Patents by Inventor Jeong-Yun Lee

Jeong-Yun Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10559565
    Abstract: An integrated circuit (IC) device includes a first and a second fin-type active region protruding from a first region and a second region, respectively, of a substrate, a first and a second gate line, and a first and a second source/drain region. The first fin-type active region has a first top surface and a first recess has a first depth from the first top surface. The first source/drain region fills the first recess and has a first width. The second fin-type active region has a second top surface and a second recess has a second depth from the second top surface. The second depth is greater than the first depth. The second source/drain region fills the second recess and has a second width. The second width is greater than the first width.
    Type: Grant
    Filed: February 28, 2019
    Date of Patent: February 11, 2020
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jung-han Lee, Sun-ghil Lee, Myung-il Kang, Jeong-yun Lee, Seung-hun Lee, Hyun-jung Lee, Sun-wook Kim
  • Publication number: 20200027895
    Abstract: A semiconductor device includes an active fin on a substrate, a gate electrode and intersecting the active fin, gate spacer layers on both side walls of the gate electrode, and a source/drain region in a recess region of the active fin at at least one side of the gate electrode. The source/drain region may include a base layer in contact with the active fin, and having an inner end and an outer end opposing each other in the first direction on an inner sidewall of the recess region. The source/drain region may include a first layer on the base layer. The first layer may include germanium (Ge) having a concentration higher than a concentration of germanium (Ge) included in the base layer. The outer end of the base layer may contact the first layer, and may have a shape convex toward outside of the gate electrode on a plane.
    Type: Application
    Filed: February 11, 2019
    Publication date: January 23, 2020
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Namkyu Edward CHO, Seok Hoon KIM, Myung II KANG, Geo Myung SHIN, Seung Hun LEE, Jeong Yun LEE, Min Hee CHOI, Jeong Min CHOI
  • Publication number: 20200004054
    Abstract: A liquid crystal display includes a first substrate including: a display area including a plurality of pixels on the first substrate, a non-display area which is disposed on an outside of the display area and in which a dummy wire is disposed on the first substrate, and an image input hole which is defined therein in the non-display area and in which an image input device is disposed, a second substrate facing the first substrate and including a display area and a non-display area corresponding to those of the first substrate, a liquid crystal layer interposed between the first and second substrates, and a sealant which is in the non-display area of the first and second substrates and seals the liquid crystal layer between the first and second substrates. The dummy wire is disposed near the image input hole.
    Type: Application
    Filed: September 9, 2019
    Publication date: January 2, 2020
    Inventors: Tae Hee LEE, Hyoung Joon KIM, Hyo Jin KIM, Kap Soo YOON, Jeong Uk HEO, Ji Yun HONG
  • Patent number: 10522616
    Abstract: A semiconductor device includes: a fin-type active region protruding from a substrate and extending in a first direction; at least one nano-sheet spaced apart from an upper surface of the fin-type active region and facing the upper surface of the fin-type active region, the at least one nano-sheet having a channel region; a gate extending on the fin-type active region in a second direction crossing the first direction and surrounding at least a portion of the at least one nano-sheet; a source/drain region on the fin-type active region on both sides of the at least one nano-sheet; and a source/drain protection layer on a sidewall of the at least one nano-sheet and between the source/drain region and the at least one nano-sheet.
    Type: Grant
    Filed: November 28, 2017
    Date of Patent: December 31, 2019
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Edward Nam-kyu Cho, Tae-soon Kwon, Bo-ra Lim, Jeong-yun Lee
  • Publication number: 20190367741
    Abstract: An emulsion, a method of preparing an emulsion, and a method of forming a coating film using an emulsion are provided. The emulsion includes latex particles, wherein each of the latex particles comprises a core portion formed of a polymer matrix having an internal network structure, and a shell portion which surrounds the core portion.
    Type: Application
    Filed: March 14, 2018
    Publication date: December 5, 2019
    Inventors: Dae Won Cho, Hee Yun Kim, Tae Hoon Yeum, Su Jin Lee, Jeong Hyun Choi
  • Patent number: 10494346
    Abstract: The present invention relates to a novel pyrimidine-4-carboxylic acid derivative having an anticancer activity, and the compound thereof is useful as a drug for treating and preventing tumor diseases, wherein the compound is represented by the Formula 1: or a pharmaceutically acceptable salt thereof, wherein: Q is a C6-C15 aryl group; or a C4-C13 heteroaryl group, wherein the heteroaryl contains 1, 2 or 3 heteroatoms substituted with 1-3 heteroatom(s) selected from the group consisting of nitrogen, oxygen or sulfur; R is a halogen; a C1-C10 haloalkyl substituted with 1-13 halogen atom(s); a C1-C10 alkoxy; a 5- or 6-membered heterocycloalkyl or (CH2)r-R1 wherein the heterocycloalkyl contains 1-2 heteroatom(s) selected from the group consisting of nitrogen and oxygen; R1 is a hydrogen; a C1-C10 alkoxy; amino; mono(C1-C10 alkyl)amino; di(C1-C10 alkyl)amino; or —NHC(O)-phenyl; n is 1, 2, 3, 4, 5, or 6; and r is 0, 1, 2, 3, 4, 5, or 6; and m is 0, 1, 2 or 3.
    Type: Grant
    Filed: March 30, 2017
    Date of Patent: December 3, 2019
    Assignees: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY, INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY
    Inventors: Tae Bo Sim, Woo Young Hur, Ho Jong Yoon, Chi Man Song, In Jae Shun, Byeong Yun Lim, Han Na Cho, Seung Hye Choi, Gu Kong, Jeong Yeon Lee
  • Publication number: 20190358283
    Abstract: The present invention provides a pharmaceutical composition for preventing or treating cancer, a food composition for enhancing immune functions, and a pharmaceutical composition for preventing or treating cachexia. The composition of the present invention provides effects of further inhibiting the growth of tumors, increasing immunological activity, and suppressing cachexia caused by tumors. In addition, the composition of the present invention can obtain a synergistic effect when co-administered with an existing anticancer drug.
    Type: Application
    Filed: January 16, 2019
    Publication date: November 28, 2019
    Inventors: Sae Kwang KU, Seong Min KU, Tae Hun KU, Chul Jong JUNG, Gyung Yun BEIK, Jin Gi SHIN, Sang Soo LEE, Jeong Gyun SEO, Chil Surk YOON, Xian LI
  • Patent number: 10489598
    Abstract: A system for diagnosing and analyzing infrastructure, comprising: a storage unit storing a diagnostic script, which is for collecting system information from a target system or at least one target operating server of the target system; a script transmission unit transmitting the diagnostic script to the target system to diagnose the target system; a system information collection unit receiving the system information from the target system or the at least one target operating server as a result of the running of the diagnostic script; an analysis engine storage unit storing at least one analysis rule corresponding to the target system or the at least one target operating server; and an analysis information generation unit analyzing the system information by using the analysis rule, and generating analysis information regarding the target system and the at least one target operating server based on the results of the analyzing.
    Type: Grant
    Filed: March 2, 2017
    Date of Patent: November 26, 2019
    Assignee: SAMSUNG SDS CO., LTD.
    Inventors: In Chul Han, Seung Youl Maeng, Sung Hwan Choi, Min Ho Sung, Ji Yun Lee, Do San Pyun, Young Beom Seo, Seong Dae Song, Eun Young Kim, Sung Soon Hong, Jeong A Choi, Yoo Mi Kwon, Chang Won Park, Mun Hwan Kim
  • Publication number: 20190352441
    Abstract: An alkali-soluble resin, a method of preparing an alkali-soluble resin, and an emulsion polymer including an alkali-soluble resin are provided. The alkali-soluble resin includes a first monomer including at least one of an acrylic monomer, a methacrylic monomer, and a styrene-based monomer and having no allyl group; and a second monomer having an allyl group, wherein the alkali-soluble resin is prepared by polymerizing the first monomer and the second monomer.
    Type: Application
    Filed: January 18, 2018
    Publication date: November 21, 2019
    Inventors: Su Jin Lee, Hee Yun Kim, Tae Hoon Yeum, Dae Won Cho, Jeong Hyun Choi
  • Publication number: 20190352493
    Abstract: An emulsion, and a method of preparing an emulsion are provided. The emulsion includes styrene/acrylic latex particles and a metal stearate-based material.
    Type: Application
    Filed: January 29, 2018
    Publication date: November 21, 2019
    Inventors: Hee Yun Kim, Tae Hoon Yeum, Su Jin Lee, Dae Won Cho, Jeong Hyun Choi
  • Publication number: 20190348414
    Abstract: A semiconductor device has active fins defined by an isolation pattern on a substrate, each of the active fins extending in a first direction, and the active fins being spaced apart from each other in a second direction crossing the first direction, a gate electrode extending in the second direction on the active fins and the isolation pattern, and an isolation structure on a portion of the isolation pattern between the active fins neighboring with each other in the second direction. The isolation structure includes a first pattern having a first material and a second pattern having a second material different from the first material. The second pattern covers a lower surface and a lower side surface of the first pattern but not an upper side surface of the first pattern.
    Type: Application
    Filed: December 11, 2018
    Publication date: November 14, 2019
    Inventors: Seung-Soo HONG, Bo-Ra LIM, Geum-Jung SEONG, Young-Mook OH, Jeong-Yun LEE, Ah-Reum JI
  • Publication number: 20190330427
    Abstract: An emulsion particle, an emulsion including the same, and a method of manufacturing an emulsion are provided. The emulsion particle includes: a core derived from a polymer of an unsaturated ethylenic monomer and including a first sub core and a second sub core surrounding the first sub core; and a shell surrounding the core and including an alkali-soluble resin, wherein the first sub core includes a polymer having a first glass transition temperature, and the second sub core includes a polymer having a second glass transition temperature lower than the first glass transition temperature.
    Type: Application
    Filed: December 29, 2017
    Publication date: October 31, 2019
    Inventors: Jeong Hyun CHOI, Hee Yun KIM, Tae Hoon YEUM, Su Jin LEE, Dae Won CHO
  • Publication number: 20190333812
    Abstract: A semiconductor device includes a fin type pattern extending in a first direction on a substrate, a field insulating layer on the substrate, the field insulating layer wrapping a side wall of the fin type pattern, a gate electrode on the fin type pattern, the gate electrode extending in a second direction intersecting with the first direction, a first spacer on a side wall of a lower part of the gate electrode, and an etching stop layer extending along a side wall and an upper surface of an upper part of the gate electrode, along a side wall of the first spacer, and along an upper surface of the field insulating layer.
    Type: Application
    Filed: December 7, 2018
    Publication date: October 31, 2019
    Inventors: Geum Jung Seong, Seung Soo Hong, Young Mook Oh, Jeong Yun Lee
  • Publication number: 20190326180
    Abstract: A semiconductor device capable of improving operation performance and reliability, may include a gate insulating support to isolate gate electrodes that are adjacent in a length direction.
    Type: Application
    Filed: July 2, 2019
    Publication date: October 24, 2019
    Inventors: Sang Hyun LEE, Jeong Yun LEE, Seung Ju PARK, Geum Jung SEONG, Young Mook OH, Seung Soo HONG
  • Patent number: 10437113
    Abstract: A liquid crystal display includes a first substrate including: a display area including a plurality of pixels on the first substrate, a non-display area which is disposed on an outside of the display area and in which a dummy wire is disposed on the first substrate, and an image input hole which is defined therein in the non-display area and in which an image input device is disposed, a second substrate facing the first substrate and including a display area and a non-display area corresponding to those of the first substrate, a liquid crystal layer interposed between the first and second substrates, and a sealant which is in the non-display area of the first and second substrates and seals the liquid crystal layer between the first and second substrates. The dummy wire is disposed near the image input hole.
    Type: Grant
    Filed: January 15, 2016
    Date of Patent: October 8, 2019
    Assignee: SAMSUNG DISPLAY CO., LTD.
    Inventors: Tae Hee Lee, Hyoung Joon Kim, Hyo Jin Kim, Kap Soo Yoon, Jeong Uk Heo, Ji Yun Hong
  • Patent number: 10433028
    Abstract: There are provided an apparatus and method for tracking temporal variation of a video content context using dynamically generated metadata, wherein the method includes generating static metadata on the basis of internal data held during an initial publication of video content and tagging the generated static metadata to the video content, collecting external data related to the video content generated after the video content is published, generating dynamic metadata related to the video content on the basis of the collected external data and tagging the generated dynamic metadata to the video content, repeating regeneration and tagging of the dynamic metadata with an elapse of time, tracking a change in content of the dynamic metadata, and generating and providing a trend analysis report corresponding to a result of tracking the change in the content.
    Type: Grant
    Filed: November 22, 2017
    Date of Patent: October 1, 2019
    Assignee: Electronics and Telecommunications Research Institute
    Inventors: Won Joo Park, Jeong Woo Son, Sang Kwon Kim, Sun Joong Kim, Sang Yun Lee
  • Publication number: 20190295889
    Abstract: A semiconductor device with improved product reliability and a method of fabricating the semiconductor are provided. The semiconductor device includes a substrate, a gate electrode on the substrate, a first spacer on a sidewall of the gate electrode, a conductive contact on a sidewall of the first spacer to protrude beyond a top surface of the gate electrode, a trench defined by the top surface of the gate electrode, a top surface of the first spacer, and sidewalls of the contact, an etching stop layer extending along at least parts of sidewalls of the trench and a bottom surface of the trench, and a capping pattern on the etching stop layer to fill the trench, wherein the capping pattern includes silicon oxide or a low-k material having a lower permittivity than silicon oxide.
    Type: Application
    Filed: October 31, 2018
    Publication date: September 26, 2019
    Inventors: Keun Hee BAI, Sung Woo KANG, Kee Sang KWON, Dong Seok LEE, Sang Hyun LEE, Jeong Yun LEE, Yong-Ho JEON
  • Publication number: 20190288065
    Abstract: A semiconductor device includes fin patterns on a substrate, at least one gate electrode intersecting the fin patterns, source/drain regions on upper surfaces of the fin patterns, and at least one blocking layer on a sidewall of a first fin pattern of the fin patterns, the at least one blocking layer extending above an upper surface of the first fin pattern of the fin patterns, wherein a first source/drain region of the source/drain regions that is on the upper surface of the first fin pattern has an asymmetric shape and is in direct contact with the at least one blocking layer.
    Type: Application
    Filed: May 30, 2018
    Publication date: September 19, 2019
    Inventors: Namkyu Edward CHO, Seung Soo HONG, Geum Jung SEONG, Seung Hun LEE, Jeong Yun LEE
  • Patent number: 10395990
    Abstract: A semiconductor device capable of improving operation performance and reliability, may include a gate insulating support to isolate gate electrodes that are adjacent in a length direction.
    Type: Grant
    Filed: September 28, 2017
    Date of Patent: August 27, 2019
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Sang Hyun Lee, Jeong Yun Lee, Seung Ju Park, Geum Jung Seong, Young Mook Oh, Seung Soo Hong
  • Publication number: 20190245076
    Abstract: A semiconductor device includes a substrate having a fin active region pattern having a protruding shape, a device isolation layer pattern covering a side surface of a lower portion of the fin active region pattern, a spacer pattern covering a side surface of a portion of the fin active region pattern that protrudes from a top surface of the device isolation layer pattern, and a source/drain region in contact with a top surface of the fin active region pattern and a top surface of the spacer pattern.
    Type: Application
    Filed: September 13, 2018
    Publication date: August 8, 2019
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Geum-jung SEONG, Bo-ra LIM, Jeong-yun LEE, Ah-reum JI