Patents by Inventor Jeong Tak Oh
Jeong Tak Oh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10971649Abstract: An embodiment relates to a semiconductor device and a light emitting device package including the same. The semiconductor device according to the embodiment may include: a first semiconductor layer; a second semiconductor layer disposed on the first semiconductor layer and including V-pits; an active layer disposed on the second semiconductor layer; a third semiconductor layer having a bandgap wider than that of the active layer on the active layer; a fourth semiconductor layer having a band gap narrower than that of third semiconductor layer on the third semiconductor layer; and a fifth semiconductor layer having a bandgap wider than that of the fourth semiconductor layer on the fourth semiconductor layer, wherein the third semiconductor layer and the fifth semiconductor layer include an aluminum composition, and the fifth semiconductor layer has a bandgap equal to or wider than that of the third semiconductor layer.Type: GrantFiled: January 4, 2018Date of Patent: April 6, 2021Assignee: LG INNOTEK CO., LTD.Inventors: Jong Ho Na, Oh Min Kwon, June O Song, Jeong Tak Oh
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Publication number: 20190348567Abstract: An embodiment relates to a semiconductor device and a light emitting device package including the same. The semiconductor device according to the embodiment may include: a first semiconductor layer; a second semiconductor layer disposed on the first semiconductor layer and including V-pits; an active layer disposed on the second semiconductor layer; a third semiconductor layer having a bandgap wider than that of the active layer on the active layer; a fourth semiconductor layer having a band gap narrower than that of third semiconductor layer on the third semiconductor layer; and a fifth semiconductor layer having a bandgap wider than that of the fourth semiconductor layer on the fourth semiconductor layer, wherein the third semiconductor layer and the fifth semiconductor layer include an aluminum composition, and the fifth semiconductor layer has a bandgap equal to or wider than that of the third semiconductor layer.Type: ApplicationFiled: January 4, 2018Publication date: November 14, 2019Inventors: Jong Ho NA, Oh Min KWON, June O SONG, Jeong Tak OH
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Patent number: 9711682Abstract: The light emitting device includes a first conductive semiconductor layer; a second conductive semiconductor layer on the first conductive semiconductor layer; and an active layer between the first and second conductive semiconductor layers. The active layer includes a plurality of well layers and a plurality of barrier layers, wherein the well layers include a first well layer and a second well layer adjacent to the first well layer. The barrier layers include a first barrier layer disposed between the first and second well layers, and the first barrier layer includes a plurality of semiconductor layers having an energy bandgap wider than an energy bandgap of the first well layer. At least two layers of the plurality of semiconductor layers are adjacent to the first and second well layers, and have aluminum contents greater than that of the other layer.Type: GrantFiled: August 19, 2013Date of Patent: July 18, 2017Assignee: LG INNOTEK CO., LTD.Inventors: Young Hun Han, Rak Jun Choi, Jeong Tak Oh
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Patent number: 9281437Abstract: Disclosed are a light emitting device, a method of fabricating the light emitting device, a light emitting device package, and a lighting system. The light emitting device includes a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, an electron blocking layer on the active layer, and a second conductive semiconductor layer on the electron blocking layer. The electron blocking layer includes a first electron blocking layer and an interrupted diffusion layer on the first electron blocking layer.Type: GrantFiled: April 19, 2013Date of Patent: March 8, 2016Assignee: LG INNOTEK CO., LTD.Inventors: Dong Wook Kim, June O Song, Rak Jun Choi, Jeong Tak Oh
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Patent number: 9190571Abstract: A light emitting device includes a first semiconductor layer having a first conductive dopant, an active layer on the first semiconductor layer, an electron blocking layer on the active layer, a carrier injection layer between the active layer and the electron blocking layer, and a second semiconductor layer having a second conductive dopant on the electron blocking layer. The carrier injection layer includes the first conductive dopant and the second conductive dopant, and the first conductive dopant of the carrier injection layer has a concentration lower than a concentration of the second conductive dopant.Type: GrantFiled: October 18, 2013Date of Patent: November 17, 2015Assignee: LG Innotek Co., Ltd.Inventors: Eun Sil Choi, Jeong Tak Oh, Myung Hoon Jung, Ki Young Song
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Patent number: 9166098Abstract: There is provided a nitride semiconductor light emitting device including an active layer of a multi quantum well structure, the nitride semiconductor light emitting device including: a substrate; and a buffer layer, an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer sequentially stacked on the substrate, wherein the active layer is formed of a multi quantum well structure where a plurality of barrier layers and a plurality of well layers are arranged alternately with each other, and at least one of the plurality of barrier layers includes a first barrier layer including a p-doped barrier layer doped with a p-dopant and an undoped barrier layer.Type: GrantFiled: December 18, 2008Date of Patent: October 20, 2015Assignees: Samsung Electronics Co., Ltd., Gwangju Institute of Science and TechnologyInventors: Sang Won Kang, Seong Ju Park, Min Ki Kwon, Sang Jun Lee, Joo Young Cho, Yong Chun Kim, Sang Heon Han, Dong Ju Lee, Jeong Tak Oh, Je Won Kim
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Publication number: 20150214422Abstract: Disclosed are a light emitting device, a method of fabricating the light emitting device, a light emitting device package, and a lighting system. The light emitting device includes a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, an electron blocking layer on the active layer, and a second conductive semiconductor layer on the electron blocking layer. The electron blocking layer includes a first electron blocking layer and an interrupted diffusion layer on the first electron blocking layer.Type: ApplicationFiled: April 19, 2013Publication date: July 30, 2015Applicant: LG INNOTEK CO., LTD.Inventors: Dong Wook Kim, June O Song, Rak Jun Choi, Jeong Tak Oh
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Patent number: 8866167Abstract: The present invention relates to a GaN based nitride based light emitting device improved in Electrostatic Discharge (ESD) tolerance (withstanding property) and a method for fabricating the same including a substrate and a V-shaped distortion structure made of an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer on the substrate and formed with reference to the n-type nitride semiconductor layer.Type: GrantFiled: April 1, 2013Date of Patent: October 21, 2014Assignee: Samsung Electronics Co., Ltd.Inventors: Sang Won Kang, Yong Chun Kim, Dong Hyun Cho, Jeong Tak Oh, Dong Joon Kim
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Patent number: 8728841Abstract: A nitride semiconductor light emitting device, and a method of manufacturing the same are disclosed. The nitride semiconductor light emitting device includes a substrate, an n-type nitride semiconductor layer disposed on the substrate and including a plurality of V-shaped pits in a top surface thereof, an active layer disposed on the n-type nitride semiconductor layer and including depressions conforming to the shape of the plurality of V-shaped pits, and a p-type nitride semiconductor layer disposed on the active layer and including a plurality of protrusions on a top surface thereof. Since the plurality of V-shaped pits are formed in the top surface of the n-type nitride semiconductor layer, the protrusions can be formed on the p-type nitride semiconductor layer as an in-situ process. Accordingly, the resistance to ESD, and light extraction efficiency are enhanced.Type: GrantFiled: February 2, 2012Date of Patent: May 20, 2014Assignee: Samsung Electronics Co., Ltd.Inventors: Jeong Tak Oh, Yong Chun Kim
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Publication number: 20140110720Abstract: A light emitting device includes a first semiconductor layer having a first conductive dopant, an active layer on the first semiconductor layer, an electron blocking layer on the active layer, a carrier injection layer between the active layer and the electron blocking layer, and a second semiconductor layer having a second conductive dopant on the electron blocking layer. The carrier injection layer includes the first conductive dopant and the second conductive dopant, and the first conductive dopant of the carrier injection layer has a concentration lower than a concentration of the second conductive dopant.Type: ApplicationFiled: October 18, 2013Publication date: April 24, 2014Inventors: Eun Sil CHOI, Jeong Tak OH, Myung Hoon JUNG, Ki Young SONG
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Patent number: 8686450Abstract: The present invention relates to a method of manufacturing a vertically-structured GaN-based light emitting diode. The method of manufacturing a vertically-structured GaN-based light emitting diode includes forming a GaN layer on a substrate; patterning the compound layer in a predetermined shape; forming an n-type GaN layer on the patterned compound layer through the epitaxial lateral over-growth process and sequentially forming an active layer and a p-type GaN layer on the n-type GaN layer; forming a structure supporting layer on the p-type GaN layer; sequentially removing the substrate and the GaN layer formed on the substrate after forming the structure supporting layer; removing the patterned compound layer exposed after removing the GaN layer so as to form an n-type GaN layer patterned in a concave shape; and forming an n-type electrode on the n-type GaN layer patterned in a concave shape.Type: GrantFiled: August 23, 2007Date of Patent: April 1, 2014Assignee: Samsung Electronics Co., Ltd.Inventors: Jae Hoon Lee, Hee Seok Choi, Jeong Tak Oh, Su Yeol Lee
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Publication number: 20140054542Abstract: The light emitting device includes a first conductive semiconductor layer; a second conductive semiconductor layer on the first conductive semiconductor layer; and an active layer between the first and second conductive semiconductor layers. The active layer includes a plurality of well layers and a plurality of barrier layers, wherein the well layers include a first well layer and a second well layer adjacent to the first well layer. The barrier layers include a first barrier layer disposed between the first and second well layers, and the first barrier layer includes a plurality of semiconductor layers having an energy bandgap wider than an energy bandgap of the first well layer. At least two layers of the plurality of semiconductor layers are adjacent to the first and second well layers, and have aluminum contents greater than that of the other layer.Type: ApplicationFiled: August 19, 2013Publication date: February 27, 2014Inventors: Young Hun HAN, Rak Jun Choi, Jeong Tak Oh
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Publication number: 20130230938Abstract: The present invention relates to a GaN based nitride based light emitting device improved in Electrostatic Discharge (ESD) tolerance (withstanding property) and a method for fabricating the same including a substrate and a V-shaped distortion structure made of an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer on the substrate and formed with reference to the n-type nitride semiconductor layer.Type: ApplicationFiled: April 1, 2013Publication date: September 5, 2013Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Sang Won KANG, Yong Chun KIM, Dong Hyun CHO, Jeong Tak OH, Dong Joon KIM
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Patent number: 8455906Abstract: The present invention provides a semiconductor light-emitting device. The light-emitting device comprises a first conductive clad layer, an active layer, and a second conductive clad layer sequentially formed on a substrate. In the light-emitting device, the substrate has one or more side patterns formed on an upper surface thereof while being joined to one or more edges of the upper surface. The side patterns consist of protrusions or depressions so as to scatter or diffract light to an upper portion or a lower portion of the light-emitting device.Type: GrantFiled: November 1, 2011Date of Patent: June 4, 2013Assignee: Samsung Electronics Co., Ltd.Inventors: Sun Woon Kim, Hyun Kyung Kim, Je Won Kim, In Seok Choi, Kyu Han Lee, Jeong Tak Oh
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Patent number: 8440996Abstract: The present invention relates to a GaN based nitride based light emitting device improved in Electrostatic Discharge (ESD) tolerance (withstanding property) and a method for fabricating the same including a substrate and a V-shaped distortion structure made of an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer on the substrate and formed with reference to the n-type nitride semiconductor layer.Type: GrantFiled: January 25, 2012Date of Patent: May 14, 2013Assignee: Samsung Electronics Co., Ltd.Inventors: Sang Won Kang, Yong Chun Kim, Dong Hyun Cho, Jeong Tak Oh, Dong Joon Kim
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Patent number: 8415708Abstract: Disclosed herein is a nitride-based semiconductor light-emitting device. The nitride-based semiconductor light-emitting device comprises an n-type clad layer made of n-type Alx1Iny1Ga(1-x1-y1)N (where 0?x1?1, 0?y1?1, and 0?x1+y1?1), a multiple quantum well-structured active layer made of undoped InAGa1-AN (where 0<A<1) formed on the n-type clad layer, and a p-type clad layer formed on the active layer wherein the p-type clad layer includes at least a first layer made of p-type Iny2Ga1-y2N (where 0?y2<1) formed on the active layer and a second layer made of p-type Alx3Iny3Ga(1-x3-y3)N (where 0<x3?1, 0?y3?1, and 0<x3+y3?1) formed on the first layer.Type: GrantFiled: October 25, 2010Date of Patent: April 9, 2013Assignee: Samsung Electronics Co., Ltd.Inventors: Je Won Kim, Jeong Tak Oh, Dong Joon Kim, Sun Woon Kim, Jin Sub Park, Kyu Han Lee
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Patent number: 8410497Abstract: There is provided a semiconductor light emitting device that can easily dissipate heat, improve current spreading efficiency, and reduce defects by blocking dislocations occurring when a semiconductor layer is grown to thereby increase reliability. A semiconductor light emitting device including a substrate, a light emitting structure having an n-type semiconductor layer, an active layer, and a p-type semiconductor layer sequentially laminated, and an n-type electrode and a p-type electrode formed on the n-type semiconductor layer and the p-type semiconductor layer, respectively, according to an aspect of the invention may include: a metal layer formed in the n-type semiconductor layer and contacting the n-type electrode.Type: GrantFiled: December 18, 2008Date of Patent: April 2, 2013Assignee: Samsung Electronics Co., Ltd.Inventors: Sang Won Kang, Seong Ju Park, Joo Young Cho, Il Kyu Park, Yong Chun Kim, Dong Joon Kim, Jeong Tak Oh, Je Won Kim
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Publication number: 20120129289Abstract: A nitride semiconductor light emitting device, and a method of manufacturing the same are disclosed. The nitride semiconductor light emitting device includes a substrate, an n-type nitride semiconductor layer disposed on the substrate and including a plurality of V-shaped pits in a top surface thereof, an active layer disposed on the n-type nitride semiconductor layer and including depressions conforming to the shape of the plurality of V-shaped pits, and a p-type nitride semiconductor layer disposed on the active layer and including a plurality of protrusions on a top surface thereof. Since the plurality of V-shaped pits are formed in the top surface of the n-type nitride semiconductor layer, the protrusions can be formed on the p-type nitride semiconductor layer as an in-situ process. Accordingly, the resistance to ESD, and light extraction efficiency are enhanced.Type: ApplicationFiled: February 2, 2012Publication date: May 24, 2012Applicant: Samsung LED Co., Ltd.Inventors: Jeong Tak OH, Yong Chun Kim
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Publication number: 20120119187Abstract: The present invention relates to a GaN based nitride based light emitting device improved in Electrostatic Discharge (ESD) tolerance (withstanding property) and a method for fabricating the same including a substrate and a V-shaped distortion structure made of an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer on the substrate and formed with reference to the n-type nitride semiconductor layer.Type: ApplicationFiled: January 25, 2012Publication date: May 17, 2012Applicant: SAMSUNG LED CO., LTDInventors: Sang Won KANG, Yong Chun KIM, Dong Hyun CHO, Jeong Tak OH, Dong Joon KIM
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Publication number: 20120119254Abstract: Provided are a light emitting device, a light emitting device package, and a lighting system. The light emitting device comprises a first conductive type first semiconductor layer, an active layer, a second conductive type second semiconductor layer, a reliability enhancement layer, and a second conductive type third semiconductor layer. The active layer is disposed on the first conductive type first semiconductor layer. The second conductive type second semiconductor layer is disposed on the active layer. The reliability enhancement layer is disposed on the second conductive type second semiconductor layer. The second conductive type third semiconductor layer is disposed on the reliability enhancement layer and comprises a light extraction pattern. The reliability enhancement layer and the active layer are spaced apart from each other by a distance of 0.3 ?m to 5 ?m.Type: ApplicationFiled: January 25, 2012Publication date: May 17, 2012Inventors: Yong Tae MOON, Yong Seon Song, Sung Hoon Jung, Joong Seo Park, Sang Jun Lee, Jeong Tak Oh, Rak Jun Choi