Abstract: An embodiment provides a display device manufacturing method comprising the steps of: preparing a substrate having a plurality of semiconductor chips arranged thereon (S1); bonding at least one first semiconductor chip of the plurality of semiconductor chips to a transfer member (S2); irradiating laser light to the first semiconductor chip to separate the first semiconductor chip from the substrate (S3); disposing the first semiconductor chip on a panel substrate of a display device by means of the transfer member (S4); and irradiating light to the transfer member to separate the first semiconductor chip from the transfer member (S5), wherein the transfer member comprises: a transfer layer and a bonding layer disposed on one surface of the transfer layer; the bonding layer comprises at least one bonding protrusion; and the first semiconductor chip is bonded to the bonding protrusion in step S2.

Abstract: The semiconductor element according to an embodiment comprises: a light-emitting structure comprising a p-type semiconductor layer, an active layer disposed under the p-type semiconductor layer, and an n-type semiconductor layer disposed under the active layer; a protective layer disposed on the side surface and upper surface of the light-emitting structure; a p-type contact layer disposed over the p-type semiconductor layer; and an n-type contact layer disposed under the n-type semiconductor layer, wherein: the width of the lower surface of the n-type semiconductor layer is provided greater than that of the lower surface of the p-type semiconductor layer; the width of the upper surface of the n-type contact layer is provided greater than that of the upper surface of the n-type semiconductor layer; and the angle between the lower surface of the n-type semiconductor layer and the side surface of the light-emitting structure may be 30-80 degrees.

Abstract: A thin film transistor substrate according to an embodiment includes: a substrate; and a thin film transistor disposed on the substrate, wherein the thin film transistor includes a channel layer including a nitride-based semiconductor layer, a source electrode electrically connected to a first region of the channel layer, a drain electrode electrically connected to a second region of the channel layer, a gate electrode disposed on the channel layer, and a depletion forming layer disposed between the channel layer and the gate electrode.

Abstract: An embodiment relates to a light-emitting element capable of reducing the driving voltage and improving the optical output, comprising: a support substrate; a light-emitting structure which is arranged on the support substrate, and which comprises a first semiconductor layer, an active layer, and a second semiconductor layer; a plurality of connection grooves comprising bottom surfaces, which expose the second semiconductor layer through removal of the light-emitting structure, and side surfaces, which expose the first semiconductor layer, the active layer, and the second semiconductor layer; a first electrode arranged on the light-emitting structure so as to contact the first semiconductor layer, the first electrode comprising a first electrode pattern, which has ends extending to the peripheries of the connection grooves, and a second electrode pattern, which is arranged on the first electrode pattern; a contact electrode extending to the upper surface of the first semiconductor layer so as to surround the

Abstract: A semiconductor device, according to one embodiment, may comprise: a light-emitting structure comprising a first conductivity type semiconductor layer, an active layer disposed on the first conductivity type semiconductor layer, and a second conductivity type semiconductor layer disposed on the active layer; a transistor disposed on the light-emitting structure and comprising a semiconductor layer, a source electrode, a gate electrode, and a drain electrode; a second electrode disposed on the second conductivity type semiconductor layer and electrically connected to the drain electrode and the second conductivity type semiconductor layer; a first bonding pad disposed on the light-emitting structure and electrically connected to the first conductivity type semiconductor layer; a second bonding pad disposed on the transistor and electrically connected to the source electrode; and a third bonding pad disposed on the transistor and electrically connected to the gate electrode.

Abstract: The semiconductor element according to an embodiment comprises: a light-emitting structure comprising a p-type semiconductor layer, an active layer disposed under the p-type semiconductor layer, and an n-type semiconductor layer disposed under the active layer; a protective layer disposed on the side surface and upper surface of the light-emitting structure; a p-type contact layer disposed over the p-type semiconductor layer; and an n-type contact layer disposed under the n-type semiconductor layer, wherein: the width of the lower surface of the n-type semiconductor layer is provided greater than that of the lower surface of the p-type semiconductor layer; the width of the upper surface of the n-type contact layer is provided greater than that of the upper surface of the n-type semiconductor layer; and the angle between the lower surface of the n-type semiconductor layer and the side surface of the light-emitting structure may be 30-80 degrees.

Abstract: One embodiment relates to a light-emitting device, a backlight unit and a lighting device. The light-emitting device of the embodiment includes a light-emitting structure and a phosphor layer disposed on the light-emitting structure. The first and second pads are electrically connected with the light-emitting structure, wherein the phosphor layer is disposed on one side of the light-emitting device, and the first and second pads are disposed on the lower part of the light-emitting device. Thus a side view-type light-emitting device having a simplified structure can be enabled. Thus, the embodiment can enable thinning and slimming by means of the simplified structure.

Abstract: The light emitting device includes a light emitting structure including a first conductive semiconductor layer, an active layer under the first conductive semiconductor layer, and a second conductive semiconductor layer under the active layer; a plurality of first electrodes disposed under the light emitting structure and electrically connected to the first conductive semiconductor layer by passing through the second conductive semiconductor layer, the active layer and a portion of the first conductive semiconductor layer; a second electrode disposed under the light emitting structure to be electrically connected to the second conductive semiconductor layer; a first insulating layer disposed around the first electrode to insulate the first electrode from the second electrode; a bonding layer electrically connected to the second electrode by passing through the first electrode and the first insulating layer; and a second insulating layer around the bonding layer.

Abstract: A thin film transistor substrate according to an embodiment includes: a substrate; and a thin film transistor disposed on the substrate, wherein the thin film transistor includes a channel layer including a nitride-based semiconductor layer, a source electrode electrically connected to a first region of the channel layer, a drain electrode electrically connected to a second region of the channel layer, a gate electrode disposed on the channel layer, and a depletion forming layer disposed between the channel layer and the gate electrode.

Abstract: Disclosed are a light emitting device and a light emitting device package. The light emitting device includes a light emitting structure including a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, and a second conductive semiconductor layer on the active layer, an adhesive layer contacting a top surface of the first conductive semiconductor layer, a first electrode contacting a top surface of the first conductive semiconductor and a top surface of the adhesive layer, and a second electrode contacting the second conductive semiconductor layer, wherein the adhesive layer contacting the first electrode is spaced apart from the second electrode.

Abstract: A thin film transistor substrate according to an embodiment comprises: a support substrate; a bonding layer disposed on the support substrate; a thin film transistor disposed on the bonding layer, wherein the thin film transistor includes a channel layer containing a nitride-based semiconductor layer, a source electrode electrically connected to a first region of the channel layer, a drain electrode electrically connected to a second region of the channel layer, a gate electrode disposed below the channel layer, and a depletion forming layer disposed between the channel layer and the gate electrode; and a pixel electrode disposed on the thin film transistor and electrically connected to the drain electrode of the thin film transistor. The thin film transistor substrate according to the embodiment, and a display panel and a display device including the same have an advantage of implementing high resolution and reproducing a soft moving image by providing a high carrier mobility.

Abstract: Disclosed are a light emitting device and a light emitting device package. The light emitting device includes a light emitting structure including a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, and a second conductive semiconductor layer on the active layer, an adhesive layer contacting a top surface of the first conductive semiconductor layer, a first electrode contacting a top surface of the first conductive semiconductor and a top surface of the adhesive layer, and a second electrode contacting the second conductive semiconductor layer, wherein the adhesive layer contacting the first electrode is spaced apart from the second electrode.

Abstract: A light-emitting element according to an embodiment comprises: a substrate; a light-emitting structure comprising a first conductive semiconductor layer, an active layer, a second conductive semiconductor layer, which are successively arranged on the substrate; and first and second electrodes, which are electrically connected to the first and second conductive semiconductor layers, respectively, wherein the first electrode comprises at least one first contact portion arranged on the first conductive semiconductor layer, which is exposed to at least a part of a first area of the light-emitting structure, and connected to the first conductive semiconductor layer, and a plurality of second contact portions connected to the first conductive semiconductor layer that is exposed in a second area, which is positioned, on a plane, closer to the inner side than the first area of the light-emitting structure, and the second electrode comprises a third contact part, which is arranged in the second area of the light-emitt

Abstract: The light-emitting device according to one embodiment includes a substrate; a plurality of light-emitting cells disposed on the substrate so as to be spaced apart from each other; and a connection line configured to electrically interconnect neighboring light-emitting cells, wherein each of the light-emitting cells includes: a light-emitting structure including a first semiconductor layer, an active layer, and a second semiconductor layer disposed on the substrate; and first and second electrodes configured to be electrically connected to the first and second semiconductor layers respectively, wherein the light-emitting cells include: a first power cell configured to receive first power via the first electrode; and a second power cell configured to receive second power via the second electrode, and wherein the first electrode in the first power cell has a first planar shape different from a second planar shape of the second electrode in the second power cell.

Abstract: A light emitting device according to an embodiment includes a substrate; first to Mth light emitting cells (where M is a positive integer of two or more) which are arranged on the substrate so as to be spaced apart from each other; and first to (M?1)th interconnection wires which electrically connect the first to Mth light emitting cells in series, wherein an mth light emitting cell (where 1?m?M) includes a first conductive type semiconductor layer, an active layer and a second conductive type semiconductor layer, which are sequentially arranged on the substrate, and wherein an nth interconnection wire (where 1?n?M?1) interconnects the first conductive type semiconductor of the nth light emitting cell with the second conductive type semiconductor of the (n+1)th light emitting cell, and has a plurality of first branch wires which are spaced apart from each other.

Abstract: An embodiment relates to a light-emitting element capable of reducing the driving voltage and improving the optical output, comprising: a support substrate; a light-emitting structure which is arranged on the support substrate, and which comprises a first semiconductor layer, an active layer, and a second semiconductor layer; a plurality of connection grooves comprising bottom surfaces, which expose the second semiconductor layer through removal of the light-emitting structure, and side surfaces, which expose the first semiconductor layer, the active layer, and the second semiconductor layer; a first electrode arranged on the light-emitting structure so as to contact the first semiconductor layer, the first electrode comprising a first electrode pattern, which has ends extending to the peripheries of the connection grooves, and a second electrode pattern, which is arranged on the first electrode pattern; a contact electrode extending to the upper surface of the first semiconductor layer so as to surround the

Abstract: Disclosed are a light emitting device and a light emitting device package. The light emitting device includes a light emitting structure including a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, and a second conductive semiconductor layer on the active layer, an adhesive layer contacting a top surface of the first conductive semiconductor layer, a first electrode contacting a top surface of the first conductive semiconductor and a top surface of the adhesive layer, and a second electrode contacting the second conductive semiconductor layer, wherein the adhesive layer contacting the first electrode is spaced apart from, the second electrode.

Abstract: Disclosed are a light emitting device and a light emitting device package. The light emitting device includes a light emitting structure including a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, and a second conductive semiconductor layer on the active layer, an adhesive layer contacting a top surface of the first conductive semiconductor layer, a first electrode contacting a top surface of the first conductive semiconductor and a top surface of the adhesive layer, and a second electrode contacting the second conductive semiconductor layer, wherein the adhesive layer contacting the first electrode is spaced apart from the second electrode.

Abstract: A light emitting device according to an embodiment includes a substrate; first to Mth light emitting cells (where M is a positive integer of two or more) which are arranged on the substrate so as to be spaced apart from each other; and first to (M?1)th interconnection wires which electrically connect the first to Mth light emitting cells in series, wherein an mth light emitting cell (where 1?m?M) includes a first conductive type semiconductor layer, an active layer and a second conductive type semiconductor layer, which are sequentially arranged on the substrate, and wherein an nth interconnection wire (where 1?n?M?1) interconnects the first conductive type semiconductor of the nth light emitting cell with the second conductive type semiconductor of the (n+1)th light emitting cell, and has a plurality of first branch wires which are spaced apart from each other.

Abstract: Disclosed is a light emitting device including a light emitting structure including a first conductive semiconductor layer, an active layer under the first conductive semiconductor layer, and a second conductive semiconductor layer under the active layer, a first electrode electrically connected with the first conductive semiconductor layer, a mirror layer under the light emitting structure, a window semiconductor layer between the mirror layer and the light emitting structure, a reflective layer under the mirror layer, a conductive contact layer between the reflective layer and the window semiconductor layer and in contact with the second conductive semiconductor layer, and a conductive support substrate under the reflective layer. The window semiconductor layer includes a C-doped P-based semiconductor doped with a higher dopant concentration. The conductive contact layer includes material different from that of the mirror layer with a thickness thinner than that of the window semiconductor layer.