Abstract: An Ag-based alloy wire for a semiconductor package is highly reliable and can be fabricated with low costs. The Ag-based alloy wire includes 0.05˜5 wt % of at least one kind of a first additive ingredient selected from the group consisting of platinum (Pt), palladium (Pd), rhodium (Rh), osmium (Os), gold (Au), and nickel (Ni), and Ag as a remainder.

Abstract: A semiconductor package using Ag or Ag alloy wire which can maintain superior reliability against a noble metal and lower its manufacturing cost is provided. The semiconductor package comprises a semiconductor substrate. A semiconductor chip is attached to the package substrate and has one or more pads which comprise a noble metal. And one or more wires are bonded so as to electrically connect the one or more pads and the package substrate and comprise Ag or Ag alloy.

Abstract: A gold-silver based wire for a semiconductor package has high humidity reliability as well as high dry reliability. The wire includes a first additive ingredient that contains 5˜15 wt % of at least one kind of elements from among first group elements composed of palladium (Pd) and platinum (Pt) added to a gold (Au)-silver (Ag) based alloy that contains 10˜40 wt % of Ag added to Au.

Abstract: A gold-silver alloy bonding wire for a semiconductor device is provided. The bonding wire contains: a Au-Ag alloy including 5-40% Ag by weight in Au having a purity of 99.999% or greater; at least one element of a first group consisting of Pd, Rh, Pt, and Ir in an amount of about 50-10,000 ppm by weight; at least one element of a second group consisting of B, Be, and Ca in an amount of about 1-50 ppm by weight; at least one element of a third group consisting of P, Sb, and Bi in an amount of about 1-50 ppm by weight; and at least one element of a fourth group consisting of Mg, TI, Zn, and Sn in an amount of about 5-50 ppm by weight. The bonding wire is highly reliable with a strong tensile strength at room temperature and high temperature and favourable bondability. When the bonding wire is looped, no rupture occurs in a ball neck region. Also, no chip cracking occurs since the ball is soft.

Abstract: A gold-silver alloy bonding wire for a semiconductor device is provided. The bonding wire contains: a Au-Ag alloy including 5-40% Ag by weight in Au having a purity of 99.999% or greater; at least one element of a first group consisting of Pd, Rh, Pt, and Ir in an amount of about 50-10,000 ppm by weight; at least one element of a second group consisting of B, Be, and Ca in an amount of about 1-50 ppm by weight; at least one element of a third group consisting of P, Sb, and Bi in an amount-of about 1-50 ppm by weight; and at least one element of a fourth group consisting of Mg, TI, Zn, and Sn in an amount of about 5-50 ppm by weight. The bonding wire is highly reliable with a strong tensile strength at room temperature and high temperature and favourable bondability. When the bonding wire is looped, no rupture occurs in a ball neck region. Also, no chip cracking occurs since the ball is soft.

Abstract: An apparatus for manufacturing solder balls including a tundish, a vibrator, a cooling liquid tank an inactive atmospheric chamber, a molten metal receiving tray, a ball collecting barrel, and a cooling liquid reservoir. The tundish has orifices at its bottom. The vibrator is immersed in the molten metal of the tundish and generates vibrations. The cooling liquid tank is situated under the tundish and is provided with a cooling liquid heater at its upper and middle outer surface, a cooling liquid cooler at its lower outer surface, and a cooling liquid discharge conduit at its top. The inactive atmospheric chamber is interposed between the bottom of the tundish and the op surface of the cooling liquid. The molten metal receiving tray is seated on a portion of the inactive atmospheric chamber and is horizontally movable.

Abstract: An apparatus for manufacturing solder balls including a tundish, a vibrator, a cooling liquid tank an inactive atmospheric chamber, a molten metal receiving tray, a ball collecting barrel, and a cooling liquid reservoir. The tundish has orifices at its bottom. The vibrator is immersed in the molten metal of the tundish and generates vibrations. The cooling liquid tank is situated under the tundish and is provided with a cooling liquid heater at its upper and middle outer surface, a cooling liquid cooler at its lower outer surface, and a cooling liquid discharge conduit at its top. The inactive atmospheric chamber is interposed between the bottom of the tundish and the op surface of the cooling liquid. The molten metal receiving tray is seated on a portion of the inactive atmospheric chamber and is horizontally movable.

Abstract: Method for manufacturing solder balls is disclosed. The apparatus comprises a tundish, a vibrator, a cooling liquid tank, an inactive atmospheric chamber, a molten metal receiving tray, a ball collecting barrel and a cooling liquid reservoir. The tundish has orifices at its bottom. The vibrator is immersed in the molten metal of the tundish and generates vibrations. The cooling liquid tank is situated under the tundish and is provided with a cooling liquid heater at its upper and middle outer surface and a cooling liquid cooler at its lower outer surface. The inactive atmospheric chamber is interposed between the bottom of the tundish and the top surface of the cooling liquid. The molten metal receiving tray is seated on a portion of the inactive atmospheric chamber and is horizontally movable. The ball collecting barrel is positioned under the cooling liquid tank and is provided with a cut-off valve at its top, a ball removing valve at its bottom and a cooling liquid supply conduit at its upper portion.