Abstract: Apparatus for mixing two or more gases prior to entering a reaction chamber, reactor systems including the apparatus, and methods of using the apparatus and systems are disclosed. The systems and methods as described herein can be used to, for example, pulse a mixture of two or more precursors to a reaction chamber.

Abstract: Herein disclosed are systems and methods related to delivery systems using solid source chemical fill vessels. The delivery system can include a vapor deposition reactor, two or more fill vessels, of which one of more can be remote from the vapor deposition reactor. Each fill vessel is configured to hold solid source chemical reactant therein. An interconnect line or conduit can fluidly connect the vapor deposition reactor with one or more of the fill vessels. A line heater can heat at least a portion of the interconnect line to at least a minimum line temperature.

Abstract: A system and method for treating a deposition reactor are disclosed. The system and method remove or mitigate formation of residue in a gas-phase reactor used to deposit doped metal films, such as aluminum-doped titanium carbide films or aluminum-doped tantalum carbide films. The method includes a step of exposing a reaction chamber to a treatment reactant that mitigates formation of species that lead to residue formation.

Abstract: A semiconductor processing device is disclosed. The device can include a reactor and a solid source vessel configured to supply a vaporized solid reactant to the reactor. A process control chamber can be disposed between the solid source vessel and the reactor. The device can include a valve upstream of the process control chamber. A control system can be configured to control operation of the valve based at least in part on feedback of measured pressure in the process control chamber.

Abstract: A semiconductor processing device can include a reactor assembly comprising a reaction chamber sized to receive a substrate therein. An exhaust line can be in fluid communication with the reaction chamber, the exhaust line configured to transfer gas out of the reaction chamber. A valve can be disposed along the exhaust line to regulate the flow of the gas along the exhaust line. A control system can be configured to operate in an open loop control mode to control the operation of the valve.

Abstract: A semiconductor processing device is disclosed. The semiconductor device includes a reactor and a vaporizer configured to provide a reactant vapor to the reactor. The device can include a process control chamber between the vaporizer and the reactor. The device can include a control system configured to modulate a pressure in the process control chamber based at least in part on feedback of measured pressure in the process control chamber.

Abstract: A system and method for treating a deposition reactor are disclosed. The system and method remove or mitigate formation of residue in a gas-phase reactor used to deposit doped metal films, such as aluminum-doped titanium carbide films or aluminum-doped tantalum carbide films. The method includes a step of exposing a reaction chamber to a treatment reactant that mitigates formation of species that lead to residue formation.

Abstract: The present disclosure pertains to embodiments of a semiconductor deposition reactor manifold and methods of using the semiconductor deposition reactor manifold which can be used to deposit semiconductor layers using processes such as atomic layer deposition (ALD). The semiconductor deposition reactor manifold has a bore, a first supply channel, and a second supply channel. Advantageously, the first supply channel and the second supply channel merge with the bore in an offset fashion which leads to reduced cross-contamination within the supply channels.

Abstract: A semiconductor processing device is disclosed. The semiconductor device includes a reactor and a vaporizer configured to provide a reactant vapor to the reactor. The device can include a process control chamber between the vaporizer and the reactor. The device can include a control system configured to modulate a pressure in the process control chamber based at least in part on feedback of measured pressure in the process control chamber.

Abstract: A system and method for treating a deposition reactor are disclosed. The system and method remove or mitigate formation of residue in a gas-phase reactor used to deposit doped metal films, such as aluminum-doped titanium carbide films or aluminum-doped tantalum carbide films. The method includes a step of exposing a reaction chamber to a treatment reactant that mitigates formation of species that lead to residue formation.

Abstract: A semiconductor processing device comprises a susceptor assembly comprising a wafer support configured to support a wafer. The wafer support comprises a wafer support body configured to support the wafer, a purge channel extending laterally from an inner portion of the wafer support body to an outer portion of the wafer support body, a first plenum channel disposed at the outer portion of the wafer support and in fluid communication with the purge channel, and an outlet to deliver purge gas to an edge of the wafer, the outlet in fluid communication with the first plenum channel, a purge gas supply hole on a surface opposite to the wafer support body. The purge gas supply hole is in fluid communication with the purge channel, and a plurality of first purge holes fluidly communicated with the first plenum channel and the purge channel.

Abstract: The present disclosure pertains to embodiments of a semiconductor deposition reactor manifold which can be used to deposit semiconductor layers using processes such as atomic layer deposition (ALD). The semiconductor deposition reactor manifold comprising heater blocks with heater elements mounted on a manifold body. Advantageously, the heater blocks are detachably mounted for easy replacement.

Abstract: Methods for depositing a thin film with improved film qualities on a hydrogen-terminated surface of a substrate are disclosed. The methods may comprise an atomic layer deposition (ALD) process comprising a plurality of deposition cycles comprising contacting the substrate with a first vapor phase metal halide or metalorganic reactant, contacting the substrate with the second vapor phase reactant, and contacting the substrate with a growth inhibitor. A growth inhibitor may be a non-consumable agent that is not incorporated into the deposited film during the deposition process and helps improve the properties of the deposited film. The growth inhibitor may comprise a vapor phase halide, such as HCl, or an organic molecule.

Abstract: Herein disclosed are systems and methods related to semiconductor processing device including a manifold including a bore configured to deliver a gas to a reaction chamber, the manifold including a first block mounted to a second block, the first and second mounted blocks cooperating to at least partially define the bore. The manifold may further comprise an insulator cap disposed about the first block or the second block. The semiconductor processing device may comprise at least three valve blocks mounted to the second block so that a precursor backflow is prevented. Heater rod(s) can extend through the second block to a location adjacent the first block.

Abstract: A semiconductor processing system for delivering large capacity vaporized precursor from solid or liquid precursor source is disclosed. The system utilizes a carrier gas to feed the vaporized precursor to a remotely located process zone where multiple process modules are disposed. The system comprises a first and second buffer volumes configured to reduce pressure drop and increase delivery rates. A method for delivering a large capacity vaporized precursor to the remotely located process zone are also disclosed.

Abstract: Apparatus for mixing two or more gases prior to entering a reaction chamber, reactor systems including the apparatus, and methods of using the apparatus and systems are disclosed. The systems and methods as described herein can be used to, for example, pulse a mixture of two or more precursors to a reaction chamber.

Abstract: Herein disclosed are systems and methods related to semiconductor processing device including a manifold including a bore configured to deliver a gas to a reaction chamber, the manifold including a first block mounted to a second block, the first and second mounted blocks cooperating to at least partially define the bore. A supply channel provides fluid communication between a gas source and the bore, and the supply channel is disposed at least partially in the second block. A metallic seal is disposed about the bore at an interface between the first and second block. Advantageously, the metallic seal improves sealing between the interface between the first block and the second block.

Abstract: A reaction system including a chemical storage assembly in fluid communication with both a remote plasma unit and a bypass line for providing both a plasma activated cleaning species and a non-plasma activated cleaning species to a reaction chamber.

Abstract: A system and method for treating a deposition reactor are disclosed. The system and method remove or mitigate formation of residue in a gas-phase reactor used to deposit doped metal films, such as aluminum-doped titanium carbide films or aluminum-doped tantalum carbide films. The method includes a step of exposing a reaction chamber to a treatment reactant that mitigates formation of species that lead to residue formation.

Abstract: Methods for depositing boron nitride on a surface of a substrate are provided. Exemplary methods include providing a boron precursor comprising a boron-halogen compound comprising one or more of iodine and bromine to a reaction chamber and providing a nitrogen precursor comprising a substituted hydrazine compound to the reaction chamber.