Patents by Inventor Jeong Tak Oh
Jeong Tak Oh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8134170Abstract: A nitride semiconductor light emitting device, and a method of manufacturing the same are disclosed. The nitride semiconductor light emitting device includes a substrate, an n-type nitride semiconductor layer disposed on the substrate and including a plurality of V-shaped pits in a top surface thereof, an active layer disposed on the n-type nitride semiconductor layer and including depressions conforming to the shape of the plurality of V-shaped pits, and a p-type nitride semiconductor layer disposed on the active layer and including a plurality of protrusions on a top surface thereof. Since the plurality of V-shaped pits are formed in the top surface of the n-type nitride semiconductor layer, the protrusions can be formed on the p-type nitride semiconductor layer as an in-situ process. Accordingly, the resistance to ESD, and light extraction efficiency are enhanced.Type: GrantFiled: November 17, 2009Date of Patent: March 13, 2012Assignee: Samsung LED Co., Ltd.Inventors: Jeong Tak Oh, Yong Chun Kim
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Patent number: 8129711Abstract: The present invention relates to a GaN based nitride based light emitting device improved in Electrostatic Discharge (ESD) tolerance (withstanding property) and a method for fabricating the same including a substrate and a V-shaped distortion structure made of an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer on the substrate and formed with reference to the n-type nitride semiconductor layer.Type: GrantFiled: July 11, 2008Date of Patent: March 6, 2012Assignee: Samsung LED Co., Ltd.Inventors: Sang Won Kang, Yong Chun Kim, Dong Hyun Cho, Jeong Tak Oh, Dong Joon Kim
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Publication number: 20120043557Abstract: The present invention provides a semiconductor light-emitting device. The light-emitting device comprises a first conductive clad layer, an active layer, and a second conductive clad layer sequentially formed on a substrate. In the light-emitting device, the substrate has one or more side patterns formed on an upper surface thereof while being joined to one or more edges of the upper surface. The side patterns consist of protrusions or depressions so as to scatter or diffract light to an upper portion or a lower portion of the light-emitting device.Type: ApplicationFiled: November 1, 2011Publication date: February 23, 2012Applicant: SAMSUNG LED CO., LTD.Inventors: Sun Woon KIM, Hyun Kyung KIM, Je Won KIM, In Seok CHOI, Kyu Han LEE, Jeong Tak OH
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Patent number: 8071994Abstract: The present invention provides a semiconductor light-emitting device. The light-emitting device comprises a first conductive clad layer, an active layer, and a second conductive clad layer sequentially formed on a substrate. In the light-emitting device, the substrate has one or more side patterns formed on an upper surface thereof while being joined to one or more edges of the upper surface. The side patterns consist of protrusions or depressions so as to scatter or diffract light to an upper portion or a lower portion of the light-emitting device.Type: GrantFiled: November 23, 2009Date of Patent: December 6, 2011Assignee: Samsung LED Co., Ltd.Inventors: Sun Woon Kim, Hyun Kyung Kim, Je Won Kim, In Seok Choi, Kyu Han Lee, Jeong Tak Oh
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Patent number: 8030640Abstract: A nitride semiconductor light emitting device includes a substrate, a first conductivity type nitride semiconductor layer disposed on the substrate and including a plurality of V-pits placed in a top surface thereof, a silicon compound formed in the vertex region of each of the V-pits, an active layer disposed on the first conductivity type nitride semiconductor layer and including depressions conforming to the shape of the plurality of V-pits, and a second conductivity type nitride semiconductor layer disposed on the active layer. The nitride semiconductor light emitting device, when receiving static electricity achieves high resistance to electrostatic discharge (ESD) since current is concentrated in the V-pits and the silicon compound placed on dislocations caused by lattice defects.Type: GrantFiled: November 13, 2009Date of Patent: October 4, 2011Assignee: Samsung LED Co., Ltd.Inventors: Jeong Tak Oh, Yong Chun Kim, Dong Joon Kim, Dong Ju Lee
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Patent number: 7999274Abstract: A white light emitting device is disclosed. The white light emitting device includes a blue light emitting diode (LED) including a plurality of active layers generating different peak wavelengths, and phosphors emitting yellow light when excited by light emitted from the blue LED. The white light emitting device ensures enhanced excitation efficiency of the phosphors, and high luminance.Type: GrantFiled: November 13, 2009Date of Patent: August 16, 2011Assignee: Samsung LED Co., Ltd.Inventors: Jeong Tak Oh, Yong Chun Kim
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Patent number: 7893443Abstract: Disclosed herein is a nitride-based semiconductor light-emitting device. The nitride-based semiconductor light-emitting device comprises an n-type clad layer made of n-type Alx1Iny1Ga(1-x1-y1)N (where 0?x1?1, 0?y1?1, and 0?x1+y1?1), a multiple quantum well-structured active layer made of undoped InAGa1-AN (where 0<A<1) formed on the n-type clad layer, and a p-type clad layer formed on the active layer wherein the p-type clad layer includes at least a first layer made of p-type Iny2Ga1-y2N (where 0?y2<1) formed on the active layer and a second layer made of p-type Alx3Iny3Ga(1-x3-y3)N (where 0<x3?1, 0?y3?1, and 0<x3+y3?1) formed on the first layer.Type: GrantFiled: April 26, 2006Date of Patent: February 22, 2011Assignee: Samsung LED Co,; Ltd.Inventors: Je Won Kim, Jeong Tak Oh, Dong Joon Kim, Sun Woon Kim, Jin Sub Park, Kyu Han Lee
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Publication number: 20110037086Abstract: Disclosed herein is a nitride-based semiconductor light-emitting device. The nitride-based semiconductor light-emitting device comprises an n-type clad layer made of n-type Alx1Iny1Ga(1-x1-y1)N (where 0?x1?1, 0?y1?1, and 0?x1+y1?1), a multiple quantum well-structured active layer made of undoped InAGa1-AN (where 0<A<1) formed on the n-type clad layer, and a p-type clad layer formed on the active layer wherein the p-type clad layer includes at least a first layer made of p-type Iny2Ga1-y2N (where 0?y2<1) formed on the active layer and a second layer made of p-type Alx3Iny3Ga(1-x3-y3)N (where 0<x3?1, 0?y3?1, and 0<x3+y3?1) formed on the first layer.Type: ApplicationFiled: October 25, 2010Publication date: February 17, 2011Applicant: SAMSUNG LED CO., LTD.Inventors: Je Won KIM, Jeong Tak Oh, Dong Joon Kim, Sun Woon Kim, Jin Sub Park, Kyu Han Lee
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Patent number: 7888670Abstract: There is provided a nitride semiconductor light emitting device including: an n-type semiconductor region; an active layer formed on the n-type semiconductor region; a p-type semiconductor region formed on the active layer; an n-electrode disposed in contact with the n-type semiconductor region; a p-electrode formed on the p-type semiconductor region; and at least one intermediate layer formed in at least one of the n-type semiconductor region and the p-type semiconductor region, the intermediate layer disposed above the n-electrode, wherein the intermediate layer is formed of a multi-layer structure where at least three layers with different band gaps from one another are deposited, wherein the multi-layer structure includes one of an AlGaN layer/GaN layer/InGaN layer stack and an InGaN layer/GaN layer/AlGaN layer stack.Type: GrantFiled: April 14, 2008Date of Patent: February 15, 2011Assignee: Samsung LED Co., Ltd.Inventors: Sang Heon Han, Sang Won Kang, Jeong Tak Oh, Seung Beom Seo, Dong Joon Kim, Hyun Wook Shim
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Patent number: 7807521Abstract: A nitride semiconductor light emitting device and a method of manufacturing the same are disclosed. The nitride semiconductor light emitting device comprises an n-type nitride semiconductor layer formed on a substrate, an active layer formed on the n-type nitride semiconductor layer, a p-type nitride semiconductor layer formed on the active layer, an undoped GaN layer formed on the p-type nitride semiconductor layer, an AlGaN layer formed on the undoped GaN layer to form a two-dimensional electron gas (2DEG) layer at a bonding interface between the AlGaN layer and the undoped GaN layer, and an n-side electrode and a p-side electrode respectively formed on the n-type nitride semiconductor layer and the AlGaN layer to be connected to each other. As a hetero-junction structure of GaN/AlGaN is formed on the p-type nitride semiconductor layer, contact resistance between the p-type nitride semiconductor layer and the p-side electrode is enhanced by virtue of tunneling effect through the 2DEG layer.Type: GrantFiled: January 17, 2008Date of Patent: October 5, 2010Assignee: Samsung Electro-Mechanics Co., Ltd.Inventors: Jae Hoon Lee, Jeong Tak Oh, Jin Sub Park
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Publication number: 20100207097Abstract: A nitride semiconductor light emitting device includes a substrate, a first conductivity type nitride semiconductor layer disposed on the substrate and including a plurality of V-pits placed in a top surface thereof, a silicon compound formed in the vertex region of each of the V-pits, an active layer disposed on the first conductivity type nitride semiconductor layer and including depressions conforming to the shape of the plurality of V-pits, and a second conductivity type nitride semiconductor layer disposed on the active layer. The nitride semiconductor light emitting device, when receiving static electricity achieves high resistance to electrostatic discharge (ESD) since current is concentrated in the V-pits and the silicon compound placed on dislocations caused by lattice defects.Type: ApplicationFiled: November 13, 2009Publication date: August 19, 2010Inventors: Jeong Tak Oh, Yong Chun Kim, Dong Joon Kim, Dong Ju Lee
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Publication number: 20100163899Abstract: A white light emitting device is disclosed. The white light emitting device includes a blue light emitting diode (LED) including a plurality of active layers generating different peak wavelengths, and phosphors emitting yellow light when excited by light emitted from the blue LED. The white light emitting device ensures enhanced excitation efficiency of the phosphors, and high luminance.Type: ApplicationFiled: November 13, 2009Publication date: July 1, 2010Inventors: Jeong Tak Oh, Yong Chun Kim
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Publication number: 20100155704Abstract: A nitride semiconductor light emitting device, and a method of manufacturing the same are disclosed. The nitride semiconductor light emitting device includes a substrate, an n-type nitride semiconductor layer disposed on the substrate and including a plurality of V-shaped pits in a top surface thereof, an active layer disposed on the n-type nitride semiconductor layer and including depressions conforming to the shape of the plurality of V-shaped pits, and a p-type nitride semiconductor layer disposed on the active layer and including a plurality of protrusions on a top surface thereof. Since the plurality of V-shaped pits are formed in the top surface of the n-type nitride semiconductor layer, the protrusions can be formed on the p-type nitride semiconductor layer as an in-situ process. Accordingly, the resistance to ESD, and light extraction efficiency are enhanced.Type: ApplicationFiled: November 17, 2009Publication date: June 24, 2010Inventors: Jeong Tak Oh, Yong Chun Kim
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Patent number: 7692201Abstract: The present invention provides a semiconductor light-emitting device. The light-emitting device comprises a first conductive clad layer, an active layer, and a second conductive clad layer sequentially formed on a substrate. In the light-emitting device, the substrate has one or more side patterns formed on an upper surface thereof while being joined to one or more edges of the upper surface. The side patterns consist of protrusions or depressions so as to scatter or diffract light to an upper portion or a lower portion of the light-emitting device.Type: GrantFiled: April 5, 2005Date of Patent: April 6, 2010Assignee: Samsung Electro-Mechanics Co., Ltd.Inventors: Sun Woon Kim, Hyun Kyung Kim, Je Won Kim, In Seok Choi, Kyu Han Lee, Jeong Tak Oh
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Publication number: 20100065877Abstract: The present invention provides a semiconductor light-emitting device. The light-emitting device comprises a first conductive clad layer, an active layer, and a second conductive clad layer sequentially formed on a substrate. In the light-emitting device, the substrate has one or more side patterns formed on an upper surface thereof while being joined to one or more edges of the upper surface. The side patterns consist of protrusions or depressions so as to scatter or diffract light to an upper portion or a lower portion of the light-emitting device.Type: ApplicationFiled: November 23, 2009Publication date: March 18, 2010Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.Inventors: Sun Woon KIM, Hyun Kyung KIM, Je Won KIM, In Seok CHOI, Kyu Han LEE, Jeong Tak OH
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Publication number: 20100019258Abstract: There is provided a semiconductor light emitting device that can easily dissipate heat, improve current spreading efficiency, and reduce defects by blocking dislocations occurring when a semiconductor layer is grown to thereby increase reliability. A semiconductor light emitting device including a substrate, a light emitting structure having an n-type semiconductor layer, an active layer, and a p-type semiconductor layer sequentially laminated, and an n-type electrode and a p-type electrode formed on the n-type semiconductor layer and the p-type semiconductor layer, respectively, according to an aspect of the invention may include: a metal layer formed in the n-type semiconductor layer and contacting the n-type electrode.Type: ApplicationFiled: December 18, 2008Publication date: January 28, 2010Applicants: SAMSUNG ELECTRO-MECHANICS CO., LTD., GWANGJU INSTITUTE OF SCIENCE AND TECHNOLOGYInventors: Sang Won KANG, Seong Ju Park, Joo Young Cho, Il Kyu Park, Yong Chun Kim, Dong Joon Kim, Jeong Tak Oh, Je Won Kim
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Publication number: 20100019223Abstract: There is provided a nitride semiconductor light emitting device including an active layer of a multi quantum well structure, the nitride semiconductor light emitting device including: a substrate; and a buffer layer, an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer sequentially stacked on the substrate, wherein the active layer is formed of a multi quantum well structure where a plurality of barrier layers and a plurality of well layers are arranged alternately with each other, and at least one of the plurality of barrier layers includes a first barrier layer including a p-doped barrier layer doped with a p-dopant and an undoped barrier layer.Type: ApplicationFiled: December 18, 2008Publication date: January 28, 2010Applicants: SAMSUNG ELECTRO-MECHANICS CO., LTD., GWANGJU INSTITUTE OF SCIENCE AND TECHNOLOGYInventors: Sang Won Kang, Seong Ju Park, Min Ki Kwon, Sang Jun Lee, Joo Young Cho, Yong Chun Kim, Sang Heon Han, Dong Ju Lee, Jeong Tak Oh, Je Won Kim
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Patent number: 7479661Abstract: The invention provides a nitride semiconductor device and a manufacturing method thereof. In the invention, n-type and p-type nitride semiconductor layers are formed on a substrate, and an active layer is formed therebetween. The n-type nitride semiconductor layers include first and second n-type GaN layers disposed in the order of distance from the active layer. In addition, in the nitride semiconductor device of the invention, an AlxGal-xN layer, where 0<x<1, is interposed between the first and second n-type GaN layers, thereby forming a two-dimensional electron gas layer at interfaces of the first and second n-type GaN layers.Type: GrantFiled: May 18, 2006Date of Patent: January 20, 2009Assignee: Samsung Electro-Mechanics Co., Ltd.Inventors: Jae Hoon Lee, Hee Seok Choi, Jeong Tak Oh, Su Yeol Lee
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Publication number: 20090014713Abstract: The present invention relates to a GaN based nitride based light emitting device improved in Electrostatic Discharge (ESD) tolerance (withstanding property) and a method for fabricating the same including a substrate and a V-shaped distortion structure made of an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer on the substrate and formed with reference to the n-type nitride semiconductor layer.Type: ApplicationFiled: July 11, 2008Publication date: January 15, 2009Inventors: Sang Won KANG, Yong Chun Kim, Dong Hyun Cho, Jeong Tak Oh, Dong Joon Kim
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Patent number: 7442569Abstract: Provided are a vertical GaN-based LED and a method of manufacturing the same. The vertical GaN-based LED includes an n-electrode. An AlGaN layer is formed under the n-electrode. An undoped GaN layer is formed under the AlGaN layer to provide a two-dimensional electron gas layer to a junction interface of the AlGaN layer. A GaN-based LED structure includes an n-type GaN layer, an active layer, and a p-type GaN layer that are sequentially formed under the undoped GaN layer. A p-electrode is formed under the GaN-based LED structure. A conductive substrate is formed under the p-electrode.Type: GrantFiled: July 25, 2007Date of Patent: October 28, 2008Assignee: Samsung Electro-Mechanics Co., Ltd.Inventors: Jae Hoon Lee, Hee Seok Choi, Jeong Tak Oh, Su Yeol Lee