Abstract: A semiconductor device may include a gate structure including stacked local lines and a multi-step structure, wherein the multi-step structure defines pads of the local lines, channel patterns respectively disposed over the pads, a block word line disposed over the channel patterns and extending along a profile of the multi-step structure, and first contact plugs passing through the channel patterns and respectively connecting the channel patterns and the local lines.

Abstract: Operating a selector device that controls access of a signal to a memory element may comprise applying a main operating voltage pulse and a refresh voltage pulse to the selector device. The refresh voltage pulse and main operating voltage pulse have opposite polarities. A magnitude of the main operating voltage pulse is greater than or equal to a threshold voltage for turning on the selector device, and a maximum magnitude of the refresh voltage pulse is less than the threshold voltage. The refresh voltage pulse reduces a difference between the threshold voltage and a turn-off voltage of the selector device, and may be applied immediately before or immediately after the main operating voltage pulse. An electronic circuit may include the selector device and a driving circuit for apply the pulses. A nonvolatile memory may include the driving circuit and a plurality of nonvolatile memory elements each including a selector device.

Abstract: An apparatus for estimating bio-information is disclosed. The apparatus may include: a pulse wave sensor configured to measure a pulse wave signal from an object; a force sensor configured to obtain a force signal by measuring an external force exerted onto the force sensor; and a processor configured to obtain a first input value, a second input value, and a third input value based on the pulse wave signal and the force signal, to extract a feature vector by inputting the first input value, the second input value, and the third input value into a first neural network model, and to obtain the bio-information by inputting the feature vector into a second neural network model.

Abstract: The present invention relates to a bispecific humanized single domain antibody targeting both PD-L1 and CD47, as well as uses thereof. Specifically, a humanized single domain antibody that binds bispecifically to PD-L1 and CD47, which are immune checkpoint proteins, has been developed, and its efficacy has been confirmed both in vitro and in vivo. Therefore, the bispecific humanized single domain antibody can be effectively used as an immune checkpoint inhibitor for immuno-oncology therapy.

Abstract: A method is provided including: displaying a first content; detecting, by an electronic device, an output condition; and in response to the output condition, outputting, by the electronic device, a second content that that is associated with the first content. Furthermore, an electronic device is provided including: a memory configured to store content; and a processor configured to: display a first content; detect, by an electronic device, an output condition; and in response to the output condition, output a second content that that is associated with the first content.

Abstract: An apparatus for controlling a flow rate of water based on an oxygen consumption of a farming target fish is disclosed. The apparatus can include a water temperature meter for measuring a water temperature of an aquaculture tank containing the farming target fish, an automatic feeder for supplying a fish feed to the aquaculture tank, a first oxygen concentration meter for measuring an oxygen concentration in water supplied to the aquaculture tank, a second oxygen concentration meter for measuring an oxygen concentration in water discharged from the aquaculture tank, an oxygen consumption calculator configured to calculate an oxygen consumption of the farming target fish, a water flow rate calculator configured to calculate a flow rate of water to be supplied to the aquaculture tank, and a water supply configured to supply the water to the aquaculture tank.

Abstract: A semiconductor chip includes a substrate. a device layer and an interconnection layer sequentially on the substrate, and a bonding pad on the interconnection layer. A bottom surface of the bonding pad may be located at a constant level, and a side surface of the bonding pad may have a roughened shape.

Abstract: A semiconductor includes an active pattern with a lower pattern and sheet patterns spaced apart from the lower pattern in a first direction, a source/drain pattern on the lower pattern, the source/drain pattern being in contact with the sheet patterns, and gate structures on opposite sides of the source/drain pattern, the gate structures being spaced apart from each other along a second direction and including gate electrodes that surround the sheet patterns, wherein the source/drain pattern includes a first epitaxial region having at least one of antimony and bismuth, the first epitaxial region having a bottom part in contact with the lower pattern, but not with the sheet patterns, and a thickness of the bottom part increasing and decreasing away from the gate structures in the second direction, and a second epitaxial region on the first epitaxial region, the second epitaxial region including phosphorus.

Abstract: A driving control apparatus includes a sensor device, a memory, and a controller. The driving control apparatus identifies at least one of a driving situation of an ego vehicle, driving information of the ego vehicle, or any combination thereof, using the sensor device; performs coasting control of the ego vehicle based on a first driving mode, when the at least one of the driving situation, the driving information, or the any combination thereof meets a specified condition; identifies risk information including at least one of at least one time to collision (TTC), a timegap with a forward vehicle, a relative speed to the forward vehicle, or any combination thereof; and determines whether to switch a driving mode to a second driving mode or a third driving mode including braking control, based on the result of comparing the risk information with a threshold.

Abstract: Disclosed is a device for controlling a vehicle. The device includes a memory and a controller. For example, the device identifies at least one score in association with a travel state of a host vehicle, identifies a final score using the at least one score and at least one weight respectively corresponding to the at least one score, generates a braking control signal based on the final score, and performs braking control for the host vehicle based on the braking control signal.

Abstract: A semiconductor device may include a color filter array, an optical synapse array including a plurality of light passage paths transferring light incident through the color filter array with independently controlled transmissivities, and an optical-to-digital conversion circuit converting the transferred light through the plurality of light passage paths into digital data.

Abstract: An apparatus for predicting a trajectory of a surrounding vehicle includes a storage configured to store a high definition map, a lane Selection Network (LSN), and a Trajectory Prediction Network (TPN) and a controller that extracts lane information around a target vehicle, traveling around a host vehicle, based on the high definition map, inputs the lane information around the target vehicle and previous trajectory information of the target vehicle to the LSN to detect reference lane information, and inputs the reference lane information and the previous trajectory information of the target vehicle to the TPN to acquire future trajectory information of the target vehicle.

Abstract: A device for controlling autonomous driving is introduced. A device may comprise a sensor, a memory storing instructions, and a controller operatively connected to the sensor and the memory, wherein the instructions, when executed by the controller, may cause the device to detect, based on the sensor, information associated with at least one of a first vehicle or a second vehicle, determine at least one of whether a distance between the first vehicle and the second vehicle satisfies a distance condition, or whether a travel speed of the first vehicle satisfies a speed condition; and control the first vehicle based on at least some of the information and neither the distance condition nor the speed condition being satisfied, by causing a first deceleration, or based on at least one of the distance condition or the speed condition being satisfied, by causing a second deceleration greater than the first deceleration.

Abstract: The present technology includes a memory device and a method of manufacturing the memory device. The memory device includes a memory block in which first and second connection regions and a cell region between the first and second connection regions are designated, a word line included in the memory block, a first drain selection line included in the memory block and positioned on the word line, a first drain contact contacting the first drain selection line of the first connection region, a second drain contact contacting the first drain selection line of the second connection region, and a first drain voltage supply line commonly contacting the first and second drain contacts.

Abstract: Provided is an apparatus for controlling a road wheel actuator (RWA) system, the apparatus including a sensor module configured to detect sensing data of at least one of a steering angle, rack position information, angular velocity of a steering wheel, and column torque, and a processor configured to perform a Proportional Integral Differential (PID) control logic based on the sensing data detected by the sensor module and the RWA position information fed back from the RWA system.

Abstract: A method for fabricating a semiconductor device including high-integrated memory cells may include forming a cell mold in which a plurality of mold layers are stacked, over a lower structure; forming a line-shape vertical opening in the cell mold, which is vertically oriented in a stack direction of the cell mold; forming a storage opening that horizontally extends from the line-shape vertical opening; and forming a data storage element in the storage opening.

Abstract: A smart ring for sensing a biometric signal is provided. The smart ring for sensing a biometric signal by coming in contact with the skin includes at least one light-emitting circuit including first to third light sources that respectively generate light of first to third wavelengths incident on the inside of the skin at non-overlapping first to third points in time, a switch that controls each of the at least one light-emitting circuit, first to third driving circuits that respectively control the first to third light sources of each light-emitting circuit, and a sensing circuit configured to obtain reflected light that is output from the at least one light-emitting circuit and reflected from the inside of the skin.

Abstract: A method of controlling physical properties of an electrolytic copper foil according to one embodiment of the present invention includes: controlling the physical properties of the electrolytic copper foil including elongation, tensile strength and roughness by regulating a surface glossiness of the electrolytic copper foil through addition of a surface glossiness agent. The surface glossiness is regulated within a range of 35 to 400 GU (60°).

Abstract: A semiconductor device, and a method of manufacturing the same, includes a gate stack including a plurality of conductive lines extending in a first horizontal direction, a first slit and a second slit passing through the gate stack in a vertical direction and extending in the first horizontal direction, and a plurality of cell plugs extending in the vertical direction orthogonal to the first horizontal direction in the gate stack between the first slit and the second slit. Each of the first slit and the second slit includes a first portion extending in a diagonal direction between the first horizontal direction and a second horizontal direction orthogonal to the first horizontal direction, and a second portion extending in the first horizontal direction.

Abstract: A memory device, and a method of manufacturing the same, includes a first select line including a first cell area, a second select line including a second cell area disposed in a first direction from the first cell area, a first separation pattern extending in a second direction intersecting the first direction between the first cell area and the second cell area, second separation patterns extending from both ends of the first separation pattern in the first direction and a third direction opposite the first direction, respectively, and a third separation pattern extending from at least one of the second separation patterns in the second direction, and disposed in a direction opposite the first separation pattern with respect to the at least one second separation pattern.