Abstract: An optical device is provided. The optical device includes: a lens including first and second reflective members; and a flexible display device including a first display area disposed on a first side surface of the lens and a second display area disposed on a second side surface of the lens, wherein the first reflective member is configured to reflect a first image displayed on the first display area to a first surface of the lens, and the second reflective member is configured to reflect a second image displayed on the second display area to the first surface of the lens.

Abstract: A optical device includes: a display device configured to output a display image; a lens on one side of the display device; and a polarization control unit between the display device and the lens and configured to output the display image output from the display device as first polarized light or second polarized light, wherein the lens comprises: a first polarizing mirror configured to reflect a display image of the first polarized light and to transmit a display image of the second polarized light; and a second polarizing mirror configured to reflect a display image of the second polarized light and to transmit a display image of the first polarized light.

Abstract: A method of detecting defects of a glass substrate includes cutting a glass mother substrate into a plurality of glass substrates, penetrating ions into an incision surface of the glass substrate to visualize defects of the incision surface, and photographing the defects of the incision surface to determine a bending strength of the glass substrate based on a size of the defects.

Abstract: The present invention relates to a light extraction substrate for an organic light emitting element, a method for manufacturing the same, and an organic light emitting element comprising the same and, more particularly, to a light extraction substrate for an organic light emitting element exhibiting a good light extraction efficiency, a method for manufacturing the same, and an organic light emitting element comprising the same. To this end, the present invention provides a light extraction substrate for an organic light emitting element, a method for manufacturing the same, and an organic light emitting element comprising the same, the light extraction substrate comprising a first light extraction layer having a plurality of pores formed therein and made of a first metal oxide doped with a dopant; and a second light extraction layer formed on the first light extraction layer and made of a second metal oxide which has a different atomic diffusion rate compared to the first metal oxide.

Abstract: Provided is a semiconductor device and a semiconductor system. A semiconductor device can include a command priority policy manager circuit which generates command priority policy information including a command priority compliance policy for a command directed to a device. A host interface circuit, can be coupled to the command priority policy manager circuit to receive the command priority policy information from the command priority policy manager circuit, where the host interface circuit operable to transmit the command priority policy information via an electrical interface to the device.

Abstract: An operation method is for a storage device that includes a storing unit storing a plurality of error logs and a physical layer and exchanges an electrical signal with a host via the physical layer. The operation method includes receiving a debugging command from the host, setting a first value at a first attribute included in the physical layer in response to the debugging command, setting a second value different from the first value at the first attribute in response to a control of the host, setting one among the plurality of error logs at a second attribute based on the first attribute at which the second value is set, and transmitting the error log set at the second attribute to the host in response to a control of the host.

Abstract: A barrier film and a method of manufacturing the barrier film are provided. The method includes performing high-pressure thermal treatment under certain conditions on an oxide thin film deposited by sputtering deposition or atomic layer deposition (ALD) to manufacture a barrier film with improved moisture resistance. According to the method, moisture resistance of the barrier film can be improved at a low process temperature by using both thermal energy and pressure energy. The barrier film provided herein can be useful as a barrier film for solar cells.

Abstract: Disclosed are an oxide thin film transistor and a method of fabricating the same. The oxide thin film transistor according to an embodiment of the present disclosure includes a gate electrode formed on a substrate, a gate insulating layer formed on the gate electrode, an oxide semiconductor layer as a semiconductor active layer, and source and drain electrodes formed on the oxide semiconductor layer. The oxide semiconductor layer is activated by heat of less than 300° C. and a change in the magnetic flux of an applied magnetic field. More specifically, the activation proceeds by activation energy provided by Joule heat generated from eddy current occurring in the oxide semiconductor layer by a change in the magnetic flux, and the heat of less than 300° C.

Abstract: A method of detecting defects of a glass substrate includes cutting a glass mother substrate into a plurality of glass substrates, penetrating ions into an incision surface of the glass substrate to visualize defects of the incision surface, and photographing the defects of the incision surface to determine a bending strength of the glass substrate based on a size of the defects.

Abstract: A barrier film and a method of manufacturing the barrier film are provided. The method includes performing high-pressure thermal treatment under certain conditions on an oxide thin film deposited by sputtering deposition or atomic layer deposition (ALD) to manufacture a barrier film with improved moisture resistance. According to the method, moisture resistance of the barrier film can be improved at a low process temperature by using both thermal energy and pressure energy. The barrier film provided herein can be useful as a barrier film for solar cells.

Abstract: A method of manufacturing strengthened glass includes: preparing glass including blocking patterns on a surface thereof, portions of the surface exposed between the blocking patterns; forming a metal particle layer on the portions of the surface of the glass exposed between the blocking patterns; removing the blocking patterns from the surface of the glass, to maintain the metal particle layer on the surface of the glass; with the metal particle layer maintained on the surface of the glass, etching the surface of the glass using the metal particle layer as an etching mask to form an etched surface of the glass, such etched surface including protruding patterns spaced apart from each other by portions of a common reference surface; and chemically strengthening the etched surface of the glass at the protruding patterns and at the reference surface.

Abstract: Provided herein is a Schottky diode including: a first semiconductor layer; an intermediate layer provided over the first semiconductor layer; a second semiconductor layer provided over the intermediate layer; an anode provided over the second semiconductor layer; and a cathode provided over the first semiconductor layer, wherein in a sectional view, a width of the second semiconductor layer is greater than a width of the intermediate layer.

Abstract: A storage system shares a system memory of a host. An operation method of the storage system may include receiving a command including information about a shared memory from the host, receiving a stream command having no timeout from the host, and transmitting a first packet associated with the stream command to the host in response to the received stream command. The first packet includes information for accessing the shared memory.

Abstract: A coil unit for a thin film inductor includes an insulating material having double insulating layers of a first and a second insulating layers; and a plurality of coil patterns formed to be embedded in the insulating material. At least one coil pattern among the coil patterns has a thickness different from a thickness of rest of the coil patterns.

Abstract: The present invention relates to a light extraction substrate for an organic light-emitting element, a method for manufacturing the same and an organic light-emitting element including the same, which can shed its dependence on light extraction in a specific wavelength range appearing in a light determining pattern of a cyclical form and induce light extraction in a broader wavelength range. To this end, the present invention relates to a light extraction substrate for an organic light-emitting element, a method for manufacturing the same and an organic light-emitting element including the same.

Abstract: Provided herein is a Schottky diode including: a first semiconductor layer; an intermediate layer provided over the first semiconductor layer; a second semiconductor layer provided over the intermediate layer; an anode provided over the second semiconductor layer; and a cathode provided over the first semiconductor layer, wherein in a sectional view, a width of the second semiconductor layer is greater than a width of the intermediate layer.

Abstract: Disclosed are an oxide thin film transistor and a method of fabricating the same. The oxide thin film transistor according to an embodiment of the present disclosure includes a gate electrode formed on a substrate, a gate insulating layer formed on the gate electrode, an oxide semiconductor layer as a semiconductor active layer, and source and drain electrodes formed on the oxide semiconductor layer. The oxide semiconductor layer is activated by heat of less than 300° C. and a change in the magnetic flux of an applied magnetic field. More specifically, the activation proceeds by activation energy provided by Joule heat generated from eddy current occurring in the oxide semiconductor layer by a change in the magnetic flux, and the heat of less than 300° C.

Abstract: The inventive concept relates to a thin film activation method, a thin film transistor fabrication method, and a substrate processing device, and more particularly, to a method of activating a thin film by using electrical energy, a method of fabricating a thin film transistor, and a device of processing a substrate. The thin film activation method according to an embodiment of the inventive concept may include supplying electrical energy to a thin film.

Abstract: Disclosed herein is a photomixer and method of manufacturing the photomixer which can fundamentally solve the existing restrictive factors of a PCA and a photomixer which are core parts of a conventional broadband terahertz spectroscopy system. The presented photomixer includes an active layer formed on a top surface of a substrate, the active layer being formed on an area on which light is incident, and a thermal conductive layer formed on the top surface of the substrate, the thermal conductive layer being formed on an area other than the area on which light is incident. The active layer is formed to have a mesa cross section, and the thermal conductive layer is regrown on an area other than the area on which light is incident using an MOCVD method, and has a flattened surface.

Abstract: A storage device comprising: at least one nonvolatile memory; a buffer; and a memory controller configured to: receive data from a host; store the data in the buffer; and flush the data in the buffer to the at least one nonvolatile memory in response to an absence of communication with the host for a reference time duration.