Abstract: In an embodiment, an apparatus includes: a signal pad; a first diode having a first terminal coupled to the signal pad and a second terminal, the first diode having a first polarity; a second diode having a second terminal coupled to the signal pad and a first terminal, the second diode having a second polarity; a first insulated gate bipolar transistor (IGBT) having a first polarity, the first IGBT coupled between the second terminal of the first diode and a reference voltage node; and a second IGBT having the first polarity, the second IGBT coupled between the first terminal of the second diode and the reference voltage node.

Abstract: According to one embodiment, a drinking straw may include a first part that includes a manual manipulation feature and a second part with an interior volume with an open side and at least one open end. The first part may be configured to be accepted into the interior volume and the manual manipulation feature of the first part may be configured to extend through at least one of the open side and open end.

Abstract: In one example, a modified electrical device includes a body and at least one connector on the body to make power and control connections with an active cover plate. In some embodiments, a wall plate system may include a modified electrical device or receptacle and/or an active cover plate.

Abstract: A variety of active cover plate configurations with prongs configured to contact side screw terminals of electrical receptacles are described.

Abstract: In one example, a modified electrical device includes a body and at least one connector on the body to make power and control connections with an active cover plate. In some embodiments, a wall plate system may include a modified electrical device or receptacle and/or an active cover plate.

Abstract: A variety of active cover plate configurations with prongs configured to contact side screw terminals of electrical receptacles are described.

Abstract: A variety of active cover plate configurations with prongs configured to contact side screw terminals of electrical receptacles are described.

Abstract: A variety of active cover plate configurations with prongs configured to contact side screw terminals of electrical receptacles or switches are described.

Abstract: A variety of active cover plate configurations with prongs configured to contact side screw terminals of electrical receptacles are described.

Abstract: A variety of active cover plate configurations with prongs configured to contact side screw terminals of electrical receptacles are described.

Abstract: A variety of active cover plate configurations with prongs configured to contact side screw terminals of electrical receptacles or switches are described.

Abstract: An active cover plate includes a face plate, a load and an electrically insulated power extractor extending rearward from the face plate to interface with an electrical receptacle, wherein the power extractor extracts electrical power from the electrical receptacle to energize the load. A method for installing an active cover plate on an electrical receptacle is also provided.

Abstract: A variety of active cover plate configurations with prongs configured to contact side screw terminals of electrical receptacles are described. In one illustrative embodiment, an active cover plate includes a multi-gang face plate configured to be installed over a multi-gang light switch installation, the multi-gang faceplate including at least two apertures sized to accept a manually manipulatable element of switches in the multi-gang light switch installation. Prongs extend rearward from the multi-gang faceplate around at least one of the apertures.

Abstract: A diode string for a semiconductor circuit configured with a guard ring silicon-controlled rectifier (SCR) for electrostatic discharge (ESD) protection. The diode string includes multiple NPN transistor diode structures formed in an N-well structure and electrically coupled in series between a reference voltage node and an I/O pad. Each diode structure may include a P-type retro-well structure including at least one N+ doped region and at least one P+ doped region. The P+ guard ring includes at least one P+ doped structure formed in the N-well structure disposed on either side of the first diode structure and electrically coupled to the reference voltage node. The P+ guard ring forms the SCR with the first diode structure. The diode string is triggered in response to an ESD event, which activates the SCR, and the SCR clamps the I/O pad to the reference voltage node and handles the ESD current.