Abstract: A method of forming a polycrystalline silicon layer includes forming an amorphous silicon layer on a substrate by chemical vapor deposition using a gas including a silicon atom and hydrogen gas, and crystallizing the amorphous silicon layer into a polycrystalline silicon layer using a crystallization-inducing metal. The resultant polycrystalline silicon layer has an improved charge mobility.

Abstract: A method of forming a polycrystalline silicon layer and an atomic layer deposition apparatus used for the same. The method includes forming an amorphous silicon layer on a substrate, exposing the substrate having the amorphous silicon layer to a hydrophilic or hydrophobic gas atmosphere, placing a mask having at least one open and at least one closed portion over the amorphous silicon layer, irradiating UV light toward the amorphous silicon layer and the mask using a UV lamp, depositing a crystallization-inducing metal on the amorphous silicon layer, and annealing the substrate to crystallize the amorphous silicon layer into a polycrystalline silicon layer. This method and apparatus provide for controlling the seed position and grain size in the formation of a polycrystalline silicon layer.

Abstract: A thin film transistor (TFT) and an organic light emitting diode (OLED) display device. The TFT and the OLED display device include a substrate, a buffer layer disposed on the substrate, a semiconductor layer disposed on the buffer layer, a gate electrode insulated from the semiconductor layer, a gate insulating layer insulating the semiconductor layer from the gate electrode, and source and drain electrodes insulated from the gate electrode and partially connected to the semiconductor layer, wherein the semiconductor layer is formed from a polycrystalline silicon layer crystallized by a metal catalyst and the metal catalyst is removed by gettering using an etchant. In addition, the OLED display device includes an insulating layer disposed on the entire surface of the substrate, a first electrode disposed on the insulating layer and electrically connected to one of the source and drain electrodes, an organic layer, and a second electrode.

Abstract: A thin film transistor includes a substrate; a semiconductor layer disposed on the substrate, and including polycrystalline silicon having a constant directivity and a uniformly distributed crystal grain boundary; a gate insulating layer; a gate electrode; an interlayer insulating layer; and source and drain electrodes.

Abstract: A heat-curable ink composition and a color filter produced using the ink composition are provided. The ink composition and the color filter are highly resistant to heat and chemicals due to the use of a polyester resin prepared by polycondensation. In addition, unreacted anhydride groups are removed using a monohydric alcohol in the preparation of the ink composition to make the ink composition and the color filter very stable during storage.

Abstract: A thin film transistor, a method of fabricating the thin film transistor, and an organic light emitting diode (OLED) display device including the thin film transistor, the thin film transistor including: a substrate; a buffer layer formed on the substrate; a first semiconductor layer disposed on the buffer layer; a second semiconductor layer disposed on the first semiconductor layer, which is larger than the first semiconductor layer; a gate electrode insulated from the first semiconductor layer and the second semiconductor layer; a gate insulating layer to insulate the gate electrode from the first semiconductor layer and the second semiconductor layer; source and drain electrodes insulated from the gate electrode and connected to the second semiconductor layer; an insulating layer disposed on the source and drain electrodes, and an organic light emitting diode connected to one of the source and drain electrodes.

Abstract: A terminal device and a data transceiving method are provided. The terminal device includes a sensing unit which senses a momentum of the terminal device, an interface unit which receives a momentum from at least one external device, and a control unit which performs one of a data receiving operation, a data transmitting operation, and a data transceiving operation with the at least one external device depending on a comparison value obtained from a comparison of the sensed momentum with the received momentum to allow two devices to exchange data more easily.

Abstract: A method for forming fine patterns includes (S1) closely contacting a cliche-forming film to a hard mold concavely patterned, thereby making a disposable cliche; (S2) coating an elastic blanket cylinder with ink or resin; (S3) compressing the elastic blanket cylinder to the disposable cliche to remove ink or resin on a surface of the elastic blanket cylinder at a portion contacting with a relatively protruded embossed portion of the disposable cliche; and (S4) transcribing ink or resin remaining on the surface of the elastic blanket cylinder to a substrate. This method allows simple and fast works and greatly reduces costs by adopting a disposable cliche that may be easily installed and removed. Also, this method may be effectively utilized to form a fine pattern of an electronic device or a display device such as color filter and electrode.

Abstract: The present invention provides an ink composition for roll printing, which comprises one or more first fluorine surfactants that comprise a hydrophilic component, a lipophilic component, and a fluorine component; and one or more second fluorine surfactants that comprise a fluorine component, and any one of a hydrophilic component and a lipophilic component.

Abstract: The present invention relates to a method for etching glass or metal using a negative photoresist and a method for fabricating a cliche using the same. In the method for etching glass or metal according to the present invention, since adhesion strength between the negative photoresist and the metal or the metal oxide is excellent, the photoresist layer is not corroded by the metal or metal oxide etching solution, it is unnecessary to produce an inverse photomask, the fabrication process is simple, and a low resolution light source such as mixed wavelength type light source is capable of being used, thus, economic efficiency is ensured.

Abstract: A thin film transistor for an organic light emitting diode includes a substrate including a pixel portion and an interconnection portion, a buffer layer on the substrate, a gate electrode and a gate interconnection on the buffer layer, wherein the gate electrode is located at the pixel portion and the gate interconnection is located at the interconnection portion, a gate insulating layer on the substrate, a semiconductor layer on the gate electrode, source and drain electrodes electrically connected to the semiconductor layer, and a metal pattern on the gate interconnection.

Abstract: A novel full piezoelectric multilayer stacked hybrid actuation/transduction system. The system demonstrates significantly-enhanced electromechanical performance by utilizing the cooperative contributions of the electromechanical responses of multilayer stacked negative and positive strain components. Both experimental and theoretical studies indicate that for this system, the displacement is over three times that of a same-sized conventional flextensional actuator/transducer. The system consists of at least 2 layers which include electromechanically active components. The layers are arranged such that when electric power is applied, one layer contracts in a transverse direction while the second layer expands in a transverse direction which is perpendicular to the transverse direction of the first layer. An alternate embodiment includes a third layer.

Abstract: The present invention comprises a high performance, vertical, zero-net mass-flux, synthetic jet actuator for active control of viscous, separated flow on subsonic and supersonic vehicles. The present invention is a vertical piezoelectric hybrid zero-net mass-flux actuator, in which all the walls of the chamber are electrically controlled synergistically to reduce or enlarge the volume of the synthetic jet actuator chamber in three dimensions simultaneously and to reduce or enlarge the diameter of orifice of the synthetic jet actuator simultaneously with the reduction or enlargement of the volume of the chamber. The jet velocity and mass flow rate for the present invention will be several times higher than conventional piezoelectric synthetic jet actuators.

Abstract: The present invention comprises a high performance, horizontal, zero-net mass-flux, synthetic jet actuator for active control of viscous, separated flow on subsonic and supersonic vehicles. The present invention is a horizontal piezoelectric hybrid zero-net mass-flux actuator, in which all the walls of the chamber are electrically controlled synergistically to reduce or enlarge the volume of the synthetic jet actuator chamber in three dimensions simultaneously and to reduce or enlarge the diameter of orifice of the synthetic jet actuator simultaneously with the reduction or enlargement of the volume of the chamber. The present invention is capable of installation in the wing surface as well as embedding in the wetted surfaces of a supersonic inlet. The jet velocity and mass flow rate for the SJA-H will be several times higher than conventional piezoelectric actuators.

Abstract: The advanced modified high performance synthetic jet actuator with optimized curvature shape chamber (ASJA-M) is a synthetic jet actuator (SJA) with a lower volume reservoir or chamber. A curved chamber is used, instead of the conventional cylinder chamber, to reduce the dead volume of the jet chamber and increase the efficiency of the synthetic jet actuator. The shape of the curvature corresponds to the maximum displacement (deformation) profile of the electroactive diaphragm. The jet velocity and mass flow rate for the ASJA-M will be several times higher than conventional piezoelectric actuators.

Abstract: A prism sheet capable of enhancing light efficiency and viewing angle characteristics, a backlight unit using the prism sheet, and a method for fabricating the prism sheet are disclosed. The prism sheet includes a transparent substrate, a plurality of grooves formed in an upper surface of the transparent substrate to extend in a parallel direction with each other and to be uniformly spaced apart from one another by a predetermined distance, a plurality of reflection patterns respectively formed in the grooves, and a plurality of lenticular lenses formed on the upper surface of the transparent substrate formed with the reflection patterns.

Abstract: The thin film transistor for an organic light emitting diode includes a crystalline semiconductor pattern on a substrate, a gate insulating layer on the crystalline semiconductor pattern having first source and drain contact holes, a gate electrode on the gate insulating layer, the gate electrode being between the first source and drain contact holes, an interlayer insulating layer covering the gate electrode, having second source and drain contact holes, source and drain electrode in the second source and drain contact holes, insulated from the gate electrode and electrically connected to the crystalline semiconductor pattern by first and second metal patterns in the first source and drain contact holes, respectively, wherein the gate electrode, the first metal pattern in the first source contact hole and the second metal pattern in the first drain contact hole are each made of a same material.

Abstract: A thin film transistor includes a substrate, a buffer layer on the substrate, a semiconductor layer on the buffer layer, a gate insulating layer on the semiconductor layer, a gate electrode on the gate insulating layer, an interlayer insulating layer on the entire surface of the substrate having the gate electrode, a first contact hole and a second contact hole, and source and drain electrodes on the interlayer insulating layer, insulated from the gate electrode, and having a portion connected with the semiconductor layer through the first contact hole. An organic light emitting diode display may include the thin film transistor along with a passivation layer on the entire surface of the substrate, and a first electrode, an organic layer, and a second electrode, which are on the passivation layer and electrically connected with the source and drain electrodes.

Abstract: A thin film transistor (TFT), including a crystalline semiconductor pattern on a substrate, a gate insulating layer on the crystalline semiconductor pattern, the gate insulating layer having two first source/drain contact holes and a semiconductor pattern access hole therein, a gate electrode on the gate insulating layer, the gate electrode being between the two first source/drain contact holes, an interlayer insulating layer covering the gate electrode, the interlayer insulating layer having two second source/drain contact holes therein, and source and drain electrodes on the interlayer insulating layer, each of the source and drain electrodes being insulated from the gate electrode, and having a portion connected to the crystalline semiconductor pattern through the first and second source/drain contact holes.

Abstract: Systems and methods of controlled value reference signals of resistance based memory circuits are disclosed. In a particular embodiment, a circuit device is disclosed that includes a first input configured to receive a reference control signal. The circuit device also includes an output responsive to the first input to selectively provide a controlled value reference voltage to a sense amplifier coupled to a resistance based memory cell.