Patents by Inventor Jeong-Hwan Kim
Jeong-Hwan Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11963439Abstract: The present disclosure relates to an organic electroluminescent compound and an organic electroluminescent device comprising the same. By comprising the compound according to the present disclosure, it is possible to produce an organic electroluminescent device having improved driving voltage, power efficiency, and/or lifetime properties compared to the conventional organic electroluminescent devices.Type: GrantFiled: August 24, 2022Date of Patent: April 16, 2024Assignee: Rohm and Haas Electronic Materials Korea Ltd.Inventors: Eun-Joung Choi, Young-Kwang Kim, Su-Hyun Lee, So-Young Jung, YeJin Jeon, Hong-Se Oh, Dong-Hyung Lee, Jin-Man Kim, Hyun-Woo Kang, Mi-Ja Lee, Hee-Ryong Kang, Hyo-Nim Shin, Jeong-Hwan Jeon, Sang-Hee Cho
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Publication number: 20240118028Abstract: An infrared heat source module is configured to minimize problems such as wrinkles or cracks in electrodes even if the patterns of a coated part and an uncoated part of the electrodes present in a current collector vary. The module improves a drying efficiency of the coated part of the current collector. An electrode using the infrared heat source module is manufactured by a process.Type: ApplicationFiled: January 27, 2022Publication date: April 11, 2024Applicant: LG Energy Solution, Ltd.Inventors: Soon Sik Choi, Young Kuk Ko, Oh Cheol Kwon, Ji Hwan Kim, Jeong Won Lee
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Patent number: 11953958Abstract: A display includes: a display panel; and a panel bottom sheet disposed below the display panel, the panel bottom sheet including: a first heat dissipation layer; a second heat dissipation layer over the first heat dissipation layer, including a first opening formed completely through the second heat dissipation layer in a thickness direction; a heat dissipation coupling interlayer between the first heat dissipation layer and the second heat dissipation layer, and a heat dissipation substrate on the second heat dissipation layer.Type: GrantFiled: December 12, 2022Date of Patent: April 9, 2024Assignee: Samsung Display Co., Ltd.Inventors: Kang Woo Lee, Boo Kan Ki, June Hyoung Park, Sun Hee Oh, Dong Hyeon Lee, Jeong In Lee, Hyuk Hwan Kim, Seong Sik Choi
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Publication number: 20240112718Abstract: An electronic device includes a target address generation circuit configured to generate a counting signal by counting the number of times each logic level combination of an address is input by performing an internal read operation and an internal write operation during an active operation, configured to store the counting signal as the storage counting signal when the counting signal is counted more than a storage counting signal that is stored therein, and configured to store the address, corresponding to the counting signal, as a target address; and a refresh control circuit configured to control a smart refresh operation on the target address.Type: ApplicationFiled: December 11, 2023Publication date: April 4, 2024Applicant: SK hynix Inc.Inventors: Jeong Jin HWANG, Sung Nyou YU, Duck Hwa HONG, Sang Ah HYUN, Soo Hwan KIM
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Patent number: 11940636Abstract: The present disclosure relates to a decoration member comprising: a color expression layer comprising a light reflection layer and a light absorption layer provided on the light reflection layer; and a substrate provided on one surface of the color expression layer, in which the light absorption layer comprises a copper nickel oxide (CuaNibOx).Type: GrantFiled: June 14, 2019Date of Patent: March 26, 2024Assignee: LG Chem, Ltd.Inventors: Yong Chan Kim, Ki Hwan Kim, Nansra Heo, Jeong Woo Shon, Pilsung Jo
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Publication number: 20240093399Abstract: Provided is a method for electrowinning neodymium compound. The method includes providing a fluoride-based electrolyte through an opening defined in an electrolytic bath including a cathode and an anode. The method includes providing granules, each including a neodymium compound and having at least one cavity defined therein, through the opening defined in the electrolytic bath. The method includes dissolving at least a portion of the granule in a molten salt of the fluoride-based electrolyte. The method also includes reducing neodymium at the cathode. The cavity is defined inside or on the surface of the granule, and the apparent density of the granules is lower than the density of the molten salt. The method proposed has an improved process compared to those of the related art.Type: ApplicationFiled: September 6, 2022Publication date: March 21, 2024Inventors: Hong Youl RYU, Hwa Young WOO, Vladislav RI, Ju Hwan SONG, Jeong Mo KIM
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Patent number: 11935751Abstract: Exemplary deposition methods may include delivering a boron-containing precursor and a nitrogen-containing precursor to a processing region of a semiconductor processing chamber. The methods may include providing a hydrogen-containing precursor with the boron-containing precursor and the nitrogen-containing precursor. A flow rate ratio of the hydrogen-containing precursor to either of the boron-containing precursor or the nitrogen-containing precursor may be greater than or about 2:1. The methods may include forming a plasma of all precursors within the processing region of the semiconductor processing chamber. The methods may include depositing a boron-and-nitrogen material on a substrate disposed within the processing region of the semiconductor processing chamber.Type: GrantFiled: May 25, 2021Date of Patent: March 19, 2024Assignee: Applied Materials, Inc.Inventors: Siyu Zhu, Chuanxi Yang, Hang Yu, Deenesh Padhi, Yeonju Kwak, Jeong Hwan Kim, Qian Fu, Xiawan Yang
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Patent number: 11925920Abstract: The present invention relates to a catalyst for hydrogenation of an aromatic compound, which is capable of greatly reducing the inactivation of a catalyst by using a support including a magnesium-based spinel structure, and a preparation method therefor.Type: GrantFiled: October 16, 2018Date of Patent: March 12, 2024Assignee: HANWHA CHEMICAL CORPORATIONInventors: Eung Gyu Kim, Won Yong Kim, Jeong Hwan Chun, Young Jin Cho, Joung Woo Han, Hyo Suk Kim, Wan Jae Myeong, Ki Taeg Jung
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Patent number: 11923124Abstract: A coil component includes a body having one surface, and one end surface and the other end surface, respectively connected to the one surface and opposing each other, a support substrate embedded in the body, and a coil portion disposed on the support substrate and including first and second lead-out patterns respectively exposed from surfaces of the body. The first lead-out pattern is exposed from the one surface of the body and the one end surface of the body. The second lead-out pattern is exposed from the one surface of the body and the other end surface of the body. The body includes an anchor portion disposed in each of the first and second lead-out patterns.Type: GrantFiled: August 2, 2019Date of Patent: March 5, 2024Assignee: SAMSUNG ELECTRO-MECHANICS CO., LTD.Inventors: Ju Hwan Yang, Jae Hun Kim, Joung Gul Ryu, Byung Soo Kang, Byeong Cheol Moon, Jeong Gu Yeo
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Patent number: 11923426Abstract: A semiconductor device capable of improving a device performance and a reliability is provided. The semiconductor device comprising a gate structure including a gate electrode on a substrate, a source/drain pattern on a side face of the gate electrode, on the substrate and, a source/drain contact connected to the source/drain pattern, on the source/drain pattern, a gate contact connected to the gate electrode, on the gate electrode, and a wiring structure connected to the source/drain contact and the gate contact, on the source/drain contact and the gate contact, wherein the wiring structure includes a first via plug, a second via plug, and a wiring line connected to the first via plug and the second via plug, the first via plug has a single conductive film structure, and the second via plug includes a lower via filling film, and an upper via filling film on the lower via filling film.Type: GrantFiled: July 6, 2021Date of Patent: March 5, 2024Assignee: Samsung Electronics Co., Ltd.Inventors: Ji Won Kang, Tae-Yeol Kim, Jeong Ik Kim, Rak Hwan Kim, Jun Ki Park, Chung Hwan Shin
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Publication number: 20240073740Abstract: There is provided a method of a terminal for performing task offloading with at least one satellite in an MEC network. The method includes the steps of: acquiring at least one initial input value; acquiring information needed for determining whether or not to perform task offloading, from the at least one satellite in time slot t; setting an object function according to whether or not to perform task offloading on the basis of information on the terminal and the information needed for determining whether or not to perform task offloading acquired from the at least one satellite in time slot t; acquiring a minimum value of each object function according to whether or not to perform task offloading, and comparing the minimum value of each object function; and determining whether or not to perform task offloading to the at least one satellite in time slot t according to a result of the comparison.Type: ApplicationFiled: August 4, 2023Publication date: February 29, 2024Inventors: Jeong Hwan KIM, Jeong Ho KWAK, Tae Yeoun KIM, Dong Ho HAM
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Publication number: 20240068623Abstract: A solenoid valve for a high-pressure container of the present invention comprises: a body portion; a valve seat which is installed on the lower portion of the body portion and has a discharge port through which a raw material gas is discharged; a coil to which electric power is applied; a core installed on the inner surface of the body portion; a lower plunger; an upper plunger; an operating rod arranged in the upper plunger; a spring arranged between the core and the operating rod; and a ball member of a spherical shape which is in contact with the lower surface of the operating rod and is seated on a seating portion formed on the lower side of the upper plunger to open/close an orifice. Thus, the hermetic state can be maintained at low pressure, and leakage in the low-pressure state can be prevented.Type: ApplicationFiled: March 23, 2022Publication date: February 29, 2024Inventors: JEONG HWAN KANG, SEONG JU KIM
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Publication number: 20240067770Abstract: A polythiol composition according to exemplary embodiments includes: a polythiol-based compound; and a benzyl halide-based reaction regulator in an amount of 10 ppm to 2,000 ppm based on a weight of the polythiol-based compound. The reaction rate of the polythiol-based compound and an isocyanate-based compound may be controlled through the reaction regulator to inhibit a generation of stria phenomenon.Type: ApplicationFiled: September 2, 2021Publication date: February 29, 2024Inventors: Jae Young PAI, Jung Hwan MYUNG, Jeong Moo KIM, Hyuk Hee HAN, Kyeong Hwan YOU
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Patent number: 11903254Abstract: A display device includes: a base substrate having a display region including a first region and a second region, and a non-display region; a first semiconductor layer including polysilicon at the second region; a first conductive layer on a first insulating layer, and including a bottom gate electrode at the first region and a second-first gate electrode at the second region; a second semiconductor layer including an oxide on a second insulating layer at the first region; a second conductive layer on a third insulating layer, and including a top gate electrode at the first region and a second-second gate electrode at the second region; and a third conductive layer on a fourth insulating layer, and including a first source electrode and a first drain electrode connected to the second semiconductor layer, and a second source electrode and a second drain electrode connected to the first semiconductor layer.Type: GrantFiled: May 6, 2022Date of Patent: February 13, 2024Assignee: Samsung Display Co., Ltd.Inventors: Ji Eun Choi, Deok Hoi Kim, Jeong Hwan Kim, Jong Baek Seon, Jun Cheol Shin, Jae Hak Lee
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Publication number: 20240013821Abstract: Provided herein may be a nonvolatile semiconductor memory device. The nonvolatile semiconductor memory device may include a memory cell array, a read and write circuit, and a control logic. The memory cell array may include a plurality of nonvolatile memory cells. The read and write circuit may be configured to perform a program operation or a read operation on nonvolatile memory cells that are selected from among the plurality of nonvolatile memory cells. The control logic may be configured to control an operation of the read and write circuit. The read and write circuit may include at least one capacitor configured to store bit data.Type: ApplicationFiled: December 2, 2022Publication date: January 11, 2024Applicant: SK hynix Inc.Inventors: Won Jae CHOI, Jeong Hwan KIM, Moon Soo SUNG
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Publication number: 20240014039Abstract: Exemplary semiconductor processing methods may include providing an oxygen-containing precursor to a processing region of a semiconductor processing chamber. The methods may include forming a plasma of the oxygen-containing precursor to produce oxygen-containing plasma effluents. The methods may include contacting a substrate housed in the processing region with the oxygen-containing plasma effluents. The substrate may include a boron-and-nitrogen-containing material overlying a carbon-containing material. The boron-and-nitrogen-containing material comprises a plurality of openings. The methods may include etching the carbon-containing material.Type: ApplicationFiled: July 11, 2022Publication date: January 11, 2024Applicant: Applied Materials, Inc.Inventors: Jeong Hwan Kim, Yeonju Kwak, Qian Fu, Siyu Zhu, Chuanxi Yang, Hang Yu
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Publication number: 20230395424Abstract: A method of manufacturing a semiconductor device is provided. The method may include forming a stack, forming a preliminary stepped structure by patterning the stack, forming a first stepped structure, a second stepped structure, and an opening located between the first stepped structure and the second stepped structure by etching the preliminary stepped structure, forming a passivation layer that fills the opening and covers the first stepped structure, and forming a third stepped structure by etching the second stepped structure using the passivation layer as an etching barrier.Type: ApplicationFiled: August 15, 2023Publication date: December 7, 2023Applicant: SK hynix Inc.Inventors: Dong Hun LEE, Jeong Hwan KIM, Mi Seong PARK, Jung Shik JANG, Won Geun CHOI
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Publication number: 20230395495Abstract: There are provided a memory device and a manufacturing method of the memory device. The memory device includes: a stack structure including gate lines stacked to be spaced apart from each other; main plugs arranged to be spaced apart from each other; plug isolation patterns isolating the main plugs into first and second sub-plugs; and a select isolation pattern isolating at least one gate line located between the plug isolation patterns adjacent to each other.Type: ApplicationFiled: January 11, 2023Publication date: December 7, 2023Applicant: SK hynix Inc.Inventors: Won Geun CHOI, Jeong Hwan KIM, Mi Seong PARK, Jung Shik JANG
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Publication number: 20230384715Abstract: An example image forming apparatus includes a power device, a photosensitive drum, a transfer device to remove remaining toner based on a cleaning bias voltage, an optical sensor to detect remaining toner, and a processor to adjust the cleaning bias voltage based on a set offset bias voltage. The processor may change a surface potential of the photosensitive drum to a voltage of a set pattern using the power device, acquire a size ratio of a periodic component based on a frequency of a signal detected from the remaining toner using the optical sensor, and, based on the acquired size ratio of the periodic component being greater than or equal to a set size ratio, adjust the cleaning bias voltage based on an offset bias voltage corresponding to the size ratio of the periodic component and provide the adjusted cleaning bias voltage to the transfer device to remove remaining toner.Type: ApplicationFiled: June 18, 2021Publication date: November 30, 2023Applicant: Hewlett-Packard Development Company, L.P.Inventors: Jung Hun SONG, Do Geun KIM, Jeong Hwan KIM
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Patent number: D1019638Type: GrantFiled: March 24, 2021Date of Patent: March 26, 2024Assignee: Life Science Technology, Inc.Inventors: Jeong Hwan Kim, Min Joon Choi