Patents by Inventor Jeo-young Shim

Jeo-young Shim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8035175
    Abstract: A field effect transistor for detecting ionic material and a method of detecting ionic material using the field effect transistor. The field effect transistor for detecting ionic material includes a substrate formed of a semiconductor material, a source region and a drain region spaced apart from each other in the substrate and doped with an opposite conductivity type to that of the substrate, a channel region interposed between the source region and the drain region, an insulating layer disposed on the channel region and formed of an electrically insulating material, a first reference electrode disposed at an edge of the upper portion of the insulating layer and a second reference electrode disposed to be spaced apart from the insulating layer.
    Type: Grant
    Filed: December 20, 2006
    Date of Patent: October 11, 2011
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jeo-young Shim, Kyu-sang Lee, Kyu-tae Yoo, Won-seok Chung
  • Publication number: 20110237460
    Abstract: A microarray package device and a method of manufacturing the same. An effective microarray analyzing reaction is performed by using the microarray package device that provides structural stability and reliable experimental results.
    Type: Application
    Filed: November 3, 2010
    Publication date: September 29, 2011
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Woochang LEE, Jeo-young SHIM, Myo-yong LEE, Kak NAMKOONG, Won-seok CHUNG
  • Patent number: 8021038
    Abstract: A method for identifying a biomolecule using a biomolecule detector having a field effect transistor (FET) is provided. The method comprises the steps of (a) heating a sample containing a biomolecule loaded in the detector to thereby elevate the temperature of the sample; (b) measuring electric current flowing through a channel formed between a source region and a drain region in the FET while raising the temperature in the step (a); (c) obtaining a transition temperature that is the temperature at maximum point of current variation from data measured in the step (b); and (d) identifying the biomolecule using the transition temperature obtained in the step (c).
    Type: Grant
    Filed: April 24, 2008
    Date of Patent: September 20, 2011
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jung-Im Han, Jeo Young Shim, Won Seok Chung, Kak Knamkoong
  • Patent number: 7985453
    Abstract: A method of manufacturing a calibration apparatus for an optical scanner. The method includes reacting a substrate coated with a functional group and a molecule capable of forming an activated excimer to immobilize the molecule on the substrate.
    Type: Grant
    Filed: February 22, 2010
    Date of Patent: July 26, 2011
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jeo-young Shim, Sung-ouk Jung, Jin-na Namgoong, Kyu-tae Yoo, Jang-seok Ma
  • Patent number: 7981666
    Abstract: Provided are a sensing switch and a sensing method using the same. The sensing switch includes: a substrate; a supporter on the substrate; a sensing plate that is connected to a side of the supporter and is in parallel with the substrate by a predetermined distance; a receptor binding region on an upper surface of an end portion of the sensing plate; an electric or magnetic field generation device that induces deflection of the sensing plate when a receptor bound to the receptor binding region is selectively bound to an electrically or magnetically active ligand; and a pair of switching electrodes that are separated by a predetermined distance and is connected when the sensing plate contacts the substrate due to the deflection of the sensing plate. A target material need not be labelled, a signal processing of a fluorescent or electrical detection signal using an analysis apparatus is not required, and a signal can be directly decoded by confirming whether a current flows through the switch.
    Type: Grant
    Filed: July 9, 2010
    Date of Patent: July 19, 2011
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Kyu-tae Yoo, Joon-ho Kim, Jun-hong Min, Sung-ouk Jung, Ji-na Namgoong, Kui-hyun Kim, Jeo-young Shim, Kak Namkoong
  • Patent number: 7943970
    Abstract: Provided is a method of detecting the presence of a target bio-molecule or a concentration of the bio-molecule using a field effect transistor. The method includes: contacting a first sample having a first target bio-molecule with a reference electrode of a field effect transistor; measuring a first electric signal change of the field effect transistor; contacting a second sample with a sensing surface of the same field effect transistor; measuring a second electric signal change of the field effect transistor; and comparing the first electric signal with the second electric signal.
    Type: Grant
    Filed: April 3, 2007
    Date of Patent: May 17, 2011
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Kyu-tae Yoo, Kyu-sang Lee, Jeo-young Shim, Won-seok Chung, Yeon-ja Cho
  • Patent number: 7928740
    Abstract: A device and method are disclosed for detecting biomolecules. More specifically, by measuring the change in the electrical properties of a complex between a probe and carbon nanotubes, a non-label detection is achieved, capable of a rapid, sensitive and electrical detection of the presence and concentration of biomolecules in a sample solution.
    Type: Grant
    Filed: November 14, 2007
    Date of Patent: April 19, 2011
    Assignees: Samsung Electronics Co., Ltd., Seoul National University Industry Foundation
    Inventors: Won Seok Chung, Kyu Tae Yoo, Jeo Young Shim, Junghoon Lee, Misun Cha, JungIm Han, Seungwon Jung
  • Publication number: 20110043213
    Abstract: Provided are a FET-based sensor for detecting an ionic material, an ionic material detecting device including the FET-based sensor, and a method of detecting an ionic material using the FET-based sensor. The FET-based sensor includes: a sensing chamber including a reference electrode and a plurality of sensing FETs; and a reference chamber including a reference electrode and a plurality of reference FETs. The method includes: flowing a first solution into and out of the sensing chamber and the reference chamber of the FET-based sensor; flowing a second solution expected to contain an ionic material into and out of the sensing chamber while continuously flowing the first solution into and out of the reference chamber; measuring a current in a channel region between the source and drain of each of the sensing and reference FETs; and correcting the current of the sensing FETs.
    Type: Application
    Filed: October 26, 2010
    Publication date: February 24, 2011
    Applicant: SAMSUNG ELECTRONICS CO., LTD.,
    Inventors: Kyu-sang LEE, Kyu-tae YOO, Jeo-young SHIM, Jin-tae KIM, Yeon-ja CHO
  • Publication number: 20100329931
    Abstract: Provided are a sensing switch and a sensing method using the same. The sensing switch includes: a substrate; a supporter on the substrate; a sensing plate that is connected to a side of the supporter and is in parallel with the substrate by a predetermined distance; a receptor binding region on an upper surface of an end portion of the sensing plate; an electric or magnetic field generation device that induces deflection of the sensing plate when a receptor bound to the receptor binding region is selectively bound to an electrically or magnetically active ligand; and a pair of switching electrodes that are separated by a predetermined distance and is connected when the sensing plate contacts the substrate due to the deflection of the sensing plate. A target material need not be labelled, a signal processing of a fluorescent or electrical detection signal using an analysis apparatus is not required, and a signal can be directly decoded by confirming whether a current flows through the switch.
    Type: Application
    Filed: July 9, 2010
    Publication date: December 30, 2010
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Kyu-tae YOO, Joon-ho KIM, Jun-hong MIN, Sung-ouk JUNG, Ji-na NAMGOONG, Kui-hyun KIM, Jeo-young SHIM, Kak NAMKOONG
  • Patent number: 7859029
    Abstract: Provided are a FET-based sensor for detecting an ionic material, an ionic material detecting device including the FET-based sensor, and a method of detecting an ionic material using the FET-based sensor. The FET-based sensor includes: a sensing chamber including a reference electrode and a plurality of sensing FETs; and a reference chamber including a reference electrode and a plurality of reference FETs. The method includes: flowing a first solution into and out of the sensing chamber and the reference chamber of the FET-based sensor; flowing a second solution expected to contain an ionic material into and out of the sensing chamber while continuously flowing the first solution into and out of the reference chamber; measuring a current in a channel region between the source and drain of each of the sensing and reference FETs; and correcting the current of the sensing FETs.
    Type: Grant
    Filed: January 9, 2007
    Date of Patent: December 28, 2010
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Kyu-sang Lee, Kyu-tae Yoo, Jeo-young Shim, Jin-tae Kim, Yeon-ja Cho
  • Patent number: 7839134
    Abstract: A method for simultaneously detecting a size and concentration of ionic materials includes measuring voltage drop values of at least three ionic materials of which sizes and concentrations are known using each of at least two FET-based sensors having different electrical characteristics, determining at least three points in a three-dimensional plot from the known sizes, concentrations and the measured voltage drop values, approximating the at least three points into a single plane, measuring a voltage drop value of an ionic material of which size and concentration are unknown using the at least two FET-based sensors, determining equipotential lines existing on the plane using the voltage drop value of the unknown ionic material and determining a cross point between each of the equipotential lines.
    Type: Grant
    Filed: January 4, 2007
    Date of Patent: November 23, 2010
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Kyu-sang Lee, Kyu-tae Yoo, Jeo-young Shim, Won-seok Chung, Yeon-ja Cho
  • Publication number: 20100289509
    Abstract: A device and method are disclosed for detecting biomolecules. More specifically, by measuring the change in the electrical properties of a complex between a probe and carbon nanotubes, a non-label detection is achieved, capable of a rapid, sensitive and electrical detection of the presence and concentration of biomolecules in a sample solution.
    Type: Application
    Filed: November 14, 2007
    Publication date: November 18, 2010
    Applicants: SAMSUNG ELECTRONICS CO., LTD., SEOUL NATIONAL UNIVERSITY INDUSTRY FOUNDATION
    Inventors: Won Seok CHUNG, Kyu Tae YOO, Jeo Young SHIM, Junghoon LEE, Misun CHA, Junglm HAN, Seungwon JUNG
  • Patent number: 7790440
    Abstract: Provided are a sensing switch and a sensing method using the same. The sensing switch includes: a substrate; a supporter on the substrate; a sensing plate that is connected to a side of the supporter and is in parallel with the substrate by a predetermined distance; a receptor binding region on an upper surface of an end portion of the sensing plate; an electric or magnetic field generation device that induces deflection of the sensing plate when a receptor bound to the receptor binding region is selectively bound to an electrically or magnetically active ligand; and a pair of switching electrodes that are separated by a predetermined distance and is connected when the sensing plate contacts the substrate due to the deflection of the sensing plate. A target material need not be labelled, a signal processing of a fluorescent or electrical detection signal using an analysis apparatus is not required, and a signal can be directly decoded by confirming whether a current flows through the switch.
    Type: Grant
    Filed: November 17, 2008
    Date of Patent: September 7, 2010
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Kyu-tae Yoo, Joon-ho Kim, Jun-hong Min, Sung-ouk Jung, Ji-na Namgoong, Kui-hyun Kim, Jeo-young Shim, Kak Namkoong
  • Publication number: 20100181209
    Abstract: Provided is a method of sensing biomolecules using a bioFET, the method including: forming a layer including Au on a gate of the bioFET; forming a probe immobilized on a substrate separated from the gate by a predetermined distance, and a biomolecule having a thiol group (—SH) which is incompletely bonded to the probe; reacting the probe with a sample including a target molecule; and measuring a current flowing in a channel region between a source and a drain of the bioFET.
    Type: Application
    Filed: December 14, 2009
    Publication date: July 22, 2010
    Applicant: SAMSUNG ELECTRONICS CO. LTD.
    Inventors: Kyu-tae YOO, Sung-ouk JUNG, Jun-hong MIN, Ji-na NAMGOONG, Soo-hyung CHOI, Jeo-young SHIM
  • Publication number: 20100183812
    Abstract: Provided is a calibration apparatus for an optical scanner, including a substrate on which a molecule capable of forming an excimer is immobilized. A method of manufacturing the calibration apparatus and a method of calibrating an optical scanner using the calibration apparatus are also provided.
    Type: Application
    Filed: February 22, 2010
    Publication date: July 22, 2010
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Jeo-young Shim, Sung-ouk Jung, Jin-na Namgoong, Kyu-tae Yoo, Jang-seok Ma
  • Patent number: 7727622
    Abstract: Provided is a calibration apparatus for an optical scanner, including a substrate on which a molecule capable of forming an excimer is immobilized. A method of manufacturing the calibration apparatus and a method of calibrating an optical scanner using the calibration apparatus are also provided.
    Type: Grant
    Filed: January 25, 2006
    Date of Patent: June 1, 2010
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jeo-young Shim, Sung-ouk Jung, Ji-na Namgoong, Kyu-tae Yoo, Jang-seok Ma
  • Patent number: 7700290
    Abstract: A method of manufacturing a DNA (deoxyribonucleic acid) chip is provided. The DNA chip has a plurality of transistors formed on a substrate and an organic layer and a DNA probe sequentially stacked on a gate of the transistor. The method includes forming an inter-layer insulation layer on the substrate to cover the transistors, planarizing the inter-layer insulation layer, forming at least two contact holes exposing gate electrodes of the transistors in the inter-layer insulation layer, selectively forming organic layers on the exposed gate electrodes, attaching a first DFR (dry film resist) layer to the upper surface of the inter-layer insulation layer to cover the contact holes, removing a portion of the first DFR layer covering a first contact hole among the contact holes, attaching a first DNA probe to the organic layers in the first contact hole, and removing a remaining portion of the first DFR layer.
    Type: Grant
    Filed: June 30, 2006
    Date of Patent: April 20, 2010
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jeo-young Shim, Soo-suk Lee, Chin-sung Park, Kyu-youn Hwang
  • Patent number: 7695678
    Abstract: A method of isolating nucleic acid from a sample containing nucleic acid is provided. The method includes contacting the sample with a bifunctional material that contains an amino group and a carboxyl group and is positively charged at a first pH to allow binding of the nucleic acid to the bifunctional material; and extracting the nucleic acid at a second pH higher than the first pH from the complex.
    Type: Grant
    Filed: June 18, 2008
    Date of Patent: April 13, 2010
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Kyu-youn Hwang, Joon-ho Kim, Chang-eun Yoo, Hun-joo Lee, Hee-kyun Lim, Sung-yung Jeong, Jeo-young Shim
  • Patent number: 7659149
    Abstract: Provided is a method of sensing biomolecules using a bioFET, the method including: forming a layer including Au on a gate of the bioFET; forming a probe immobilized on a substrate separated from the gate by a predetermined distance, and a biomolecule having a thiol group (—SH) which is incompletely bonded to the probe; reacting the probe with a sample including a target molecule; and measuring a current flowing in a channel region between a source and a drain of the bioFET.
    Type: Grant
    Filed: February 2, 2006
    Date of Patent: February 9, 2010
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Kyu-tae Yoo, Sung-ouk Jung, Jun-hong Min, Ji-na Namgoong, Soo-hyung Choi, Jeo-young Shim
  • Publication number: 20090322354
    Abstract: A method of detecting a presence of bio-molecules, or a concentration of the target bio-molecules using a field effect transistor, includes allowing a first sample including a first target bio-molecule to contact a sensing surface of the field effect transistor and measuring a change in an electric signal of the field effect transistor, the field effect transistor including a substrate, a source region and a drain region, the source region and the drain region formed apart from each other on the substrate, the source region and the drain region each doped to having an opposite polarity than a polarity of the substrate, a channel region disposed between the source region and the drain region and an insulating layer including the sensing surface, the insulating layer disposed on the channel region.
    Type: Application
    Filed: April 3, 2007
    Publication date: December 31, 2009
    Applicant: SAMSUNG ELECTRONICS CO., LTD
    Inventors: Kyu-tae YOO, Kyu-sang LEE, Won-seok CHUNG, Jeo-young SHIM, Yeon-ja CHO