Abstract: A thin film transistor for an organic light emitting diode includes a substrate including a pixel portion and an interconnection portion, a buffer layer on the substrate, a gate electrode and a gate interconnection on the buffer layer, wherein the gate electrode is located at the pixel portion and the gate interconnection is located at the interconnection portion, a gate insulating layer on the substrate, a semiconductor layer on the gate electrode, source and drain electrodes electrically connected to the semiconductor layer, and a metal pattern on the gate interconnection.

Abstract: A thin film transistor includes a substrate, a buffer layer on the substrate, a semiconductor layer on the buffer layer, source and drain electrodes directly on the semiconductor layer, each of the source and drain electrodes including at least one hole therethrough, a gate insulating layer on the substrate, and a gate electrode on the gate insulating layer and corresponding to the semiconductor layer.

Abstract: A method of fabricating a thin film transistor includes patterning the amorphous semiconductor layer to form an amorphous semiconductor layer pattern, forming a gate electrode corresponding to the amorphous semiconductor layer pattern on a gate insulating layer, forming an interlayer insulating layer on the entire surface of the substrate, forming a first contact hole partially exposing the amorphous semiconductor layer pattern, forming a second contact hole partially exposing the gate electrode, and forming a metal layer on the entire surface of the substrate. The method also includes applying an electrical field to the metal layer such that a semiconductor layer is formed by crystallization of the amorphous semiconductor layer pattern, and patterning the metal layer to form source and drain electrodes that are insulated from the gate electrode and that are electrically connected with the semiconductor layer through the first contact hole.

Abstract: A liquid crystal display device may include a first substrate having a display area and a non-display area, a first electrode located on the first substrate at the display area, a second substrate opposed to the first substrate, a second electrode located on the second substrate at the display area, a liquid crystal layer located between the first electrode and the second electrode, a spacer located between the first substrate and the second substrate in the non-display area, a sealant located adjacent to the spacer, and a blocking structure located beneath the spacer.

Abstract: A modular operator, a smart card including the same, and a method of operating the same are provided. The modular operator includes: an input unit configured to receive first data, second data, and a modulus; and an accumulator configured to perform an accumulation operation on the first data and a first portion of the second data, to shift the accumulation operation result to the right as much as the number of bits of the first portion, and to perform an accumulation operation on a result of a shifted accumulation operation, a second part, of the second data, which is shifted to the right as much as the number of bits of the first portion, and the modulus.

Abstract: A thin film transistor, a method of fabricating the thin film transistor, and an organic light emitting diode (OLED) display device including the thin film transistor, the thin film transistor including: a substrate; a buffer layer formed on the substrate; a first semiconductor layer disposed on the buffer layer; a second semiconductor layer disposed on the first semiconductor layer, which is larger than the first semiconductor layer; a gate electrode insulated from the first semiconductor layer and the second semiconductor layer; a gate insulating layer to insulate the gate electrode from the first semiconductor layer and the second semiconductor layer; source and drain electrodes insulated from the gate electrode and connected to the second semiconductor layer; an insulating layer disposed on the source and drain electrodes, and an organic light emitting diode connected to one of the source and drain electrodes.

Abstract: A silicate phosphor composition is provided having a ?-phase of an orthorhombic crystal structure whose space group is Pbnm 62, and whose composition is represented by the following chemical formula: Ca2-x-y-zMxSiO4:yCe3+,zN(0?x<0.5,0<y?0.1,0?z<0.15) In the formula, M represents at least one member selected from the group consisting of Mg, Sr, Ba, Zn, Na, Al, Ga, Ge, P, As and Fe, and N represents at least one member selected from the group consisting of Eu2+, Mn2+, Tb3+, Yb2+ and Tm3+. The silicate phosphor has a maximum absorbance for a wavelength of about 450 nm to about 475 nm corresponding to a main part of a blue excitation light, and has a great stability at a high temperature. As such the silicate phosphor may be used in combination with a blue light source to produce a white light.

Abstract: The present invention comprises a high performance, horizontal, zero-net mass-flux, synthetic jet actuator for active control of viscous, separated flow on subsonic and supersonic vehicles. The present invention is a horizontal piezoelectric hybrid zero-net mass-flux actuator, in which all the walls of the chamber are electrically controlled synergistically to reduce or enlarge the volume of the synthetic jet actuator chamber in three dimensions simultaneously and to reduce or enlarge the diameter of orifice of the synthetic jet actuator simultaneously with the reduction or enlargement of the volume of the chamber. The present invention is capable of installation in the wing surface as well as embedding in the wetted surfaces of a supersonic inlet. The jet velocity and mass flow rate for the SJA-H will be several times higher than conventional piezoelectric actuators.

Abstract: A Montgomery inverse calculation device includes a plurality of registers each storing a value of a variable, a modulus register storing a modulus, a multiplier performing multiplication on the modulus. A comparator compares the value of the variable stored in each of the registers with an output value of the multiplier and generates a plurality of control signals. A plurality of shifters shifts bits of a value of a variable stored in a corresponding register among the registers in response to at least one first control signal, and a quotient generation block calculates a quotient of mod 2m with respect to values output from some of the shifters in response to a second control signal. A calculation block calculates an updated value of an output value of each of the shifters using the quotient in response to at least one third control signal.

Abstract: A thin film transistor for an organic light emitting diode includes a substrate including a pixel portion and an interconnection portion, a buffer layer on the substrate, a gate electrode and a gate interconnection on the buffer layer, wherein the gate electrode is located at the pixel portion and the gate interconnection is located at the interconnection portion, a gate insulating layer on the substrate, a semiconductor layer on the gate electrode, source and drain electrodes electrically connected to the semiconductor layer, and a metal pattern on the gate interconnection.

Abstract: Disclosed is a kit for amplifying detected signal in immunosensor and a method for detecting target antigen using the same according to the present invention, whereby a target antigen can be effectively detected even by a small amount of target antibody to thereby reduce nonspecific detection signal and to detect an amplified signal.

Abstract: A thin film transistor (TFT), including a crystalline semiconductor pattern on a substrate, a gate insulating layer on the crystalline semiconductor pattern, the gate insulating layer having two first source/drain contact holes and a semiconductor pattern access hole therein, a gate electrode on the gate insulating layer, the gate electrode being between the two first source/drain contact holes, an interlayer insulating layer covering the gate electrode, the interlayer insulating layer having two second source/drain contact holes therein, and source and drain electrodes on the interlayer insulating layer, each of the source and drain electrodes being insulated from the gate electrode, and having a portion connected to the crystalline semiconductor pattern through the first and second source/drain contact holes.

Abstract: The present invention provides an ink composition for roll printing, which comprises one or more first fluorine surfactants that comprise a hydrophilic component, a lipophilic component, and a fluorine component; and one or more second fluorine surfactants that comprise a fluorine component, and any one of a hydrophilic component and a lipophilic component.

Abstract: A system is provided for reducing aeroacoustic noise generated by an aircraft having wings equipped with trailing-edge flaps. The system includes a plurality of elastically deformable structures. Each structure is coupled to and along one of the side edges of one of the trailing-edge flaps, and is coupled to a portion of one of the wings that is adjacent to the one of the side edges. The structures elastically deform when the trailing-edge flaps are deployed away from the wings.

Abstract: A portable device and a method for providing a User Interface (UI) mode are provided. The portable device includes a display unit, a sensor unit for sensing a user's motion, and a control unit for controlling, if the user's motion is sensed by the sensor unit, the display unit to release a standby mode of the portable device and to output a UI mode screen corresponding to a type of the motion.

Abstract: The present invention relates generally to a thin film transistor, an organic light emitting diode (OLED) display including the same, and manufacturing methods of them. The thin film transistor comprises: a substrate; a gate electrode disposed on the substrate; a gate insulating layer disposed on the gate electrode; a semiconductor layer disposed on the gate insulating layer; an inter layer dielectric disposed on the entire surface of the substrate; and source and drain electrodes disposed on the inter layer dielectric and connected to the semiconductor layer, and in which the gate electrode is disposed so as to correspond to the entire surface of the semiconductor layer, and a manufacturing method thereof.

Abstract: A modular calculator and a method of performing a modular calculation are provided. The modular calculator includes a first register to receive and to store a first integer, a second register to receive and to store a second integer, a calculator connected to an output terminal of the first register and an output terminal of the second register, and a controller to determine an arithmetic operation of the calculator by referring to a sign of the first integer and a sign of the second integer and to control the calculator to perform the determined arithmetic operation on one of an addition and a subtraction of the first integer and the second integer and a modulus value.

Abstract: A thin film transistor (TFT), including a crystalline semiconductor pattern on a substrate, a gate insulating layer on the crystalline semiconductor pattern, the gate insulating layer having two first source/drain contact holes and a semiconductor pattern access hole therein, a gate electrode on the gate insulating layer, the gate electrode being between the two first source/drain contact holes, an interlayer insulating layer covering the gate electrode, the interlayer insulating layer having two second source/drain contact holes therein, and source and drain electrodes on the interlayer insulating layer, each of the source and drain electrodes being insulated from the gate electrode, and having a portion connected to the crystalline semiconductor pattern through the first and second source/drain contact holes.