Patents by Inventor Jereld Lee Winkler

Jereld Lee Winkler has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Pulsed remote plasma method and system
    Patent number: 9484191
    Abstract: A system and method for providing pulsed excited species from a remote plasma unit to a reaction chamber are disclosed. The system includes a pressure control device to control a pressure at the remote plasma unit as reactive species from the remote plasma unit are pulsed to the reaction chamber.
    Type: Grant
    Filed: March 8, 2013
    Date of Patent: November 1, 2016
    Assignee: ASM IP Holding B.V.
    Inventor: Jereld Lee Winkler
  • METHOD AND SYSTEM FOR TREATMENT OF DEPOSITION REACTOR
    Publication number: 20160115590
    Abstract: A system and method for treating a deposition reactor are disclosed. The system and method remove or mitigate formation of residue in a gas-phase reactor used to deposit doped metal films, such as aluminum-doped titanium carbide films or aluminum-doped tantalum carbide films. The method includes a step of exposing a reaction chamber to a treatment reactant that mitigates formation of species that lead to residue formation.
    Type: Application
    Filed: January 4, 2016
    Publication date: April 28, 2016
    Inventors: Suvi Haukka, Eric James Shero, Fred Alokozai, Dong Li, Jereld Lee Winkler, Xichong Chen
  • METHOD AND SYSTEM FOR IN SITU FORMATION OF GAS-PHASE COMPOUNDS
    Publication number: 20160051964
    Abstract: A system and method for providing intermediate reactive species to a reaction chamber are disclosed. The system includes an intermediate reactive species formation chamber fluidly coupled to the reaction chamber to provide intermediate reactive species to the reaction chamber. A pressure control device can be used to control an operating pressure of the intermediate reactive species formation chamber, and a heater can be used to heat the intermediate reactive species formation chamber to a desired temperature.
    Type: Application
    Filed: August 21, 2014
    Publication date: February 25, 2016
    Inventors: John Tolle, Eric Hill, Jereld Lee Winkler
  • SHOWERHEAD ASSEMBLY AND COMPONENTS THEREOF
    Publication number: 20160024656
    Abstract: Showerhead assemblies, gas distribution plates, and systems including the same are disclosed. Exemplary showerhead assemblies include a gas distribution plate. Exemplary gas distribution plates include apertures designed to direct a flow of gas and to reduce stagnation of gas on surfaces of the plates.
    Type: Application
    Filed: July 28, 2014
    Publication date: January 28, 2016
    Inventors: Carl White, Eric Shero, Jereld Lee Winkler, David Marquardt
  • Method for treatment of deposition reactor
    Patent number: 9228259
    Abstract: A method for treating a deposition reactor is disclosed. The method removes or mitigates formation of residue in a gas-phase reactor used to deposit doped metal films, such as aluminum-doped titanium carbide films or aluminum-doped tantalum carbide films. The method includes a step of exposing a reaction chamber to a treatment reactant that mitigates formation of species that lead to residue formation.
    Type: Grant
    Filed: January 28, 2014
    Date of Patent: January 5, 2016
    Assignee: ASM IP Holding B.V.
    Inventors: Suvi Haukka, Eric James Shero, Fred Alokozai, Dong Li, Jereld Lee Winkler, Xichong Chen
  • METHOD FOR FORMING CONFORMAL CARBON FILMS, STRUCTURES AND DEVICES INCLUDING A CONFORMAL CARBON FILM, AND SYSTEM OF FORMING SAME
    Publication number: 20150132212
    Abstract: Methods of forming carbon films, structures and devices including the carbon films, and systems for forming the carbon films are disclosed. A method includes depositing a metal carbide film using atomic layer deposition (ALD). Metal from the metal carbide film is removed from the metal carbide film to form a carbon film. Because the films are formed using ALD, the films can be relatively conformal and can have relatively uniform thickness over the surface of a substrate.
    Type: Application
    Filed: November 13, 2013
    Publication date: May 14, 2015
    Applicant: ASM IP Holding B.V.
    Inventor: Jereld Lee Winkler
  • Multi-step method and apparatus for etching compounds containing a metal
    Patent number: 8894870
    Abstract: A system and method for etching a material, including a compound having a formulation of XYZ, wherein X and Y are one or more metals and Z is selected from one or more Group 13-16 elements, such as carbon, nitrogen, boron, silicon, sulfur, selenium, and tellurium, are disclosed. The method includes a first etch process to form one or more first volatile compounds and a metal-depleted layer and a second etch process to remove at least a portion of the metal-depleted layer.
    Type: Grant
    Filed: March 4, 2013
    Date of Patent: November 25, 2014
    Assignee: ASM IP Holding B.V.
    Inventors: Jereld Lee Winkler, Eric James Shero, Fred Alokozai
  • METHOD AND SYSTEMS FOR IN-SITU FORMATION OF INTERMEDIATE REACTIVE SPECIES
    Publication number: 20140251953
    Abstract: A system and method for providing intermediate reactive species from a remote plasma unit to a reaction chamber are disclosed. The system includes a pressure control device to control a pressure at the remote plasma unit as intermediate reactive species from the remote plasma unit are provided to the reaction chamber.
    Type: Application
    Filed: March 8, 2013
    Publication date: September 11, 2014
    Applicant: ASM IP Holding B.V.
    Inventor: Jereld Lee Winkler
  • PULSED REMOTE PLASMA METHOD AND SYSTEM
    Publication number: 20140251954
    Abstract: A system and method for providing pulsed excited species from a remote plasma unit to a reaction chamber are disclosed. The system includes a pressure control device to control a pressure at the remote plasma unit as reactive species from the remote plasma unit are pulsed to the reaction chamber.
    Type: Application
    Filed: March 8, 2013
    Publication date: September 11, 2014
    Applicant: ASM IP Holding B.V.
    Inventor: Jereld Lee Winkler
  • METHOD AND SYSTEM FOR TREATMENT OF DEPOSITION REACTOR
    Publication number: 20140220247
    Abstract: A system and method for treating a deposition reactor are disclosed. The system and method remove or mitigate formation of residue in a gas-phase reactor used to deposit doped metal films, such as aluminum-doped titanium carbide films or aluminum-doped tantalum carbide films. The method includes a step of exposing a reaction chamber to a treatment reactant that mitigates formation of species that lead to residue formation.
    Type: Application
    Filed: January 28, 2014
    Publication date: August 7, 2014
    Applicant: ASM IP Holding B.V.
    Inventors: Suvi Haukka, Eric James Shero, Fred Alokozai, Dong Li, Jereld Lee Winkler, Xichong Chen
  • MULTI-STEP METHOD AND APPARATUS FOR ETCHING COMPOUNDS CONTAINING A METAL
    Publication number: 20140217065
    Abstract: A system and method for etching a material, including a compound having a formulation of XYZ, wherein X and Y are one or more metals and Z is selected from one or more Group 13-16 elements, such as carbon, nitrogen, boron, silicon, sulfur, selenium, and tellurium, are disclosed. The method includes a first etch process to form one or more first volatile compounds and a metal-depleted layer and a second etch process to remove at least a portion of the metal-depleted layer.
    Type: Application
    Filed: March 4, 2013
    Publication date: August 7, 2014
    Applicant: ASM IP HOLDING B.V.
    Inventors: Jereld Lee Winkler, Eric James Shero, Fred Alokozai