Abstract: A parallel output linear amplifier is provided that includes a transconductance amplifier configured to receive an analog input signal from an input terminal and amplify the analog input signal. The parallel output linear amplifier also includes a first pre-amplifier connected to the transconductance amplifier and operated using a floating drive voltage, and a cascode class AB amplifier connected to the first pre-amplifier and configured to provide an amplified signal to an output terminal. The parallel output linear amplifier further includes a second pre-amplifier configured connected to the transconductance amplifier and operated using the floating drive voltage, and a cascade class AB amplifier connected to the second pre-amplifier and configured to provide an amplified signal to the output terminal.

Abstract: The present invention relates to a resin for a blister package and a preparation method thereof. The resin for a blister package according to the present invention is a water-soluble resin which can minimize a hazard to a human body due to residual of a solvent, and particularly, a resin layer formed by using the resin can show an excellent heat seal property and is hardly deformed at the heat seal temperature condition.

Abstract: A programmable variable gain amplifier includes at least three amplifiers. A first amplifier is configured to amplify an input signal. A second amplifier, which includes a programmable output load stage, is configured to receive an output signal from the first amplifier and to output a first differential output signal. The output load stage includes multiple first switches and multiple first diode-connected transistors that are open-circuited or short-circuited by the first switches. A third amplifier, which includes a programmable current mirror input stage, is configured to receive the first differential output signal from the second amplifier through the current mirror input stage and to output a second differential output signal. The current mirror input stage includes multiple second switches and multiple second transistors that are open-circuited or short-circuited by the plurality of second switches.

Abstract: Disclosed are biocompatible polymeric nanoparticles for drug delivery and a method for preparing the same. They can be prepared by mixing a tri-block copolymer, PEG, and a drug at a predetermined temperature to give a homogeneous polymeric mixture; solidifying the homogeneous polymeric mixture at room temperature; and dissolving the solidified polymeric mixture in an aqueous solution. Based on a polymer melting process, the method makes it easy to produce poloxamer nanoparticles at low cost. The nanoparticles show desired particle sizes suitable for use in drug delivery and a uniform particle size distribution. Consisting of a bilayer structure, the nanoparticles can contain sparingly soluble drugs. Also, the nanoparticles contain no organic solvents and are thus safe to the body because they are free of organic solvent residuals.

Abstract: The present invention relates apparatus and method for managing addresses of network elements connected to a network. An IGD (Internet Gateway Device) of the present invention comprises a WAN device conducting gateway function of a home network or other network, and a LAN device that communicates with the WAN device and has address management information used for management of a 16-byte-long IPv6 addresses to be assigned to the element. The address management information is set or read by a command received from a remote element on the network in which a control application is running.

Abstract: A programmable variable gain amplifier includes at least three amplifiers. A first amplifier is configured to amplify an input signal. A second amplifier, which includes a programmable output load stage, is configured to receive an output signal from the first amplifier and to output a first differential output signal. The output load stage includes multiple first switches and multiple first diode-connected transistors that are open-circuited or short-circuited by the first switches. A third amplifier, which includes a programmable current mirror input stage, is configured to receive the first differential output signal from the second amplifier through the current mirror input stage and to output a second differential output signal. The current mirror input stage includes multiple second switches and multiple second transistors that are open-circuited or short-circuited by the plurality of second switches.

Abstract: An automated and integrated substrate inspecting apparatus for performing an EBR/EEW inspection, a defect inspection of patterns and reticle error inspection of a substrate includes a first stage for supporting a substrate; a first image acquisition unit for acquiring a first image of a peripheral portion of the substrate supported by the first stage; a second stage for supporting the substrate; a second image acquisition unit for acquiring a second image of the substrate supported by the second stage; a transfer robot for transferring the substrate between the first stage and the second stage; and a data processing unit, connected to the first image acquisition unit and the second image acquisition unit, for inspecting results of an edge bead removal process and an edge exposure process performed on the substrate using the first image, and for inspecting for defects of patterns formed on the substrate using the second image.

Abstract: A virtual local area network(VLAN) data switching method uses an address resolution protocol(ARP) packet in VLAN constructed with one internet protocol(IP) subnet. This is achieved by making a source host broadcast an ARP request packet, making a Proxy ARP server prepare to transmit a virtual ARP request packet wherein the Proxy ARP server receives the ARP request packet, and making a destination host transmit an ARP response packet in direct to the source host through a switching unit wherein the destination host receives the virtual ARP request packet. Data transfer delay time for the data exchanged between different VLANs as well as the router load occurring in handling the traffic between VLANs are reduced, so that data handling performance for high-capacity multimedia data transferred on VLANs is improved.

Abstract: A method of measuring a concentration of dopants of an objective thin film includes measuring a concentration of dopants of a first wafer, forming the objective thin film on the first wafer to form a second wafer, measuring a concentration of dopants of the second wafer, and obtaining the concentration of dopants of the objective thin film by subtracting the concentration of dopants of the first wafer from the concentration of dopants of the second wafer. Therefore, the concentration of dopants of the objective thin film may be measured without the use of a criterion wafer, thereby reducing measuring time. Also, the concentration of dopants of the objective thin film may be easily controlled, and therefore promptly corrected if necessary.

Abstract: A method for supporting a global IP telephony system in an NAT-based private network is disclosed. The disclosed method includes: establishing a special channel for exchanging information for address translation with a NAT router and identifying the type of a dynamic NAT mode of the NAT router using the special channel. A private address contained in a signaling message forwarded to a public IP terminal is transmitted to the NAT router using the special channel, according to the type of the dynamic NAT mode. A public address is dynamically assigned for the private address by the NAT router and used to replace the private address in a regenerated signaling message. The regenerated signaling message is then transmitted to the public IP terminal. The public address assigned by the NAT router is released when a call is terminated. Since the information required in each H.

Abstract: A method of measuring a concentration of dopants of an objective thin film includes measuring a concentration of dopants of a first wafer, forming the objective thin film on the first wafer to form a second wafer, measuring a concentration of dopants of the second wafer, and obtaining the concentration of dopants of the objective thin film by subtracting the concentration of dopants of the first wafer from the concentration of dopants of the second wafer. Therefore, the concentration of dopants of the objective thin film may be measured without the use of a criterion wafer, thereby reducing measuring time. Also, the concentration of dopants of the objective thin film may be easily controlled, and therefore promptly corrected if necessary.

Abstract: A method of measuring a concentration of a material includes irradiating an infrared light onto a substrate having a layer including a first material and dopants, wherein the infrared light is partially absorbed by and partially transmitted through the substrate including the layer. Intensities of the infrared light absorbed in the first material and the dopants are computed according to light wave numbers by utilizing a difference between intensities of the infrared light before and after transmitting the substrate and layer and by utilizing a difference between intensities of the infrared light absorbed in the substrate and layer and absorbed in only the substrate. Concentrations of the dopants are obtained by utilizing a ratio of light wave number regions corresponding to predetermined intensities of infrared light absorbed in the dopants relative to light wave number regions corresponding to the predetermined intensity of infrared light absorbed in the first material.

Abstract: A method of measuring a concentration of a material includes irradiating an infrared light onto a substrate having a layer including a first material and dopants, wherein the infrared light is partially absorbed by and partially transmitted through the substrate including the layer. Intensities of the infrared light absorbed in the first material and the dopants are computed according to light wave numbers by utilizing a difference between intensities of the infrared light before and after transmitting the substrate and layer and by utilizing a difference between intensities of the infrared light absorbed in the substrate and layer and absorbed in only the substrate. Concentrations of the dopants are obtained by utilizing a ratio of light wave number regions corresponding to predetermined intensities of infrared light absorbed in the dopants relative to light wave number regions corresponding to the predetermined intensity of infrared light absorbed in the first material.

Abstract: A method and an apparatus for analyzing a portion of a sample, such as a minute pattern formed on a semiconductor substrate, by employing a Fast Fourier Transformation (FFT) method, in which a magnified image of a region of a sample to be analyzed is generated and converted into data having a frequency by the FFT method. The converted data are analyzed to determine whether the region of the sample is normal or abnormal. It is possible to measure and analyze the sample simultaneously and automatically by using the apparatus in accordance with the method for analyzing the sample.

Abstract: An automated and integrated substrate inspecting apparatus for performing an EBR/EEW inspection, a defect inspection of patterns and reticle error inspection of a substrate includes a first stage for supporting a substrate; a first image acquisition unit for acquiring a first image of a peripheral portion of the substrate supported by the first stage; a second stage for supporting the substrate; a second image acquisition unit for acquiring a second image of the substrate supported by the second stage; a transfer robot for transferring the substrate between the first stage and the second stage; and a data processing unit, connected to the first image acquisition unit and the second image acquisition unit, for inspecting results of an edge bead removal process and an edge exposure process performed on the substrate using the first image, and for inspecting for defects of patterns formed on the substrate using the second image.

Abstract: A method for supporting a global IP telephony system in an NAT-based private network is disclosed. The disclosed method includes: establishing a special channel for exchanging information for address translation with a NAT router and identifying the type of a dynamic NAT mode of the NAT router using the special channel. A private address contained in a signaling message forwarded to a public IP terminal is transmitted to the NAT router using the special channel, according to the type of the dynamic NAT mode. A public address is dynamically assigned for the private address by the NAT router and used to replace the private address in a regenerated signaling message. The regenerated signaling message is then transmitted to the public IP terminal. The public address assigned by the NAT router is released when a call is terminated. Since the information required in each H.

Abstract: A virtual local area network(VLAN) data switching method uses an address resolution protocol(ARP) packet in VLAN constructed with one internet protocol(IP) subnet. This is achieved by making a source host broadcast an ARP request packet, making a Proxy ARP server prepare to transmit a virtual ARP request packet wherein the Proxy ARP server receives the ARP request packet, and making a destination host transmit an ARP response packet in direct to the source host through a switching unit wherein the destination host receives the virtual ARP request packet. Data transfer delay time for the data exchanged between different VLANs as well as the router load occurring in handling the traffic between VLANs are reduced, so that data handling performance for high-capacity multimedia data transferred on VLANs is improved.