Abstract: A driving control apparatus includes a sensor device, a memory, and a controller. The driving control apparatus identifies at least one of a driving situation of an ego vehicle, driving information of the ego vehicle, or any combination thereof, using the sensor device; performs coasting control of the ego vehicle based on a first driving mode, when the at least one of the driving situation, the driving information, or the any combination thereof meets a specified condition; identifies risk information including at least one of at least one time to collision (TTC), a timegap with a forward vehicle, a relative speed to the forward vehicle, or any combination thereof; and determines whether to switch a driving mode to a second driving mode or a third driving mode including braking control, based on the result of comparing the risk information with a threshold.

Abstract: Disclosed is a device for controlling a vehicle. The device includes a memory and a controller. For example, the device identifies at least one score in association with a travel state of a host vehicle, identifies a final score using the at least one score and at least one weight respectively corresponding to the at least one score, generates a braking control signal based on the final score, and performs braking control for the host vehicle based on the braking control signal.

Abstract: A semiconductor device may include a color filter array, an optical synapse array including a plurality of light passage paths transferring light incident through the color filter array with independently controlled transmissivities, and an optical-to-digital conversion circuit converting the transferred light through the plurality of light passage paths into digital data.

Abstract: An apparatus for predicting a trajectory of a surrounding vehicle includes a storage configured to store a high definition map, a lane Selection Network (LSN), and a Trajectory Prediction Network (TPN) and a controller that extracts lane information around a target vehicle, traveling around a host vehicle, based on the high definition map, inputs the lane information around the target vehicle and previous trajectory information of the target vehicle to the LSN to detect reference lane information, and inputs the reference lane information and the previous trajectory information of the target vehicle to the TPN to acquire future trajectory information of the target vehicle.

Abstract: The present technology includes a memory device and a method of manufacturing the memory device. The memory device includes a memory block in which first and second connection regions and a cell region between the first and second connection regions are designated, a word line included in the memory block, a first drain selection line included in the memory block and positioned on the word line, a first drain contact contacting the first drain selection line of the first connection region, a second drain contact contacting the first drain selection line of the second connection region, and a first drain voltage supply line commonly contacting the first and second drain contacts.

Abstract: A device for controlling autonomous driving is introduced. A device may comprise a sensor, a memory storing instructions, and a controller operatively connected to the sensor and the memory, wherein the instructions, when executed by the controller, may cause the device to detect, based on the sensor, information associated with at least one of a first vehicle or a second vehicle, determine at least one of whether a distance between the first vehicle and the second vehicle satisfies a distance condition, or whether a travel speed of the first vehicle satisfies a speed condition; and control the first vehicle based on at least some of the information and neither the distance condition nor the speed condition being satisfied, by causing a first deceleration, or based on at least one of the distance condition or the speed condition being satisfied, by causing a second deceleration greater than the first deceleration.

Abstract: Provided is an apparatus for controlling a road wheel actuator (RWA) system, the apparatus including a sensor module configured to detect sensing data of at least one of a steering angle, rack position information, angular velocity of a steering wheel, and column torque, and a processor configured to perform a Proportional Integral Differential (PID) control logic based on the sensing data detected by the sensor module and the RWA position information fed back from the RWA system.

Abstract: A method for fabricating a semiconductor device including high-integrated memory cells may include forming a cell mold in which a plurality of mold layers are stacked, over a lower structure; forming a line-shape vertical opening in the cell mold, which is vertically oriented in a stack direction of the cell mold; forming a storage opening that horizontally extends from the line-shape vertical opening; and forming a data storage element in the storage opening.

Abstract: A smart ring for sensing a biometric signal is provided. The smart ring for sensing a biometric signal by coming in contact with the skin includes at least one light-emitting circuit including first to third light sources that respectively generate light of first to third wavelengths incident on the inside of the skin at non-overlapping first to third points in time, a switch that controls each of the at least one light-emitting circuit, first to third driving circuits that respectively control the first to third light sources of each light-emitting circuit, and a sensing circuit configured to obtain reflected light that is output from the at least one light-emitting circuit and reflected from the inside of the skin.

Abstract: A method of controlling physical properties of an electrolytic copper foil according to one embodiment of the present invention includes: controlling the physical properties of the electrolytic copper foil including elongation, tensile strength and roughness by regulating a surface glossiness of the electrolytic copper foil through addition of a surface glossiness agent. The surface glossiness is regulated within a range of 35 to 400 GU (60°).

Abstract: A semiconductor device, and a method of manufacturing the same, includes a gate stack including a plurality of conductive lines extending in a first horizontal direction, a first slit and a second slit passing through the gate stack in a vertical direction and extending in the first horizontal direction, and a plurality of cell plugs extending in the vertical direction orthogonal to the first horizontal direction in the gate stack between the first slit and the second slit. Each of the first slit and the second slit includes a first portion extending in a diagonal direction between the first horizontal direction and a second horizontal direction orthogonal to the first horizontal direction, and a second portion extending in the first horizontal direction.

Abstract: A memory device, and a method of manufacturing the same, includes a first select line including a first cell area, a second select line including a second cell area disposed in a first direction from the first cell area, a first separation pattern extending in a second direction intersecting the first direction between the first cell area and the second cell area, second separation patterns extending from both ends of the first separation pattern in the first direction and a third direction opposite the first direction, respectively, and a third separation pattern extending from at least one of the second separation patterns in the second direction, and disposed in a direction opposite the first separation pattern with respect to the at least one second separation pattern.

Abstract: The present discloses provides a memory device and a method of operating the memory device. The memory device includes first main plugs formed in a vertical direction over a substrate and arranged in a first direction, second main plugs, third main plugs arranged between the first and second main plugs, the third main plugs adjacent to the first and second main plugs, and bit lines above the first to third main plugs, wherein each of the first to third main plugs includes first and second sub-plugs facing each other, wherein portions of the first and second sub-plugs included in each of the first and third main plugs are coupled to different select lines, and wherein portions of the first and second sub-plugs included in each of the second and third main plugs are coupled to different select lines.

Abstract: Methods of semiconductor processing may include providing a hydrogen-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be disposed on a substrate support within the processing region. A layer of silicon-and-nitrogen-containing material may be disposed on the substrate. The methods may include forming plasma effluents of the hydrogen-containing precursor. The methods may include contacting the layer of silicon-and-nitrogen-containing material with plasma effluents of the hydrogen-containing precursor. The contacting may etch a portion of the layer of silicon-and-nitrogen-containing material.

Abstract: A method of manufacturing a semiconductor device is provided. The method may include forming a stack, forming a preliminary stepped structure by patterning the stack, forming a first stepped structure, a second stepped structure, and an opening located between the first stepped structure and the second stepped structure by etching the preliminary stepped structure, forming a passivation layer that fills the opening and covers the first stepped structure, and forming a third stepped structure by etching the second stepped structure using the passivation layer as an etching barrier.

Abstract: A memory device includes: a memory cell array including a plurality of cell plugs; a first slit isolating the memory cell array into a plurality of memory regions, the first slit extending in a first direction; and second slits penetrating the plurality of memory regions, the second slits being arranged to be spaced apart from each other in a second direction intersecting the first direction. Gate lines included in each of the plurality of memory regions may be isolated from each other by the first slit. Each gate line located in the same layer among the gate lines included in each of the plurality of memory regions may extend through a first connection region between the second slits for each corresponding memory region.

Abstract: A display device includes a substrate that includes a display area and a non-display area; a mask support that is disposed in the non-display area of the substrate; a sealant that is disposed in the non-display area of the substrate and is disposed between the mask support and the display area; an insulating layer that is disposed between the sealant and the mask support; and a plurality of grooves that are formed by removing at least a part of the insulating layer.

Abstract: A semiconductor device may include: a first gate structure including a plurality of first conductive layers that are alternately stacked with a plurality of first insulating layers; a second gate structure including a plurality of second conductive layers that are alternately stacked with a plurality of second insulating layers; a third gate structure including third conductive layers that are alternately stacked with a plurality of third insulating layers; and a first contact plug extending into the first gate structure through the third gate structure and the second gate structure, the first contact plug connected to a first of the plurality of first conductive layers, and the first contact plug including a first inflection portion located at an interface between the second gate structure and the third gate structure.

Abstract: A method for manufacturing an electrolytic copper foil according to one embodiment of the present disclosure includes: preparing an electrolyte containing copper ion and nickel ion by dissolving copper (Cu) and nickel (Ni) in sulfuric acid; and forming a copper layer by supplying an electric current to a positive plate and a negative electrode rotating drum disposed apart from each other in the electrolyte. The concentration of the nickel ion is 50 ppm to 350 ppm.

Abstract: The present discloses provides a memory device and a method of operating the memory device. The memory device includes first main plugs formed in a vertical direction over a substrate and arranged in a first direction, second main plugs, third main plugs arranged between the first and second main plugs, the third main plugs adjacent to the first and second main plugs, and bit lines above the first to third main plugs, wherein each of the first to third main plugs includes first and second sub-plugs facing each other, wherein portions of the first and second sub-plugs included in each of the first and third main plugs are coupled to different select lines, and wherein portions of the first and second sub-plugs included in each of the second and third main plugs are coupled to different select lines.