Abstract: The present invention is directed to photovoltaic devices comprising nanostructured materials, wherein such photovoltaic devices are comprised exclusively of inorganic components. Depending on the embodiment, such nanostructured materials are either 1-dimensional nanostructures or branched nanostructures, wherein such nanostructures are used to enhance the efficiency of the photovoltaic device, particularly for solar cell applications. Additionally, the present invention is also directed at methods of making and using such devices.

Abstract: The present invention is directed toward field effect transistors (FETs) and thin film transistors (TFTs) comprising carbon nanotubes (CNTs) and to methods of making such devices using solution-based processing techniques, wherein the CNTs within such devices have been fractionated so as to be concentrated in semiconducting CNTs. Additionally, the relatively low-temperature solution-based processing achievable with the methods of the present invention permit the use of plastics in the fabricated devices.

Abstract: Organic light emitting devices are disclosed that use a micro electromechanical system (MEMS) structure to enable a pixel and pixel array wherein each pixel contains a MEMS and an OLED element. A MEMS structure is used for switching the OLED element. These OLED/MEMS pixels can be fabricated on flex circuit, silicon, as well as other inorganic materials. They can be fabricated in a large array for developing a 2-dimensional display application and each pixel can be addressed through conventional matrix scanning addressing scheme. The ability of fabricating these OLED/MEMS pixels on flexible organic substrates as well as other rigid substrates enables wider selection of substrate materials for use with different applications.

Abstract: In a method of making an elongated carbide nanostructure, a plurality of spatially-separated catalyst particles is applied to a substrate. The spatially-separated catalyst particles and at least a portion of the substrate are exposed to a metal-containing vapor at a preselected temperature and for a period sufficient to cause an inorganic nano-structure to form between the substrate and at least one of the catalyst particles. The inorganic nano-structure is exposed to a carbon-containing vapor source at a preselected temperature and for a period sufficient to carburize the inorganic nano-structure.

Abstract: The present invention provides a method and associated structure for forming an electrostatically-doped carbon nanotube device. The method includes providing a carbon nanotube having a first end and a second end. The method also includes disposing a first metal contact directly adjacent to the first end of the carbon nanotube, wherein the first metal contact is electrically coupled to the first end of the carbon nanotube, and disposing a second metal contact directly adjacent to the second end of the carbon nanotube, wherein the second metal contact is electrically coupled to the second end of the carbon nanotube.

Abstract: Storage capacitor design for a solid state imager. The imager includes several pixels disposed on a substrate in an imaging array pattern. Each pixel includes a photosensor coupled to a thin film switching transistor. Several scan lines are disposed at a first level with respect to the substrate along a first axis and several data lines are disposed at a second level along a second axis of the imaging array. Several data lines disposed at a second level with respect to the substrate along a second axis of the imaging array pattern. Each pixel comprises a storage capacitor coupled parallel to the photosensor, the storage capacitor comprising a storage capacitor electrode and a capacitor common electrode.

Abstract: Storage capacitor array for a solid state radiation imager. The imager includes several pixels disposed on a substrate in an imaging array pattern. Each pixel includes a photosensor coupled to a thin film switching transistor. Several scan lines are disposed at a first level with respect to the substrate along a first axis and several data lines are disposed at a second level along a second axis of the imaging array. Capacitors are disposed on the substrate, wherein each capacitor has a first electrode coupled to a corresponding photosensor and a corresponding thin film transistor and a second electrode coupled to a capacitor linear electrode.

Abstract: A method for fabricating a radiation detector including at least one Thin Film Transistor (TFT) includes forming a low resistance data line strap unitary with a light block element on the TFT.

Abstract: A radiation detector includes a top-gate thin film transistor (TFT) including a source electrode, a drain electrode, and a gate electrode, and a diode electrically coupled to the source electrode.

Abstract: A radiation detector includes a top gate thin film transistor (TFT) including a source electrode, a drain electrode, a gate electrode, a first dielectric layer, and a second dielectric layer, wherein the second dielectric layer is extending over a surface of the first dielectric layer. The radiation detector also includes a capacitor that includes at least two electrodes and a dielectric layer. The capacitor dielectric layer is formed unitarily with the TFT second dielectric layer.

Abstract: An improved structure and method are provided to decouple the gate dielectric thickness and the emitter tip to gate layer distance by etching the dielectric using ion bombardment. The ion bombardment, or ion etch, is performed prior to depositing the gate layer. The improved structure and method will allow a smaller distance between the emitter tip and the gate structure without having to decrease the thickness of the gate insulator layer. The smaller emitter tip to gate distance lowers the turn-on voltage which is highly desirable in such areas as beam optics and power dissipation.

Abstract: Organic light emitting devices are disclosed that use a micro electromechanical system (MEMS) structure to enable a pixel and pixel array wherein each pixel contains a MEMS and an OLED element. A MEMS structure is used for switching the OLED element. These OLED/MEMS pixels can be fabricated on flex circuit, silicon, as well as other inorganic materials. They can be fabricated in a large array for developing a 2-dimensional display application and each pixel can be addressed through conventional matrix scanning addressing scheme. The ability of fabricating these OLED/MEMS pixels on flexible organic substrates as well as other rigid substrates enables wider selection of substrate materials for use with different applications.

Abstract: Organic light emitting devices are disclosed that use a micro electromechanical system (MEMS) structure to enable a pixel and pixel array wherein each pixel contains a MEMS and an OLED element. A MEMS structure is used for switching the OLED element. These OLED/MEMS pixels can be fabricated on flex circuit, silicon, as well as other inorganic materials. They can be fabricated in a large array for developing a 2-dimensional display application and each pixel can be addressed through conventional matrix scanning addressing scheme. The ability of fabricating these OLED/MEMS pixels on flexible organic substrates as well as other rigid substrates enables wider selection of substrate materials for use with different applications.

Abstract: A method for fabricating a radiation detector including at least one Thin Film Transistor (TFT) includes forming a low resistance data line strap unitary with a light block element on the TFT.

Abstract: A radiation detector includes a top-gate thin film transistor (TFT) including a source electrode, a drain electrode, and a gate electrode, and a diode electrically coupled to the source electrode.

Abstract: A radiation detector includes a top gate thin film transistor (TFT) including a source electrode, a drain electrode, a gate electrode, a first dielectric layer, and a second dielectric layer, wherein the second dielectric layer is extending over a surface of the first dielectric layer. The radiation detector also includes a capacitor that includes at least two electrodes and a dielectric layer. The capacitor dielectric layer is formed unitarily with the TFT second dielectric layer.

Abstract: A radiation detector includes a top gate thin film transistor (TFT) including a source electrode, a drain electrode, a gate electrode, a TFT dielectric layer, a TFT semiconductive layer, and a TFT intrinsic amorphous silicon (a-Si) layer. The radiation detector also includes a capacitor including a first electrode, a second electrode substantially coplanar with the gate electrode, and a capacitor dielectric, the capacitor dielectric including a capacitor dielectric layer substantially coplanar with the TFT dielectric layer, a capacitor semiconductive layer substantially coplanar with the TFT semiconductive layer, and a capacitor a-Si layer substantially coplanar with the TFT a-Si layer.

Abstract: An extraction grid for field emitter tip structures and method of forming are described. A conductive layer is deposited over an insulative layer formed over the field emitter tip structures. The conductive layer is milled using ion milling. Owing to topographical differences along an exposed surface of the conductive layer, ions strike the exposed surface at various angles of incidence. As etch rate from ion milling is dependent at least in part upon angle of incidence, a selectivity based on varying topography of the exposed surface (“topographic selectivity”) results in non-uniform removal of material thereof. In particular, portions of the conductive layer in near proximity to the field emitter tip structures are removed faster than portions of the conductive layer between emitter tip structures. Thus, portions of the insulative layer in near proximity to the field emitter tip structures may be exposed while leaving intervening portions of the conductive layer for forming the extraction grid.

Abstract: A field emission display backplate including a substrate having a surface; an emitter which extends from the surface of the substrate; and an anode having an upper surface, a lower surface, and an opening surface which defines an opening aligned with the emitter, the opening surface includes a first portion which curves outward relative to the anode and a second portion which curves inward relative to the anode.

Abstract: The present invention includes field emission display backplates and methods of forming field emission display backplates. According to one aspect, the present invention provides a field emission display backplate including a substrate having a surface; an emitter which extends from the surface of the substrate; and an anode having an upper surface, a lower surface, and an opening surface which defines an opening aligned with the emitter, the opening surface includes a first portion which curves outward relative to the anode and a second portion which curves inward relative to the anode.