Abstract: A description is given of a method and an apparatus for generating radiation (12) in the wavelength range from about 1 nm to about 30 nm by means of an electrically operated discharge, which can be used in lithography or in metrology. Use is made of at least one first electrode (14) and at least one second electrode (16) at a distance therefrom, wherein at least one working gas (22) is provided between the electrodes (14, 16). A plasma is ignited in the working gas (22), the generated radiation (12) of which plasma is forwarded via a first opening (30) for further use, and wherein debris particles (28) are produced in at least one region (26) of at least one of the electrodes (14, 16). In order to retain the debris particles (28), the method is configured such that at least the region (26) is arranged with respect to the first opening (30) in such a way that the movement paths (32) of the debris particles (28) run at least predominantly outside an area delimited by the first opening (30).

Abstract: The invention relates to a method and a device for the generation of a plasma through electric discharge in a discharge space which contains at least two electrodes, at least one of which is constructed from a matrix material or carrier material, such that an erosion-susceptible region with an evaporation spot is formed at least by the current flow. To present a method or a device for the generation of a plasma by electric discharge, it is suggested that a sacrificial substrate (38) is provided at least at the evaporation spot, the boiling point of said sacrificial suvstrate (38) during discharge operation lying below the melting point of the carrier material (30), such that charge carriers arising in the current flow are mainly generated from the sacrificial substrate (38).

Abstract: It is described a low ohmic Through Wafer Interconnection (TWI) for electronic chips formed on a semiconductor substrate (600). The TWI comprises a first connection extending between a front surface and a back surface of the substrate (600). The first connection (610) comprises a through hole filled with a low ohmic material having a specific resistivity lower than poly silicon. The TWI further comprises a second connection (615) also extending between the front surface and the back surface. The second connection (615) is spatially separated from the first connection (610) by at least a portion of the semiconductor substrate (600). The front surface is provided with a integrated circuit arrangement (620) wherein the first connection (610) is electrically coupled to at least one node of the integrated circuit arrangement (620) without penetrating the integrated circuit arrangement (620). During processing the TWI the through hole may be filled first with a non-metallic material, e.g. poly silicon.

Abstract: A method of producing extreme ultraviolet radiation (EUV) or soft X-ray radiation by means of an electrically operated discharge, in particular for EUV lithography or for metrology, in which a plasma (22) is ignited in a gaseous medium between at least two electrodes (14, 16) in a discharge space (12), said plasma emitting said radiation that is to be produced. The gaseous medium is produced from a metal melt (24), which is applied to a surface in said discharge space (12) and at least partially evaporated by an energy beam, in particular by a laser beam (20).

Abstract: The present invention relates to a method of protecting a radiation source producing extreme ultraviolet radiation (EUV) and/or soft X-rays against short circuits. The method applies to radiation sources producing said EUV-radiation and/or soft X-rays by means of an electrically operated discharge, which is ignited in a vapor between at least two electrodes (1, 2) in a discharge space, wherein said vapor is produced from a metal melt (6), which is applied to a surface in said discharge space and at least partially evaporated by an energy beam (9). Such a radiation source has one or several small gaps (17) between said electrodes (1, 2) and/or between components (4, 5) electrically connected to said electrodes (1, 2). These gaps (17) can cause short circuits when evaporated metal condenses there.

Abstract: The invention relates to a gas discharge lamp for EUV radiation with an anode (1) and a hollow cathode (2), wherein the hollow cathode (2) has at least two openings (3, 3?) and the anode (1) has a through hole (4), which is characterized in that the longitudinal axes (5, 5?) of the hollow cathode openings (3) have a common point of intersection S lying on the axis of symmetry (6) of the anode opening (4).

Abstract: A lithographic projection apparatus is disclosed. The apparatus includes a support structure constructed to support a patterning structure. The patterning structure is adapted to pattern a beam of radiation according to a desired pattern. The apparatus also includes a substrate holder that is constructed to hold a substrate, a projection system that is constructed and arranged to project the patterned beam onto a target portion of the substrate, and a downstream radical source that is connected to a gas supply and is configured to provide a beam of radicals onto a surface to be cleaned.

Abstract: A method of producing extreme ultraviolet radiation (EUV) or soft X-ray radiation by means of an electrically operated discharge, in particular for EUV lithography or for metrology, in which a plasma (22) is ignited in a gaseous medium between at least two electrodes (14, 16) in a discharge space (12), said plasma emitting said radiation that is to be produced. The gaseous medium is produced from a metal melt (24), which is applied to a surface in said discharge space (12) and at least partially evaporated by an energy beam, in particular by a laser beam (20).

Abstract: A lithographic apparatus includes an illumination system configured to provide a beam of radiation, a support configured to support a patterning device, a substrate table and a projection system. Furthermore, the lithographic apparatus includes a plurality of EUV sources for providing EUV radiation to the illumination system and a distributor which is arranged to convert the EUV radiation from each of the EUV sources into an intermediate beam of radiation. The intermediate beam of radiation is directed from the distributor in a first direction by a mirror surface. The distributor may include a rotationally driven mirror arrangement, the axis of rotation being non-parallel to the mirror surface.

Abstract: The invention relates to a method and a device for the generation of a plasma through electric discharge in a discharge space which contains at least two electrodes, at least one of which is constructed from a matrix material or carrier material, such that an erosion-susceptible region with an evaporation spot is formed at least by the current flow. To present a method or a device for the generation of a plasma by electric discharge, it is suggested that a sacrificial substrate (38) is provided at least at the evaporation spot, the boiling point of said lying below the melting point of the carrier material (30), such that charge carriers arising in the current flow are mainly generated from the sacrificial substrate (38).

Abstract: A lithographic projection apparatus includes a reflector assembly, the reflector assembly includes a first and a second reflector extending in a direction of an optical axis, the first and second reflector each having a reflective surface, a backing surface and an entry section at respectively a first and a second distance from the optical axis, the first distance being larger than the second distance, rays deriving from a point on the optical axis being cut off by the entry sections of the first and second reflectors and being reflected on the reflective surface of the first reflector and defining a high radiation intensity zone and a low radiation intensity zone between the reflectors; a radial support member configured to support the reflectors extending in the low radiation intensity zone, wherein the radial support member creates a shade in a downstream direction of the optical axis and a virtual shade in an upstream direction of the optical axis; and a structure placed in the virtual shade.

Abstract: The invention describes a method of manufacturing a filter for retaining a substance originating from a radiation source, which filter comprises a thin layer that is transparent to extreme ultraviolet and/or soft X-ray radiation and which may be used inter alia in a device for EUV lithography. It is proposed that the filter (10) is high-temperature-resistant so as to render possible its use in particular for high-power radiation sources.

Abstract: A lithographic projection apparatus includes a radiation system configured to form a beam of radiation from radiation emitted by a radiation source, as well as a support configured to hold a patterning device, which when irradiated by the beam of radiation provides the beam of radiation with a pattern. A substrate table is configured to hold a substrate, and a projection system is configured to image an irradiated portion of the patterning device onto a target portion of the substrate. The radiation system further includes an aperture at a distance from the optical axis, a reflector which is placed behind the aperture when seen from the source and a structure placed in a low radiation intensive region behind the aperture.

Abstract: The invention relates to a gas discharge lamp for EUV radiation with an anode (1) and a hollow cathode (2), wherein the hollow cathode (2) has at least two openings (3, 3?) and the anode (1) has a through hole (4), which is characterized in that the longitudinal axes (5, 5?) of the hollow cathode openings (3) have a common point of intersection S lying on the axis of symmetry (6) of the anode opening (4).

Abstract: A lithographic apparatus includes an illumination system configured to provide a beam of radiation, a support configured to support a patterning device, a substrate table and a projection system. Furthermore, the lithographic apparatus includes a plurality of EUV sources for providing EUV radiation to the illumination system and a distributor which is arranged to convert the EUV radiation from each of the EUV sources into an intermediate beam of radiation. The intermediate beam of radiation is directed from the distributor in a first direction by a mirror surface. The distributor may include a rotationally driven mirror arrangement, the axis of rotation being non-parallel to the mirror surface.

Abstract: A lithographic apparatus includes an illumination system configured to provide a beam of radiation, a support configured to support a patterning device, a substrate table and a projection system. Furthermore, the lithographic apparatus includes a plurality of EUV sources for providing EUV radiation to the illumination system and a distributor which is arranged to convert the EUV radiation from each of the EUV sources into an intermediate beam of radiation. The intermediate beam of radiation is directed from the distributor in a first direction by a mirror surface. The distributor may include a rotationally driven mirror arrangement, the axis of rotation being non-parallel to the mirror surface.

Abstract: A lithographic apparatus includes a first space containing a plasma source and also containing a source gas which may have a high absorption of radiation at the wavelength of the projection beam of the apparatus, this gas being restricted from entering the remainder of the lithographic system by a second space containing a buffer gas having a low absorption at the wavelength of the projection beam of the apparatus. The pressure of the buffer gas is lower than or equal to that of the source gas.

Abstract: A controlled aperture provides an opening through a barrier separating two parts of the apparatus to enable a pulse of radiation to be radiated from one part of the apparatus to the a second part. The controlled aperture closes the opening between the pulses of radiation to minimize the gas flow between the first and second parts.

Abstract: A lithographic apparatus includes an illumination system configured to provide a beam of radiation, a support configured to support a patterning device, a substrate table and a projection system. Furthermore, the lithographic apparatus includes a plurality of EUV sources for providing EUV radiation to the illumination system and distribution means which are arranged to convert the EUV radiation from each of the EUV sources into an intermediate beam of radiation. The intermediate beam of radiation is directed from the distribution means in a first direction by a mirror surface. The distribution means further comprise a rotationally driven mirror arrangement, the axis of rotation being non-parallel to the mirror surface.

Abstract: A lithographic projection apparatus includes a radiation system configured to form a beam of radiation from radiation emitted by a radiation source, as well as a support configured to hold a patterning device, which when irradiated by the beam of radiation provides the beam of radiation with a pattern. A substrate table is configured to hold a substrate, and a projection system is configured to image an irradiated portion of the patterning device onto a target portion of the substrate. The radiation system further includes an aperture at a distance from the optical axis, a reflector which is placed behind the aperture when seen from the source and a structure placed in a low radiation intensive region behind the aperture.