Patents by Inventor Jerry Chen

Jerry Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12378667
    Abstract: A method of forming a doped silicon nitride film on a surface of a substrate and structures including the doped silicon nitride film are disclosed. Exemplary methods include forming a layer comprising silicon nitride using a first thermal process and forming a layer comprising doped silicon nitride using a second thermal process to thereby form the doped silicon nitride film.
    Type: Grant
    Filed: October 24, 2022
    Date of Patent: August 5, 2025
    Assignee: ASM IP Holding B.V.
    Inventors: Xingye Wang, Fu Tang, Eric Jen cheng Liu, Peijun Jerry Chen, YoungChol Byun
  • Patent number: 12317543
    Abstract: Embodiments of the present disclosure generally relate to an organic light emitting diode device, and more particularly, to moisture barrier films utilized in an OLED device. The OLED device comprises a thin film encapsulation structure and/or a thin film transistor. A moisture barrier film is used as a first barrier layer in the thin film encapsulation structure and as a passivation layer and/or a gate insulating layer in the thin film transistor. The moisture barrier film comprises a silicon oxynitride material having a low refractive index of less than about 1.5, a low water vapor transmission rate of less than about 5.0×10?5 g/m2/day, and low hydrogen content of less than about 8%.
    Type: Grant
    Filed: July 10, 2019
    Date of Patent: May 27, 2025
    Assignee: Applied Materials, Inc.
    Inventors: Wen-Hao Wu, Jriyan Jerry Chen, Dong Kil Yim
  • Publication number: 20250076467
    Abstract: The technology employs a contrasting color scheme on different surfaces for sensor housing assemblies mounted on exterior parts of a vehicle that is configured to operate in an autonomous driving mode. Lighter and darker colors may be chosen on different surfaces according to a thermal budget for a given sensor housing assembly, due to the different types of sensors arranged along particular surfaces, or to provide color contrast for different regions of the assembly. For instance, differing colors such as black/white or blue/white, and different finishes such as matte or glossy, may be selected to enhance certain attributes or to minimize issues associated with a sensor housing assembly.
    Type: Application
    Filed: September 13, 2024
    Publication date: March 6, 2025
    Inventors: Yi-Hui Bruce-Wen, YooJung Ahn, Jared S. Gross, Joshua Newby, Jerry Chen, Ralph Hamilton Shepard, Adam Brown
  • Patent number: 12148766
    Abstract: Embodiments of the disclosure generally provide methods of forming a capacitor layer or a gate insulating layer with high dielectric constant as well as low film current leakage and desired film qualities for display applications. In one embodiment, a thin film transistor structure includes a dielectric layer formed on a substrate, wherein the dielectric layer is a zirconium containing material comprising aluminum, and gate, source and drain electrodes formed on the substrate, wherein the gate, source and drain electrodes formed above or below the dielectric layer.
    Type: Grant
    Filed: December 19, 2023
    Date of Patent: November 19, 2024
    Assignee: Applied Materials, Inc.
    Inventors: Xiangxin Rui, Lai Zhao, Jrjyan Jerry Chen, Soo Young Choi, Yujia Zhai
  • Patent number: 12135391
    Abstract: The technology employs a contrasting color scheme on different surfaces for sensor housing assemblies mounted on exterior parts of a vehicle that is configured to operate in an autonomous driving mode. Lighter and darker colors may be chosen on different surfaces according to a thermal budget for a given sensor housing assembly, due to the different types of sensors arranged along particular surfaces, or to provide color contrast for different regions of the assembly. For instance, differing colors such as black/white or blue/white, and different finishes such as matte or glossy, may be selected to enhance certain attributes or to minimize issues associated with a sensor housing assembly.
    Type: Grant
    Filed: August 11, 2020
    Date of Patent: November 5, 2024
    Assignee: Waymo LLC
    Inventors: Yi-Hui Bruce-Wen, YooJung Ahn, Jared Gross, Joshua Newby, Jerry Chen, Ralph Shepard, Adam Brown
  • Publication number: 20240352584
    Abstract: The present disclosure generally provides an apparatus and method for gas diffuser support structure for a vacuum chamber. The gas diffuser support structure comprises a backing plate having a central bore, and a gas deflector having a length and a width unequal to the length coupled to the backing plate by a plurality of outward fasteners coupled to a plurality of outward threaded holes formed in the backing plate, in which a spacer is disposed between the backing plate and the gas deflector, and in which a length to width ratio of the gas deflector is about 0.1:1 to about 10:1.
    Type: Application
    Filed: March 27, 2024
    Publication date: October 24, 2024
    Inventors: Yu-Hsuan WU, Teng Mao WANG, Yan-Chi PAN, Yi-Jiun SHIU, Jrjyan Jerry CHEN, Cheng-yuan LIN, Hsiao-Ling YANG, Yu-Min WANG, Wen-Hao WU
  • Publication number: 20240347551
    Abstract: Embodiments of the disclosure generally provide methods of forming a hybrid film stack that may be used as a capacitor layer or a gate insulating layer with a high dielectric constant as well as film qualities for display applications. In one embodiment, a thin film transistor structure include gate, source and drain electrodes formed on a substrate, and an insulating layer formed on a substrate, wherein the insulating layer is a hybrid film stack having a dielectric layer comprising a zirconium containing material disposed on an interface layer formed above or below the gate, source and drain electrodes.
    Type: Application
    Filed: June 21, 2024
    Publication date: October 17, 2024
    Inventors: Xiangxin RUI, Lai ZHAO, Jrjyan Jerry CHEN, Soo Young CHOI, Yujia ZHAI
  • Patent number: 12080725
    Abstract: Embodiments of the disclosure generally provide methods of forming a hybrid film stack that may be used as a capacitor layer or a gate insulating layer with a high dielectric constant as well as film qualities for display applications. In one embodiment, a thin film transistor structure include gate, source and drain electrodes formed on a substrate, and an insulating layer formed on a substrate, wherein the insulating layer is a hybrid film stack having a dielectric layer comprising a zirconium containing material disposed on an interface layer formed above or below the gate, source and drain electrodes.
    Type: Grant
    Filed: July 12, 2023
    Date of Patent: September 3, 2024
    Assignee: Applied Materials, Inc.
    Inventors: Xiangxin Rui, Lai Zhao, Jrjyan Jerry Chen, Soo Young Choi, Yujia Zhai
  • Patent number: 12041840
    Abstract: Embodiments of the present disclosure generally relate to methods for forming an organic light emitting diode (OLED) device. Forming the OLED device comprises depositing a first barrier layer on a substrate having an OLED structure disposed thereon. A first sublayer of a buffer layer is then deposited on the first barrier layer. The first sublayer of the buffer layer is cured with a mixed gas plasma. Curing the first sublayer comprises generating water from the mixed gas plasma in a process chamber in which the curing occurs. The deposition of the first sublayer and the curing of the first sublayer is repeated one or more times to form a completed buffer layer. A second barrier layer is then deposited on the completed buffer layer.
    Type: Grant
    Filed: May 6, 2021
    Date of Patent: July 16, 2024
    Assignee: Applied Materials, Inc.
    Inventors: Wen-Hao Wu, Jrjyan Jerry Chen
  • Patent number: 11967516
    Abstract: Embodiments of the disclosure include methods and apparatus for electrostatically coupling a mask to a substrate support in a deposition chamber. In one embodiment, a substrate support is disclosed that includes a substrate receiving surface, a recessed portion disposed about a periphery of the substrate receiving surface, an electrostatic chuck disposed below the substrate receiving surface, and a plurality of compressible buttons disposed within a respective opening formed in the recessed portion that form an electrical circuit with the electrostatic chuck.
    Type: Grant
    Filed: January 17, 2020
    Date of Patent: April 23, 2024
    Assignee: Applied Materials, Inc.
    Inventors: Jrjyan Jerry Chen, Sanjay D. Yadav, Tae Kyung Won, Jun Li, Shouqian Shao, Surendra Kanimihally Setty
  • Publication number: 20240120349
    Abstract: Embodiments of the disclosure generally provide methods of forming a capacitor layer or a gate insulating layer with high dielectric constant as well as low film current leakage and desired film qualities for display applications. In one embodiment, a thin film transistor structure includes a dielectric layer formed on a substrate, wherein the dielectric layer is a zirconium containing material comprising aluminum, and gate, source and drain electrodes formed on the substrate, wherein the gate, source and drain electrodes formed above or below the dielectric layer.
    Type: Application
    Filed: December 19, 2023
    Publication date: April 11, 2024
    Inventors: Xiangxin RUI, Lai ZHAO, Jrjyan Jerry CHEN, Soo Young CHOI, Yujia ZHAI
  • Patent number: 11894396
    Abstract: Embodiments of the disclosure generally provide methods of forming a capacitor layer or a gate insulating layer with high dielectric constant as well as low film current leakage and desired film qualities for display applications. In one embodiment, a thin film transistor structure includes a dielectric layer formed on a substrate, wherein the dielectric layer is a zirconium containing material comprising aluminum, and gate, source and drain electrodes formed on the substrate, wherein the gate, source and drain electrodes formed above or below the dielectric layer.
    Type: Grant
    Filed: January 7, 2022
    Date of Patent: February 6, 2024
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Xiangxin Rui, Lai Zhao, Jrjyan Jerry Chen, Soo Young Choi, Yujia Zhai
  • Publication number: 20230369354
    Abstract: Embodiments of the disclosure generally provide methods of forming a hybrid film stack that may be used as a capacitor layer or a gate insulating layer with a high dielectric constant as well as film qualities for display applications. In one embodiment, a thin film transistor structure include gate, source and drain electrodes formed on a substrate, and an insulating layer formed on a substrate, wherein the insulating layer is a hybrid film stack having a dielectric layer comprising a zirconium containing material disposed on an interface layer formed above or below the gate, source and drain electrodes.
    Type: Application
    Filed: July 12, 2023
    Publication date: November 16, 2023
    Inventors: Xiangxin RUI, Lai ZHAO, Jrjyan Jerry CHEN, Soo Young CHOI, Yujia ZHAI
  • Patent number: 11742362
    Abstract: Embodiments of the disclosure generally provide methods of forming a hybrid film stack that may be used as a capacitor layer or a gate insulating layer with a high dielectric constant as well as film qualities for display applications. In one embodiment, a thin film transistor structure include gate, source and drain electrodes formed on a substrate, and an insulating layer formed on a substrate, wherein the insulating layer is a hybrid film stack having a dielectric layer comprising a zirconium containing material disposed on an interface layer formed above or below the gate, source and drain electrodes.
    Type: Grant
    Filed: September 28, 2021
    Date of Patent: August 29, 2023
    Assignee: APPLIED MATERIAL, INC.
    Inventors: Xiangxin Rui, Lai Zhao, Jrjyan Jerry Chen, Soo Young Choi, Yujia Zhai
  • Patent number: D1001654
    Type: Grant
    Filed: December 8, 2021
    Date of Patent: October 17, 2023
    Assignee: Waymo LLC
    Inventors: YooJung Ahn, Jerry Chen, Toshihiro Fujimura, Jinseok Hwang, Joshua Newby, Zhaokun Wang
  • Patent number: D1012739
    Type: Grant
    Filed: December 8, 2021
    Date of Patent: January 30, 2024
    Assignee: Waymo LLC
    Inventors: YooJung Ahn, Jerry Chen, Toshihiro Fujimura, Jinseok Hwang, Joshua Newby, Zhaokun Wang
  • Patent number: D1017436
    Type: Grant
    Filed: December 10, 2021
    Date of Patent: March 12, 2024
    Assignee: Waymo LLC
    Inventors: YooJung Ahn, Jerry Chen, Toshihiro Fujimura, Jinseok Hwang, Joshua Newby, Zhaokun Wang
  • Patent number: D1037028
    Type: Grant
    Filed: January 10, 2024
    Date of Patent: July 30, 2024
    Assignee: Waymo LLC
    Inventors: Yoojung Ahn, Jerry Chen, Toshihiro Fujimura, Jinseok Hwang, Joshua Newby, Zhaokun Wang
  • Patent number: D1037881
    Type: Grant
    Filed: November 30, 2023
    Date of Patent: August 6, 2024
    Assignee: Waymo LLC
    Inventors: YooJung Ahn, Jerry Chen, Toshihiro Fujimura, Jinseok Hwang, Joshua Newby, Zhaokun Wang
  • Patent number: D1049889
    Type: Grant
    Filed: September 1, 2023
    Date of Patent: November 5, 2024
    Assignee: Waymo LLC
    Inventors: YooJung Ahn, Jerry Chen, Toshihiro Fujimura, Jinseok Hwang, Joshua Newby, Zhaokun Wang