Abstract: Fluid analyte sensors include a photoelectrocatalytic element that is configured to be exposed to the fluid, if present, and to respond to photoelectrocatalysis of at least one analyte in the fluid that occurs in response to impingement of optical radiation upon the photoelectrocatalytic element. A semiconductor light emitting source is also provided that is configured to impinge the optical radiation upon the photoelectrocatalytic element. Related solid state devices and sensing methods are also described.

Abstract: Systems and methods for monitoring various physiological and environmental factors, as well as systems and methods for using this information for a plurality of useful purposes, are provided. Real-time, noninvasive health and environmental monitors include a plurality of compact sensors integrated within small, low-profile devices. Physiological and environmental data is collected and wirelessly transmitted into a wireless network, where the data is stored and/or processed. This information is then used to support a variety of useful methods, such as clinical trials, marketing studies, biofeedback, entertainment, and others.

Abstract: Wearable apparatus for monitoring various physiological and environmental factors are provided. Real-time, noninvasive health and environmental monitors include a plurality of compact sensors integrated within small, low-profile devices, such as earpiece modules. Physiological and environmental data is collected and wirelessly transmitted into a wireless network, where the data is stored and/or processed.

Abstract: A method for doping impurities into a device layer is provided. The method includes providing a carbonized dopant layer over a device layer, wherein the carbonized dopant layer comprises one or more dopant impurities, and heat treating the carbonized dopant layer to thermally diffuse the dopant impurities into the device layer.

Abstract: A method of forming a channel in a semiconductor device including forming an opening in a masking layer to expose a portion of an underlying semiconductor layer through the opening is provided. The method further includes disposing a screening layer and implanting a first type of ions in the portion of the underlying semiconductor layer through the screening layer and through the opening in the masking layer. A second type of ions are implanted in the portion of the underlying semiconductor layer through the screening layer and through the opening in the masking layer at an oblique ion implantation angle wherein a lateral spread of second type ions is greater than a lateral spread of first type ions. Semiconductor devices fabricated in accordance to above said method is also provided.

Abstract: A method of forming a vertical MOSFET device includes forming a trench within a drift layer substrate, the drift layer comprising a first polarity type, the trench generally defining a well region of a second polarity type opposite the first polarity type. An ohmic contact layer is formed within a bottom surface of the trench, the ohmic contact layer comprising a material of the second polarity type. A layer of the second polarity type is epitaxially grown over the drift layer, sidewall surfaces of the trench, and the ohmic contact layer. A layer of the first polarity type is epitaxially grown over the epitaxially grown layer of the second polarity type so as to refill the trench, and the epitaxially grown layers of the first and second polarity type are planarized so as to expose an upper surface of the drift layer substrate.

Abstract: A FET includes elongated, mutually parallel source regions separated by gate and drain regions. Conductive bridges extend over the gate and drain regions and not in electrical contact therewith to electrically and thermally interconnect the sources. A layer of dielectric is applied over surfaces, and an aperture is defined over the bridges. A thick layer of metal is applied over and in thermal and electrical contact with the bridges. Electrical and thermal connections can be made to the thick metal.

Abstract: There is provided an electronic device. The electronic device includes at least one epitaxial semiconductor layer disposed on a single crystal substrate comprised of gallium nitride having a dislocation density less than about 105 per cm2. A method of forming an electronic device is also provided. The method includes providing a single crystal substrate comprised of gallium nitride having a dislocation density less than about 105 per cm2, and homoepitaxially forming at least one semiconductor layer on the substrate.