Abstract: A display device includes a display panel, a touch sensing layer which is disposed on a first surface of the display panel and senses a touch input of a user, a first vibration device which is disposed on a second surface of the display panel and generates vibration according to driving voltages. The first vibration device generates a first vibration in response to a first touch input of the user to provide a first haptic feedback.

Abstract: A display device includes a display panel, a touch sensing layer which is disposed on a first surface of the display panel and senses a touch input of a user, a first vibration device which is disposed on a second surface of the display panel and generates vibration according to driving voltages. The first vibration device generates a first vibration in response to a first touch input of the user to provide a first haptic feedback.

Abstract: Provided is a composition for preventing and treating lipid-related metabolic diseases, the composition comprising, as an active ingredient, Lactobacillus plantarum ATG-K2 or Lactobacillus plantarum ATG-K6 isolated from fermented vegetables.

Abstract: A system for automating the processing of a sample for analysis includes a sample processing unit configured to manufacture a plurality of unit wafers by cutting an analysis target wafer and to manufacture a sample for analysis by applying at least one process to one of the plurality of unit wafers, a sample storage unit including a loading area having a plurality of reception holders, on which a unit wafer and the sample for analysis have been loaded, that are carried in and out, and a sample conveying unit configured to convey the analysis target wafer, the unit wafer, and the sample for analysis respectively between the sample processing unit and the sample storage unit.

Abstract: This application relates to an energy storage device. In one embodiment, the energy storage device includes an electrode unit including first and second current collectors that are separated by a separator, first and second terminals respectively connected to the first and second current collectors and a case accommodating the electrode unit. The energy storage device also includes a flexible closure covering the case and having first and second through-holes passing therethrough and exposing the first and second terminals to the environment, wherein the flexible closure contains about 15 wt % or less of SiO2. According to some embodiments, since the weight percentage of SiO2 is significantly reduced and thus, the amount and degree of the SiO2 reduction significantly decreases, a structural deformation of the flexible closure at a microscopic level is minimized. Accordingly, a wetting phenomenon is significantly reduced, and thus the life span of an energy storage device significantly increases.

Abstract: A method for fabricating a semiconductor device includes: forming a mold stack pattern including a plurality of openings in an upper portion of a substrate and including a mold layer and a supporter layer which are stacked; forming a bottom electrode layer filling the plurality of the openings and covering the supporter layer; forming a filler portion disposed inside the plurality of the openings, a barrier portion extended upwardly from the filler portion, and an electrode cutting portion exposing a surface of the supporter layer by selectively etching the bottom electrode layer; forming a supporter by using the barrier portion as an etch barrier and etching the supporter layer exposed by the electrode cutting portion; selectively removing the barrier portion to form a hybrid pillar-type bottom electrode disposed inside the plurality of the openings; and removing the mold layer.

Abstract: A method for fabricating a semiconductor device includes: forming a mold stack pattern including a plurality of openings in an upper portion of a substrate and including a mold layer and a supporter layer which are stacked; forming a bottom electrode layer filling the plurality of the openings and covering the supporter layer; forming a filler portion disposed inside the plurality of the openings, a barrier portion extended upwardly from the filler portion, and an electrode cutting portion exposing a surface of the supporter layer by selectively etching the bottom electrode layer; forming a supporter by using the barrier portion as an etch barrier and etching the supporter layer exposed by the electrode cutting portion; selectively removing the barrier portion to form a hybrid pillar-type bottom electrode disposed inside the plurality of the openings; and removing the mold layer.

Abstract: A display device includes a display panel, a touch sensing layer which is disposed on a first surface of the display panel and senses a touch input of a user, a first vibration device which is disposed on a second surface of the display panel and generates vibration according to driving voltages. The first vibration device generates a first vibration in response to a first touch input of the user to provide a first haptic feedback.

Abstract: A display device includes a display panel, a touch sensing layer which is disposed on a first surface of the display panel and senses a touch input of a user, a first vibration device which is disposed on a second surface of the display panel and generates vibration according to driving voltages. The first vibration device generates a first vibration in response to a first touch input of the user to provide a first haptic feedback.

Abstract: This application relates to an energy storage device. In one embodiment, the energy storage device includes an electrode unit including first and second current collectors that are separated by a separator, first and second terminals respectively connected to the first and second current collectors and a case accommodating the electrode unit. The energy storage device also includes a flexible closure covering the case and having first and second through-holes passing therethrough and exposing the first and second terminals to the environment, wherein the flexible closure contains about 15 wt % or less of SiO2. According to some embodiments, since the weight percentage of SiO2 is significantly reduced and thus, the amount and degree of the SiO2 reduction significantly decreases, a structural deformation of the flexible closure at a microscopic level is minimized. Accordingly, a wetting phenomenon is significantly reduced, and thus the life span of an energy storage device significantly increases.

Abstract: A method for fabricating a semiconductor device includes: forming a mold stack pattern including a plurality of openings in an upper portion of a substrate and including a mold layer and a supporter layer which are stacked; forming a bottom electrode layer filling the plurality of the openings and covering the supporter layer; forming a filler portion disposed inside the plurality of the openings, a barrier portion extended upwardly from the filler portion, and an electrode cutting portion exposing a surface of the supporter layer by selectively etching the bottom electrode layer; forming a supporter by using the barrier portion as an etch barrier and etching the supporter layer exposed by the electrode cutting portion; selectively removing the barrier portion to form a hybrid pillar-type bottom electrode disposed inside the plurality of the openings; and removing the mold layer.

Abstract: A method for fabricating a semiconductor device includes: forming a mold stack pattern including a plurality of openings in an upper portion of a substrate and including a mold layer and a supporter layer which are stacked; forming a bottom electrode layer filling the plurality of the openings and covering the supporter layer; forming a filler portion disposed inside the plurality of the openings, a barrier portion extended upwardly from the filler portion, and an electrode cutting portion exposing a surface of the supporter layer by selectively etching the bottom electrode layer; forming a supporter by using the barrier portion as an etch barrier and etching the supporter layer exposed by the electrode cutting portion; selectively removing the barrier portion to form a hybrid pillar-type bottom electrode disposed inside the plurality of the openings; and removing the mold layer.

Abstract: A display device includes a display panel, a touch sensing layer which is disposed on a first surface of the display panel and senses a touch input of a user, a first vibration device which is disposed on a second surface of the display panel and generates vibration according to driving voltages. The first vibration device generates a first vibration in response to a first touch input of the user to provide a first haptic feedback.

Abstract: Disclosed herein is an electric double layer device including a urethane potting unit (50) for filling the gap between a portion of a first terminal (21) that is exposed out of a rubber cap (40) and a first through hole (41) and the gap between a portion of a second terminal (22) that is exposed out of the rubber cap and a second through hole (42), wherein an aluminum terminal (A) constituting each of the first terminal (21) and the second terminal (22) is anodized such that an aluminum oxide film (Al) is formed on the aluminum terminal, whereby the lifespan of the electric double layer device is relatively increased.

Abstract: A method for fabricating a semiconductor device includes: forming a mold stack pattern including a plurality of openings in an upper portion of a substrate and including a mold layer and a supporter layer which are stacked; forming a bottom electrode layer filling the plurality of the openings and covering the supporter layer; forming a filler portion disposed inside the plurality of the openings, a barrier portion extended upwardly from the filler portion, and an electrode cutting portion exposing a surface of the supporter layer by selectively etching the bottom electrode layer; forming a supporter by using the barrier portion as an etch barrier and etching the supporter layer exposed by the electrode cutting portion; selectively removing the barrier portion to form a hybrid pillar-type bottom electrode disposed inside the plurality of the openings; and removing the mold layer.

Abstract: A method for fabricating a semiconductor device includes: forming a mold stack pattern including a plurality of openings in an upper portion of a substrate and including a mold layer and a supporter layer which are stacked; forming a bottom electrode layer filling the plurality of the openings and covering the supporter layer; forming a filler portion disposed inside the plurality of the openings, a barrier portion extended upwardly from the filler portion, and an electrode cutting portion exposing a surface of the supporter layer by selectively etching the bottom electrode layer; forming a supporter by using the barrier portion as an etch barrier and etching the supporter layer exposed by the electrode cutting portion; selectively removing the barrier portion to form a hybrid pillar-type bottom electrode disposed inside the plurality of the openings; and removing the mold layer.

Abstract: A method for fabricating a semiconductor device includes: forming a mold stack pattern including a plurality of openings in an upper portion of a substrate and including a mold layer and a supporter layer which are stacked; forming a bottom electrode layer filling the plurality of the openings and covering the supporter layer; forming a filler portion disposed inside the plurality of the openings, a barrier portion extended upwardly from the filler portion, and an electrode cutting portion exposing a surface of the supporter layer by selectively etching the bottom electrode layer; forming a supporter by using the barrier portion as an etch barrier and etching the supporter layer exposed by the electrode cutting portion; selectively removing the barrier portion to form a hybrid pillar-type bottom electrode disposed inside the plurality of the openings; and removing the mold layer.

Abstract: A method for fabricating a semiconductor device includes: forming a mold stack pattern including a plurality of openings in an upper portion of a substrate and including a mold layer and a supporter layer which are stacked; forming a bottom electrode layer filling the plurality of the openings and covering the supporter layer; forming a filler portion disposed inside the plurality of the openings, a barrier portion extended upwardly from the filler portion, and an electrode cutting portion exposing a surface of the supporter layer by selectively etching the bottom electrode layer; forming a supporter by using the barrier portion as an etch barrier and etching the supporter layer exposed by the electrode cutting portion; selectively removing the barrier portion to form a hybrid pillar-type bottom electrode disposed inside the plurality of the openings; and removing the mold layer.

Abstract: A method for fabricating a semiconductor device includes: forming a mold stack pattern including a plurality of openings in an upper portion of a substrate and including a mold layer and a supporter layer which are stacked; forming a bottom electrode layer filling the plurality of the openings and covering the supporter layer; forming a filler portion disposed inside the plurality of the openings, a barrier portion extended upwardly from the filler portion, and an electrode cutting portion exposing a surface of the supporter layer by selectively etching the bottom electrode layer; forming a supporter by using the barrier portion as an etch barrier and etching the supporter layer exposed by the electrode cutting portion; selectively removing the barrier portion to form a hybrid pillar-type bottom electrode disposed inside the plurality of the openings; and removing the mold layer.

Abstract: One or more embodiments of this disclosure provide an image output method. The image output method includes receiving image data for a plurality of image frames and caption data linked with the plurality of image frames. The method also includes outputting parsing the caption data to extract link information according to a data type from the caption data. The method also includes outputting a connection object or a list, for verifying the link information while the plurality of image frames are output on a display of the electronic device.