Abstract: A semiconductor device including a substrate; a trench formed within the substrate; a gate insulating film formed conformally along a portion of a surface of the trench; a gate electrode formed on the gate insulating film and filling a portion of the trench; a capping film formed on the gate electrode and filling the trench; and an air gap formed between the capping film and the gate insulating film.

Abstract: The present specification relates to a polymer electrolyte membrane, a membrane electrode assembly including the same, and a fuel cell including the membrane electrode assembly.

Abstract: A semiconductor device is provided. The semiconductor device includes an upper interlayer insulating layer disposed on a substrate. A first electrode spaced apart from the upper interlayer insulating layer is disposed on the substrate. A contact structure penetrating the upper interlayer insulating layer is disposed on the substrate. An upper support layer having a first portion covering an upper surface of the upper interlayer insulating layer, to surround an upper side surface of the contact structure, and a second portion extending in a horizontal direction from the first portion and surrounding an upper side surface of the first electrode, is disposed. A dielectric conformally covering the first electrode and a second electrode on the dielectric are disposed.

Abstract: A display apparatus includes a wire grid pattern layer and a capping layer. The wire grid pattern layer includes protrusions having the same shape and spaced at uniform intervals to form a wire grid. The capping layer is on the wire grid pattern layer. The protrusions include metal, and the capping layer includes metal oxide which is an oxide of the metal.

Abstract: A multi-window control method and an electronic device supporting the same is provided. The multi-window control method includes changing a size of at least one specific window among a plurality of windows, and altering a focus to the at least one specific window based on a changed size of the at least one specific window.

Abstract: The present invention attenuates noise appearing at neighboring electrodes by causing a rising edge of one clock signal to be synchronized with a falling edge of another one clock signal when a clock signal for gate driving is generated.

Abstract: A multi-window control method and an electronic device supporting the same is provided. The multi-window control method includes changing a size of at least one specific window among a plurality of windows, and altering a focus to the at least one specific window based on a changed size of the at least one specific window.

Abstract: Disclosed is an energy storage system and a temperature control method for the same. The energy storage system includes a first battery group having a plurality of sections, which respectively have at least one battery module and at least one cooling fan; at least one first slave battery management system (BMS) coupled to the first battery group to monitor a temperature value of battery modules included in the first battery group for each section and generate first temperature information having the monitored temperature value for each section; a master BMS configured to transmit the first temperature information according to a predetermined rule; and a control unit configured to output a first control signal for adjusting a rotation speed of at least one cooling fan provided in at least one of the plurality of sections, based on the first temperature information transmitted from the master BMS.

Abstract: A method of fabricating a semiconductor device, the method including etching a portion of a substrate including a first region and a second region to form a device isolation trench; forming a device isolation layer defining active regions by sequentially stacking a first insulating layer, a second insulating layer, and a third insulating layer on an inner surface of the device isolation trench; forming word lines buried in the substrate of the first region, the word lines extending in a first direction to intersect the active region of the first region, the word lines being spaced apart from each other; forming a first mask layer covering the word lines on the substrate of the first region, the first mask layer exposing the substrate of the second region; forming a channel layer on the substrate of the second region; and forming a gate electrode on the channel layer.

Abstract: A display device includes a first substrate, a first wavelength conversion layer and a second wavelength conversion layer disposed on the first substrate and spaced apart from each other, and a polarization layer disposed on the first wavelength conversion layer and the second wavelength conversion layer, the polarization layer including a reflection portion and a transmitting portion, in which the reflection portion overlaps a gap formed between the first wavelength conversion layer and the second wavelength conversion layer.

Abstract: A temperature control apparatus for an energy storage system, which includes a battery module, a temperature sensor and an HVAC system, includes a first communication unit configured to receive first temperature information indicating a temperature of the battery module from a battery management system combined with the battery module; a second communication unit configured to receive from the temperature sensor second temperature information indicating a temperature measured by the temperature sensor; and a control unit connected with the first communication unit and the second communication unit.

Abstract: A three-terminal nano-electro-mechanical field-effect transistor (NEMFET) includes a source electrode, a gate electrode, a drain electrode and a nanoelectromechanically suspended channel bridging the source electrode and the drain electrode. The nanoelectromechanically suspended channel includes a moveable nanowire and a dielectric coating on a surface of the nanowire facing the gate electrode. A thickness of a gap between the nanowire and the gate electrode is determined by a thickness of the dielectric coating.

Abstract: A touch screen panel includes: a first touch electrode disposed on a substrate and extending in a first direction, the first touch electrode including first mesh patterns formed of crossing metal wirings including fine patterns; and a second touch electrode disposed on the substrate and extending in a second direction crossing the first direction, the second touch electrode including second mesh patterns formed of crossing of metal wirings including fine patterns.

Abstract: The present application relates to a composite electrolyte membrane and a method for manufacturing the same. The composite electrolyte membrane according to the present application includes: a poly(arylene ether sulfone) copolymer including the repeating unit represented by Chemical Formula 1 and the repeating unit represented by Chemical Formula 2; and a core-shell particle including an inorganic particle core and a basic organic polymer shell.

Abstract: The present invention relates to a technique for outputting threshold voltages by properly changing the threshold voltages such that the threshold voltages can protect low-voltage driving elements within an analog to digital converter when the threshold voltages of an OLED display panel are sensed and outputted to the analog to digital converter. The present invention comprises: a sampling capacitor which samples threshold voltages sensed and inputted from an organic light-emitting diode on a display panel; a charge-sharing capacitor which charges and shares the threshold voltages sampled from the sampling capacitor, or solely charges the threshold voltages to bypass the threshold voltages; and a sample-and-hold unit which has a plurality of switches for performing switching operations for the sampling operation of the sampling capacitor and the charging and the sharing of the charge-sharing capacitor, and scales the threshold voltages to threshold voltage areas having a certain value or less.

Abstract: A touch screen panel including a touch electrode disposed on a base substrate, the touch electrode including a plurality of mesh patterns formed by crossing of metal wirings. The mesh patterns include a main electrode pattern and a buffer pattern overlapping the main electrode pattern, the buffer pattern having a thickness greater than 20% of a thickness of the main electrode pattern and less than 30% of a thickness of the main electrode pattern.

Abstract: The present invention provides a gamma voltage supply circuit capable of stably supplying a gamma voltage in response to the change of external voltage and a power management IC including the same. The gamma voltage supply circuit generates a regulating voltage using an internal voltage which is not influenced by the variation in load of a source driver IC, and generates a gamma voltage using the regulating voltage.

Abstract: A touch screen panel and a method of manufacturing the same. The touch screen panel includes: a plurality of touch electrodes disposed in a touch area of a substrate, the touch electrodes configured to sense a touch; and a connecting wire connected with the touch electrode and having a pad connected to one end. The connecting wire includes a first wire layer made of a metal nano wire disposed on the substrate, a second wire layer made of a first transparent conductive material, a third wire layer disposed on an upper surface of the second pad and made of a second transparent conductive material, and a fourth wire layer made of aluminum (Al) disposed on the third pad.

Abstract: A semiconductor device includes a semiconductor substrate including a well dopant layer having a first conductivity type, a gate electrode on the well dopant layer, a channel dopant layer in the well dopant layer and spaced apart from a top surface of the semiconductor substrate, a channel region between the gate electrode and the channel dopant layer, and source/drain regions in the well dopant layer at both sides of the gate electrode. The channel dopant layer and the channel region have the first conductivity type. The source/drain regions have a second conductivity type. A concentration of dopants having the first conductivity type in the channel dopant layer is higher than a concentration of dopants having the first conductivity type in the channel region. The semiconductor device may be used in a sense amplifier of a memory device.

Abstract: The purpose of the present invention is to solve the problems of conventional high frequency plasma torches and develop a plasma torch which enables quick quenching of high frequency plasma and which overcomes instability resulting from the quick quenching. To accomplish the abovementioned objective, according to one embodiment of the present invention, disclosed is an electromagnetic wave high frequency hybrid plasma torch.