Abstract: Disclosed are a light emitting device and a light emitting device package. The light emitting device includes a first electrode, a light emitting structure including a first semiconductor layer, an active layer, and a second semiconductor layer on the first electrode, a nano-tube layer including a plurality of carbon nano tubes on the light emitting structure, and a second electrode on the light emitting structure.

Abstract: Disclosed is a method of manufacturing a light emitting device. The light emitting device includes a nitride semiconductor layer, an electrode on the nitride semiconductor layer, a light emitting structure including a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer under the nitride semiconductor layer, and a conductive layer under the light emitting structure. The nitride semiconductor layer has band gap energy lower than band gap energy of the first conductive type semiconductor layer.

Abstract: A light emitting device includes a light emitting structure including a second conduction type semiconductor layer, an active layer, and a first conduction type semiconductor layer, a second electrode layer arranged under the light emitting structure, a first electrode layer having at least portion extending to contact the first conduction type semiconductor layer passing the second conduction type semiconductor layer and the active layer, and an insulating layer arranged between the second electrode layer and the first electrode layer, between the second conduction type semiconductor layer and the first electrode layer, and between the active layer and the first electrode layer, wherein said at least one portion of the first electrode layer contacting the first conduction type semiconductor layer has a roughness.

Abstract: A light emitting device according to the embodiment includes a substrate; a protective layer on the substrate; a electrode layer on the protective layer; a light emitting structure disposed on the electrode layer to generate light and provided with a first semiconductor layer, an active layer under the first semiconductor layer, and a second conductive semiconductor layer under the active layer; and a first electrode having a first end disposed on a top surface of the light emitting structure and a second end disposed on the protective layer. The protective layer comes into Schottky contact with at least one of the electrode layer and the first electrode.

Abstract: Disclosed are a light emitting device, a method of manufacturing the same, a light emitting device package, and an illumination system. The light emitting device includes a transmissive substrate, an ohmic layer on the transmissive substrate, a light emitting structure on the ohmic layer and including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer between the first and second semiconductor layers, a electrode layer on a bottom surface of the transmissive substrate, and a conductive via electrically connecting the light emitting structure with the electrode layer through the transmissive substrate wherein an area of the transmissive substrate is increased toward an upper portion thereof from a lower portion.

Abstract: Disclosed are a light emitting device and a light emitting device package having the same. The light emitting device includes a light emitting structure including a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer, wherein the first conductive type semiconductor layer includes a stepped structure having a second top surface stepped lower than the first top surface thereof; an insulating layer disposed on a lateral surface of the light emitting structure and the second top surface of the first conductive type semiconductor layer; an electrode electrically connected with the first conductive type semiconductor layer; an electrode layer under the second conductive type semiconductor layer; and a protective layer disposed on a periphery portion of a lower surface of the second conductive type semiconductor layer.

Abstract: Disclosed are a light emitting device and a light emitting device package having the same. The light emitting device includes a light emitting structure including a first conductive semiconductor layer, an active layer under the first conductive semiconductor layer, and a second conductive semiconductor layer under the active layer; a first electrode layer under the second conductive semiconductor layer; an electrode including a top surface making contact with a part of a bottom surface of the first conductive semiconductor layer; and an insulating member for covering an outer peripheral surface of the electrode, wherein a part of the insulating member extends into a region between the second conductive semiconductor layer and the first electrode layer from a bottom surface of the electrode.

Abstract: Disclosed are a light emitting device and a light emitting device package. The light emitting device includes a light emitting structure including a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer, an electrode on the first conductive type semiconductor layer, a reflective layer under the second conductive type semiconductor layer, a protective layer at outer peripheral portions of a lower surface of the second conductive type semiconductor layer, and a light extraction structure including a compound semiconductor on the protective layer.

Abstract: Disclosed are a light emitting device and a light emitting device package having the same.

Abstract: A method of making a light emitting device includes forming an active layer between first and semiconductor layers of different conductivity types, and forming a transparent conductive layer adjacent the second semiconductor layer. The transparent conductive layer includes a first transparent conductive region contacting a first region of the second semiconductor layer and a second transparent conductive region contacting a second region of the second semiconductor layer. An electrode is formed adjacent the first semiconductor layer in vertical alignment with the second region.

Abstract: A semiconductor light-emitting device is provided. The semiconductor light-emitting device may include a light-emitting structure, an electrode, a reflective layer, a conductive support member, and a channel layer. The light-emitting structure may include a plurality of compound semiconductor layers. The electrode may be disposed on the compound semiconductor layer. The reflective layer may be disposed under the compound semiconductor layer. The conductive support member may be disposed under the reflective layer. The channel layer may be disposed along a bottom edge of the compound semiconductor layer.

Abstract: Disclosed are a light emitting device and a light emitting device package having the same. The light emitting device includes a plurality of light emitting cells including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer; a first electrode layer connected to the first conductive semiconductor layer of a first light emitting cell of the plural light emitting cells; a plurality of second electrode layers under the light emitting cells, a portion of the second electrode layers being connected to the first conductive semiconductor layer of an adjacent light emitting cells; a third electrode layer disposed under a last light emitting cell of the plural light emitting cells; a first electrode connected to the first electrode layer; a second electrode connected to the third electrode layer; an insulating layer around the first to third electrode layers; and a support member under the insulating layer.