Abstract: A semiconductor stripe laser has a first semiconductor region having a first conductivity type and a second semiconductor region having a different, second conductivity type. An active zone for generating laser radiation is located between the semiconductor regions. A stripe waveguide is formed in the second semiconductor region and is arranged to guide waves in a one-dimensional manner and is arranged for a current density of at least 0.5 kA/cm2. A second electrical contact is located on the second semiconductor region and on an electrical contact structure for external electrical contacting. An electrical passivation layer is provided in certain places on the stripe waveguide. A thermal insulation apparatus is located between the second electrical contact and the active zone and/or on the stripe waveguide.

Abstract: A semiconductor strip laser and a semiconductor component are disclosed. In embodiments the laser includes a first semiconductor region of a first conductivity type of a semiconductor body, a second semiconductor region of a second different conductivity type of the semiconductor body, at least one active zone of the semiconductor body configured to generate laser radiation between the first and second semiconductor regions. The laser further includes a strip waveguide formed at least in the second semiconductor region and providing a one-dimensional wave guidance along a waveguide direction of the laser radiation generated in the active zone during operation, a first electric contact on the first semiconductor region, a second electric contact on the second semiconductor region and at least one heat spreader dimensionally stably connected to the semiconductor body at least up to a temperature of 220° C., and having an average thermal conductivity of at least 50 W/m·K.

Abstract: An after-market golf club grip for attachment to the shaft of a golf club includes an elongate outer body and absorption means for absorbing vibration in the outer body when the golf club strikes a golf ball. The outer body defines a bore along its longitudinal axis to accommodate a golf club shaft. The outer body is made up of a plurality of elongate outer body sections which can to assembled together to form the outer body. Such outer body sections are attachable to one another by reversible attachment fasteners which allow the outer body to be reversibly attached to and de-attached from a shaft of a golf club. The absorption means are provided by a plurality of controlled absorption inserts disposed around the longitudinal axis of the outer body. Each absorption insert defines a central aperture to accommodate a golf club shaft.

Abstract: A semiconductor laser includes a main body and a ridge structure arranged on the main body, the ridge structure being oriented along a longitudinal axis above an active zone, wherein the ridge structure has a first width, the ridge structure has two opposite end faces along the longitudinal axis, adjacent to at least one end face, the ridge structure has an end section arranged on one side with respect to a center axis of the ridge structure such that the ridge structure is widened on one side adjacent to the end face, and on an opposite side of the ridge structure relative to the end section a fracture trench is arranged adjacent to the end face and at a distance from the ridge structure in a surface of the main body.

Abstract: A semiconductor stripe laser has a first semiconductor region having a first conductivity type and a second semiconductor region having a different, second conductivity type. An active zone for generating laser radiation is located between the semiconductor regions. A stripe waveguide is formed in the second semiconductor region and is arranged to guide waves in a one-dimensional manner and is arranged for a current density of at least 0.5 kA/cm2. A second electrical contact is located on the second semiconductor region and on an electrical contact structure for external electrical contacting. An electrical passivation layer is provided in certain places on the stripe waveguide. A thermal insulation apparatus is located between the second electrical contact and the active zone and/or on the stripe waveguide.

Abstract: A laser component includes an edge-emitting first laser chip with an upper side, a lower side, an end side and a side surface, wherein an emission region is arranged on the end side, the side surface is oriented perpendicularly to the upper side and to the end side, a first metallization is arranged on the upper side, a step by which a part adjacent to the upper side of the side surface is set back, is formed on the side surface, a passivation layer is arranged in the set-back part of the side surface, the laser chip is arranged on a carrier, the side surface faces toward a surface of the carrier, and a first solder contact arranged on the surface of the carrier electrically conductively connects to the first metallization.

Abstract: In at least one embodiment, the bar laser (1) has a semiconductor layer sequence (2) with an active zone (20). A waveguide (3) with a defined width (B) is formed as an elevation from the semiconductor layer sequence (2). A contact metallization (4) is applied to an upper side (30) of the waveguide (3) facing away from the active zone (20). A current flow layer (5) is in direct contact with the contact metallization (4). The contact metallization (4) is electrically connected via the current flow layer (5). A current flow width (C) of the active zone (20) and/or the waveguide (3) is less than the width (B) of the waveguide (3).

Abstract: The invention relates to a mould material mixture for producing casting moulds for metal processing, a process for producing casting moulds, casting moulds which can be obtained by the process and their use. The production of the casting moulds is carried out using a refractory base moulding material and a binder based on water glass. A proportion of a particulate metal oxide selected from the group consisting of silicon dioxide, aluminium oxide, titanium oxide and zinc oxide is added to the binder, with particular preference being given to using synthetic amorphous silicon dioxide. The mould material mixture contains a surface-active material as further significant constituent. The addition of the surface-active material enables the flowability of the mould material mixture to be improved, which makes it possible to produce casting moulds having a very complicated geometry.

Abstract: A semiconductor laser includes a main body, a strip having a narrower width provided on the main body, and an active zone that generates light radiation, wherein surfaces of the main body laterally with respect to the strip and side surfaces of the strip are covered with an electrically insulating protective layer, an electrically conductive layer as a contact is provided on a top side of the strip, a cavity is provided between a side surface of the strip and the protective layer at least in a delimited section.

Abstract: Materials and methods for producing particular steviol glycosides, and high-purity compositions of particular steviol glycosides with improved sensory profilesare provided herein. The steviol glycosides can be, for example, rebaudioside D, rebaudioside A, and rebaudioside B, and can be produced by recombinant microorganisms.

Abstract: The invention relates to a process for producing viscoelastic flexible polyurethane foams by reacting a) polyisocyanates with b) compounds having at least two hydrogen atoms which are reactive toward isocyanate groups, c) blowing agents, wherein the compounds having at least two hydrogen atoms which are reactive toward isocyanate groups b) comprise b1) from 0 to 90 parts by weight of at least one polyether alcohol consisting of exclusively propylene oxide units or propylene oxide units and not more than 50% by weight, based on the total weight of the alkylene oxides used, of ethylene oxide units in the polyether chain and having a nominal functionality of from 3 to 8 and a hydroxyl number in the range from 100 to 350 mg KOH/g, and b2) from 10 to 100 parts by weight of at least one graft polyol which can be prepared by in-situ polymerization of olefinically unsaturated monomers in at least one polyether alcohol which has exclusively propylene oxide units or propylene oxide units and not more than 50% by wei

Abstract: A panel for cladding a ceiling or wall in a cabin, especially the cabin of a passenger aircraft, in which a board is laminated on both sides with a cover layer which is made of fibrous material or fabric, which is impregnated with resin or a thermoplastic material, and is cured under the effects of pressure and temperature, said board having at least one core with a honeycomb structure formed by a large number of walls, said walls being compressed or bent in a pre-defined region of the board by between 5% and 50%.

Abstract: The present invention relates to a process for preparing polyether polyols, in which at least one hydroxyl-comprising fatty acid ester and/or at least one hydroxyl-modified fatty acid ester is reacted with the aid of a double metal cyanide catalyst in at least two process sections with in each case a mixture of ethylene oxide and at least one further alkylene oxide different from ethylene oxide.

Abstract: In at least one embodiment, the bar laser (1) has a semiconductor layer sequence (2) with an active zone (20). A waveguide (3) with a defined width (B) is formed as an elevation from the semiconductor layer sequence (2). A contact metallization (4) is applied to an upper side (30) of the waveguide (3) facing away from the active zone (20). A current flow layer (5) is in direct contact with the contact metallization (4). The contact metallization (4) is electrically connected via the current flow layer (5). A current flow width (C) of the active zone (20) and/or the waveguide (3) is less than the width (B) of the waveguide (3).

Abstract: A semiconductor stripe laser has a first semiconductor region having a first conductivity type and a second semiconductor region having a different, second conductivity type. An active zone for generating laser radiation is located between the semiconductor regions. A stripe waveguide is formed in the second semiconductor region and is arranged to guide waves in a one-dimensional manner and is arranged for a current density of at least 0.5 kA/cm2. A second electrical contact is located on the second semiconductor region and on an electrical contact structure for external electrical contacting. An electrical passivation layer is provided in certain places on the stripe waveguide. A thermal insulation apparatus is located between the second electrical contact and the active zone and/or on the stripe waveguide.

Abstract: The invention relates to a power tool, such as an impact drilling machine, impact screwdriver, saber saws, grinders, or the like, comprising a housing. In the housing, an electric motor and an electric or electronic module that is attached to holders in the housing, for example, an electric switch or electronics, are provided. Between the holders in the housing and the electrical or electronic modules, a vibration decoupling element is disposed.

Abstract: The invention relates to a device for testing pressure sensors for internal combustion engines, comprising a pressure chamber, which has an inlet opening, an outlet opening, and a test opening for receiving a pressure sensor to be tested, a valve for opening and closing the inlet opening, and a valve for opening and closing the outlet opening. The valve for opening and closing the inlet opening comprises a rotatably mounted roll as a closing element. The roll has a radially continuous bore hole, wherein the bore hole is in line with the inlet opening in a first rotational angle position of the roll and the roll closes the inlet opening in a second rotational angle position.