Abstract: A decoration element is described. The decoration element includes a light reflective layer; a light absorbing layer provided on the light reflective layer; and a color developing layer comprising a color film, wherein the color developing layer is provided: on a surface of the light reflective layer opposite to a surface of the light reflective layer facing the light absorbing layer; between the light reflective layer and the light absorbing layer; or on a surface of the light absorbing layer opposite to a surface of the light absorbing layer facing the light reflective layer.

Abstract: A vehicle restart control apparatus includes a processor configured to generate an override torque according to the environment information of the host vehicle when the vehicle is restarted after stopping; and a storage configured to store data and algorithms driven by the processor.

Abstract: An image sensing device includes: a control circuit coupled between an output terminal of a pixel signal and a high voltage terminal, and configured to generate a control voltage corresponding to a voltage level of the pixel signal; and a current supplying circuit coupled between the output terminal and the high voltage terminal, and configured to supply a pre-charge current, which is configured to be adaptively adjusted according to the voltage level of the pixel signal, to the output terminal based on the control voltage.

Abstract: The present disclosure relates to an organic electroluminescent compound and an organic electroluminescent device comprising the same. By comprising the compound according to the present disclosure, it is possible to produce an organic electroluminescent device having improved driving voltage, power efficiency, and/or lifetime properties compared to the conventional organic electroluminescent devices.

Abstract: An infrared heat source module is configured to minimize problems such as wrinkles or cracks in electrodes even if the patterns of a coated part and an uncoated part of the electrodes present in a current collector vary. The module improves a drying efficiency of the coated part of the current collector. An electrode using the infrared heat source module is manufactured by a process.

Abstract: A display includes: a display panel; and a panel bottom sheet disposed below the display panel, the panel bottom sheet including: a first heat dissipation layer; a second heat dissipation layer over the first heat dissipation layer, including a first opening formed completely through the second heat dissipation layer in a thickness direction; a heat dissipation coupling interlayer between the first heat dissipation layer and the second heat dissipation layer, and a heat dissipation substrate on the second heat dissipation layer.

Abstract: An electronic device includes a target address generation circuit configured to generate a counting signal by counting the number of times each logic level combination of an address is input by performing an internal read operation and an internal write operation during an active operation, configured to store the counting signal as the storage counting signal when the counting signal is counted more than a storage counting signal that is stored therein, and configured to store the address, corresponding to the counting signal, as a target address; and a refresh control circuit configured to control a smart refresh operation on the target address.

Abstract: The present disclosure relates to a decoration member comprising: a color expression layer comprising a light reflection layer and a light absorption layer provided on the light reflection layer; and a substrate provided on one surface of the color expression layer, in which the light absorption layer comprises a copper nickel oxide (CuaNibOx).

Abstract: Provided is a method for electrowinning neodymium compound. The method includes providing a fluoride-based electrolyte through an opening defined in an electrolytic bath including a cathode and an anode. The method includes providing granules, each including a neodymium compound and having at least one cavity defined therein, through the opening defined in the electrolytic bath. The method includes dissolving at least a portion of the granule in a molten salt of the fluoride-based electrolyte. The method also includes reducing neodymium at the cathode. The cavity is defined inside or on the surface of the granule, and the apparent density of the granules is lower than the density of the molten salt. The method proposed has an improved process compared to those of the related art.

Abstract: Exemplary deposition methods may include delivering a boron-containing precursor and a nitrogen-containing precursor to a processing region of a semiconductor processing chamber. The methods may include providing a hydrogen-containing precursor with the boron-containing precursor and the nitrogen-containing precursor. A flow rate ratio of the hydrogen-containing precursor to either of the boron-containing precursor or the nitrogen-containing precursor may be greater than or about 2:1. The methods may include forming a plasma of all precursors within the processing region of the semiconductor processing chamber. The methods may include depositing a boron-and-nitrogen material on a substrate disposed within the processing region of the semiconductor processing chamber.

Abstract: The present invention relates to a catalyst for hydrogenation of an aromatic compound, which is capable of greatly reducing the inactivation of a catalyst by using a support including a magnesium-based spinel structure, and a preparation method therefor.

Abstract: A semiconductor device capable of improving a device performance and a reliability is provided. The semiconductor device comprising a gate structure including a gate electrode on a substrate, a source/drain pattern on a side face of the gate electrode, on the substrate and, a source/drain contact connected to the source/drain pattern, on the source/drain pattern, a gate contact connected to the gate electrode, on the gate electrode, and a wiring structure connected to the source/drain contact and the gate contact, on the source/drain contact and the gate contact, wherein the wiring structure includes a first via plug, a second via plug, and a wiring line connected to the first via plug and the second via plug, the first via plug has a single conductive film structure, and the second via plug includes a lower via filling film, and an upper via filling film on the lower via filling film.

Abstract: A coil component includes a body having one surface, and one end surface and the other end surface, respectively connected to the one surface and opposing each other, a support substrate embedded in the body, and a coil portion disposed on the support substrate and including first and second lead-out patterns respectively exposed from surfaces of the body. The first lead-out pattern is exposed from the one surface of the body and the one end surface of the body. The second lead-out pattern is exposed from the one surface of the body and the other end surface of the body. The body includes an anchor portion disposed in each of the first and second lead-out patterns.

Abstract: There is provided a method of a terminal for performing task offloading with at least one satellite in an MEC network. The method includes the steps of: acquiring at least one initial input value; acquiring information needed for determining whether or not to perform task offloading, from the at least one satellite in time slot t; setting an object function according to whether or not to perform task offloading on the basis of information on the terminal and the information needed for determining whether or not to perform task offloading acquired from the at least one satellite in time slot t; acquiring a minimum value of each object function according to whether or not to perform task offloading, and comparing the minimum value of each object function; and determining whether or not to perform task offloading to the at least one satellite in time slot t according to a result of the comparison.

Abstract: A polythiol composition according to exemplary embodiments includes: a polythiol-based compound; and a benzyl halide-based reaction regulator in an amount of 10 ppm to 2,000 ppm based on a weight of the polythiol-based compound. The reaction rate of the polythiol-based compound and an isocyanate-based compound may be controlled through the reaction regulator to inhibit a generation of stria phenomenon.

Abstract: A solenoid valve for a high-pressure container of the present invention comprises: a body portion; a valve seat which is installed on the lower portion of the body portion and has a discharge port through which a raw material gas is discharged; a coil to which electric power is applied; a core installed on the inner surface of the body portion; a lower plunger; an upper plunger; an operating rod arranged in the upper plunger; a spring arranged between the core and the operating rod; and a ball member of a spherical shape which is in contact with the lower surface of the operating rod and is seated on a seating portion formed on the lower side of the upper plunger to open/close an orifice. Thus, the hermetic state can be maintained at low pressure, and leakage in the low-pressure state can be prevented.

Abstract: A display device includes: a base substrate having a display region including a first region and a second region, and a non-display region; a first semiconductor layer including polysilicon at the second region; a first conductive layer on a first insulating layer, and including a bottom gate electrode at the first region and a second-first gate electrode at the second region; a second semiconductor layer including an oxide on a second insulating layer at the first region; a second conductive layer on a third insulating layer, and including a top gate electrode at the first region and a second-second gate electrode at the second region; and a third conductive layer on a fourth insulating layer, and including a first source electrode and a first drain electrode connected to the second semiconductor layer, and a second source electrode and a second drain electrode connected to the first semiconductor layer.

Abstract: Provided herein may be a nonvolatile semiconductor memory device. The nonvolatile semiconductor memory device may include a memory cell array, a read and write circuit, and a control logic. The memory cell array may include a plurality of nonvolatile memory cells. The read and write circuit may be configured to perform a program operation or a read operation on nonvolatile memory cells that are selected from among the plurality of nonvolatile memory cells. The control logic may be configured to control an operation of the read and write circuit. The read and write circuit may include at least one capacitor configured to store bit data.

Abstract: Exemplary semiconductor processing methods may include providing an oxygen-containing precursor to a processing region of a semiconductor processing chamber. The methods may include forming a plasma of the oxygen-containing precursor to produce oxygen-containing plasma effluents. The methods may include contacting a substrate housed in the processing region with the oxygen-containing plasma effluents. The substrate may include a boron-and-nitrogen-containing material overlying a carbon-containing material. The boron-and-nitrogen-containing material comprises a plurality of openings. The methods may include etching the carbon-containing material.