Abstract: Systems and methods for securing an emergency exit door on an armrest of a seat are provided. A system includes a latch connected to an armrest of a seat of a vehicle. The latch is moveable relative to the armrest between a stowed position and a deployed position. The latch is structured and arranged to engage an edge of a door that is associated with an exit of the vehicle to hold the door on the armrest.

Abstract: Mechanisms are provided, in a non-volatile memory device comprising a non-volatile memory and a memory controller, for controlling an operation of the non-volatile memory device. The non-volatile memory device receives a single combined memory command for accessing the non-volatile memory. The non-volatile memory device decodes the row address and the column address for the word-line to be accessed by the single combined memory command. The non-volatile memory device accesses the word-line such that at least a most significant bit (MSB) page and a least significant bit (LSB) page are accessed simultaneously.

Abstract: Mechanisms are provided, in a Not AND (NAND) flash memory device, for providing hybrid error correction management. A NAND flash memory module and a node controller coupled to the NAND flash memory module are provided along with a hardware logic implemented error correction code (ECC) engine associated with the node controller. The node controller is configured to determine whether an error count is less than or equal to a first threshold number of error bits and, in response to the error count being less than or equal to the first threshold number of error bits, performing correction of the error bits by the hardware logic implemented ECC engine associated with the node controller. The node controller is also configured to forward uncorrected data to a software logic implemented ECC engine, in response to the error count being greater than the first threshold number of error bits.

Abstract: A method for managing a rechargeable battery. The method includes a computer processor identifying a rechargeable battery within a first device. The method further includes a computer processor identifying a battery maintenance policy associated with the rechargeable battery. The method further includes a computer processor determining a first set of models for implementing the identified battery maintenance policy on the identified rechargeable battery based on the identified battery maintenance policy and one or more environmental factors corresponding to the first device. The method further includes a computer processor installing the first set of models in the first device. The method further includes a computer processor performing an intervention action based, at least in part, on a current state of the first set of models and one or more current environmental factors corresponding to the first device.

Abstract: A method for managing a rechargeable battery. The method includes a computer processor identifying a rechargeable battery within a first device. The method further includes a computer processor identifying a battery maintenance policy associated with the rechargeable battery. The method further includes a computer processor determining a first set of models for implementing the identified battery maintenance policy on the identified rechargeable battery based on the identified battery maintenance policy and one or more environmental factors corresponding to the first device. The method further includes a computer processor installing the first set of models in the first device. The method further includes a computer processor performing an intervention action based, at least in part, on a current state of the first set of models and one or more current environmental factors corresponding to the first device.

Abstract: Mechanisms are provided, in a Not AND (NAND) flash memory device, for providing hybrid error correction management. A NAND flash memory module and a node controller coupled to the NAND flash memory module are provided along with a hardware logic implemented error correction code (ECC) engine associated with the node controller. The node controller is configured to determine whether an error count is less than or equal to a first threshold number of error bits and, in response to the error count being less than or equal to the first threshold number of error bits, performing correction of the error bits by the hardware logic implemented ECC engine associated with the node controller. The node controller is also configured to forward uncorrected data to a software logic implemented ECC engine, in response to the error count being greater than the first threshold number of error bits.

Abstract: Mechanisms are provided, in a non-volatile memory device comprising a non-volatile memory and a memory controller, for controlling an operation of the non-volatile memory device. The non-volatile memory device receives a single combined memory command for accessing the non-volatile memory. The non-volatile memory device decodes the row address and the column address for the word-line to be accessed by the single combined memory command. The non-volatile memory device accesses the word-line such that at least a most significant bit (MSB) page and a least significant bit (LSB) page are accessed simultaneously.

Abstract: A memory is provided that comprises a bank of non-volatile memory cells configured into a plurality of banklets. Each banklet in the plurality of banklets can be enabled separately and independently of the other banklets in the bank of non-volatile memory cells. The memory further comprises peripheral banklet circuitry, coupled to the bank of a non-volatile memory array, that is configured to enable selected subsets of bit lines within a selected banklet within the plurality of banklets. Moreover, the memory comprises banklet select circuitry, coupled to the peripheral banklet circuitry, that is configured to select data associated with a selected banklet for reading out from the banklet or writing to the banklet.

Abstract: Mechanisms are provided, in multi-layer cell (MLC) flash memory device comprising a MLC flash memory and a controller, for controlling an operation of the MLC flash memory device. The controller controls accesses to a block of memory pages in the MLC flash memory to be performed to the full block of memory pages in a MLC mode of operation. The controller determines whether a MLC retirement threshold has been met or exceeded by an operating characteristic of the block of memory pages. The controller, in response to detecting that the operating characteristic of the block of memory pages has met or exceeded the MLC retirement threshold, switches an operating mode associated with the block of memory pages from the MLC mode of operation to a single-level cell (SLC) mode of operation. The controller enforces the SLC mode of operation when performing access operations to the block of memory pages.

Abstract: Mechanisms are provided, in a Not AND (NAND) flash memory device, for providing hybrid error correction management. A NAND flash memory module and a node controller coupled to the NAND flash memory module are provided along with a hardware logic implemented error correction code (ECC) engine associated with the node controller. The node controller is configured to determine whether an error count is less than or equal to a first threshold number of error bits and, in response to the error count being less than or equal to the first threshold number of error bits, performing correction of the error bits by the hardware logic implemented ECC engine associated with the node controller. The node controller is also configured to forward uncorrected data to a software logic implemented ECC engine, in response to the error count being greater than the first threshold number of error bits.

Abstract: A processor includes a processor core, a cache, and a tracker. The processor core is configured to execute persistent write instructions and receive notifications of completed persistent write instructions. The tracker is configured to track the completion state of a persistent write instruction.

Abstract: A memory is provided that comprises a bank of non-volatile memory cells configured into a plurality of banklets. Each banklet in the plurality of banklets can be enabled separately and independently of the other banklets in the bank of non-volatile memory cells. The memory further comprises peripheral banklet circuitry, coupled to the bank of a non-volatile memory array, that is configured to enable selected subsets of bit lines within a selected banklet within the plurality of banklets. Moreover, the memory comprises banklet select circuitry, coupled to the peripheral banklet circuitry, that is configured to select data associated with a selected banklet for reading out from the banklet or writing to the banklet.

Abstract: A processor includes a processor core, a cache, and a tracker. The processor core is configured to execute persistent write instructions and receive notifications of completed persistent write instructions. The tracker is configured to track the completion state of a persistent write instruction.

Abstract: An apparatus and method for combating the effects of bias temperature instability (BTI) and other variability in a memory cell. Bit lines connecting to a memory cell contain two alternate paths that criss-cross to connect a lower portion of a first bit line to an upper portion of a second bit line, and to connect a lower portion of the second bit line to an upper portion of the first bit line. Alternative to activating transistors on the bit lines to read and write to the memory cell, transistors on the alternative paths may be activated to read and write to the memory cell from the opposite bit line. In this fashion, the memory cell may be read through the bit lines to a sense amplifier where the bit values are latched. While the bit values remain latched in the sense amplifier, the transistors on the bit lines are deactivated and the transistors on the alternate paths are activated.

Abstract: An apparatus and method for combating the effects of bias temperature instability (BTI) in a memory cell. Bit lines connecting to a memory cell contain two alternate paths criss-crossing to connect a lower portion of a first bit line to an upper portion of a second bit line, and to connect a lower portion of the second bit line to an upper portion of the first bit line. Alternative to activating transistors on the bit lines to read and write to the memory cell, transistors on the alternative paths may be activated to read and write to the memory cell from the opposite bit lines. The memory cell may be read through the bit lines to a sense amplifier, the transistors on the bit lines are subsequently deactivated and the transistors on the alternate paths are activated to write transposed bit values to the memory cell, thereby reversing the biases.

Abstract: An apparatus and method for combating the effects of bias temperature instability (BTI) and other variability in a memory cell. Bit lines connecting to a memory cell contain two alternate paths that criss-cross to connect a lower portion of a first bit line to an upper portion of a second bit line, and to connect a lower portion of the second bit line to an upper portion of the first bit line. Alternative to activating transistors on the bit lines to read and write to the memory cell, transistors on the alternative paths may be activated to read and write to the memory cell from the opposite bit line. In this fashion, the memory cell may be read through the bit lines to a sense amplifier where the bit values are latched. While the bit values remain latched in the sense amplifier, the transistors on the bit lines are deactivated and the transistors on the alternate paths are activated.

Abstract: A test structure for characterizing a production static random access memory (SRAM) array. The test structure includes a characterization circuit having multiple memory cell columns connected in series to form a ring configuration. The characterization circuit is fabricated on a wafer substrate in common with and proximate to a production SRAM array. The characterization circuit preferably includes SRAM cells having a circuit topology substantially identical to the circuit topology of memory cells within the production SRAM array. In one embodiment, the test structure is utilized for characterizing a multi-port memory array and includes multiple memory cell columns connected in series to form a ring oscillator characterization circuit. Each cell column in the characterization circuit includes multiple SRAM cells each having a latching node and multiple data path access nodes.

Abstract: A sense amplifier is provided that comprises, responsive to receiving a set signal to turn on a set device and a precharged voltage level read bit line signal, a keeper device that turns on responsive to receiving a LOW signal from an inverting amplifier and pulls up the voltage at a first node so that a HIGH signal is output onto a global bit line. Responsive to receiving the set signal to turn on the set device and a read bit line signal that is discharging through a read stack path to ground and responsive to the read bit line signal discharging below a first predesigned voltage level, a read assist device in the sense amplifier turns on responsive to receiving a HIGH signal from the inverting amplifier and pulls down the voltage at the first node so that a LOW state is output onto a global bit line.

Abstract: A circuit structure is provided for performing a logic function within a memory. A plurality of read word line transistors are provided that receive a read word line signal and, upon receiving the read word line signal, the plurality of read word line transistors provide a path from a plurality of bit-line transistors associated with a plurality of physically adjacent memory cells to a read bit-line. In response to an associated memory cell within the memory storing a first value, each of the plurality of read bit-line transistors turns on and provides a path to ground thereby causing a first output value to be output on the read bit-line. In response to all of the plurality of memory cells storing a second value, the plurality of read bit-line transistors turn off thereby preventing a path to ground and a second output value is output on the read bit-line.

Abstract: At least one N-type transistor and at least one P-type transistor separate from the digital circuit are sized to represent the total area of the corresponding type transistors in the digital circuit. The gates of the N-type transistor and P-type transistors are set to voltages according to the corresponding off-state logic levels of the digital circuit. The N-type and P-type transistors form a portion of corresponding current mirror circuits, which can provide outputs to a leakage current monitor and/or a control circuit such as a comparator that determines when leakage current for the N-type or P-type devices has exceeded a threshold. The output of the measurement/control circuit can be used to determine a temperature of and/or control operation of the digital circuit or the system environment of the integrated circuit.