Patents by Inventor Jeong Tak Oh

Jeong Tak Oh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9711682
    Abstract: The light emitting device includes a first conductive semiconductor layer; a second conductive semiconductor layer on the first conductive semiconductor layer; and an active layer between the first and second conductive semiconductor layers. The active layer includes a plurality of well layers and a plurality of barrier layers, wherein the well layers include a first well layer and a second well layer adjacent to the first well layer. The barrier layers include a first barrier layer disposed between the first and second well layers, and the first barrier layer includes a plurality of semiconductor layers having an energy bandgap wider than an energy bandgap of the first well layer. At least two layers of the plurality of semiconductor layers are adjacent to the first and second well layers, and have aluminum contents greater than that of the other layer.
    Type: Grant
    Filed: August 19, 2013
    Date of Patent: July 18, 2017
    Assignee: LG INNOTEK CO., LTD.
    Inventors: Young Hun Han, Rak Jun Choi, Jeong Tak Oh
  • Patent number: 9281437
    Abstract: Disclosed are a light emitting device, a method of fabricating the light emitting device, a light emitting device package, and a lighting system. The light emitting device includes a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, an electron blocking layer on the active layer, and a second conductive semiconductor layer on the electron blocking layer. The electron blocking layer includes a first electron blocking layer and an interrupted diffusion layer on the first electron blocking layer.
    Type: Grant
    Filed: April 19, 2013
    Date of Patent: March 8, 2016
    Assignee: LG INNOTEK CO., LTD.
    Inventors: Dong Wook Kim, June O Song, Rak Jun Choi, Jeong Tak Oh
  • Patent number: 9190571
    Abstract: A light emitting device includes a first semiconductor layer having a first conductive dopant, an active layer on the first semiconductor layer, an electron blocking layer on the active layer, a carrier injection layer between the active layer and the electron blocking layer, and a second semiconductor layer having a second conductive dopant on the electron blocking layer. The carrier injection layer includes the first conductive dopant and the second conductive dopant, and the first conductive dopant of the carrier injection layer has a concentration lower than a concentration of the second conductive dopant.
    Type: Grant
    Filed: October 18, 2013
    Date of Patent: November 17, 2015
    Assignee: LG Innotek Co., Ltd.
    Inventors: Eun Sil Choi, Jeong Tak Oh, Myung Hoon Jung, Ki Young Song
  • Patent number: 9166098
    Abstract: There is provided a nitride semiconductor light emitting device including an active layer of a multi quantum well structure, the nitride semiconductor light emitting device including: a substrate; and a buffer layer, an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer sequentially stacked on the substrate, wherein the active layer is formed of a multi quantum well structure where a plurality of barrier layers and a plurality of well layers are arranged alternately with each other, and at least one of the plurality of barrier layers includes a first barrier layer including a p-doped barrier layer doped with a p-dopant and an undoped barrier layer.
    Type: Grant
    Filed: December 18, 2008
    Date of Patent: October 20, 2015
    Assignees: Samsung Electronics Co., Ltd., Gwangju Institute of Science and Technology
    Inventors: Sang Won Kang, Seong Ju Park, Min Ki Kwon, Sang Jun Lee, Joo Young Cho, Yong Chun Kim, Sang Heon Han, Dong Ju Lee, Jeong Tak Oh, Je Won Kim
  • Publication number: 20150214422
    Abstract: Disclosed are a light emitting device, a method of fabricating the light emitting device, a light emitting device package, and a lighting system. The light emitting device includes a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, an electron blocking layer on the active layer, and a second conductive semiconductor layer on the electron blocking layer. The electron blocking layer includes a first electron blocking layer and an interrupted diffusion layer on the first electron blocking layer.
    Type: Application
    Filed: April 19, 2013
    Publication date: July 30, 2015
    Applicant: LG INNOTEK CO., LTD.
    Inventors: Dong Wook Kim, June O Song, Rak Jun Choi, Jeong Tak Oh
  • Patent number: 8866167
    Abstract: The present invention relates to a GaN based nitride based light emitting device improved in Electrostatic Discharge (ESD) tolerance (withstanding property) and a method for fabricating the same including a substrate and a V-shaped distortion structure made of an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer on the substrate and formed with reference to the n-type nitride semiconductor layer.
    Type: Grant
    Filed: April 1, 2013
    Date of Patent: October 21, 2014
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Sang Won Kang, Yong Chun Kim, Dong Hyun Cho, Jeong Tak Oh, Dong Joon Kim
  • Patent number: 8728841
    Abstract: A nitride semiconductor light emitting device, and a method of manufacturing the same are disclosed. The nitride semiconductor light emitting device includes a substrate, an n-type nitride semiconductor layer disposed on the substrate and including a plurality of V-shaped pits in a top surface thereof, an active layer disposed on the n-type nitride semiconductor layer and including depressions conforming to the shape of the plurality of V-shaped pits, and a p-type nitride semiconductor layer disposed on the active layer and including a plurality of protrusions on a top surface thereof. Since the plurality of V-shaped pits are formed in the top surface of the n-type nitride semiconductor layer, the protrusions can be formed on the p-type nitride semiconductor layer as an in-situ process. Accordingly, the resistance to ESD, and light extraction efficiency are enhanced.
    Type: Grant
    Filed: February 2, 2012
    Date of Patent: May 20, 2014
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jeong Tak Oh, Yong Chun Kim
  • Publication number: 20140110720
    Abstract: A light emitting device includes a first semiconductor layer having a first conductive dopant, an active layer on the first semiconductor layer, an electron blocking layer on the active layer, a carrier injection layer between the active layer and the electron blocking layer, and a second semiconductor layer having a second conductive dopant on the electron blocking layer. The carrier injection layer includes the first conductive dopant and the second conductive dopant, and the first conductive dopant of the carrier injection layer has a concentration lower than a concentration of the second conductive dopant.
    Type: Application
    Filed: October 18, 2013
    Publication date: April 24, 2014
    Inventors: Eun Sil CHOI, Jeong Tak OH, Myung Hoon JUNG, Ki Young SONG
  • Patent number: 8686450
    Abstract: The present invention relates to a method of manufacturing a vertically-structured GaN-based light emitting diode. The method of manufacturing a vertically-structured GaN-based light emitting diode includes forming a GaN layer on a substrate; patterning the compound layer in a predetermined shape; forming an n-type GaN layer on the patterned compound layer through the epitaxial lateral over-growth process and sequentially forming an active layer and a p-type GaN layer on the n-type GaN layer; forming a structure supporting layer on the p-type GaN layer; sequentially removing the substrate and the GaN layer formed on the substrate after forming the structure supporting layer; removing the patterned compound layer exposed after removing the GaN layer so as to form an n-type GaN layer patterned in a concave shape; and forming an n-type electrode on the n-type GaN layer patterned in a concave shape.
    Type: Grant
    Filed: August 23, 2007
    Date of Patent: April 1, 2014
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jae Hoon Lee, Hee Seok Choi, Jeong Tak Oh, Su Yeol Lee
  • Publication number: 20140054542
    Abstract: The light emitting device includes a first conductive semiconductor layer; a second conductive semiconductor layer on the first conductive semiconductor layer; and an active layer between the first and second conductive semiconductor layers. The active layer includes a plurality of well layers and a plurality of barrier layers, wherein the well layers include a first well layer and a second well layer adjacent to the first well layer. The barrier layers include a first barrier layer disposed between the first and second well layers, and the first barrier layer includes a plurality of semiconductor layers having an energy bandgap wider than an energy bandgap of the first well layer. At least two layers of the plurality of semiconductor layers are adjacent to the first and second well layers, and have aluminum contents greater than that of the other layer.
    Type: Application
    Filed: August 19, 2013
    Publication date: February 27, 2014
    Inventors: Young Hun HAN, Rak Jun Choi, Jeong Tak Oh
  • Publication number: 20130230938
    Abstract: The present invention relates to a GaN based nitride based light emitting device improved in Electrostatic Discharge (ESD) tolerance (withstanding property) and a method for fabricating the same including a substrate and a V-shaped distortion structure made of an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer on the substrate and formed with reference to the n-type nitride semiconductor layer.
    Type: Application
    Filed: April 1, 2013
    Publication date: September 5, 2013
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Sang Won KANG, Yong Chun KIM, Dong Hyun CHO, Jeong Tak OH, Dong Joon KIM
  • Patent number: 8455906
    Abstract: The present invention provides a semiconductor light-emitting device. The light-emitting device comprises a first conductive clad layer, an active layer, and a second conductive clad layer sequentially formed on a substrate. In the light-emitting device, the substrate has one or more side patterns formed on an upper surface thereof while being joined to one or more edges of the upper surface. The side patterns consist of protrusions or depressions so as to scatter or diffract light to an upper portion or a lower portion of the light-emitting device.
    Type: Grant
    Filed: November 1, 2011
    Date of Patent: June 4, 2013
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Sun Woon Kim, Hyun Kyung Kim, Je Won Kim, In Seok Choi, Kyu Han Lee, Jeong Tak Oh
  • Patent number: 8440996
    Abstract: The present invention relates to a GaN based nitride based light emitting device improved in Electrostatic Discharge (ESD) tolerance (withstanding property) and a method for fabricating the same including a substrate and a V-shaped distortion structure made of an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer on the substrate and formed with reference to the n-type nitride semiconductor layer.
    Type: Grant
    Filed: January 25, 2012
    Date of Patent: May 14, 2013
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Sang Won Kang, Yong Chun Kim, Dong Hyun Cho, Jeong Tak Oh, Dong Joon Kim
  • Patent number: 8415708
    Abstract: Disclosed herein is a nitride-based semiconductor light-emitting device. The nitride-based semiconductor light-emitting device comprises an n-type clad layer made of n-type Alx1Iny1Ga(1-x1-y1)N (where 0?x1?1, 0?y1?1, and 0?x1+y1?1), a multiple quantum well-structured active layer made of undoped InAGa1-AN (where 0<A<1) formed on the n-type clad layer, and a p-type clad layer formed on the active layer wherein the p-type clad layer includes at least a first layer made of p-type Iny2Ga1-y2N (where 0?y2<1) formed on the active layer and a second layer made of p-type Alx3Iny3Ga(1-x3-y3)N (where 0<x3?1, 0?y3?1, and 0<x3+y3?1) formed on the first layer.
    Type: Grant
    Filed: October 25, 2010
    Date of Patent: April 9, 2013
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Je Won Kim, Jeong Tak Oh, Dong Joon Kim, Sun Woon Kim, Jin Sub Park, Kyu Han Lee
  • Patent number: 8410497
    Abstract: There is provided a semiconductor light emitting device that can easily dissipate heat, improve current spreading efficiency, and reduce defects by blocking dislocations occurring when a semiconductor layer is grown to thereby increase reliability. A semiconductor light emitting device including a substrate, a light emitting structure having an n-type semiconductor layer, an active layer, and a p-type semiconductor layer sequentially laminated, and an n-type electrode and a p-type electrode formed on the n-type semiconductor layer and the p-type semiconductor layer, respectively, according to an aspect of the invention may include: a metal layer formed in the n-type semiconductor layer and contacting the n-type electrode.
    Type: Grant
    Filed: December 18, 2008
    Date of Patent: April 2, 2013
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Sang Won Kang, Seong Ju Park, Joo Young Cho, Il Kyu Park, Yong Chun Kim, Dong Joon Kim, Jeong Tak Oh, Je Won Kim
  • Publication number: 20120129289
    Abstract: A nitride semiconductor light emitting device, and a method of manufacturing the same are disclosed. The nitride semiconductor light emitting device includes a substrate, an n-type nitride semiconductor layer disposed on the substrate and including a plurality of V-shaped pits in a top surface thereof, an active layer disposed on the n-type nitride semiconductor layer and including depressions conforming to the shape of the plurality of V-shaped pits, and a p-type nitride semiconductor layer disposed on the active layer and including a plurality of protrusions on a top surface thereof. Since the plurality of V-shaped pits are formed in the top surface of the n-type nitride semiconductor layer, the protrusions can be formed on the p-type nitride semiconductor layer as an in-situ process. Accordingly, the resistance to ESD, and light extraction efficiency are enhanced.
    Type: Application
    Filed: February 2, 2012
    Publication date: May 24, 2012
    Applicant: Samsung LED Co., Ltd.
    Inventors: Jeong Tak OH, Yong Chun Kim
  • Publication number: 20120119187
    Abstract: The present invention relates to a GaN based nitride based light emitting device improved in Electrostatic Discharge (ESD) tolerance (withstanding property) and a method for fabricating the same including a substrate and a V-shaped distortion structure made of an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer on the substrate and formed with reference to the n-type nitride semiconductor layer.
    Type: Application
    Filed: January 25, 2012
    Publication date: May 17, 2012
    Applicant: SAMSUNG LED CO., LTD
    Inventors: Sang Won KANG, Yong Chun KIM, Dong Hyun CHO, Jeong Tak OH, Dong Joon KIM
  • Publication number: 20120119254
    Abstract: Provided are a light emitting device, a light emitting device package, and a lighting system. The light emitting device comprises a first conductive type first semiconductor layer, an active layer, a second conductive type second semiconductor layer, a reliability enhancement layer, and a second conductive type third semiconductor layer. The active layer is disposed on the first conductive type first semiconductor layer. The second conductive type second semiconductor layer is disposed on the active layer. The reliability enhancement layer is disposed on the second conductive type second semiconductor layer. The second conductive type third semiconductor layer is disposed on the reliability enhancement layer and comprises a light extraction pattern. The reliability enhancement layer and the active layer are spaced apart from each other by a distance of 0.3 ?m to 5 ?m.
    Type: Application
    Filed: January 25, 2012
    Publication date: May 17, 2012
    Inventors: Yong Tae MOON, Yong Seon Song, Sung Hoon Jung, Joong Seo Park, Sang Jun Lee, Jeong Tak Oh, Rak Jun Choi
  • Patent number: 8134170
    Abstract: A nitride semiconductor light emitting device, and a method of manufacturing the same are disclosed. The nitride semiconductor light emitting device includes a substrate, an n-type nitride semiconductor layer disposed on the substrate and including a plurality of V-shaped pits in a top surface thereof, an active layer disposed on the n-type nitride semiconductor layer and including depressions conforming to the shape of the plurality of V-shaped pits, and a p-type nitride semiconductor layer disposed on the active layer and including a plurality of protrusions on a top surface thereof. Since the plurality of V-shaped pits are formed in the top surface of the n-type nitride semiconductor layer, the protrusions can be formed on the p-type nitride semiconductor layer as an in-situ process. Accordingly, the resistance to ESD, and light extraction efficiency are enhanced.
    Type: Grant
    Filed: November 17, 2009
    Date of Patent: March 13, 2012
    Assignee: Samsung LED Co., Ltd.
    Inventors: Jeong Tak Oh, Yong Chun Kim
  • Patent number: 8129711
    Abstract: The present invention relates to a GaN based nitride based light emitting device improved in Electrostatic Discharge (ESD) tolerance (withstanding property) and a method for fabricating the same including a substrate and a V-shaped distortion structure made of an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer on the substrate and formed with reference to the n-type nitride semiconductor layer.
    Type: Grant
    Filed: July 11, 2008
    Date of Patent: March 6, 2012
    Assignee: Samsung LED Co., Ltd.
    Inventors: Sang Won Kang, Yong Chun Kim, Dong Hyun Cho, Jeong Tak Oh, Dong Joon Kim