Abstract: An electronic device is provided.

Abstract: A non-volatile memory device includes a semiconductor substrate, a well region situated on the semiconductor substrate, a floating gate situated on the well region, a floating gate channel region, a control gate situated on both sides of the floating gate, a control gate channel region, and an ion implantation area for regulating a program threshold voltage integrally formed between an area underneath of the floating gate and the control gate and a foreside of the well region, wherein a doping concentration of the ion implantation area for regulating a program threshold voltage is greater than a doping concentration of the well region. Therefore, the non-volatile memory device of examples integrally forms an ion implantation area for regulating a program threshold voltage irrespective of a channel region of a floating gate and a control gate so as to guarantee durability of a non-volatile memory device.

Abstract: A method of operating an electronic device is provided. The method includes detecting a plurality of fingerprint drags after a touch on a portion of the electronic device, wherein each of the plurality of fingerprint drags is a consecutive drag from a previous drag and each of the plurality of fingerprint drags has a different orientation from each other; and identifying a fingerprint based on a plurality of images acquired from the plurality of fingerprint drags, wherein each of the plurality of images is compared with corresponding portion of a reference image.

Abstract: An electronic device having a fingerprint verification function is provided. The electronic device includes a display; a touch recognition sensor pattern for recognizing a touch input on the display; a fingerprint recognition sensor pattern for recognizing a fingerprint input on the display; and a processor functionally connected to the display, the touch recognition sensor pattern and the fingerprint recognition sensor pattern. The processor determines whether a fingerprint recognition mode is executed, and selectively activates the touch recognition sensor pattern and the fingerprint recognition sensor pattern according to whether the determined fingerprint recognition mode is executed.

Abstract: A non-volatile memory device and a method of manufacturing the non-volatile memory device, where the non-volatile memory device includes a floating gate insulating layer and a floating gate disposed on a substrate, a dielectric layer formed perpendicular to the floating gate insulating layer and at two sides of the floating gate, and a first control gate at a first side of the dielectric layer distal from the floating gate and a second control gate at a second side of the dielectric layer distal from the floating gate, wherein the first control gate and the second control gate are connected to each other, and a second width of the second control gate is wider than a first width of the first control gate. A length of a control gate of a non-volatile memory device may be extended to effectively preventing the generation of leakage current when a control gate is off.

Abstract: Provided is a method for authenticating a user in an electronic device. In illustrative embodiments, a fingerprint input from the user is be detected by receiving detection signals for respective sample points across an area of the fingerprint input. A determination value may be computed, which represents a degree of distribution of the detection signals according to signal strengths. It is then determined whether the determination value falls outside a preset reference range. If the determination value falls outside the preset reference range, the method determines that the fingerprint input from the user is invalid.

Abstract: A method for operating an electronic device including a sensor unit that uses infrared rays is provided. In the method, a light source is illuminated using at least one light emitting device. Whether the illuminated light source is received by a light receiving device including at least one light receiving channel is determined. A relevant function corresponding to an amount of light of the light source received by the at least one light receiving channel is performed.

Abstract: A non-volatile memory device includes a semiconductor substrate, a well region situated on the semiconductor substrate, a floating gate situated on the well region, a floating gate channel region, a control gate situated on both sides of the floating gate, a control gate channel region, and an ion implantation area for regulating a program threshold voltage integrally formed between an area underneath of the floating gate and the control gate and a foreside of the well region, wherein a doping concentration of the ion implantation area for regulating a program threshold voltage is greater than a doping concentration of the well region. Therefore, the non-volatile memory device of examples integrally forms an ion implantation area for regulating a program threshold voltage irrespective of a channel region of a floating gate and a control gate so as to guarantee durability of a non-volatile memory device.

Abstract: An electronic device is provided. The electronic device includes a first body, a second body being folded or unfolded with respect to the first body, a first sensor processor configured to detect a signal according to the folding/unfolding of the second body, a second sensor processor configured to detect a signal according to the folding/unfolding of the second body, in a position different from the first sensor, and a processor operatively connected with the first sensor and the second sensor. The processor is further configured to determine a folded/unfolded state of the second body in accordance with the detecting signals of the first sensor and second sensor.

Abstract: A nonvolatile memory cell and a method for fabricating the same can secure stable operational reliability as well as reducing a cell size. The nonvolatile memory cell includes a drain region formed in a substrate, a source region formed in the substrate to be separated from the drain region, a floating gate formed over the substrate between the drain region and the source region, a halo region formed in the substrate in a direction that the drain region is formed, a dielectric layer formed on sidewalls of the floating gate, and a control gate formed over the dielectric layer to overlap with at least one sidewall of the floating gate.

Abstract: A method is provided for operating an electronic device.

Abstract: A electronic device and method are disclosed herein. The electronic device includes a display, a fingerprint recognition sensor configured to recognize a fingerprint received through the display, and a processor. The processor is configured to implement the method, which includes detecting a fingerprint using a fingerprint recognition sensor of the electronic device through a display of the electronic device; and controlling the display to display at least one object based on the fingerprint.

Abstract: A non-volatile memory device and a method of manufacturing the non-volatile memory device, where the non-volatile memory device includes a floating gate insulating layer and a floating gate disposed on a substrate, a dielectric layer formed perpendicular to the floating gate insulating layer and at two sides of the floating gate, and a first control gate at a first side of the dielectric layer distal from the floating gate and a second control gate at a second side of the dielectric layer distal from the floating gate, wherein the first control gate and the second control gate are connected to each other, and a second width of the second control gate is wider than a first width of the first control gate. A length of a control gate of a non-volatile memory device may be extended to effectively preventing the generation of leakage current when a control gate is off.

Abstract: An electronic device and a method for controlling a gesture sensor of the same are provided. The electronic device includes a gesture sensor and a threshold determining module configured to receive a light amount measurement with respect to light incident to the gesture sensor, to compare the light amount measurement with a light amount reference value, and to determine a light amount threshold that is used based on object recognition of the gesture sensor by adding the weight value to the light amount measurement.

Abstract: A method of operating an electronic device is provided. The method includes detecting a plurality of fingerprint drags after a touch on a portion of the electronic device, wherein each of the plurality of fingerprint drags is a consecutive drag from a previous drag and each of the plurality of fingerprint drags has a different orientation from each other; and identifying a fingerprint based on a plurality of images acquired from the plurality of fingerprint drags, wherein each of the plurality of images is compared with corresponding portion of a reference image.

Abstract: A method for operating an electronic device including a sensor unit that uses infrared rays is provided. In the method, a light source is illuminated using at least one light emitting device. Whether the illuminated light source is received by a light receiving device including at least one light receiving channel is determined. A relevant function corresponding to an amount of light of the light source received by the at least one light receiving channel is performed.

Abstract: A nonvolatile memory device and a method of manufacturing thereof are provided. The method includes forming a floating gate on a substrate, forming a dielectric layer to conform to a shape of the floating gate, forming a conductive layer to form a control gate on the substrate, the control gate covering the floating gate and the dielectric layer, forming a photoresist pattern on one side of the conductive layer, forming the control gate in the form of a spacer to surround sides of the floating gate, the forming of the control gate including performing an etch-back on the conductive layer until a portion of the dielectric layer on the floating gate is exposed, and forming a poly pad, to which a plurality of contact plugs are connected, on one side of the control gate, the forming of the poly pad including removing the photoresist pattern.

Abstract: A device for repair analysis includes a selection unit and an analysis unit. The selection unit is configured to select a part of the row addresses of a plurality of spare pivot fault cells and a part of the column addresses of the spare pivot fault cells in response to a control code. The analysis unit is configured to generate an analysis signal indicating whether row addresses of a plurality of non-spare pivot fault cells are included in selected row addresses and column addresses of the non-spare pivot fault cells are included in selected column addresses.

Abstract: A device for storing error information of a memory device includes a plurality of parent memories and a plurality of child memories. Each of the parent memories stores a row address and a column address of one defective cell. Each of the child memories stores a column address of a defective cell, having a row address identical to a row address stored in the corresponding parent memory, or a row address of a defective cell, having a column address identical to a column address stored in the corresponding parent memory. Herein, each of the parent memories stores information about information about whether a row repair must be performed to repair a defective cell stored in the parent memory and information about whether a column repair must be performed to repair a defective cell stored in the parent memory.

Abstract: A nonvolatile memory device and a method of manufacturing thereof are provided. The method includes forming a floating gate on a substrate, forming a dielectric layer to conform to a shape of the floating gate, forming a conductive layer to form a control gate on the substrate, the control gate covering the floating gate and the dielectric layer, forming a photoresist pattern on one side of the conductive layer, forming the control gate in the form of a spacer to surround sides of the floating gate, the forming of the control gate including performing an etch-back on the conductive layer until a portion of the dielectric layer on the floating gate is exposed, and forming a poly pad, to which a plurality of contact plugs are connected, on one side of the control gate, the forming of the poly pad including removing the photoresist pattern.