Abstract: A semiconductor device and a method for driving the same rapidly detect failure of a through-semiconductor-chip via and effectively repairing the failure using a latching unit assigned to each through-semiconductor-chip via. The semiconductor device includes a plurality of semiconductor chips that are stacked, and a plurality of through-semiconductor-chip vias to commonly transfer a signal to the plurality of semiconductor chips, wherein each of the semiconductor chips includes a multiplicity of latching units assigned to the through-semiconductor-chip vias and the multiplicity of latching units of each of the semiconductor chips constructs a boundary scan path including the plurality of through-semiconductor-chip vias to sequentially transfer test data.

Abstract: An apparatus for providing vehicle information receives protocol information of an in-vehicle network, extracts a data analysis file corresponding to a protocol type among a plurality of pre-stored data analysis files, receives from the in-vehicle network, source data that contains a plurality of pieces of vehicle information, and extracts partial vehicle information from the source data according to the data analysis file.

Abstract: A semiconductor system includes a controller; a semiconductor device comprising a plurality of stacked semiconductor chips stacked over the controller, and a plurality of through-silicon vias (TSVs) configured to commonly transfer a signal to the plurality of stacked semiconductor chips; and a defect information transfer TSV configured to transfer TSV defect information sequentially outputted from at least one of the semiconductor chips to the controller, wherein the controller comprises: a plurality of first repair fuse units configured to set first fuse information based on the TSV defect information; and a plurality of first TSV selection units configured to selectively drive the TSVs in response to the first fuse information.

Abstract: A storage device comprises at least one nonvolatile memory and a lock mode management module. The lock mode management module places the storage device in a soft lock mode in which only predetermined writing operations are allowed, upon determining that a number of reserved blocks in a flash memory is less than or equal to a reference value.

Abstract: Provided are a coded block pattern (CBP) estimating method which is performed using an average value and a dispersion value between blocks of CBPs in a moving picture encoder for IP-TVs (Internet Protocol-Televisions), and a block mode decision method, which can determine all block modes with only the first 16×16 block. Accordingly, since an additional operation for mode determination is not necessary, an amount of calculation and thus a calculation time can be remarkably reduced.

Abstract: A semiconductor device includes a plurality of stacked semiconductor chips; and a plurality of through-silicon vias (TSVs) including first TSVs and redundant TSVs and configured to commonly transfer a signal to the plurality of stacked semiconductor chips. At least one of the semiconductor chips includes a plurality of repair fuse units configured to store defect information as to at least one defect of the TSVs; and a plurality of latch units allocated to the respective TSVs and configured to store a plurality of signals indicating at least one TSV defect and outputted from the plurality of repair fuse units.

Abstract: A method of fabricating a solar cell is disclosed. The solar cell fabricating method includes forming a first transparent conductive layer on a transparent substrate, texturing an upper surface of the first transparent conductive layer using an etchant solution configured to contain an acid with a molecular weight of about 58˜300, forming a photoelectric conversion layer on the first transparent conductive layer, forming a second transparent conductive layer on the photoelectric conversion layer, and forming a rear electrode on the second transparent conductive layer.

Abstract: A method of controlling a non-volatile memory device includes comparing the number of banks that are in operating states with a threshold value. If the number of the banks is smaller than the threshold value, data stored in a standby bank is read. If there is no bank having data to be read, a standby bank is programmed. If the number of the banks is equal to or greater than the threshold value or if the reading or the programming is performed, it is determined whether there is a reading or programming command to be performed. If there is the reading or programming command to be performed, the process is repeated from the comparing step. The programming may include programming of a most significant bit (MSB) page or a least significant bit (LSB) page.

Abstract: A conductive polymer, a conductive polymer composition, a conductive polymer organic film, and an organic photoelectric device including the same, the conductive polymer including repeating units represented by the following Chemical Formula 1, repeating units represented by the following Chemical Formula 2, and repeating units represented by the following Chemical Formula 3:

Abstract: One embodiment of a method includes loading, by a memory controller, a boot image from a solid state drive to an operating memory of a computing system during an initialization operation of the computing system. The initialization operation initializes components of the computing system.

Abstract: In one embodiment, the method includes storing, by a status checking module, status information for a solid state drive, and determining a status state of the solid state drive based on the status information. The status state is one of a good state, an intermediate state and a bad state, and the intermediate state is a state between the good state and the bad state.

Abstract: Provided is a holder device for analyzing characteristics of a dosimeter. In the holder device, the dosimeter is located in a desired direction on a radiation path along which radiation is irradiated from a radiation emitter, and a radiation absorbance characteristic is recognized according to a radiation dose absorbed by the dosimeter. The holder device includes: a dosimeter holder fixedly supporting the dosimeter; a body having a partial spherical portion with a specific curvature, and having a plurality of mounting holes containing the dosimeter holder; and a supporter supporting the body so that the dosimeter is located on the radiation path. Accordingly, in the holder device for analyzing characteristics of a dosimeter, one or more dosimeters can be disposed at a desired angle and position with respect to a radiation emitter, characteristics of the dosimeter can be accurately analyzed, and thus radiation treatment and treatment schedule can be effectively performed.

Abstract: A flash memory-based storage grouped into memory regions is controlled by determining whether the flash memory is accessed or not. Power to a first of the memory regions is controlled according to the determination result. Power to a second of the memory regions is controlled according to the determination result. Controlling includes enabling provision of power to the first memory region while concurrently denying power to the second memory region.

Abstract: The present general inventive concept relates to apparatuses and/or methods for measuring an in-phase and quadrature (IQ) imbalance. In one embodiment, a detector can measure an error caused by an IQ imbalance using a first IQ signal including a desired signal and a corresponding image signal by the IQ imbalance. The detector can include a derotator to derotate the first IQ signal by a first angular frequency to obtain a second IQ signal and derotate the first IQ signal by a second angular frequency to obtain a third IQ signal, a DC estimator to obtain a fourth IQ signal corresponding to a DC component of the second IQ signal and a fifth IQ signal corresponding to a DC component of the third IQ signal and a controller can determine a gain error or a phase error from the fourth IQ signal and the fifth IQ signal.

Abstract: Embodiments of the inventive concept provide a nonvolatile memory device. The nonvolatile memory device includes a memory cell array, a read/write circuit, and a backup circuit. The memory cell array includes a first memory block including a first word line having first memory cells and a second word line having second memory cells. Each of the first memory cells and second memory cells configured to store first-bit data and second-bit data. The read/write circuit is configured to program data into the first and second memory cells and read data stored in the first and second memory cells.

Abstract: The present general inventive concept relates to apparatuses and/or methods for measuring an in-phase and quadrature (IQ) imbalance. In one embodiment, a signal generator can provide a first IQ signal of a DC component during a first period and the first IQ signal of a first angular frequency during a second period, an IQ up-conversion mixer can up-convert the first IQ signal by a second angular frequency during the first period and up-convert the first IQ signal by a third angular frequency during the second period to output a second IQ signal, an IQ down-conversion mixer can down-convert the second IQ signal by the third angular frequency to output a third IQ signal and an IQ imbalance detector can obtain a first IQ imbalance (e.g., Rx IQ imbalance) from the third IQ signal during the first period and a second IQ imbalance (e.g., Tx/Rx IQ imbalance) during the second period.

Abstract: A system and method for searching a mapping table of a flash memory is provided. The system includes at least one random access memory for storing the mapping table retrieved from the flash memory and at least one search engine for searching for data from the mapping table stored in the at least one random access memory using dedicated hardware. Thus, the search efficiency for the mapping table and system performance may be increased.

Abstract: A current pumping circuit includes a voltage detector, a boost circuit, and an output circuit. The voltage detector detects a level of a power voltage and outputs a corresponding control signal. The boost circuit controls the power voltage to be maintained at a predetermined level based on the control signal. The output circuit provides an output signal regardless of the level of the detected voltage. The output circuit may include or be coupled to a data converter, which generates the output signal based on a transmission signal and the boosted power voltage. The transmission signal may be one output from a predetermined control circuit.

Abstract: A repair circuit of a semiconductor apparatus includes a plurality of through-silicon vias including repeated sets of one repair through-silicon via and an M number of normal through-silicon vias; a transmission unit configured to multiplex input data at a first multiplexing rate based on control signals, and transmit the multiplexed data to the plurality of through-silicon vias; a reception unit configured to multiplex signals transmitted through the plurality of through-silicon vias at a second multiplexing rate based on the control signals, and generate output data; and a control signal generation unit configured to generate sets of the control signals based on an input number of a test signal.

Abstract: This disclosure relates to a positive photosensitive resin composition including (A) a resin precursor including a polybenzoxazole precursor, a polyamic acid, or a combination thereof, (B) a dissolution-controlling agent having a boiling point ranging from about 210° C. to about 400° C. and a polarity ranging from about 1D to about 4D, (C) an acid generator, (D) a silane-based compound, and (E) a solvent. The polybenzoxazole precursor includes a repeating unit represented by Chemical Formula 1, or both of repeating units represented by Chemical Formulae 1 and 2 and has a thermally polymerizable functional group at least one end. The polyamic acid includes a repeating unit of Chemical Formulae 50 and 51.