Abstract: An inline vacuum deposition system contains thermal source pairs configured in adjacent deposition zones. Dopant sources allow the electrical characteristics of the sequentially formed layers to be controlled for a preferred deposition growth profile.

Abstract: A device for distinguishing fluids and a method for fabricating the device include integrating at least one transducer onto an optical detector. Each transducer has optical properties which vary when exposed to particular molecules of a fluid.

Abstract: A method for fabricating a low leakage integrated circuit structure. An antireflective layer is disposed without intervening layers directly onto the top of an interconnect conductor, and a dielectric layer is disposed over the antireflective layer. The interconnect conductor is aluminum; the antireflective layer is titanium nitride, and the antireflective layer has thickness less than or equal to 650 angstroms and greater than or equal to 150 angstroms. A contact window is opened with the contact window extending at least down to the antireflective layer.

Abstract: A chemical sensing system. The chemical sensing system includes a first structure having a first surface, at least one chemical sensor having a detection surface, at least one spacer attached to the first surface, a second structure having a second surface, at least one inlet port, and at least one outlet port. The first structure includes a first semiconductor substrate. The at least one chemical sensor is located on the first surface. The second structure is located over the first structure; the at least one spacer is further attached opposite the first surface to the second surface; and a volume is created thereby between the first surface, the second surface, and the at least one spacer. The at least one inlet and at least one outlet ports have capability of providing entrance for a fluid into the volume and subsequent physical contact of the fluid with the detection surface.

Abstract: A fluid sensor device includes a number of components integrated onto a substrate, such as a semiconductor substrate. The integrated components include analyte-detection transducers, signal processing circuitry for manipulating the signals from the transducers, an elevated interconnect scheme, and thermal regulation capability. The substrate is compatible with the use of integrated circuit fabrication techniques. The interconnect scheme enables dense vias that extend generally perpendicular to the surface of the substrate. The transducers are formed on a planarized side of the interconnect scheme opposite to the substrate. Inkjet printing techniques may be used in locating the transducer materials. Alternatively, the transducers may be photosensitive polymers that polymerize when exposed to light.

Abstract: In accordance with an embodiment of the present invention, a spectrophotomer includes a plurality of photon detection regions and a photon absorption material. The photon absorption material is placed above the plurality of photon detection regions. Thickness of the photon absorption material above each of the photon detection regions in the plurality of photon detection region is varied to vary a spectrum of light wavelengths detected by each photon detection region in the plurality of photon detection regions.

Abstract: A method for fabricating a low leakage integrated circuit structure. An antireflective layer is disposed without intervening layers directly onto the top of an interconnect conductor, and a dielectric layer is disposed over the antireflective layer. The interconnect conductor is aluminum; the antireflective layer is titanium nitride, and the antireflective layer has thickness less than or equal to 650 angstroms and greater than or equal to 150 angstroms. A contact window is opened with the contact window extending at least down to the antireflective layer.

Abstract: A fluid sensor device includes a number of components integrated onto a substrate, such as a semiconductor substrate. The integrated components include analyte-detection transducers, signal processing circuitry for manipulating the signals from the transducers, an elevated interconnect scheme, and thermal regulation capability. The substrate is compatible with the use of integrated circuit fabrication techniques. The interconnect scheme enables dense vias that extend generally perpendicular to the surface of the substrate. The transducers are formed on a planarized side of the interconnect scheme opposite to the substrate. Inkjet printing techniques may be used in locating the transducer materials. Alternatively, the transducers may be photosensitive polymers that polymerize when exposed to light.

Abstract: A dispense system stores a scented material or materials and is provided with an electrical interface that is compatible with a hand-held device. The dispense system can be connected to the hand-held device and driven with the help of the hand-held device to dispense the scented material. The dispense system can be configured to store different scented materials that can be mixed to create different scents. Logic within the hand-held device supports the mixing and dispensing of the scented materials.

Abstract: A device for distinguishing fluids and a method for fabricating the device include integrating at least one transducer onto an optical detector. Each transducer has optical properties which vary when exposed to particular molecules of a fluid.

Abstract: A method for making piezoelectric cantilever pressure sensor array is disclosed. The method contains forming a layer structure comprising a substrate, an elastic layer, a first electrode layer, a piezoelectric layer, and a second electrode layer, defining piezoelectric cantilevers in the layer structure, defining Y-lines in the first electrode layer, forming X-lines; and creating a cavity under each piezoelectric cantilever. The piezoelectric cantilever pressure sensor array can be used in various applications including fingerprint identification devices.

Abstract: An active pixel sensor having a transparent conductor that directly contacts a conductive element in an interconnection structure to electrically connect the transparent conductor to a pixel sensor bias voltage is provided. The active pixel sensor includes a semiconductor substrate, the interconnection layer, which is formed over the substrate, and a pixel interconnection layer formed over the interconnection layer. Photo sensors that include a pixel electrode, an I-layer, and may include a P-layer are formed over the pixel interconnection layer. The transparent conductor is formed over the photo sensors and the conductive element exposed on the surface of the interconnection layer.

Abstract: Systems and methods of reducing image sensor lag are described. In one aspect, an image sensor includes multiple pixels, pixel circuits, and a bias circuit. Each of the pixels includes a respective photodiode region. Each of the pixel circuits is operable to control integration and readout steps for a respective pixel. The bias circuit is operable to apply voltages across the pixels to induce carrier injection into the photodiode regions to reduce image lag. In another aspect, non-reverse-bias flow of carriers is induced in the photodiode regions of image sensor pixels to reduce image lag.

Abstract: A method for making photonic crystal structures using amorphous silicon that is temperature compatible with a wide variety of substrates. Both hydrogenated and non-hydrogenated amorphous silicon may be used.

Abstract: An add drop filter utilizing a three dimensional photonic crystal structure for WDM applications is disclosed.

Abstract: An image sensor. The image sensor array includes a substrate. An interconnect structure is formed adjacent to the substrate. An amorphous silicon electrode layer is adjacent to the interconnect structure. The amorphous silicon electrode layer includes electrode ion implantation regions between pixel electrode regions. The pixel electrode regions define cathodes of an array of image sensors. The electrode ion implantation regions provide physical isolation between the pixel electrode regions. The cathodes are electrically connected to the interconnect structure. An amorphous silicon I-layer is adjacent to the amorphous silicon electrode layer. The amorphous silicon I-layer forms an inner layer of each of the image sensors. A transparent electrode layer is formed adjacent to the image sensors. An inner surface of the transparent electrode is electrically connected to anodes of the image sensors and the interconnect structure.

Abstract: An image sensor and method of manufacture therefor includes a substrate having pixel control circuitry. Dielectric layers on the substrate include interconnects in contact with the pixel control circuitry and with pixel electrodes. An intrinsic layer is over the pixel electrodes and has a gap provided between the pixel electrodes. An intrinsic-layer covering layer is over the intrinsic layer and a transparent contact layer over the intrinsic-layer covering and the interconnects. The intrinsic, intrinsic-layer covering, and transparent contact layer interact in different combinations to provide a pixel isolation system for the image sensor.

Abstract: Using a micro-electromechanical actuator, tuning stubs may be actuated for tuning cavities in photonic crystal lattice structures. An actuated tuning stub can be used to tune cavities in both two and three dimensional photonic crystal lattice structures.

Abstract: Using a micro-electromechanical actuator, tuning stubs may be actuated for tuning cavities in photonic crystal lattice structures.

Abstract: A method for making photonic crystal structures using amorphous silicon that is temperature compatible with a wide variety of substrates. Both hydrogenated and non-hydrogenated amorphous silicon may be used.