Abstract: A method for making a chalcogenide glass waveguide in a liquid crystal-based non-mechanical beam steering device that permits steering in the mid-wave infrared. The waveguide core, the subcladding, or both comprise a chalcogenide glass. A mask is used to produce a tapered subcladding. Also disclosed is the related non-mechanical beam steering device that includes a chalcogenide waveguide.

Abstract: A graphene and liquid crystal device comprising a substrate, a layer of graphene on the substrate, and a layer of liquid crystal on the layer of graphene. A method of making a graphene and liquid crystal device comprising the steps of providing a substrate, depositing a layer of graphene on the substrate, and depositing a layer of liquid crystals on the layer of graphene.

Abstract: The invention relates to methods for fabricating antireflective surface structures (ARSS) on an optical element using a three-dimensional film layer applied to the surface of the optical element. The methods beneficially permit materials that do not exhibit local variation in physical and chemical properties to be provided with ARSS. Optical elements having ARSS on at least one surface are also provided.

Abstract: A method of: providing one or more spent sputtering targets comprising a photovoltaic compound and grinding the photovoltaic compound in an inert environment to form a powder.

Abstract: The invention relates to methods for fabricating antireflective surface structures (ARSS) on optical elements. Optical elements having ARSS on at least one surface are also provided.

Abstract: The invention relates to methods for fabricating antireflective surface structures (ARSS) on an optical element using a seed layer of material deposited on the surface of the optical element. The seed layer is removed during or after the etching, and serves to control etching time as well as the transmission region of the optical element having ARSS. Optical elements having ARSS on at least one surface are also provided.

Abstract: An apparatus for containment of a molten substance using non-wetting materials comprising a crucible, and a layer of a non-wetting material deposited onto the crucible, wherein said layer of non-wetting material is deposited near the rim of the crucible and wherein the non-wetting material is deposited onto the crucible by one selected from the group consisting of RF magnetron sputtering, chemical vapor deposition, thermal spray, thermal evaporation, dip coating of precursors followed by thermal treatment, and spray coating of precursors followed by thermal treatment.

Abstract: A method and apparatus for forming a thin film of a copper indium gallium selenide (CIGS)-type material are disclosed. The method includes providing first and second targets in a common sputtering chamber. The first target includes a source of CIGS material, such as an approximately stoichiometric polycrystalline CIGS material, and the second target includes a chalcogen, such as selenium, sulfur, tellurium, or a combination of these elements. The second target provides an excess of chalcogen in the chamber. This can compensate, at least in part, for the loss of chalcogen from the CIGS-source in the first target, resulting in a thin film with a controlled stoichiometry which provides effective light absorption when used in a solar cell.

Abstract: A method for achieving alignment and optical switching of a liquid crystal (LC) layer that is deposited on chalcogenide glass (ChG). Direct brushing of ChG produces an effective LC alignment layer. Also disclosed is the related waveguide assembly for achieving alignment and optical switching of a liquid crystal (LC) layer deposited on chalcogenide glass (ChG).

Abstract: A method of containing molten aluminum using non-wetting materials comprising depositing MgAl2O4, or one selected from an oxide, Al2O3, nitride, AlN, BN, carbide, and SiC, onto a crucible. An apparatus for containment of molten aluminum using non-wetting materials comprising a layer of MgAl2O4, or one selected from an oxide, Al2O3, nitride, AlN, BN, carbide, and SiC, deposited onto a crucible.

Abstract: A passivated iron disulfide (FeS2) surface encapsulated by an epitaxial zinc sulfide (ZnS) capping layer or matrix is provided. Also disclosed are methods for passivating the surface of crystalline iron disulfide by encapsulating it with an epitaxial zinc sulfide capping layer or matrix. Additionally disclosed is a photovoltaic (PV) device incorporating FeS2 encapsulated by ZnS.

Abstract: A method for passivating the surface of crystalline iron disulfide (FeS2) by encapsulating it within an epitaxial zinc sulfide (ZnS) matrix. Also disclosed is the related product comprising FeS2 encapsulated by a ZnS matrix in which the sulfur atoms at the FeS2 surfaces are passivated. Additionally disclosed is a photovoltaic (PV) device incorporating FeS2 encapsulated by a ZnS matrix.

Abstract: The present invention provides a specific gradient-optical-index porous (GRIP) layer coating on inorganic optical substrate surfaces, and the fabrication method used to create the GRIP layer coating. The method consists of two major processing steps: (1) the co-deposition of an optical index-matching material and a mass density-modulating material, followed by (2) the sacrificial etch of the mass-density-modulating material to reveal a GRIP surface. The method is designed for use with crystalline, polycrystalline, and dry or wet etch-resistant substrate materials, where anti-reflective (AR) solutions using AR surface structures (ARSSs) do not exist. These coatings are designed to minimize Fresnel reflectivity of the original substrate surfaces, using a single porous layer matched to the optical index of the original substrate material.

Abstract: A method for passivating the surface of crystalline iron disulfide (FeS2) by encapsulating it within an epitaxial zinc sulfide (ZnS) matrix. Also disclosed is the related product comprising FeS2 encapsulated by a ZnS matrix in which the sulfur atoms at the FeS2 surfaces are passivated. Additionally disclosed is a photovoltaic (PV) device incorporating FeS2 encapsulated by a ZnS matrix.

Abstract: A passivated iron disulfide (FeS2) surface encapsulated by an epitaxial zinc sulfide (ZnS) capping layer or matrix is provided. Also disclosed are methods for passivating the surface of crystalline iron disulfide by encapsulating it with an epitaxial zinc sulfide capping layer or matrix. Additionally disclosed is a photovoltaic (PV) device incorporating FeS2 encapsulated by ZnS.

Abstract: A p-type transparent conductive material can comprise a thin film of BCSF on a substrate where the film has a conductivity of at least 1 S/cm. The substrate may be a plastic substrate, such as a polyethersulfone, polyethylene terephthalate, polyimide, or some other suitable plastic or polymeric substrate.

Abstract: A system and method for creating an anti-reflective surface structure on an optical device includes a shim including a textured pattern, wherein the ship is configured to stamp the optical device with the textured pattern, a connector configured to place the optical device in proximity to the shim and apply a force to the optical device against the shim, and a laser source configured to heat the optical device by generating and applying a laser beam to the optical device when the optical device is placed in proximity to the shim.

Abstract: A composition of matter and method of forming copper indium gallium sulfide (CIGS), copper indium gallium selenide (CIGSe), or copper indium gallium telluride thin film via conversion of layer-by-layer (LbL) assembled Cu—In—Ga oxide (CIGO) nanoparticles and polyelectrolytes. CIGO nanoparticles are created via a flame-spray pyrolysis method using metal nitrate precursors, subsequently coated with polyallylamine (PAH), and dispersed in aqueous solution. Multilayer films are assembled by alternately dipping a substrate into a solution of either polydopamine (PDA) or polystyrenesulfonate (PSS) and then in the CIGO-PAH dispersion to fabricate films as thick as 1-2 microns. After LbL deposition, films are oxidized to remove polymer and sulfurized, selenized, or tellurinized to convert CIGO to CIGS, CIGSe, or copper indium gallium telluride.

Abstract: A method for passivating the surface of crystalline iron disulfide (FeS2) by encapsulating it in crystalline zinc sulfide (ZnS). Also disclosed is the related product comprising FeS2 encapsulated by ZnS in which the sulfur atoms at the FeS2 surfaces are passivated. Additionally disclosed is a photovoltaic (PV) device incorporating FeS2 encapsulated by ZnS.

Abstract: A method for forming a wet-etchable, sacrificial lift-off layer or layers compatible with high temperature processing, a sacrificial layer, defined as consisting of a single film of one material or multiple films of multiple materials, that can tolerate high temperatures, is deposited on a substrate, called the original substrate, by sputtering or another suitable technique (e.g. evaporation, pulsed laser deposition, wet chemistry, etc.). Intermediate steps result in a lift-off layer attached to the lift-off substrate, that allow for separating the product from the original substrate.