Abstract: A bio-sensor device, integrated with a display portion, includes a surface for touching by a body part, such as a finger. A light source, such as an array of LEDs, emit light through the surface so as to be reflected and partially absorbed by the body part An array of photodetectors detects light reflected back by the body part and generates signals corresponding to an image of the light reflection, which corresponds to the light absorption pattern in the body part. The light absorption pattern may correlate to a fingerprint, a blood vessel pattern, blood movement within the blood vessels, combinations thereof, or other biometric feature. A processor receives the signals from the photodetectors and analyzes the signals to determine a characteristic of the body part. The characteristic may be used to authenticate the user of the bio-sensor device by comparing the detected characteristic to a stored characteristic.

Abstract: An electrochemical gas sensing element has a footprint of less than 5 mm×5 mm so the volume of electrolyte, the sizes of the electrodes, and the electrical interconnects are very small. This results in a fast stabilization after detecting gasses and enables rapid changes in bias voltage to target different gasses. The sensor body is ceramic, and the other components are stable at temperatures including solder reflow temperatures, thus allowing the use of conventional solder reflow techniques to mount the sensing element to a PCB. A sensor circuit is mounted on the sensing element body to detect the currents through the sensor electrode and digitally process the information, resulting in a more accurate analysis. The small size, low power consumption, and modularity allow the sensor element to be mounted in small handheld devices.

Abstract: A method according to embodiments of the invention includes providing a wafer of semiconductor light emitting devices, each semiconductor light emitting device including a light emitting layer sandwiched between an n-type region and a p-type region. A wafer of support substrates is provided, each support substrate including a body. The wafer of semiconductor light emitting devices is bonded to the wafer of support substrates. Vias are formed extending through the entire thickness of the body of each support substrate.

Abstract: An image capture device, such as a camera, has multiple modes including a light field image capture mode, a conventional 2D image capture mode, and at least one intermediate image capture mode. By changing position and/or properties of the microlens array (MLA) in front of the image sensor, changes in 2D spatial resolution and angular resolution can be attained. In at least one embodiment, such changes can be performed in a continuous manner, allowing a continuum of intermediate modes to be attained.

Abstract: A method according to embodiments of the invention includes providing a wafer of semiconductor light emitting devices, each semiconductor light emitting device including a light emitting layer sandwiched between an n-type region and a p-type region. A wafer of support substrates is provided, each support substrate including a body. The wafer of semiconductor light emitting devices is bonded to the wafer of support substrates. Vias are formed extending through the entire thickness of the body of each support substrate.

Abstract: A dual-mode light field camera or plenoptic camera is enabled to perform both 3D light field imaging and conventional high-resolution 2D imaging, depending on the selected mode. In particular, an active system is provided that enables the microlenses to be optically or effectively turned on or turned off, allowing the camera to selectively operate as a 2D imaging camera or a 3D light field camera.

Abstract: A method according to embodiments of the invention includes providing a wafer of semiconductor light emitting devices, each semiconductor light emitting device including a light emitting layer sandwiched between an n-type region and a p-type region. A wafer of support substrates is provided, each support substrate including a body. The wafer of semiconductor light emitting devices is bonded to the wafer of support substrates. Vias are formed extending through the entire thickness of the body of each support substrate.

Abstract: A structure according to embodiments of the invention includes a semiconductor light emitting device and an optical element disposed over the semiconductor light emitting device. The semiconductor light emitting device is disposed in a recess in the optical element. A reflector is disposed on a bottom surface of the optical element. A method according to embodiments of the invention includes disposing a semiconductor light emitting device on a substrate and forming a reflector adjacent the semiconductor light emitting device. An optical element is formed over the semiconductor light emitting device. The semiconductor light emitting device is removed from the substrate.

Abstract: A method according to embodiments of the invention includes providing a wafer of semiconductor light emitting devices, each semiconductor light emitting device including a light emitting layer sandwiched between an n-type region and a p-type region. A wafer of support substrates is provided, each support substrate including a body. The wafer of semiconductor light emitting devices is bonded to the wafer of support substrates. Vias are formed extending through the entire thickness of the body of each support substrate.

Abstract: A method according to embodiments of the invention includes providing a wafer of semiconductor light emitting devices, each semiconductor light emitting device including a light emitting layer sandwiched between an n-type region and a p-type region. A wafer of support substrates is provided, each support substrate including a body. The wafer of semiconductor light emitting devices is bonded to the wafer of support substrates. Vias are formed extending through the entire thickness of the body of each support substrate.

Abstract: A dual-mode light field camera or plenoptic camera is enabled to perform both 3D light field imaging and conventional high-resolution 2D imaging, depending on the selected mode. In particular, an active system is provided that enables the microlenses to be optically or effectively turned on or turned off, allowing the camera to selectively operate as a 2D imaging camera or a 3D light field camera.

Abstract: Embodiments of the invention include a semiconductor structure (23) including a light emitting layer. A substrate (10) comprising lithium is attached to the semiconductor structure (23). A surface of the substrate (10) forms an angle with a major plane of the semiconductor structure (23) that is between 60° and 75°.

Abstract: In one embodiment, a semiconductor device wafer (10) contains electrical components and has electrodes (28) on a first side of the device wafer (10). A transparent carrier wafer (30) is bonded to the first side of the device wafer (10) using a bonding material (32) (e.g., a polymer or metal). The second side of the device wafer (10) is then processed, such as thinned, while the carrier wafer (30) provides mechanical support for the device wafer (10). The carrier wafer (30) is then de-bonded from the device wafer (10) by passing a laser beam (46) through the carrier wafer (30), the carrier wafer (30) being substantially transparent to the wavelength of the beam. The beam impinges on the bonding material (32), which absorbs the beam's energy, to break the chemical bonds between the bonding material (32) and the carrier wafer (30). The released carrier wafer (30) is then removed from the device wafer (10), and the residual bonding material is cleaned from the device wafer (10).

Abstract: A dual-mode light field camera or plenoptic camera is enabled to perform both 3D light field imaging and conventional high-resolution 2D imaging, depending on the selected mode. In particular, an active system is provided that enables the microlenses to be optically or effectively turned on or turned off, allowing the camera to selectively operate as a 2D imaging camera or a 3D light field camera.

Abstract: A dual-mode light field camera or plenoptic camera is enabled to perform both 3D light field imaging and conventional high-resolution 2D imaging, depending on the selected mode. In particular, an active system is provided that enables the microlenses to be optically or effectively turned on or turned off, allowing the camera to selectively operate as a 2D imaging camera or a 3D light field camera.

Abstract: A method according to embodiments of the invention includes providing a wafer of semiconductor light emitting devices, each semiconductor light emitting device including a light emitting layer sandwiched between an n-type region and a p-type region. A wafer of support substrates is provided, each support substrate including a body. The wafer of semiconductor light emitting devices is bonded to the wafer of support substrates. Vias are formed extending through the entire thickness of the body of each support substrate.

Abstract: A method according to embodiments of the invention includes providing a wafer including a semiconductor structure grown on a growth substrate, the semiconductor structure comprising a III-nitride light emitting layer sandwiched between an n-type region and a p-type region. The wafer is bonded to a second substrate. The growth substrate is removed. After bonding the wafer to the second substrate, the wafer is processed into multiple light emitting devices.

Abstract: A support substrate including a body (35) and a plurality of vias (48) extending through an entire thickness of the body is bonded to a semiconductor light emitting device including a light emitting layer (14) sandwiched between an n-type region (12) and a p-type region (16). The support substrate is no wider than the semiconductor light emitting device.

Abstract: A metal oxide varistor comprising one or more zinc oxide layers is formed integral to a ceramic substrate to provide ESD protection of a semiconductor device mounted to the substrate. The portion of the ceramic substrate not forming the varistor may be aluminum oxide, aluminum nitride, silicon carbide, or boron nitride. The varistor portion may form any part of the ceramic substrate, including all of the ceramic substrate.

Abstract: A metal oxide varistor comprising one or more zinc oxide layers is formed integral to a ceramic substrate to provide ESD protection of a semiconductor device mounted to the substrate. The portion of the ceramic substrate not forming the varistor may be aluminum oxide, aluminum nitride, silicon carbide, or boron nitride. The varistor portion may form any part of the ceramic substrate, including all of the ceramic substrate.