Patents by Inventor Ji WEI

Ji WEI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20080122028
    Abstract: An inductor formed on a semiconductor substrate is provided in the present invention. The inductor comprises a metal layer and an insulator layer. The metal layer constitutes the coil of the inductor. The insulator layer comprises at least one insulator slot, and each insulator slot is encompassed in the metal layer.
    Type: Application
    Filed: August 31, 2006
    Publication date: May 29, 2008
    Applicant: UNITED MICROELECTRONICS CORP.
    Inventors: Tsun-Lai Hsu, Jun-Hong Ou, Jui-Fang Chen, Ji-Wei Hsu
  • Publication number: 20070279860
    Abstract: A mounting apparatus for mounting a data storage device that defines a locking hole in a sidewall thereof, includes a bracket for holding the data storage device, a first locking member, and a second locking member. The bracket includes a side wall. The side wall defines a through-hole therein. The first locking member is pivotably mounted to the side wall of the bracket. A locking portion protrudes from the first locking member for being inserted through the through-hole of the bracket to engage in the locking hole of the data storage device. The second locking member is pivotably mounted to the side wall of the bracket, and releasably mounted to the first locking member.
    Type: Application
    Filed: November 25, 2006
    Publication date: December 6, 2007
    Applicant: HON HAI PRECISION INDUSTRY CO., LTD.
    Inventors: JI-WEI ZHENG, WEI ZHANG, QIN GUO, GUANG-YAO LEE, CHUN-CHI LIANG
  • Patent number: 7278155
    Abstract: The present invention discloses a single sign-on system for remotely operating an application program via a network. With the present invention, a user may operate a client computer, which connects and signs on to a single sign-on server to retrieve sign-on information. Then, the client computer connects and signs on to an application program server with the sign-on information, and updates the sign-on information saved in the single sign-on server by sending the sign-on information back to the single sign-on server.
    Type: Grant
    Filed: February 5, 2002
    Date of Patent: October 2, 2007
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Ching-Chuan Hsieh, Ji-Wei Lin, Chia San Lee, Yueh-Ching Lee
  • Publication number: 20070006248
    Abstract: A disk drive for reading a disk is provided. The disk drive includes an optical pickup unit and a spindle motor. The optical pickup unit is disposed below the disk to read data of the disk. The spindle motor carries and drives the disk to rotate, so that the optical pickup unit is able to read the data from different areas of the disk. The spindle motor includes a motor portion and a turntable. The motor portion drives the turntable to rotate. The turntable is used for carrying a disk. The turntable includes a body and several slots. The slots are spread over the disk uniformly and symmetrically. Each of the slots is equipped with several anti-vibrating bodies. When the turntable rotates at high speed, the anti-vibrating bodies collide with one another to reduce the energy of tilting to prevent the turntable from tilting.
    Type: Application
    Filed: June 26, 2006
    Publication date: January 4, 2007
    Applicant: BENQ CORPORATION
    Inventors: Qing-Li Chai, Ji-Wei Wang
  • Publication number: 20060262206
    Abstract: The present invention provides a noise reduction method for use in reducing noise of a digital image, the method comprising steps of: defining a target window on a coordinate plane defined by the first chrominance and the second chrominance as the horizontal axis and the vertical axis; determining a noise threshold value according to whether an input pixel having a first chrominance value and a second chrominance value is located inside the window; determining whether the input pixel is a noise point according to the noise threshold value and luminance values of neighboring pixels of the input pixel; and adjusting the luminance value of the input pixel if the input pixel is determined a noise point. Using the noise reduction method of the present invention, not only noise of a digital image can be identified, but also the degradation caused by the noise can be reduced and thus the overall picture quality can be improved.
    Type: Application
    Filed: May 15, 2006
    Publication date: November 23, 2006
    Inventors: Wei-Kuo Lee, Yun-Hung Shen, Ji-Wei Wan
  • Patent number: 7005377
    Abstract: A bimetal layer manufacturing method includes the procedure of: forming a first dielectric layer on the surface of a semiconductor substrate which has a first metal layer (conductive layer) of a selected pattern formed thereon; forming a SOG layer on the surface of the first dielectric layer; forming a second dielectric layer; forming required via holes on the foregoing layers until reaching the first metal layer; forming a linear layer from a dielectrics material through PECVD; removing unnecessary linear layer from selected locations through an anisotropic plasma etching process; finally forming a second metal layer on a selected surface of the linear layer where MIM capacitors to be formed, and forming connection plugs in the via openings without generating via hole poison.
    Type: Grant
    Filed: May 24, 2004
    Date of Patent: February 28, 2006
    Assignee: BCD Semiconductor Manufacturing Ltd.
    Inventors: Hiu Fung Ip, Ellick Ma, Yan Ling Yu, Ren Chong, Ji-Wei Sun
  • Publication number: 20050289565
    Abstract: An optical/mechanical applied to a disc drive includes a spindle motor, a base plate, a principal guiding bar, and an optical pickup head. The spindle motor and the principal guiding bar are disposed on the base plate. The optical pickup head is movably disposed on the principal guiding bar and shifts along the axial direction of the principal guiding bar.
    Type: Application
    Filed: June 27, 2005
    Publication date: December 29, 2005
    Inventors: Shan-Yen Yang, Jian-Bo Gu, Ji-Wei Wang
  • Publication number: 20050260852
    Abstract: A bimetal layer manufacturing method includes the procedure of: forming a first dielectric layer on the surface of a semiconductor substrate which has a first metal layer (conductive layer) of a selected pattern formed thereon; forming a SOG layer on the surface of the first dielectric layer; forming a second dielectric layer; forming required via holes on the foregoing layers until reaching the first metal layer; forming a linear layer from a dielectrics material through PECVD; removing unnecessary linear layer from selected locations through an anisotropic plasma etching process; finally forming a second metal layer on a selected surface of the linear layer where MIM capacitors to be formed, and forming connection plugs in the via openings without generating via hole poison.
    Type: Application
    Filed: May 24, 2004
    Publication date: November 24, 2005
    Inventors: Hiu Ip, Ellick Ma, Yan Yu, Chong Ren, Ji-Wei Sun
  • Publication number: 20030200320
    Abstract: This invention provides a method and a computer program for supporting a roaming user in the Lotus Notes environment. This invention also provides a method and a computer program for storing three personal user files on all applicable servers within the user's computer network organization. The objectives of this invention are achieved by a method for supporting roaming users in the Lotus Notes environment. The method includes storing a global informative file, which contains the locations of all file servers, which store valid users' personal files.
    Type: Application
    Filed: April 16, 2003
    Publication date: October 23, 2003
    Applicant: Taiwan Semiconductor Manufacturing Co.
    Inventors: Ji-Wei Lin, Feng-Kuang Sung
  • Publication number: 20030079147
    Abstract: The present invention discloses a single sign-on system for remotely operating an application program via a network. With the present invention, a user may operate a client computer, which connects and signs on to a single sign-on server to retrieve sign-on information. Then, the client computer connects and signs on to an application program server with the sign-on information, and updates the sign-on information saved in the single sign-on server by sending the sign-on information back to the single sign-on server.
    Type: Application
    Filed: February 5, 2002
    Publication date: April 24, 2003
    Inventors: Ching-Chuan Hsieh, Ji-Wei Lin, Chia San Lee, Yueh-Ching Lee
  • Patent number: 6436765
    Abstract: A method of fabricating a trenched flash memory cell is provided. A plurality of shallow trench isolation structures are formed to enclose at least an active area in a silicon substrate. A doped region is formed in the silicon substrate, followed by the deposition of an isolation layer on the silicon substrate. A first photo and etching process (PEP) is performed to form two trenches within the active area. A tunnel oxide layer, a floating gate, and ONO dielectric layer are formed in the trenches, respectively. A doped polysilicon layer is then formed on the silicon substrate to fill the trenches, followed by the removal of a portion of the doped polysilicon layer to form two controlling gates in the active area. Next, a self-alignment common source is formed between the two controlling gates and a plurality of spacers are formed on either side of each controlling gate. Finally, a silicide layer is formed on the surfaces of the controlling gates and the common source.
    Type: Grant
    Filed: February 9, 2001
    Date of Patent: August 20, 2002
    Assignee: United Microelectronics Corp.
    Inventors: Ji-Wei Liou, Chih-Jen Huang, Pao-Chuan Lin
  • Publication number: 20020110984
    Abstract: A method of fabricating a trenched flash memory cell is provided. A plurality of shallow trench isolation structures are formed to enclose at least an active area in a silicon substrate. A doped region is formed in the silicon substrate, followed by the deposition of an isolation layer on the silicon substrate. A first photo and etching process (PEP) is performed to form two trenches within the active area. A tunnel oxide layer, a floating gate, and an ONO dielectric layer are formed in the trenches, respectively. A doped polysilicon layer is then formed on the silicon substrate to fill the trenches, followed by the removal of a portion of the doped polysilicon layer to form two controlling gates in the active area. Next, a self-alignment common source is formed between the two controlling gates and a plurality of spacers are formed on either side of each controlling gate. Finally, a silicide layer is formed on the surfaces of the controlling gates and the common source.
    Type: Application
    Filed: February 9, 2001
    Publication date: August 15, 2002
    Inventors: Ji-Wei Liou, Chih-Jen Huang, Pao-Chuan Lin