Abstract: An electronic device including a functional unit, a storage unit, and a data transmission apparatus. The functional unit provides a function to a superordinate electronic apparatus. The data transmission apparatus transmits data from the storage unit to the functional unit. The storage unit includes a plurality of memory cells and an error correction unit configured to generate a set of correction data for a set of payload data, to store the set of correction data in the memory cells, to read the set of payload data and the set of correction data from the memory cells in response to an individual read request from the data transmission apparatus, to correct the set of payload data and the set of correction data using the set of correction data, and to make both the corrected payload data and the corrected correction data available for the data transmission apparatus.

Abstract: What is proposed is a solution for processing errors in a sequence of bits, wherein the sequence of bits, in the error-free case, forms a codeword of an error code, wherein the error code is based on an H-matrix or is able to be determined thereby, wherein an error syndrome is determined for the sequence of bits, wherein a link is determined between components of the error syndrome and parts of the H-matrix, and wherein two adjacent bits in the sequence of bits are corrected if the link adopts a predefined value.

Abstract: Systems, methods, and circuitries are provided for checking integrity of code received from an external memory. In one example, a system includes a non-volatile memory and a controller. The non-volatile memory includes a first partition configured to store first data corresponding to program code and a second partition configured to store second data corresponding to a copy of the first data. The controller that includes a processor and comparator circuitry. The comparator circuitry is configured to receive a portion of the first data and a corresponding portion of the second data, compare the portion of the first data to the portion of the second data, when the portion of the first data matches the portion of the second data, provide the portion of the first data to the processor, and when the portion of the first data does not match the portion of the second data, generate an alarm signal.

Abstract: Systems, methods, and circuitries are provided for checking integrity of code received from an external memory. In one example, a system includes a non-volatile memory and a controller. The non-volatile memory includes a first partition configured to store first data corresponding to program code and a second partition configured to store second data corresponding to a copy of the first data. The controller that includes a processor and comparator circuitry. The comparator circuitry is configured to receive a portion of the first data and a corresponding portion of the second data, compare the portion of the first data to the portion of the second data, when the portion of the first data matches the portion of the second data, provide the portion of the first data to the processor, and when the portion of the first data does not match the portion of the second data, generate an alarm signal.

Abstract: An integrated circuit with self-test circuit is provided.

Abstract: Testing of at least one source by a destination is provided, which comprises: (i) the destination supplies a test signal towards the at least one source; (ii) at the at least one source, determining a second output signal based on a first output signal and the test signal via a first function; (iii) conveying the second output signal to the destination; (iv) at the destination, determining a received signal based on the second output signal received from the at least one source and based on the test signal via a second function; and (v) determining whether an error occurred based on the received signal. Also, an according system is provided.

Abstract: Systems, methods, circuits, and devices for data protection are provided. In one example, a data processing device incudes a Physical Unclonable Function (PUF) source that is configured to generate PUF values, a bus, a plurality of bus access components that are configured to access the bus, and a masking information generation circuit. The masking information generation circuit is configured to generate masking information for at least one pair of bus access components using at least one PUF value and to transmit said information to the bus access components. The pair is configured in such a way that one bus access component masks the data according to the masking information generated for the pair before the data is sent over the bus and the other bus access component de-masks the data received over the bus according to the masking information generated for the pair.

Abstract: An integrated circuit with self-test circuit is provided.

Abstract: A memory system having a flexible read reference is disclosed. The system includes a memory partition, a failcount component, and a controller. The memory partition includes a plurality of memory cells. The failcount component is configured to generate failcounts in response to read operations of the memory partition. The controller is configured to calibrate a reference value for the memory partition by utilizing the failcounts.

Abstract: A method for monitoring a resistive memory having an array of cells coupled between respective bitlines and respective wordlines. The method includes determining, by a current determining circuit, a cell current and a cell current change rate of at least one of the cells; determining, by a control circuit, whether the cell current change rate is outside of a cell current change rate predefined range; performing, by the control circuit, a predetermined action if the control circuit determination is positive; and storing, in a memory, the determined cell current at predetermined times, and to store the determined cell current change rate.

Abstract: A method for monitoring a resistive memory having an array of cells coupled between respective bitlines and respective wordlines.

Abstract: A circuit for monitoring a resistive memory having an array of cells coupled between respective bitlines and respective wordlines. The circuit includes a current determining circuit configured to determine a cell current and a cell current change rate of at least one of the cells; and a control circuit configured to: determine whether the cell current change rate is outside of a cell current change rate predefined range; and perform a predetermined action if the control circuit determination is positive.

Abstract: A circuit for monitoring a resistive memory having an array of cells coupled between respective bitlines and respective wordlines. The circuit includes a current determining circuit configured to determine a cell current and a cell current change rate of at least one of the cells; and a control circuit configured to: determine whether the cell current change rate is outside of a cell current change rate predefined range; and perform a predetermined action if the control circuit determination is positive.

Abstract: The disclosure relates to an electronic memory system, and more specifically, to a system to emulate an electrically erasable programmable read-only memory, and a method to emulate an electrically erasable programmable read-only memory. According to an embodiment of the disclosure, a system to emulate an electrically erasable programmable read-only memory is provided, the system including a first memory section and a second memory section, wherein the first memory section comprises a plurality of storage locations configured to store data partitioned into a plurality of data segments and wherein the second memory section is configured to store information mapping a physical address of a data segment stored in the first memory section to a logical address of the data segment.

Abstract: The invention relates to an electronic memory system, and more specifically, to a system for emulating an electrically erasable programmable read only memory in a non-volatile memory device, and a method of emulating an electrically erasable programmable read only memory in a non-volatile memory device. According to an embodiment, a system for emulating an electrically erasable programmable read only memory is provided, the system including a Flash memory, wherein the Flash memory is configurable into a first region and a second region, wherein the first region is adapted to store a first class of data and the second region is adapted to store a second, different class of data.

Abstract: A system and method for performing three scans for testing an address decoder and word line drive circuits is disclosed. The first scan determines whether only one word line is selected. The second scan determines whether the word line rise time to a target voltage level is within a specified time. Finally, the third scan determines whether the correct word line was selected.

Abstract: Embodiments relate to system and methods including a plurality of nonvolatile memory elements wherein sets of least two nonvolatile memory elements each share one select element for selecting one of the nonvolatile memory elements of a particular one of the sets of nonvolatile memory elements for a read operation or a program operation.

Abstract: A method for incrementing an erase counter comprising several marker units is suggested, the method comprising the steps: (i) setting a marker unit in case a preceding marker unit was set; and (ii) not setting the marker unit in case the preceding marker unit was not set.

Abstract: The disclosure relates to systems and methods for performing a word line address scan in a semiconductor memory. More specifically, the disclosure provides a system and method for performing three scans for testing address decoder and word line drive circuits. The first scan determines whether only one word line is selected. The second scan determines whether the word line rise time to a target voltage level is within a specified time. Finally, the third scan determines whether the correct word line was selected. The present disclosure may realize all three scans or a combination of the three scans.

Abstract: A memory system having a flexible read reference is disclosed. The system includes a memory partition, a failcount component, and a controller. The memory partition includes a plurality of memory cells. The failcount component is configured to generate failcounts in response to read operations of the memory partition. The controller is configured to calibrate a reference value for the memory partition by utilizing the failcounts.