The device may also include a first recess in the printed circuit board, wherein the first recess comprises a circular side surface and a bottom surface. The device may also include a first solder ball disposed in the first recess. The device may also include a first conductive wall positioned behind the circular side surface of the first recess, wherein the first conductive wall surrounds a side surface of the first solder ball.