Abstract: A multilayer capacitor, includes: a body including a dielectric layer and first and second internal electrode, and a first external electrode and a second external electrode, each disposed an exterior of the body, the first external electrode being connected to the first internal electrode and the second external electrode being connected to the second internal electrode, wherein the first external electrode and the second external electrode include an electrode layer disposed on the body, and including a first intermetallic compound and glass; and a conductive resin layer disposed on the electrode layer, and including a plurality of metal particles and a resin.

Abstract: A multilayer electronic component includes a body including a dielectric layer and an internal electrode, and an external electrode disposed on the body. The external electrode includes an electrode layer connected to the internal electrode, an intermetallic compound layer disposed on the electrode layer and including a first intermetallic compound and glass, and a conductive resin layer disposed on the intermetallic compound layer and including a conductive connection portion including a second intermetallic compound and a low-melting-point metal, a plurality of metal particles, and a resin. A ratio of a length of a first direction component of a region having the first intermetallic compound, with respect to a length of a first direction component of the intermetallic compound layer, is 20% or more.

Abstract: A capacitor component includes a body including a dielectric layer and an internal electrode layer; and an external electrode disposed on one surface of the body, wherein the external electrode includes first electrode layers disposed on the one surface of the body to be spaced apart from each other, and covering a region of the one surface of the body through which the internal electrode layer is exposed; a second electrode layer including a base resin and a conductive connection portion disposed in the base resin, and disposed on the one surface of the body to cover the first electrode layers; and an intermetallic compound disposed only between each of the first electrode layers and the second electrode layer.

Abstract: A display device includes a base substrate including a display area and a non-display area around the display area are defined, a first interlayer insulating layer disposed on the base substrate, a second interlayer insulating layer disposed on the first interlayer insulating layer, a first semiconductor layer disposed on the second interlayer insulating layer and including an oxide, and a first gate insulating layer disposed on the first semiconductor layer, wherein the material of the first interlayer insulating layer and the material of the second interlayer insulating layer are different from each other. Methods of manufacturing a display device are also disclosed.

Abstract: A display device includes a buffer layer disposed on a substrate and comprising a first buffer film, and a second buffer film, wherein the first buffer film and the second buffer film are sequentially stacked in a thickness direction of the display device; a semiconductor pattern disposed on the buffer layer; a gate insulating layer disposed on the semiconductor pattern; and a gate electrode disposed on the gate insulating layer, wherein the first buffer film and the second buffer film comprise a same material, and a density of the first buffer film is greater than a density of the second buffer film.

Abstract: A display device includes a base substrate including a display area and a non-display area around the display area are defined, a first interlayer insulating layer disposed on the base substrate, a second interlayer insulating layer disposed on the first interlayer insulating layer, a first semiconductor layer disposed on the second interlayer insulating layer and including an oxide, and a first gate insulating layer disposed on the first semiconductor layer, wherein the material of the first interlayer insulating layer and the material of the second interlayer insulating layer are different from each other. Methods of manufacturing a display device are also disclosed.

Abstract: A multilayer capacitor includes a capacitor body including first to six surfaces, and including a dielectric layer, first and second internal electrodes, and first and second external electrodes. The first and second external electrodes include first and second sintered layers, and first and second plating layers, respectively. An insulating layer is disposed on the capacitor body, to cover an end portion of a first band portion of the first sintered layer and an end portion of a second band portion of the second sintered layer, and has a maximum thickness of 10 ?m or more. A portion of the first band portion of the first sintered layer is exposed from the insulating layer. A portion of the second band portion of the second sintered layer is exposed from the insulating layer.

Abstract: The present invention relates to a method for producing extracellular vesicles (EV) in large quantities by using a peptide derived from Noxa protein that plays a key role in apoptosis and derivatives thereof, and the use of the peptide for promoting extracellular vesicle production and the method for producing extracellular vesicles by using the same of the present invention can efficiently and uniformly mass-produce extracellular vesicles, and can produce extracellular vesicles which load drugs passing poorly through cellular membranes as well as recombinant proteins or plasmid DNA.

Abstract: A method of manufacturing a display device includes providing an inorganic layer on a carrier substrate, providing a first flexible substrate on the inorganic layer, providing a first shielding layer including a metal on the first flexible substrate, providing a first barrier layer on the first shielding layer, and providing a thin film transistor layer on the first barrier layer. The inorganic layer includes at least one material selected from silicon nitride (SiNx), silicon oxide (SiOx), and silicon oxynitride (SiOxNy), and a thickness of the inorganic layer is in a range from about 10 ? to about 6000 ?.

Abstract: A light unit including: a light source; and an optical member that transmits and converts light emitted from the light source, wherein the optical member includes: a light guide; a low refractive index layer that is disposed on the light guide and has a lower refractive index than that of the light guide; a first capping layer that is disposed on the low refractive index layer; and a wavelength conversion layer that is disposed on the first capping layer and includes quantum dots, and the light guide includes a transparent metal oxide.

Abstract: A method of manufacturing a display device includes providing an inorganic layer on a carrier substrate, providing a first flexible substrate on the inorganic layer, providing a first shielding layer including a metal on the first flexible substrate, providing a first barrier layer on the first shielding layer, and providing a thin film transistor layer on the first barrier layer. The inorganic layer includes at least one material selected from silicon nitride (SiNx), silicon oxide (SiOx), and silicon oxynitride (SiOxNy), and a thickness of the inorganic layer is in a range from about 10 ? to about 6000 ?.

Abstract: A multilayer electronic component includes a body including first and second surfaces opposing each other in a first direction, third and fourth surfaces connected to the first and second surfaces and opposing each other in a second direction, and fifth and sixth surfaces connected to the first to fourth surfaces and opposing each other in a third direction and including a dielectric layer and internal electrodes alternately disposed with the dielectric layer interposed therebetween in the first direction, and external electrodes disposed on the third and fourth surfaces, wherein the external electrodes include an electrode layer disposed on the body and a conductive resin layer disposed on the electrode layer, and the conductive resin layer includes a conductive metal, an epoxy resin, and an acrylic resin.

Abstract: A display device and a method of manufacturing the same are provided. The display device, comprises a first base substrate, a first barrier layer disposed on the first base substrate, a second base substrate disposed on the first barrier layer, at least one transistor disposed on the second base substrate, and an organic light emitting diode disposed on the at least one transistor, wherein the first barrier layer includes a silicon oxide, and has an adhesion force of 200 gf/inch or more to the second base substrate.

Abstract: A multilayer capacitor includes a capacitor body including first to six surfaces, and including a dielectric layer, first and second internal electrodes, and first and second external electrodes. The first and second external electrodes include first and second sintered layers, and first and second plating layers, respectively. An insulating layer is disposed on the capacitor body, to cover an end portion of a first band portion of the first sintered layer and an end portion of a second band portion of the second sintered layer, and has a maximum thickness of 10 ?m or more. A portion of the first band portion of the first sintered layer is exposed from the insulating layer. A portion of the second band portion of the second sintered layer is exposed from the insulating layer.

Abstract: An electronic component includes an internal electrode and an external electrode electrically connected thereto. The external electrode includes a conductive base having a porous structure and a resin filled in voids in the porous structure of the conductive base. The electronic component further includes a connection layer disposed between the internal electrode and the external electrode.

Abstract: Disclosed herein is a cell death-inducing peptide that rapidly acts. The peptide is derived from Noxa protein and comprises 16 amino acid residues including MTD. The peptide is designated extended MTD (eMTD) because it contains the 10-mer MTD. eMTD rapidly exhibits potent necrotic cell death in various cell lines and, as such, can be applied to the treatment of various diseases including cancer when used in conjugation with peptides or materials for targeting specific cells.

Abstract: A display device includes a substrate including pixels; a buffer layer disposed on the substrate; an etch stopper layer disposed between the substrate and the buffer layer; and at least one penetrating-hole penetrating the substrate, the buffer layer, and the etch stopper layer, wherein the etch stopper layer includes amorphous carbon.

Abstract: An electronic component includes an internal electrode and an external electrode electrically connected thereto. The external electrode includes a conductive base having a porous structure and a resin filled in voids in the porous structure of the conductive base. The electronic component further includes a connection layer disposed between the internal electrode and the external electrode.

Abstract: A display device includes a buffer layer disposed on a substrate and comprising a first buffer film, and a second buffer film, wherein the first buffer film and the second buffer film are sequentially stacked in a thickness direction of the display device; a semiconductor pattern disposed on the buffer layer; a gate insulating layer disposed on the semiconductor pattern; and a gate electrode disposed on the gate insulating layer, wherein the first buffer film and the second buffer film comprise a same material, and a density of the first buffer film is greater than a density of the second buffer film.

Abstract: A display device according to an embodiment includes: a substrate; a first compensation layer on the substrate; a buffer layer on the first compensation layer; a semiconductor layer on the buffer layer; a data wire including a source electrode and a drain electrode connected to the semiconductor layer; and a light-emitting device connected to the drain electrode, wherein the first compensation layer includes a SiNx, and a ratio of a N—H bond and a Si—H bond of the first compensation layer is 10 to 60.