Patents by Inventor Jeong Do Yang

Jeong Do Yang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • PHASE CHANGE MEMORY DEVICE COMPRISING BISMUTH-TELLURIUM NANOWIRES
    Publication number: 20120039116
    Abstract: The present invention relates to a phase change memory device comprising bismuth-tellurium nanowires. More specifically, the bismuth-tellurium nanowires having PRAM characteristics may be prepared by using a porous nano template without any high temperature process and said nanowires may be used in the phase change memory device by using their phase change characteristics to identify memory characteristics.
    Type: Application
    Filed: January 21, 2011
    Publication date: February 16, 2012
    Inventors: Kyung Hwa YOO, Nal Ae Han, Sung In Kim, Jeong Do Yang