Abstract: An integrated circuit device includes gate structures arranged on an upper surface of a substrate, a first impurity region arranged at the upper surface of the substrate, wherein the first impurity region is adjacent to a first gate structure of the gate structures, a first contact pad arranged on the upper surface of the substrate, wherein the first contact pad comprises a recess recessed in a vertical direction perpendicular to the upper surface of the substrate from an upper surface of the first contact pad toward the upper surface of the substrate, a metal silicide layer disposed in the recess, and a contact via connected to the metal silicide layer and extending in the vertical direction. A lower end of the contact via is disposed in the recess and connected to the metal silicide layer. The contact via is spaced apart from the substrate in the vertical direction.

Abstract: A chemical mechanical polishing apparatus includes an inner platen to support an inner polishing pad, aan annular outer platen to support an outer polishing pad, a carrier head to hold a substrate, a first motor to rotate the inner platen about a vertical axis at a first rotation rate, and a second motor to rotate the outer platen about the vertical axis at a second rotation rate. The outer polishing pad coaxially surrounds the inner platen, and an outer edge of the inner platen and an inner edge of the outer platen are separated by a gap.

Abstract: A method of fabrication of a substrate includes, after deposition of an outer layer on a substrate and before polishing of an exposed surface of the outer layer of the substrate, performing a hydroblasting treatment of a selected portion of the exposed surface by directing a treatment liquid from a nozzle at a sufficiently high velocity onto the selected portion to remove material from the selected portion such that a thickness non-uniformity of the outer layer is reduced. Then the outer layer of the treated substrate is subject to chemical mechanical polishing to planarize and reduce a thickness of the outer layer.

Abstract: A chemical mechanical polishing apparatus includes: an inner platen to support an inner polishing pad; an annular outer platen to support an outer polishing pad; a carrier head to hold a substrate; one or more motors to rotate the inner platen about a vertical axis at a first rotation rate and to rotate the outer platen about the vertical axis at a second rotation rate; and a controller configured to select values for multiple control parameters to minimize a difference between a target removal profile and an expected removal profile, the multiple control parameters including a first parameter representing a difference in rotational speeds between the inner and outer platens. The outer polishing pad can coaxially surround the inner platen, and an outer edge of the inner platen and an inner edge of the outer platen can be separated by a gap.

Abstract: Chemical mechanical polishing system and method include a substrate is loaded into a carrier head having a housing having an upper carrier body and a lower carrier body, and a membrane assembly beneath the lower carrier body. A space between the lower carrier body and the membrane assembly defines a pressurizable chamber, a distance from a sensor in the lower carrier body to the membrane assembly is measured, and pressure in the pressurizable chamber is controlled based on the measured distances to maintain a consistent total downforce on the membrane assembly as the distance between the sensor and the membrane assembly changes.

Abstract: A carrier head for chemical mechanical polishing includes a housing for attachment to a drive shaft, a membrane assembly arranged beneath the lower carrier body, and a flexure. The membrane assembly includes a membrane support and a flexible membrane secured to the membrane support to defining a plurality of pressurizable lower chambers, with the flexible membrane having a lower surface that provides a substrate mounting surface. A flexible seal forms a pressurizable upper chamber between the housing and the membrane support. The flexure connects the membrane support to the housing, and the flexure extends through the pressurizable upper chamber.

Abstract: A Chemical Mechanical Polishing (CMP) process may generally apply more pressure around a periphery of the polishing pad than at the center of the polishing pad. This may cause uneven material removal as the substrate moves along the surface of the polishing pad. Therefore, the polishing pad may include one or more recesses around a periphery of the polishing pad to relieve pressure on the substrate. The one or more recesses may be connected to channels that extend radially outward from the recesses to the edge of the polishing pad. The recesses may collect polishing slurry during the CMP process and direct the slurry into the channels. The channels may then expel the collected polishing slurry off of the polishing pad to clear the recesses.

Abstract: A chemical mechanical polishing chamber may include a platen disposed within the chemical mechanical polishing chamber, the platen configured to support a polishing pad. The chamber may also include a slurry delivery arm configured to deliver a slurry to the polishing pad during a chemical mechanical polishing process. The chamber may include an arm may include one or more brackets, mechanically attached to an internal side of the chemical mechanical polishing chamber and positioned over the platen. The chamber may include a plurality of nozzles configured to deliver a gas to the polishing pad, the plurality of nozzles mechanically attached to the one or more brackets of the arm, each of the plurality of nozzles oriented such that an air gap is disposed between adjacent nozzles of the plurality of nozzles such that air may be pulled from the air gap and propelled with the gas towards the polishing pad.

Abstract: A gate structure includes a gate electrode on a substrate, the gate electrode including a lower portion and an upper portion sequentially stacked in a first direction substantially perpendicular to an upper surface of the substrate; a spacer structure including a second spacer and a first spacer sequentially stacked in a second direction substantially parallel to the upper surface of the substrate on a sidewall of the upper portion of the gate electrode; and a gate insulation pattern on a lower surface and a sidewall of the lower portion of the gate electrode and an outer sidewall of the spacer structure; wherein a cross-section of the first spacer has a shape of an “L”, and wherein the second spacer includes a material that is configured to induce a dipole at an interface of the first spacer and the gate insulation pattern.

Abstract: A chemical mechanical polishing apparatus includes a platen to support a polishing pad, an actuator, a carrier head to hold a surface of a substrate against the polishing pad, a motor to generate relative motion between the platen and the carrier head so as to polish an overlying layer on the substrate. The platen has a central section with an upper surface and an annular flexure surrounding or surrounded by the central section and having a top surface with a first edge adjacent to and coplanar with the upper surface and a second edge farther from the central section. The actuator is arranged to bend the annular flexure along an entire circumference of the annular flexure so as to modify a vertical position of the second edge of the annular flexure relative to the central section.

Abstract: A chemical mechanical polishing system includes a first polishing station including a first platen to support a first polishing pad, a transfer station to receive a substrate from a robot, a carrier head movable on a predetermined path from the polishing station to the transfer station, a gas flow regulator having an input for a carrier gas, a liquid flow regulator having an input for a cleaning liquid, and a fluid jet cleaner at a position along the predetermined path. The fluid jet cleaner includes an atomizer nozzle including an input port coupled to the gas flow regulator, an injection port coupled to the liquid flow regulator, and an output port positioned to spray the cleaning liquid entrained in the carrier gas onto the substrate held by the carrier head when the carrier head is located above the fluid jet cleaner.

Abstract: Embodiments of the disclosure provided for a pad conditioner with multiple disks for chemical mechanical polishing. The pad conditioner includes a bearing ring connected to a lower portion of a shaft, an outer disk assembly connected to the lower portion of the shaft, the outer disk assembly, an outer disk flexure, a plurality of outer disks disposed on a bottom surface of the outer disk, and an inner disk assembly. Alternatively, the outer disk assembly includes a plurality of outer disk holders, an outer disk connector connecting the plurality of outer disk holders, and a plurality of outer disks disposed on a bottom surface of the outer disk holders. The inner disk assembly includes a flexure connected to the outer disk assembly, the inner disk assembly, and the shaft. The pad conditioner may include a spherical bearing assembly coupled to a lower portion of the shaft.

Abstract: A chemical mechanical polishing system includes a platen to support a polishing pad, a carrier head to hold a substrate in contact with the polishing pad, a motor to generate relative motion, a steam generator, and an arm extending over the platen with and at least one opening to deliver steam from the steam generator onto the polishing pad. The steam generator includes a canister, a barrier in the canister dividing the canister into a lower chamber having a water inlet and an upper chamber having a steam outlet, a heating element configured to apply heat to a portion of lower chamber, and a nucleation surface positioned in the lower chamber. The barrier has apertures for steam to pass from the lower chamber to the upper chamber and allows for condensation to pass from the upper chamber to the lower chamber.

Abstract: Some implementations of a retaining ring has an inner surface having a first portion formed of multiple planar facets and a second portion that adjoins the first portion along a boundary and includes a frustoconical surface that is sloped downwardly from outside in. Some implementations of the retaining ring have a crenellated or serpentine inner surface, and/or an inner surface with alternating region of different surface properties or different tilt angles.

Abstract: Embodiments of the disclosure provided herein include an apparatus and method for additive manufacturing a component for a semiconductor processing apparatus. The apparatus for additive manufacturing includes a printhead configured to selectively deposit layers on build the component, wherein the printhead may selectively deposit a first set of layers onto the build platform, and selectively deposit a second set of layers on the first set of layers, each of the second set of layers comprising a gap that forms a cooling channel through the component. The cooling channel is filled a filler material. A third set of layers covers the cooling channel before the channel is exposed to a liquidizing agent, wherein the liquidizing agent reacts with the filler material to produce an effluent fluid which is then drained. In other embodiments, the cooling channel may be machined into the component before being filled with the filler material.

Abstract: A method and apparatus for dispensing polishing fluids and onto a polishing pad within a chemical mechanical polishing (CMP) system are disclosed herein. In particular, embodiments herein relate to a CMP system with a first fluid delivery arm and a second fluid delivery arm disposed over the polishing pad to dispense fluid, such as a polishing fluid or water, and/or provide a vacuum pressure. The second fluid delivery arm is configured to dispense a fluid or vacuum pressure onto the polishing pad to effect the polishing rate at the edge of the substrate.

Abstract: Some implementations of a retaining ring has an inner surface having a first portion formed of multiple planar facets and a second portion that adjoins the first portion along a boundary and includes a frustoconical surface that is sloped downwardly from outside in. Some implementations of the retaining ring have a crenellated or serpentine inner surface, and/or an inner surface with alternating region of different surface properties or different tilt angles.

Abstract: Embodiments of the present disclosure generally relate to chemical mechanical polishing systems (CMP) systems and processes used in the manufacturing of electronic devices. In particular, embodiments herein relate to methods of detecting non-conforming substrate processing events during a polishing process. In one embodiment, a method of processing a substrate on a polishing system includes urging a surface of a silicon carbide substrate against a polishing pad in the presence of a polishing fluid, determining a temperature of the polishing pad using a temperature sensor that is positioned above the platen, monitoring the temperature of the polishing pad, and, if the change in polishing pad temperature reaches a threshold value, initiating a response using a controller of the polishing system.

Abstract: A retaining ring comprises a generally annular body. The body comprises a top surface, a bottom surface, an outer surface connected to the top surface at an outer top perimeter and the bottom surface at an outer bottom perimeter, and an inner surface connected to the top surface at an inner top perimeter and the bottom surface at an inner bottom perimeter. The inner surface comprises seven or more planar facets. Adjacent planar facets are connected at corners. The inner bottom perimeter comprises straight edges of the planar facets connected at the corners.

Abstract: A chemical mechanical polishing apparatus has a platen to support a polishing pad, the platen having a recess, a carrier head to hold a surface of a substrate against the polishing pad and comprising a retaining ring to retain the substrate below the carrier head, a motor to generate relative motion between the platen and the carrier head so as to polish the substrate, an in-situ acoustic monitoring system comprising an acoustic sensor arranged in the recess that receives acoustic energy from friction between the substrate and the polishing pad and from friction between the retaining ring and the polishing pad, and a controller configured to generate a value for a carrier head status parameter based on received acoustic signals from the in-situ acoustic monitoring system, and change or polishing parameter or generate an alert based on the carrier head status parameter.