Abstract: A structure for reducing stress for vias and a fabricating method thereof are provided. One or more wires or vias in the thickness direction are enframed with the use of a stress block in a lattice structure to be isolated from being directly contacted with the major portion of insulating materials with a high coefficient of thermal expansion. Thus, the shear stress resulting from temperature loading can be blocked or absorbed by the stress block.

Abstract: A structure for protecting electronic package contacts and the method for manufacturing the same are provided. The protective layer is used to prevent stresses from being gathered within electronic contacts on the chip and the vias for rerouting so as to raise the reliability of the conductor trace line in the electronic package structure. The protecting layer is formed in the wafer-level manufacturing processes by coating, depositing, and printing. The method is suitable for all kinds of electronic package structures owing to its high compatibility.

Abstract: The invention is a silicon pressure micro-sensing device and the fabrication process thereof. The silicon pressure micro-sensing device includes a pressure chamber, and is constituted of a P-type substrate with a taper chamber and an N-type epitaxial layer thereon. On the N-type epitaxial layer are a plurality of piezo-resistance sensing units which sense deformation caused by pressure. The fabrication pressure of the silicon pressure micro-sensing device includes a step of first making a plurality of holes on the N-type epitaxial layer to reach the P-type substrate beneath. Then, by an anisotropic etching stop technique, in which etchant pass through the holes, a taper chamber is formed in the P-type substrate. Finally, an insulating material is applied to seal the holes, thus attaining the silicon pressure micro-sensing device that is able to sense pressure differences between two ends thereof.

Abstract: The invention is a silicon pressure micro-sensing device and the fabrication process thereof. The silicon pressure micro-sensing device includes a pressure chamber, and is constituted of a P-type substrate with a taper chamber and an N-type epitaxial layer thereon. On the N-type epitaxial layer are a plurality of piezo-resistance sensing units which sense deformation caused by pressure. The fabrication pressure of the silicon pressure micro-sensing device includes a step of first making a plurality of holes on the N-type epitaxial layer to reach the P-type substrate beneath. Then, by an anisotropic etching stop technique, in which etchant pass through the holes, a taper chamber is formed in the P-type substrate. Finally, an insulating material is applied to seal the holes, thus attaining the silicon pressure micro-sensing device that is able to sense pressure differences between two ends thereof.