Abstract: In a method of forming fine patterns, a photocurable coating layer is formed on a substrate. A first surface of a template makes contact with the photocurable coating layer. The first surface of the template includes at least two first patterns having a first dispersion degree of sizes, and at least one portion of the first surface of the template includes a photo attenuation member. A light is irradiated onto the photocurable coating layer through the template to form a cured coating layer including second patterns having a second dispersion degree of sizes. The second patterns are generated from the first patterns and the second dispersion degree is less than the first dispersion degree. The template is separate from the cured coating layer. A size dispersion degree of the patterns used in a nanoimprint lithography process may be adjusted by the light attenuation member, so that the fine patterns may be formed to have an improved size dispersion degree.

Abstract: A method of manufacturing a mask includes dividing an upper surface of a template having a design pattern into a plurality of regions, the template being arranged over a polymer layer on a mask substrate, correcting a distorted region among the regions, pressing the polymer layer with the template to form a mask pattern corresponding to the design pattern on the polymer layer; and curing the mask pattern.

Abstract: The energy distribution of exposure light directed passing through the slit of an exposure apparatus is determined. A photoresist layer on a substrate is exposed over a plurality of shots while changing the intensity of the exposure light for each shot. Then the photoresist layer is developed to form a sample photoresist layer. An image of the developed sample photoresist layer is analyzed for color intensity. Values of the color intensity across a selected one of the shots are correlated with values of the intensity of the exposure light to produce an energy distribution of the exposure light along the length of the slit. The energy distribution is used to change the slit so that a more desirable energy distribution may be realized when the slit is used in a process of manufacturing a semiconductor device.

Abstract: A method of measuring an overlay includes generating an original signal using first and second overlay measurement keys that are spaced apart from each other, generating a first spectrum signal by performing Fourier transform of the original signal, generating a second spectrum signal by filtering the first spectrum signal, and generating a corrected signal by performing inverse Fourier transform of the second spectrum signal.

Abstract: A method of aligning a wafer includes irradiating light onto a plurality of alignment marks of a wafer, detecting signals outputted from the alignment marks to obtain alignment position offsets, selecting a set of the alignment marks corresponding to the alignment position offsets having a same or similar distribution, and aligning the wafer based the selected alignment marks.

Abstract: A method of measuring an overlay of an object is provided. In the method, first information of a first structure may be obtained. A preliminary structure may be formed on the first structure. Second information of the preliminary structure may be obtained. The first information and the second information may be processed to obtain virtual information of a second structure that would be formed on the first structure if a process is performed on the preliminary structure. A virtual overlay between the first structure and the second structure may be measured using the virtual information.

Abstract: An exposure apparatus and an exposing method using the apparatus. The exposure apparatus includes a photomask having a plurality of optical sources attached to a substrate.

Abstract: The present invention relates to a method of detecting the presence of a transmission signal of a transmitter in a reception signal in a wireless communication system based on CR technology.

Abstract: A nano imprint apparatus comprising: a nano imprint template; and a deformation correction unit arranged on the nano imprint template to correct deformation of the nano imprint template.

Abstract: A method for characterizing a surface of a sample object, the method including dividing the surface into pixels which are characterized by a parameter variation, and defining blocks of the surface as respective groups of the pixels. The method further includes irradiating the pixels in multiple scans over the surface with radiation having different, respective types of polarization, and detecting returning radiation from the pixels in response to each of the scans. For each scan, respective block signatures of the blocks are constructed, in response to the returning radiation from the group of pixels in each block. Also for each scan, a block signature variation using the respective block signatures of the blocks is determined. In response to the block signature variation, one or more of the types of polarization for use in subsequent examination of a test object are selected.

Abstract: Photolithography masks include an optically transparent substrate having a plurality of fiducial position aligning marks on sidewalls thereof. A reflective layer is also provided on an upper surface of the optically transparent substrate. The reflective layer includes a composite of a lower reflective layer of a first material and an upper reflective layer of a second material different from the first material, on the lower reflective layer. The lower reflective layer may include molybdenum and the upper reflective layer may include silicon. An anti-reflective layer is provided on the reflective layer.

Abstract: Provided are a reflective reticle chuck, a reflective illumination system including the chuck, a method of controlling the flatness of a reflective reticle using the chuck, and a method of manufacturing a semiconductor device using the chuck. The reflective reticle chuck includes a fixed portion and a mobile portion that together provide a securing surface for the reflective reticle. The mobile portion may alter a height of the securing surface relative to the fixed portion.

Abstract: Methods and apparatus are disclosed that arrange mask patterns in response to the contribution of a second pattern to image intensity. In some methods of arranging mask patterns, a distribution of functions h(??x) is obtained which represents the contribution of a second pattern to image intensity on a first pattern. Neighboring regions of the first pattern are discretized into finite regions, and the distribution of the functions h(??x) is replaced with representative values h(x,?) of the discretized regions. A position of the second pattern is determined using polygonal regions having the same h(x,?). As described, the term x is the position of the first pattern and the term ? is the position of the assist.

Abstract: Provided are a method of measuring focal variations of a photolithography apparatus and a method of fabricating a semiconductor device using the method. The method of measuring the focal variations of the photolithography apparatus includes loading a photomask and a wafer into the photolithography apparatus. The photomask has an optical pattern, and the wafer has a photoresist layer on a top surface thereof. An image of the optical pattern is transferred to the photoresist layer using ultraviolet (UV) light. The photoresist layer is baked. The photoresist layer is inspected. Inspection results of the photoresist layer are analyzed. The inspection of the photoresist layer includes irradiating light for measurement to the entire surface of the wafer. Light reflected and diffracted by the wafer is collected to form an optical image. The analysis of the inspection results of the photoresist layer includes analyzing optical information on the optical image.

Abstract: A method of inspecting a structure. The method includes preparing preliminary spectrums of reference diffraction intensities according to critical dimensions of reference structures, obtaining a linear spectrum from the preliminary spectrums in a set critical dimension range, radiating light to respective measurement structures formed on a substrate, measuring measurement diffraction intensities of the light diffracted by the measurement structures, and obtaining respective critical dimensions of the measurement structures from the measurement diffraction intensities using the linear spectrum.

Abstract: Nanoimprint lithography templates and methods of fabricating semiconductor devices using the nanoimprint lithography templates are provided. The nanoimprint lithography template includes a transparent substrate having a first refractive index, a stamp pattern on a surface on the transparent substrate and having inclined sidewalls, and a coating layer formed on the inclined sidewalls of the stamp pattern, the coating layer having a second refractive index higher than the first refractive index.

Abstract: In a method of forming fine patterns, a photocurable coating layer is formed on a substrate. A first surface of a template makes contact with the photocurable coating layer. The first surface of the template includes at least two first patterns having a first dispersion degree of sizes, and at least one portion of the first surface of the template includes a photo attenuation member. A light is irradiated onto the photocurable coating layer through the template to form a cured coating layer including second patterns having a second dispersion degree of sizes. The second patterns are generated from the first patterns and the second dispersion degree is less than the first dispersion degree. The template is separate from the cured coating layer. A size dispersion degree of the patterns used in a nanoimprint lithography process may be adjusted by the light attenuation member, so that the fine patterns may be formed to have an improved size dispersion degree.

Abstract: A method of detecting reticle error may include using an optical source of an exposure unit to cause light to be incident on a reticle installed in the exposure unit, and detecting the reticle error using only 0th diffraction light from among diffraction lights transmitted through the reticle. A method of detecting reticle error may include: installing a reticle, including a mask substrate and mask patterns having a critical dimension formed on the mask substrate, in an exposure unit to cause light to be incident on the reticle; exposing a photoresist film disposed on a wafer in the exposure unit using only 0th diffraction light from among diffraction lights transmitted through the reticle; developing the exposed photoresist film; and analyzing a thickness change, an image, or the thickness change and image of the developed photoresist film, in order to detect the reticle error at a wafer level.

Abstract: A method for characterizing a surface of a sample object, the method including dividing the surface into pixels which are characterized by a parameter variation, and defining blocks of the surface as respective groups of the pixels. The method further includes irradiating the pixels in multiple scans over the surface with radiation having different, respective types of polarization, and detecting returning radiation from the pixels in response to each of the scans. For each scan, respective block signatures of the blocks are constructed, in response to the returning radiation from the group of pixels in each block. Also for each scan, a block signature variation using the respective block signatures of the blocks is determined. In response to the block signature variation, one or more of the types of polarization for use in subsequent examination of a test object are selected.