Abstract: Provided is a caffeoylalphaneoendrophin peptide derivative, and use thereof, as an anti-itching agent and an anti-atopic agent. More specifically, provided is a caffeoyl endorphin peptide derivative, which is applicable in a cosmetic material for anti-inflammatory use, such as for an atopic dermatitis treatment, and the like. The caffeoyl endorphin peptide derivative is safe for skin, has resistance to degradation by peptidases, and the like, and also has an excellent stability with respect to temperature change, and the like.

Abstract: A semiconductor memory device is capable of performing a test operation in its various operation modes. Particularly, the semiconductor memory device can enter a test mode in other modes, as well as, an all bank pre-charge mode. The semiconductor memory device includes a test mode control block configured to generate a test signal enabled for a predetermined interval in an active mode, and a mode register set control block configured to enable a mode register set signal for a test operation in the predetermined interval in response to the test signal.

Abstract: A power generation system includes a compression unit which compresses a gas, a storage which stores the compressed gas output from the compression unit, a first expansion unit which generates first power and outputs a first exhaust gas, a heating unit which heats at least the stored gas output from the storage, a second expansion unit which generates second power and outputs a second exhaust gas, a first regenerator which performs a first heat exchange between the second exhaust gas and the stored gas output from the storage, to generate a first heat exchange gas used to generate the first power and a first regenerator gas, and a second regenerator which performs a second heat exchange between the first exhaust gas and the first regenerator gas to generate a second heat exchange gas used to generate the second power after heated at the heating unit.

Abstract: A voltage stabilization circuit of a semiconductor memory apparatus includes an operation speed detecting unit configured to detect an operation speed of the semiconductor memory apparatus to generate a detection signal, and a voltage line controlling unit configured to interconnect a first voltage line and a second voltage line in response to the detection signal.

Abstract: An integrated circuit includes: a reference voltage generation unit configured to be driven in response to an enable signal, select one of a plurality of reference voltages generated by dividing a power supply voltage as an input reference voltage, and output the input reference voltage; and a reference voltage level compensation unit configured to be driven in response to the enable signal and change a level of the input reference voltage by an amount of change in a level of an external voltage.

Abstract: A method of testing a semiconductor memory apparatus is provided. The data alignment units other than the one data align unit being tested are deactivated. Serial data is input to the activated data alignment unit to generate parallel data. The parallel data is decoded. A test mode signal corresponding to the decoded result is enabled to perform the test. Different serial data is input where the test mode signal is enabled to generate and decode parallel data. Both tests are then performed simultaneously based on a test mode signal corresponding to a result of the decoded parallel data.

Abstract: A method of testing a semiconductor memory device comprises receiving a clock, addresses, commands, and data from a test device through channels, generating an internal bank address in response to the addresses and the commands, performing a multi-bit parallel test for each of a plurality of banks based on the addresses, the commands, the data, and the internal bank address, and providing the test device with a test result signal.

Abstract: A method for conducting reference voltage training includes setting levels of a reference voltage in response to code signals and receiving and storing data for the respective levels of the reference voltage, and simultaneously outputting the stored data.

Abstract: A method and an apparatus to convert a multimedia file name. The method can include: if a generation time information based file name conversion request for at least one multimedia file stored in a storage medium is received, then listing original files comprising generation time information of the at least one multimedia file stored in the storage medium; analyzing a directory which stores the listed original files to rearrange the original files based on the generation time information of the at least one multimedia file; and converting file names of the rearranged original files into generation time information based file names.

Abstract: A semiconductor apparatus includes a comparison voltage generation unit configured to generate a plurality of different comparison voltages, a reference voltage generation unit configured to receive a generation code from an external system, select one of the plurality of the different comparison voltages according to the generation code, and generate a reference voltage, and a reference voltage determination unit configured to receive the generation code and an expected reference voltage from the external system, check whether a level of the expected reference voltage is in a target range, and output a check result to the external system.

Abstract: A semiconductor memory apparatus according to the embodiment includes a test mode controller, a first data alignment unit, a decoder, a test executing unit and a second data alignment unit. The test mode controller is configured to generate test enable signals in response to a test mode setting signal and a read command. The first data alignment unit is configured to parallely align first input data that are input in series, generate first alignment data, and transmit it to the first data driver. The decoder is configured to decode the first alignment data in response to the test enable signal and generate the decoding signal. The test executing unit is configured to execute the preset test mode in response to the decoding signal. The second data alignment unit is configured to parallely align second input data, which are input in series, in response to the test enable signal, generate second alignment data, and transmit it to a second data driver.

Abstract: A data output circuit of a semiconductor memory apparatus includes: a data control driver configured to drive rising data and falling data to output control rising data and control falling data or drive level data to output the control rising data and the control falling data, in response to an output level test signal; a DLL clock control unit configured to drive a rising clock and a falling clock to output a control rising clock and a control falling clock in response to an enable signal and the output level test signal; and a clock synchronization unit configured to synchronize the control rising data and the control falling data with the control rising clock and the control falling clock to output serial rising data and serial falling data.

Abstract: An integrated circuit includes a reference voltage level setting circuit and a reference voltage generation circuit. The reference voltage level setting circuit is configured to set a level of an input reference voltage to a preset level in a power-up period or a self-refresh mode. The reference voltage generation circuit is configured to select one of a plurality of reference voltages and output the selected reference voltage as the input reference voltage when the power-up period is ended and an operation mode is not in the self-refresh mode.

Abstract: An apparatus for testing setup/hold time includes a plurality of data input units, each configured to calibrate setup/hold time of input data in response to selection signals and setup/hold calibration signals, and an off-chip driver calibration unit configured to generate the selection signals and the setup/hold calibration signals by using the input data input of one of the plurality of data input units.

Abstract: A voltage stabilization circuit of a semiconductor memory apparatus includes an operation speed detecting unit configured to detect an operation speed of the semiconductor memory apparatus to generate a detection signal, and a voltage line controlling unit configured to interconnect a first voltage line and a second voltage line in response to the detection signal.

Abstract: A voltage stabilization circuit of a semiconductor memory apparatus includes an operation speed detecting unit configured to detect an operation speed of the semiconductor memory apparatus to generate a detection signal, and a voltage line controlling unit configured to interconnect a first voltage line and a second voltage line in response to the detection signal.

Abstract: A method for converting a sink device and an apparatus for providing a content using the same are provided. The method for converting the sink device includes receiving a sink device conversion command from a first sink device, transmitting the content to a second sink device if a conversion approval of the sink device is received from the second sink device, and transmitting a control authority related to a content provision from the first sink device to the second sink device.

Abstract: A semiconductor memory device is capable of performing a test operation in its various operation modes. Particularly, the semiconductor memory device can enter a test mode in other modes, as well as, an all bank pre-charge mode. The semiconductor memory device includes a test mode control block configured to generate a test signal enabled for a predetermined interval in an active mode, and a mode register set control block configured to enable a mode register set signal for a test operation in the predetermined interval in response to the test signal.