Abstract: A lithographic projection apparatus includes a radiation system configured to form a beam of radiation from radiation emitted by a radiation source, as well as a support configured to hold a patterning device, which when irradiated by the beam provides the beam with a pattern. A substrate table is configured to hold a substrate, and a projection system is configured to image an irradiated portion of the patterning device onto a target portion of the substrate. The radiation system further includes an aperture at a distance from the optical axis, a reflector which is placed behind the aperture when seen from the source and a structure placed in a low radiation intensive region behind the aperture.

Abstract: A lithographic projection apparatus is disclosed. The apparatus includes a support structure constructed to support a patterning structure. The patterning structure is adapted to pattern a beam of radiation according to a desired pattern. The apparatus also includes a substrate holder that is constructed to hold a substrate, a projection system that is constructed and arranged to project the patterned beam onto a target portion of the substrate, and a downstream radical source that is connected to a gas supply and is configured to provide a beam of radicals onto a surface to be cleaned.

Abstract: A lithographic projection apparatus includes a radiation system configured to form a projection beam of radiation from radiation emitted by a radiation source, as well as a support configured to hold a patterning device, which when irradiated by the projection beam provides the projection beam with a pattern. A substrate table is configured to hold a substrate, and a projection system is configured to image an irradiated portion of the patterning device onto a target portion of the substrate. The radiation system further includes an aperture at a distance from the optical axis, a reflector which is placed behind the aperture when seen from the source and a structure placed in a low radiation intensive region behind the aperture.

Abstract: A lithographic projection apparatus comprising a radiation system for supplying a projection beam of radiation, a mask table for holding a mask, a substrate table for holding a substrate and a projection system for imaging an irradiated portion of the mask onto a target portion of the substrate. Either or both of the radiation system and the projection system is supplied with an inert gas at a pressure of from 0.1 to 10 Pa in order to suppress contamination, for example by hydrocarbon molecules, of any optical components in the system(s).

Abstract: An EUV-transparent interface structure for optically linking a first closed chamber (80) and a second closed chamber (70) whilst preventing a contaminating flow of a medium and/or particles from one chamber to the other comprises an EUV-transparent member (60) in the form of a membrane (60) or a channel structure (100). An EUV-transparent (inert) gas (68) is forced to flow at the side of the member facing the source of contamination (LA; W) and towards the source of contamination to keep the contaminating particles away from the member (60; 100). The interface structure may be arranged between an EUV radiation source (LA) and the illuminator optics (IL) and/or between the projection system (PL) and the resist layer (RL) on top of a substrate (W) in a lithographic projection apparatus.

Abstract: A controlled aperture provides an opening through a barrier separating two parts of the apparatus to enable a pulse of radiation to be radiated from one part of the apparatus to the a second part. The controlled aperture closes the opening between the pulses of radiation to minimize the gas flow between the first and second parts.

Abstract: A lithographic apparatus includes a first space containing a plasma source and also containing a source gas which may have a high absorption of radiation at the wavelength of the projection beam of the apparatus, this gas being restricted from entering the remainder of the lithographic system by a second space containing a buffer gas having a low absorption at the wavelength of the projection beam of the apparatus. The pressure of the buffer gas is lower than or equal to that of the source gas.

Abstract: A lithographic projection apparatus has a discharge plasma radiation source that is contained in a vacuum chamber. The radiation source is to generate a beam of EUV radiation. A chamber wall of the vacuum chamber incorporates a channel structure comprising adjacent narrow channels separated by walls that are substantially parallel to a propagation direction of the radiation generated so as to pass the radiation from the vacuum chamber through the structure to another subsequent vacuum chamber. In the subsequent vacuum chamber, a much higher vacuum level (lower pressure) can be maintained than is present in the vacuum chamber of the radiation source.

Abstract: An EUV-transparent interface structure for optically linking a first closed chamber (80) and a second closed chamber (70) whilst preventing a contaminating flow of a medium and/or particles from one chamber to the other comprises an EUV-transparent member (60) in the form of a membrane (60) or a channel structure (100). An EUV-transparent (inert) gas (68) is forced to flow at the side of the member facing the source of contamination (LA; W) and towards the source of contamination to keep the contaminating particles away from the member (60; 100). The interface structure may be arranged between an EUV radiation source (LA) and the illuminator optics (IL) and/or between the projection system (PL) and the resist layer (RL) on top of a substrate (W) in a lithographic projection apparatus.

Abstract: A lithographic projection apparatus has a discharge plasma radiation source that is contained in a vacuum chamber. The radiation source is to generate a beam of EUV radiation. A chamber wall of the vacuum chamber incorporates a channel structure comprising adjacent narrow channels separated by walls that are substantially parallel to a propagation direction of the radiation generated so as to pass the radiation from the vacuum chamber through the structure to another subsequent vacuum chamber. In the subsequent vacuum chamber, a much higher vacuum level (lower pressure) can be maintained than is present in the vacuum chamber of the radiation source.

Abstract: A lithographic projection apparatus comprising a radiation system for supplying a projection beam of radiation, a mask table for holding a mask, a substrate table for holding a substrate and a projection system for imaging an irradiated portion of the mask onto a target portion of the substrate. Either or both of the radiation system and the projection system is supplied with an inert gas at a pressure of from 0.1 to 10 Pa in order to suppress contamination, for example by hydrocarbon molecules, of any optical components in the system(s).

Abstract: A lithographic projection apparatus comprising a radiation system for supplying a projection beam of electromagnetic radiation in the extreme ultraviolet (EUV) range, a support structure for supporting patterning structure, the patterning structure serving to pattern the projection beam according to a desired pattern, a substrate table for holding a substrate and a projection system for projecting the patterned beam onto a target portion of the substrate. A space within the apparatus, which space contains a mirror, is supplied with a hydrocarbon gas which forms a protective cap layer on the mirror surface. The partial pressure of the hydrocarbon gas in the space is controlled in response to variations in the background pressure in the space and/or in the reflectivity of the mirror, such that the thickness of the cap layer on the mirror remains within an acceptable range.