Abstract: A process for fabricating a semiconductor device having reduced capacitance for high frequency circuit protection is disclosed that comprises first forming an n+ buried layer in a p-type substrate by depositing n-type dopant on the top surface of the substrate and then drive in or by implanting n-type material into the substrate, and then growing an n-type epitaxial layer atop the n+ buried layer as the device layer. Trenches that surrounds the device region with depth extending from the top surface, going through the n+ buried layer and reaching down to the substrate are then formed and then an n+ layer on the sidewalls of the trenches is formed by diffusion or ion implantation. The trenches are then filled by growing a layer of thermal oxide on the sidewalls of the trenches and followed by deposition of plasma enhanced oxide, nitride, TEOS oxide CVD oxide, or polysilicon into the trenches and then planarizing the top surface by plasma etch back or polishing.

Abstract: Compositions and methods for fabricating a tissue-engineered cartilage construct comprising: providing a cell sample comprising a plurality of chondrocytes; culturing the cell sample to produce a tissue-engineered cartilage construct; and treating the tissue-engineered cartilage construct, wherein treating the tissue-engineered cartilage construct comprises the use of a biochemical reagent, a mechanical force, hydrostatic pressure, or any combination thereof.

Abstract: A football includes an inflatable bladder; a layer of wound filament fibers surrounding the inflatable bladder; a carcass surrounding the layer of wound filament fibers, including raised areas and recessed areas and a plurality of panels positioned within the recessed areas of the carcass. An outer surface of the plurality of panels is flush with an outer surface of the raised areas of the carcass, which includes the appearance of at least one of stitching, seams and a pebbled outer surface. A method of manufacturing a football includes providing an inflatable bladder, winding filament fibers around the bladder and molding a carcass around the fibers. The carcass is molded to include recessed areas, raised areas and the appearance of at least one of seams, stitching and a pebbled surface on the raised areas. Panels are then laminated to the recessed areas of the carcass.

Abstract: Methods for inducing differentiation of dermis-derived cells to serve as a source of chondrocytes and associated methods of use in forming tissue engineered constructs. One example of a method is a method for inducing differentiation of cells into chondrocytes comprising providing aggrecan sensitive isolated dermis cells and seeding the cells onto an aggrecan coated surface.

Abstract: Methods for forming tissue engineered constructs without the use of scaffolds and associated methods of use in tissue replacement. One example of a method may comprise providing a shaped hydrogel negative mold; seeding the mold with cells; allowing the cells to self-assemble in the mold to form a tissue engineered construct.

Abstract: Methods for inducing differentiation of human embryonic stem cells into chondrocytes for use in tissue engineering applications are provided. One example of a method is a method for inducing differentiation of human embryonic stem cells into chondrocytes comprising aggregating undifferentiated human embryonic stem cells to form embryoid bodies; and culturing the embryoid bodies in culture medium in the presence of growth factors that induce chondrogenic differentiation of the embryoid bodies.

Abstract: A multi-chip light emitting diode (LED) package having a plurality of LED chips, a substrate, and a plurality of conductive paste layers is provided. The substrate has at least two hollow areas with conductive patterns formed on a bottom surface thereon. The conductive paste layers are pasted on the bottom surfaces of the hollow areas respectively for fixing the LED chips and having the LED chips electrically connected to the conductive patterns. The LED chips in the different hollow areas are electrically connected in serial.

Abstract: A method for manufacturing a semiconductor device includes forming a first layer adjacent a semiconductor substrate. The first layer may comprise oxygen. The first layer may be subjected to a material comprising nitrogen to form a second layer. The second layer may be oxidized to form a dielectric layer which may have a relatively uniform nitrogen profile. Rapid thermal oxidation may be used to form the dielectric layer. The dielectric layer may have a physical thickness greater than a physical thickness of the second layer.

Abstract: A method for manufacturing a semiconductor device includes forming a first layer adjacent a semiconductor substrate. The first layer may comprise oxygen. The first layer may be subjected to a material comprising nitrogen to form a second layer. The second layer may be oxidized to form a dielectric layer which may have a relatively uniform nitrogen profile. Rapid thermal oxidation may be used to form the dielectric layer. The dielectric layer may have a physical thickness greater than a physical thickness of the second layer.