Abstract: The present application relates to a composite electrolyte membrane and a method for manufacturing the same. The composite electrolyte membrane according to the present application includes: a poly(arylene ether sulfone) copolymer including the repeating unit represented by Chemical Formula 1 and the repeating unit represented by Chemical Formula 2; and a core-shell particle including an inorganic particle core and a basic organic polymer shell.

Abstract: The present invention relates to a technique for outputting threshold voltages by properly changing the threshold voltages such that the threshold voltages can protect low-voltage driving elements within an analog to digital converter when the threshold voltages of an OLED display panel are sensed and outputted to the analog to digital converter. The present invention comprises: a sampling capacitor which samples threshold voltages sensed and inputted from an organic light-emitting diode on a display panel; a charge-sharing capacitor which charges and shares the threshold voltages sampled from the sampling capacitor, or solely charges the threshold voltages to bypass the threshold voltages; and a sample-and-hold unit which has a plurality of switches for performing switching operations for the sampling operation of the sampling capacitor and the charging and the sharing of the charge-sharing capacitor, and scales the threshold voltages to threshold voltage areas having a certain value or less.

Abstract: A touch screen panel including a touch electrode disposed on a base substrate, the touch electrode including a plurality of mesh patterns formed by crossing of metal wirings. The mesh patterns include a main electrode pattern and a buffer pattern overlapping the main electrode pattern, the buffer pattern having a thickness greater than 20% of a thickness of the main electrode pattern and less than 30% of a thickness of the main electrode pattern.

Abstract: The present invention provides a gamma voltage supply circuit capable of stably supplying a gamma voltage in response to the change of external voltage and a power management IC including the same. The gamma voltage supply circuit generates a regulating voltage using an internal voltage which is not influenced by the variation in load of a source driver IC, and generates a gamma voltage using the regulating voltage.

Abstract: A touch screen panel and a method of manufacturing the same. The touch screen panel includes: a plurality of touch electrodes disposed in a touch area of a substrate, the touch electrodes configured to sense a touch; and a connecting wire connected with the touch electrode and having a pad connected to one end. The connecting wire includes a first wire layer made of a metal nano wire disposed on the substrate, a second wire layer made of a first transparent conductive material, a third wire layer disposed on an upper surface of the second pad and made of a second transparent conductive material, and a fourth wire layer made of aluminum (Al) disposed on the third pad.

Abstract: A semiconductor device includes a semiconductor substrate including a well dopant layer having a first conductivity type, a gate electrode on the well dopant layer, a channel dopant layer in the well dopant layer and spaced apart from a top surface of the semiconductor substrate, a channel region between the gate electrode and the channel dopant layer, and source/drain regions in the well dopant layer at both sides of the gate electrode. The channel dopant layer and the channel region have the first conductivity type. The source/drain regions have a second conductivity type. A concentration of dopants having the first conductivity type in the channel dopant layer is higher than a concentration of dopants having the first conductivity type in the channel region. The semiconductor device may be used in a sense amplifier of a memory device.

Abstract: The purpose of the present invention is to solve the problems of conventional high frequency plasma torches and develop a plasma torch which enables quick quenching of high frequency plasma and which overcomes instability resulting from the quick quenching. To accomplish the abovementioned objective, according to one embodiment of the present invention, disclosed is an electromagnetic wave high frequency hybrid plasma torch.

Abstract: A semiconductor device includes a semiconductor substrate including a well dopant layer having a first conductivity type, a gate electrode on the well dopant layer, a channel dopant layer in the well dopant layer and spaced apart from a top surface of the semiconductor substrate, a channel region between the gate electrode and the channel dopant layer, and source/drain regions in the well dopant layer at both sides of the gate electrode. The channel dopant layer and the channel region have the first conductivity type. The source/drain regions have a second conductivity type. A concentration of dopants having the first conductivity type in the channel dopant layer is higher than a concentration of dopants having the first conductivity type in the channel region. The semiconductor device may be used in a sense amplifier of a memory device.

Abstract: Provided is a wire grid polarizer. The wire grid polarizer includes a substrate, and a plurality of conductive wire patterns which are in parallel with each other and projected from the substrate. The plurality of conductive wire patterns includes a conductive wire pattern material in which an oxide layer is defined at an outer side surface thereof, and an oxidation resistant layer on the oxide layer at the outer side surface of the conductive wire pattern material. The oxide layer is between the oxidation resistant layer and a remainder of the conductive wire pattern material.

Abstract: A method of fabricating a semiconductor device, the method including etching a portion of a substrate including a first region and a second region to form a device isolation trench; forming a device isolation layer defining active regions by sequentially stacking a first insulating layer, a second insulating layer, and a third insulating layer on an inner surface of the device isolation trench; forming word lines buried in the substrate of the first region, the word lines extending in a first direction to intersect the active region of the first region, the word lines being spaced apart from each other; forming a first mask layer covering the word lines on the substrate of the first region, the first mask layer exposing the substrate of the second region; forming a channel layer on the substrate of the second region; and forming a gate electrode on the channel layer.

Abstract: A source driver integrated circuit comprises a common node; a plurality of pads for inputting power, a portion of which are connected to an external power source and the remainder of which are connected to the portion through the common node; and a common power line which is connected to the plurality of power input pads through the common node. As a result, the resolution of adjacent channels varies very little and block dimming between channels can be resolved.

Abstract: A three-terminal nano-electro-mechanical field-effect transistor (NEMFET) includes a source electrode, a gate electrode, a drain electrode and a nanoelectromechanically suspended channel bridging the source electrode and the drain electrode. The nanoelectromechanically suspended channel includes a moveable nanowire and a dielectric coating on a surface of the nanowire facing the gate electrode. A thickness of a gap between the nanowire and the gate electrode is determined by a thickness of the dielectric coating.

Abstract: A substrate-treating apparatus includes a process chamber including a space therein, a lower electrode which is in the space of the process chamber and supports the substrate, an upper electrode which faces the lower electrode in the process chamber, a high frequency supply line which includes a feed point which applies a high frequency power to the lower electrode, and a modulator which asymmetrically supplies a dielectric substance to a lower portion of the lower electrode with reference to a center portion of the lower electrode.

Abstract: The purpose of the present invention is to solve the problems of conventional high frequency plasma torches and develop a plasma torch which enables quick quenching of high frequency plasma and which overcomes instability resulting from the quick quenching. To accomplish the abovementioned objective, according to one embodiment of the present invention, disclosed is an electromagnetic wave high frequency hybrid plasma torch.

Abstract: A sensor substrate includes a base substrate, and a sensing transistor and a switching transistor, which are on the base substrate. The sensing transistor includes a first gate electrode, an optical response pattern on the first gate electrode, a first source electrode and a first drain electrode on the optical response pattern and spaced apart from each other, a first oxide semiconductor pattern between the first source electrode and the optical response pattern, and a second oxide semiconductor pattern between the first drain electrode and the optical response pattern. The switching transistor includes a second gate electrode, a third oxide semiconductor pattern on the second gate electrode, and a second source electrode and a second drain electrode on the third oxide semiconductor pattern to be spaced apart from each other.

Abstract: Disclosed is a light emitting display device capable of minimizing a current driving capability deviation among driving switching elements. The light emitting display device includes pixels each including a first TFT for supplying data voltage to a first node in response to a scan signal, a second TFT for forming a current path between first and second nodes in response to an emission control signal, a driving TFT for forming a current path between a first driving voltage supply line and a third node in accordance with a voltage level of the second node, a third TFT for supplying a reference voltage to a fourth node in response to a sensing signal, a fourth TFT for supplying an initialization voltage to the third node in response to an initialization signal, and a fifth TFT for supplying the reference voltage to the second node in response to the initialization signal.

Abstract: The present invention relates to an output voltage stabilization circuit. Specifically, the present invention relates to an output voltage stabilization circuit of a display device driving circuit, which generates a reference current dependent on a high source voltage using a current source independent of a magnitude of the high source voltage, generates a reference current dependent on a low source voltage using a current source independent of a magnitude of the low source voltage, and then generates a control signal by comparing the magnitudes to each other, whereby the output voltage stabilization circuit may stabilize an output voltage regardless of an order in which the low source voltage and the high source voltage are turned off in a circuit using both the low source voltage and the high source voltage.

Abstract: A master mold for manufacturing an imprint mold includes a base part and a plurality of protrusions extending from the base part. At least one first recess is defined in a side portion of each of the protrusions. Additionally, an imprint mold used or utilized to manufacture a display device includes a base part and a plurality of protrusions extending from the base part. Each of the protrusions includes at least one first convex portion protruding from a side portion of each of the protrusions.

Abstract: A multi-window control method and an electronic device supporting the same is provided. The multi-window control method includes changing a size of at least one specific window among a plurality of windows, and altering a focus to the at least one specific window based on a changed size of the at least one specific window.

Abstract: The present invention provides a gamma voltage supply circuit capable of stably supplying a gamma voltage in response to the change of external voltage and a power management IC including the same. The gamma voltage supply circuit generates a regulating voltage using an internal voltage which is not influenced by the variation in load of a source driver IC, and generates a gamma voltage using the regulating voltage.