Patents by Inventor Jeong-Tak Moon
Jeong-Tak Moon has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11646285Abstract: Provided is a semiconductor package including a first bump pad on a first substrate, a second bump pad on a second substrate, a core material for reverse reflow between the first bump pad and the second bump pad, and a solder member forming a solder layer on the core material for reverse reflow. The solder member is in contact with the first bump pad and the second bump pad. Each of a first diameter of the first bump pad and a second diameter of the second bump pad is at least about 1.1 times greater than a third diameter of the core material for reverse reflow. The core material for reverse reflow includes a core, a first metal layer directly coated on the core, and a second metal layer directly coated on the first metal layer.Type: GrantFiled: May 18, 2021Date of Patent: May 9, 2023Assignee: MK ELECTRON CO., LTD.Inventors: Jae Yeol Son, Jeong Tak Moon, Jae Hun Song, Young Woo Lee, Seul Gi Lee, Min Su Park, Hui Joong Kim
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Publication number: 20230111798Abstract: A lead-free solder alloy includes bismuth (Bi), content of which is equal to or greater than 56 wt % and equal to or less than 57.5 wt %, indium (In), content of which is equal to or greater than 0.05 wt % and equal to or less than 1.0 wt %, and the balance of tin (Sn) and another unavoidable impurity. The lead-free solder alloy of the disclosure may enable bonding with improved ductility and thermal shock reliability while not having a large melting point change compared to an Sn-58Bi alloy.Type: ApplicationFiled: October 4, 2022Publication date: April 13, 2023Applicant: MK ELECTRON CO., LTD.Inventors: Young Woo LEE, Seul Gi LEE, Hui Joong KIM, Jae Yool SON, Jae Hun SONG, Jeong Tak MOON
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Publication number: 20220212293Abstract: A lead (Pb)-free, and silver (Ag)-free solder alloy includes a primary metallic element in a content of about 1.1 wt % to about 1.9 wt %, nickel(Ni) in a content of about 0.02 wt % to about 0.09 wt %, copper (Cu) in a content of about 0.2 wt % to about 0.9 wt %, and tin (Sn) and other unavoidable impurities in remaining balance, wherein the primary metallic element is at least one selected from the group including bismuth (Bi), chromium (Cr), indium (In), antimony (Sb), silicon (Si) and zinc (Zn).Type: ApplicationFiled: December 22, 2021Publication date: July 7, 2022Applicant: MK ELECTRON CO., LTD.Inventors: Jae Yeol SON, Jeong Tak MOON, Jae Hun SONG, Young Woo LEE, Seul Gi LEE, Min Su PARK, Hui Joong KIM
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Publication number: 20210375811Abstract: A semiconductor package of a pin-grid-array type includes a bump pad on a first substrate, a metal socket on a second substrate, a core material for reverse reflow on the bump pad, and solder paste or a solder bump forming a solder layer on the core material for reverse reflow. The solder paste or the solder bump is in contact with the bump pad. The core material for reverse reflow and the solder paste or the solder bump bonded to the core material for reverse reflow are used as a pin and detachably attached to the metal socket. The core material for reverse reflow includes a core, a first metal layer directly coated on the core, and a second metal layer directly coated on the first metal layer.Type: ApplicationFiled: May 18, 2021Publication date: December 2, 2021Applicant: MK ELECTRON CO., LTD.Inventors: Jae Yeol SON, Jeong Tak Moon, Jae Hun Song, Young Woo Lee, Seul Gi Lee, Min Su Park, Hui Joong Kim
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Publication number: 20210366858Abstract: Provided is a semiconductor package including a first bump pad on a first substrate, a second bump pad on a second substrate, a core material for reverse reflow between the first bump pad and the second bump pad, and a solder member forming a solder layer on the core material for reverse reflow. The solder member is in contact with the first bump pad and the second bump pad. Each of a first diameter of the first bump pad and a second diameter of the second bump pad is at least about 1.1 times greater than a third diameter of the core material for reverse reflow. The core material for reverse reflow includes a core, a first metal layer directly coated on the core, and a second metal layer directly coated on the first metal layer.Type: ApplicationFiled: May 18, 2021Publication date: November 25, 2021Applicant: MK ELECTRON CO., LTD.Inventors: Jae Yeol SON, Jeong Tak MOON, Jae Hun SONG, Young Woo LEE, Seul Gi LEE, Min Su PARK, Hui Joong KIM
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Publication number: 20160315040Abstract: Provided are a reverse-reflow core, a semiconductor package, and a method of fabricating a semiconductor package. The semiconductor package includes: a semiconductor apparatus including a bump pad; and a bump portion bonded to the bump pad. The bump portion includes: a core; an intermetallic compound layer formed on the core; and a solder layer coating the intermetallic compound layer, wherein the thickness of a portion of the solder layer decreases as the distance between the portion of the solder layer and the bump pad increases. The reverse-reflow core, the semiconductor package, and the method of fabricating a semiconductor package enable the fabrication of a semiconductor package having high bonding strength and a high degree of precision.Type: ApplicationFiled: April 21, 2016Publication date: October 27, 2016Inventors: Jae Yeol SON, Jeong Tak MOON, Jae Hun SONG, Young Woo LEE, Eung Jae KIM, Su-Yong RYU, Hui Joong KIM, Ho Gun CHA, Ik Joo MAENG, Chan Goo YOO
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Publication number: 20160244891Abstract: A solder ball for fluxless bonding includes a solder core, a first metal layer on a surface of the solder core, and a second metal layer on the first metal layer. The first metal layer includes at least one of nickel (Ni), silver (Ag), zinc (Zn), tin (Sn), chrome (Cr), antimony (Sb), platinum (Pt), palladium (Pd), aluminum (Al), or an alloy thereof. The second metal layer includes gold (Au). As the above solder ball for fluxless bonding is in use, a solder bump having high reliability may be formed via a relatively short, low cost, and simple process.Type: ApplicationFiled: February 23, 2016Publication date: August 25, 2016Applicant: MK ELECTRON CO., LTD.Inventors: Jae Yeol SON, Jeong Tak MOON, Jae Hun SONG, Young Woo LEE, Eung Jae KIM, Ik Joo MAENG, Chan Goo YOO
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Patent number: 9391039Abstract: A solder ball and a semiconductor device using the same are provided. In a Sn-based solder ball in which a first plating layer and a second plating layer are sequentially formed on a core ball, the second plating layer includes a Sn—Ag—Cu alloy, and Ag3Sn intermetallic compound (IMC) nanoparticles or Ag—Sn compound nanoparticles exist in the second plating layer. The solder balls have high sphericity and stand-off characteristics and connection reliability so that a semiconductor device having a high degree of integration may be implemented.Type: GrantFiled: July 30, 2014Date of Patent: July 12, 2016Assignee: MK Electron Co., Ltd.Inventors: Jeong Tak Moon, Jae Yeol Son, Santosh Kumar, Eung Jae Kim, Hui Joong Kim, Ho Gun Cha
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Publication number: 20150380373Abstract: A solder ball and a semiconductor device using the same are provided. In a Sn-based solder ball in which a first plating layer and a second plating layer are sequentially formed on a core ball, the second plating layer includes a Sn—Ag—Cu alloy, and Ag3Sn intermetallic compound (IMC) nanoparticles or Ag—Sn compound nanoparticles exist in the second plating layer. The solder balls have high sphericity and stand-off characteristics and connection reliability so that a semiconductor device having a high degree of integration may be implemented.Type: ApplicationFiled: July 30, 2014Publication date: December 31, 2015Inventors: Jeong Tak MOON, Jae Yeol SON, Santosh KUMAR, Eung Jae KIM, Hui Joong KIM, Ho Gun CHA
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Patent number: 9156111Abstract: Provided are a lead-free solder, a solder paste, and a semiconductor device, and more particularly, a lead-free solder that includes Cu in a range from about 0.1 wt % to about 0.8 wt %, Pd in a range from about 0.001 wt % to about 0.1 wt %, Al in a range from about 0.001 wt % to about 0.1 wt %, Si in a range from about 0.001 wt % to about 0.1 wt %, and Sn and inevitable impurities as remainder, a solder paste and a semiconductor device including the lead-free solder. The lead-free solder and the solder paste are environment-friendly and have a high high-temperature stability and high reliability.Type: GrantFiled: December 2, 2014Date of Patent: October 13, 2015Assignees: MK ELECTRON CO., LTD., HOSEO UNIVERSITY ACADEMIC COOPERATION FOUNDATION, KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY, KOREA INSTITUTE OF INDUSTRIAL TECHNOLOGY, KOREA ELECTRONICS TECHNOLOGY INSTITUTEInventors: Sung Jae Hong, Keun Soo Kim, Chang Woo Lee, Jung Hwan Bang, Yong Ho Ko, Hyuck Mo Lee, Jae Won Chang, Ja Hyun Koo, Jeong Tak Moon, Young Woo Lee, Won Sik Hong, Hui Joong Kim, Jae Hong Lee
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Publication number: 20150151386Abstract: Provided are a lead-free solder, a solder paste, and a semiconductor device, and more particularly, a lead-free solder that includes Cu in a range from about 0.1 wt % to about 0.8 wt %, Pd in a range from about 0.001 wt % to about 0.1 wt %, Al in a range from about 0.001 wt % to about 0.1 wt %, Si in a range from about 0.001 wt % to about 0.1 wt %, and Sn and inevitable impurities as remainder, a solder paste and a semiconductor device including the lead-free solder. The lead-free solder and the solder paste are environment-friendly and have a high high-temperature stability and high reliability.Type: ApplicationFiled: December 2, 2014Publication date: June 4, 2015Applicants: MK ELECTRON CO., LTD., HOSEO UNIVERSITY ACADEMIC COOPERATION FOUNDATION, KOREA ELECTRONICS TECHNOLOGY INSTITUTE, KOREA INSTITUTE OF INDUSTRIAL TECHNOLOGY, KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGYInventors: Sung Jae HONG, Keun Soo KIM, Chang Woo LEE, Jung Hwan BANG, Yong Ho KO, Hyuck Mo LEE, Jae Won CHANG, Ja Hyun KOO, Jeong Tak MOON, Young Woo LEE, Won Sik HONG, Hui Joong KIM, Jae Hong LEE
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Publication number: 20150064293Abstract: Provided is a metal ball fabricating apparatus for fabricating a metal ball by melting a material. The metal ball fabricating apparatus includes: a fabricating unit configured to fabricate a metal ball; and a collecting unit configured to collect the metal ball. The fabricating unit includes: a chamber configured to receive and store a material; a heating unit configured to apply heat to melt the material in the chamber; an orifice disposed at a lower portion of the chamber to which a metal ball droplet drops; a piston disposed over the orifice to generate a metal ball droplet; and a purifying system configured to remove a foreign substance from the material.Type: ApplicationFiled: August 29, 2014Publication date: March 5, 2015Inventors: Jeong Tak MOON, Jae Yeol SON, Eung Jae KIM, Su Yong RYU, Hyung Jin SUNG, Yong Suk OH, Hak Song LEE
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Publication number: 20140332716Abstract: An anode active material for a secondary battery includes an amount of a first element group in a range of about 0 at % (atomic percent) to about 30 at %, an amount of a second element group in a range of about 0 at % to about 20 at %, a balance of silicon and other unavoidable impurities. The first element group may include copper (Cu), iron (Fe), or a mixture thereof, and the second element group may include titanium (Ti), nickel (Ni), manganese (Mn), aluminum (Al), chromium (Cr), cobalt (Co), zinc (Zn), boron (B), beryllium (Be), molybdenum (Mo), tantalum (Ta), sodium (Na), strontium (Sr), phosphorous (P) or mixtures thereof.Type: ApplicationFiled: July 25, 2014Publication date: November 13, 2014Inventors: Soon Ho HONG, Jong Soo CHO, Jeong Tak Moon
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Publication number: 20140291574Abstract: An anode active material for a secondary battery is provided. The anode active material provides high-capacity, high-efficiency, charging and discharging characteristics. The anode active material for a secondary battery may include a silicon single phase and a silicon-metal alloy phase distributed around the silicon single phase. The silicon-metal alloy phase may include copper, iron, titanium and nickel.Type: ApplicationFiled: June 13, 2014Publication date: October 2, 2014Inventors: Soon Ho HONG, Jong Soo CHO, Jeong Tak Moon
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Publication number: 20140284794Abstract: A tin (Sn)-based solder ball having appropriate characteristics for electronic products and a semiconductor package including the same are provided. The tin-based solder ball includes about 0.3 to 3.0 wt. % silver (Ag), about 0.4 to 0.8 wt. % copper (Cu), about 0.01 to 0.09 wt. % nickel (Ni), about 0.1% to 0.5 wt. % bismuth (Bi), and balance of tin (Sn) and unavoidable impurities.Type: ApplicationFiled: November 7, 2012Publication date: September 25, 2014Applicant: MK ELECTRON CO., LTD.Inventors: Jae Hong Lee, II Ho Kim, Sung Jae Hong, Jeong Tak Moon
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Publication number: 20140203207Abstract: An anode active material for a lithium secondary battery having high-capacity and high-efficient charging/discharging characteristics. The anode active material includes silicon single phases, and silicon-metal alloy phases distributed around the silicon single phases. The silicon single phases have a fine structure in which crystalline particles obtained through rapid-cooling solidification are thermally treated to be grown to crystal grains.Type: ApplicationFiled: January 22, 2013Publication date: July 24, 2014Applicant: MK ELECTRON CO., LTD.Inventors: Hee Sang Jeon, Jong Soo CHO, Jeong Tak MOON
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Publication number: 20140199594Abstract: An anode active material for a lithium secondary battery having high-capacity and high-efficient charge/discharge characteristics. The anode active material includes silicon single phases; and silicon-metal alloy phases surrounding the silicon single phases. A dopant is distributed in the anode active material, and the silicon single phases are formed through rapid-cooling solidification, and the silicon single phases have a fine microstructure due to the dopant.Type: ApplicationFiled: January 16, 2013Publication date: July 17, 2014Applicant: MK ELECTRON CO., LTD.Inventors: Soon Ho HONG, Jong Soo CHO, Jeong Tak MOON
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Patent number: 8716860Abstract: A tin (Sn)-based solder ball and a semiconductor package including the same are provided. The tin-based solder ball includes about 0.2 to 4 wt. % silver (Ag), about 0.1 to 1 wt. % copper (Cu), about 0.001 to 0.3 wt. % aluminum (Al), about 0.001% to 0.1 wt. % germanium (Ge), and balance of tin and unavoidable impurities. The tin-based solder ball has a high oxidation resistance.Type: GrantFiled: December 13, 2012Date of Patent: May 6, 2014Assignee: MK Electron Co., Ltd.Inventors: Young Woo Lee, Im Bok Lee, Sung Jae Hong, Jeong Tak Moon
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Publication number: 20140023928Abstract: An anode active material for a lithium secondary battery having a high capacity and a high efficiency of charge discharge characteristics. The anode active material includes a silicon mono-phase and an alloy phase formed of silicon with a metal element at least one selected from the group consisting of Ti, Ni, Cu, Fe, Mn, Al, Cr, Co, and Zn. The anode active material is a powder in which the silicon mono-phase is uniformly distributed in a matrix of the alloy phase, has particle size distribution defined as D0.1 and D0.9, and the value of D0.1-D0.9 is in a range from about 3 ?m to about 15 ?m.Type: ApplicationFiled: October 31, 2012Publication date: January 23, 2014Applicant: MK ELECTRON CO., LTD.Inventors: Sung Min JEON, Jong Soo CHO, Jeong Tak MOON
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Patent number: 8022541Abstract: A gold-silver based wire for a semiconductor package has high humidity reliability as well as high dry reliability. The wire includes a first additive ingredient that contains 5˜15 wt % of at least one kind of elements from among first group elements composed of palladium (Pd) and platinum (Pt) added to a gold (Au)-silver (Ag) based alloy that contains 10˜40 wt % of Ag added to Au.Type: GrantFiled: May 23, 2007Date of Patent: September 20, 2011Assignee: MK Electron Co., Ltd.Inventors: Jong Soo Cho, Yong Jin Park, Jeong Tak Moon, Eun Kyu Her, Kyu Hwan Oh